Продукція > MICRO COMMERCIAL CO > Всі товари виробника MICRO COMMERCIAL CO (15141) > Сторінка 103 з 253
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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2N4400-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 1V Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
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2N4402-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
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2N5550-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
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2N6036-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 40 W |
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2N6045-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -60°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A Current - Collector Cutoff (Max): 20µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V Supplier Device Package: TO-220AB Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 75 W |
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2N6107-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V Frequency - Transition: 10MHz Supplier Device Package: TO-220AB Part Status: Obsolete Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 70 V Power - Max: 40 W |
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2N6519-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 30mA, 10V Frequency - Transition: 40MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 625 mW |
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2N6520-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V Frequency - Transition: 40MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 625 mW |
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2N7000-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
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2SA1012-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V Frequency - Transition: 60MHz Supplier Device Package: TO-220AB Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 25 W |
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2SA1020L-O-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
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2SA1020L-Y-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
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2SA1020-O-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
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2SA1020-Y-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
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2SA1036-P-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 3V Frequency - Transition: 200MHz Supplier Device Package: SOT-23 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 200 mW |
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2SA1083-D-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 12V Frequency - Transition: 90MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 400 mW |
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2SA1083-E-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 12V Frequency - Transition: 90MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 400 mW |
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2SA1162-O-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SOT-23 Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
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2SA1201-O-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: SOT-89 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 500 mW |
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2SA1298-O-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
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2SA1464-P-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 150mA, 2V Frequency - Transition: 400MHz Supplier Device Package: SOT-23 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 200 mW |
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2SA1464-Q-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 400MHz Supplier Device Package: SOT-23 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 200 mW |
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2SA1464-R-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 150mA, 2V Frequency - Transition: 400MHz Supplier Device Package: SOT-23 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 200 mW |
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2SA1576A-S-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SOT-323 Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
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2SA1577-P-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 3V Frequency - Transition: 200MHz Supplier Device Package: SOT-323 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 200 mW |
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2SA1577-Q-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V Frequency - Transition: 200MHz Supplier Device Package: SOT-323 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 200 mW |
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2SA1797-P-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V Frequency - Transition: 200MHz Supplier Device Package: SOT-89 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
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2SA733-K-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW |
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2SA733-Q-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW |
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2SA733-R-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW |
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2SA933AS-Q-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92S Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
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2SA933AS-R-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92S Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
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2SA965-Y-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 900 mW |
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2SB1073-Q-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2A, 2V Frequency - Transition: 120MHz Supplier Device Package: SOT-89 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1 W |
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2SB1073-R-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2A, 2V Frequency - Transition: 120MHz Supplier Device Package: SOT-89 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1 W |
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2SC1740S-Q-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92S Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW |
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2SC1740S-R-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92S Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW |
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2SC1740S-S-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92S Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW |
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2SC1741S-Q-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 250MHz Supplier Device Package: TO-92S Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 200 mW |
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2SC1815-O-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 400 mW |
товар відсутній |
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2SC1959-GR-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Frequency - Transition: 300MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 500 mW |
товар відсутній |
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2SC1959-O-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Frequency - Transition: 300MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 500 mW |
товар відсутній |
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2SC1959-Y-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Frequency - Transition: 300MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 500 mW |
товар відсутній |
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2SC2001-K-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 600 mW |
товар відсутній |
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2SC2001-L-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 600 mW |
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2SC2001-M-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 600 mW |
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2SC2120-O-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 20mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 600 mW |
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2SC2120-Y-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 20mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 600 mW |
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2SC2383-O-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V Frequency - Transition: 20MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 900 mW |
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2SC2383-R-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V Frequency - Transition: 20MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 900 mW |
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2SC2482-O-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA Current - Collector Cutoff (Max): 5µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V Frequency - Transition: 50MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 900 mW |
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2SC2482-Y-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA Current - Collector Cutoff (Max): 5µA DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 10V Frequency - Transition: 50MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 900 mW |
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2SC2655L-O-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
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2SC2655L-Y-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
товар відсутній |
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2SC2655-O-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
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2SC2655-Y-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92MOD Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 900 mW |
товар відсутній |
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2SC3279-L-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 10 V Power - Max: 750 mW |
товар відсутній |
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2SC3279-M-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 10 V Power - Max: 750 mW |
товар відсутній |
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2SC3279-N-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 10 V Power - Max: 750 mW |
товар відсутній |
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2SC3279-P-AP | Micro Commercial Co |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 500mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 10 V Power - Max: 750 mW |
товар відсутній |
2N4400-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 40V 0.6A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 1V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS NPN 40V 0.6A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 1V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товар відсутній
2N4402-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 40V 0.6A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.6A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товар відсутній
2N5550-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 140V 0.6A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
Description: TRANS NPN 140V 0.6A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
товар відсутній
2N6036-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP DARL 80V 4A TO126
Packaging: Tape & Box (TB)
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Description: TRANS PNP DARL 80V 4A TO126
Packaging: Tape & Box (TB)
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
товар відсутній
2N6045-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN DARL 100V 8A TO220AB
Packaging: Tape & Box (TB)
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -60°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Supplier Device Package: TO-220AB
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 75 W
Description: TRANS NPN DARL 100V 8A TO220AB
Packaging: Tape & Box (TB)
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -60°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Supplier Device Package: TO-220AB
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 75 W
товар відсутній
2N6107-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 70V 7A TO220AB
Packaging: Tape & Box (TB)
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220AB
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 40 W
Description: TRANS PNP 70V 7A TO220AB
Packaging: Tape & Box (TB)
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220AB
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 40 W
товар відсутній
2N6519-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 300V 0.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 30mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
Description: TRANS PNP 300V 0.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 30mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
товар відсутній
2N6520-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 350V 0.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
Description: TRANS PNP 350V 0.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
товар відсутній
2N7000-AP |
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Виробник: Micro Commercial Co
Description: MOSFET N-CH 60V 200MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Description: MOSFET N-CH 60V 200MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
товар відсутній
2SA1012-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 50V 5A TO220AB
Packaging: Tape & Box (TB)
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220AB
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 25 W
Description: TRANS PNP 50V 5A TO220AB
Packaging: Tape & Box (TB)
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220AB
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 25 W
товар відсутній
2SA1020L-O-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 50V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020L-Y-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 50V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-O-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1036-P-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 32V 0.5A SOT23
Packaging: Tape & Box (TB)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
Description: TRANS PNP 32V 0.5A SOT23
Packaging: Tape & Box (TB)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
товар відсутній
2SA1083-D-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 60V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 12V
Frequency - Transition: 90MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
Description: TRANS PNP 60V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 12V
Frequency - Transition: 90MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
товар відсутній
2SA1083-E-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 60V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 12V
Frequency - Transition: 90MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
Description: TRANS PNP 60V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 12V
Frequency - Transition: 90MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
товар відсутній
2SA1162-O-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 50V 0.15A SOT23
Packaging: Tape & Box (TB)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A SOT23
Packaging: Tape & Box (TB)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
товар відсутній
2SA1201-O-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 120V 0.8A SOT89
Packaging: Tape & Box (TB)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Description: TRANS PNP 120V 0.8A SOT89
Packaging: Tape & Box (TB)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
товар відсутній
2SA1298-O-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 30V 0.8A SOT23
Packaging: Tape & Box (TB)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS PNP 30V 0.8A SOT23
Packaging: Tape & Box (TB)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
товар відсутній
2SA1464-P-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 40V 0.5A SOT23
Packaging: Tape & Box (TB)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 150mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Description: TRANS PNP 40V 0.5A SOT23
Packaging: Tape & Box (TB)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 150mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
товар відсутній
2SA1464-Q-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 40V 0.5A SOT23
Packaging: Tape & Box (TB)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Description: TRANS PNP 40V 0.5A SOT23
Packaging: Tape & Box (TB)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
товар відсутній
2SA1464-R-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 40V 0.5A SOT23
Packaging: Tape & Box (TB)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 150mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Description: TRANS PNP 40V 0.5A SOT23
Packaging: Tape & Box (TB)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 150mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
товар відсутній
2SA1576A-S-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 50V 0.15A SOT323
Packaging: Tape & Box (TB)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.15A SOT323
Packaging: Tape & Box (TB)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
товар відсутній
2SA1577-P-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 32V 0.5A SOT323
Packaging: Tape & Box (TB)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-323
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
Description: TRANS PNP 32V 0.5A SOT323
Packaging: Tape & Box (TB)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-323
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
товар відсутній
2SA1577-Q-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 32V 0.5A SOT323
Packaging: Tape & Box (TB)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-323
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
Description: TRANS PNP 32V 0.5A SOT323
Packaging: Tape & Box (TB)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-323
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
товар відсутній
2SA1797-P-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 50V 2A SOT89
Packaging: Tape & Box (TB)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS PNP 50V 2A SOT89
Packaging: Tape & Box (TB)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-89
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товар відсутній
2SA733-K-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 50V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Description: TRANS PNP 50V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товар відсутній
2SA733-Q-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 50V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Description: TRANS PNP 50V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товар відсутній
2SA733-R-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 50V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Description: TRANS PNP 50V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товар відсутній
2SA933AS-Q-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
товар відсутній
2SA933AS-R-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
товар відсутній
2SA965-Y-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 120V 0.8A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 900 mW
Description: TRANS PNP 120V 0.8A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 900 mW
товар відсутній
2SB1073-Q-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 20V 4A SOT89
Packaging: Tape & Box (TB)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Description: TRANS PNP 20V 4A SOT89
Packaging: Tape & Box (TB)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
товар відсутній
2SB1073-R-AP |
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Виробник: Micro Commercial Co
Description: TRANS PNP 20V 4A SOT89
Packaging: Tape & Box (TB)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Description: TRANS PNP 20V 4A SOT89
Packaging: Tape & Box (TB)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
товар відсутній
2SC1740S-Q-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Description: TRANS NPN 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
товар відсутній
2SC1740S-R-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Description: TRANS NPN 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
товар відсутній
2SC1740S-S-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Description: TRANS NPN 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
товар відсутній
2SC1741S-Q-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 32V 0.5A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
Description: TRANS NPN 32V 0.5A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
товар відсутній
2SC1815-O-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 50V 0.15A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
Description: TRANS NPN 50V 0.15A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
товар відсутній
2SC1959-GR-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 30V 0.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Description: TRANS NPN 30V 0.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
товар відсутній
2SC1959-O-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 30V 0.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Description: TRANS NPN 30V 0.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
товар відсутній
2SC1959-Y-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 30V 0.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Description: TRANS NPN 30V 0.5A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
товар відсутній
2SC2001-K-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 25V 0.7A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 600 mW
Description: TRANS NPN 25V 0.7A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 600 mW
товар відсутній
2SC2001-L-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 25V 0.7A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 600 mW
Description: TRANS NPN 25V 0.7A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 600 mW
товар відсутній
2SC2001-M-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 25V 0.7A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 600 mW
Description: TRANS NPN 25V 0.7A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 600 mW
товар відсутній
2SC2120-O-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 30V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 600 mW
Description: TRANS NPN 30V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 600 mW
товар відсутній
2SC2120-Y-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 30V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 600 mW
Description: TRANS NPN 30V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 600 mW
товар відсутній
2SC2383-O-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 160V 1A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
Description: TRANS NPN 160V 1A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
товар відсутній
2SC2383-R-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 160V 1A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
Description: TRANS NPN 160V 1A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
товар відсутній
2SC2482-O-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 300V 0.1A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
Current - Collector Cutoff (Max): 5µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 900 mW
Description: TRANS NPN 300V 0.1A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
Current - Collector Cutoff (Max): 5µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 900 mW
товар відсутній
2SC2482-Y-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 300V 0.1A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
Current - Collector Cutoff (Max): 5µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 900 mW
Description: TRANS NPN 300V 0.1A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
Current - Collector Cutoff (Max): 5µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 900 mW
товар відсутній
2SC2655L-O-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 50V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS NPN 50V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SC2655L-Y-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 50V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS NPN 50V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SC2655-O-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 50V 2A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS NPN 50V 2A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SC2655-Y-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 50V 2A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Description: TRANS NPN 50V 2A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SC3279-L-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 10V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 10 V
Power - Max: 750 mW
Description: TRANS NPN 10V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 10 V
Power - Max: 750 mW
товар відсутній
2SC3279-M-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 10V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 10 V
Power - Max: 750 mW
Description: TRANS NPN 10V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 10 V
Power - Max: 750 mW
товар відсутній
2SC3279-N-AP |
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Виробник: Micro Commercial Co
Description: TRANS NPN 10V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 10 V
Power - Max: 750 mW
Description: TRANS NPN 10V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 10 V
Power - Max: 750 mW
товар відсутній
2SC3279-P-AP |
![]() |
Виробник: Micro Commercial Co
Description: TRANS NPN 10V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 10 V
Power - Max: 750 mW
Description: TRANS NPN 10V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 500mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 10 V
Power - Max: 750 mW
товар відсутній