MT53E512M16D1FW-046 AIT:D TR Micron Technology Inc.
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 512MX16 FBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
Description: LPDDR4 8G 512MX16 FBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
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Технічний опис MT53E512M16D1FW-046 AIT:D TR Micron Technology Inc.
Description: LPDDR4 8G 512MX16 FBGA, Packaging: Tape & Reel (TR), Package / Case: 200-TFBGA, Mounting Type: Surface Mount, Memory Size: 8Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 95°C (TC), Voltage - Supply: 1.06V ~ 1.17V, Technology: SDRAM - Mobile LPDDR4X, Clock Frequency: 2.133 GHz, Memory Format: DRAM, Supplier Device Package: 200-TFBGA (10x14.5), Part Status: Active, Write Cycle Time - Word, Page: 18ns, Memory Interface: Parallel, Access Time: 3.5 ns, Memory Organization: 512M x 16.
Інші пропозиції MT53E512M16D1FW-046 AIT:D TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MT53E512M16D1FW-046 AIT:D TR | Виробник : Micron | DRAM LPDDR4 8G 512MX16 FB GA |
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