Продукція > MICRO COMMERCIAL CO > Всі товари виробника MICRO COMMERCIAL CO (15141) > Сторінка 102 з 253
| Фото | Назва | Виробник | Інформація |
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| FS2D-TP | Micro Commercial Co |
 Description: DIODE 2A 200V HSMA DO-214AC |
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FS2M-TP | Micro Commercial Co |
Description: DIODE GEN PURP 1KV 2A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (HSMA) Operating Temperature - Junction: -50°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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SMAJ4733A-TP | Micro Commercial Co |
Description: DIODE ZENER 5.1V 1W DO214AC Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
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SMAJ4756A-TP | Micro Commercial Co |
Description: DIODE ZENER 1W SMA DO-214AC |
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MMSZ5244B-TP | Micro Commercial Co |
Description: DIODE ZENER 14V 500MW SOD123 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TA) Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MMSZ5247B-TP | Micro Commercial Co |
Description: DIODE ZENER 500MW SOD123 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TA) Supplier Device Package: SOD-123 Power - Max: 500 mW |
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MMSZ5263B-TP | Micro Commercial Co |
Description: DIODE ZENER 500MW SOD-123 |
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BZT52C2V0-TP | Micro Commercial Co |
Description: DIODE ZENER 500MW SOD-123 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 2 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 90 µA @ 1 V |
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GS1AE-TP | Micro Commercial Co |
Description: DIODE GEN PURP 50V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
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GS1BE-TP | Micro Commercial Co |
Description: DIODE GEN PURP 100V 1A DO214AC |
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GS1JE-TP | Micro Commercial Co |
Description: DIODE GEN PURP 600V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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GS1KE-TP | Micro Commercial Co |
Description: DIODE GEN PURP 800V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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BC337-25-AP | Micro Commercial Co |
Description: TRANS NPN 45V 0.8A TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 210MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
на замовлення 1074 шт: термін постачання 21-31 дні (днів) |
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SI2300-TP | Micro Commercial Co |
Description: MOSFET N-CH 20V 4.5A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj) Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1W Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 10 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SI2324A-TP | Micro Commercial Co |
Description: MOSFET N-CH 100V 2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tj) Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V Power Dissipation (Max): 1.2W Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V |
на замовлення 171000 шт: термін постачання 21-31 дні (днів) |
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SI3401A-TP | Micro Commercial Co |
Description: MOSFET P-CH 30V 4.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 10V Power Dissipation (Max): 400mW Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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MCAC80N06Y-TP | Micro Commercial Co |
Description: MOSFET N-CH 60V 80A DFN5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 30 V |
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MCU80N06-TP | Micro Commercial Co |
Description: MOSFET N-CH 60V 80A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V Power Dissipation (Max): 85W Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V |
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MCU04N60-TP | Micro Commercial Co |
Description: MOSFET N-CH 600V 4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V |
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MCU20N06A-TP | Micro Commercial Co |
Description: MOSFET N-CH 60V 20A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tj) Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 30 V |
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MCU60N04-TP | Micro Commercial Co |
Description: MOSFET N-CH 40V 60A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V |
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2N7002KW-TP | Micro Commercial Co |
Description: MOSFET N-CH 60V 340MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 200mW Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
на замовлення 57000 шт: термін постачання 21-31 дні (днів) |
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SI2300-TP | Micro Commercial Co |
Description: MOSFET N-CH 20V 4.5A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj) Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1W Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 10 V |
на замовлення 10782 шт: термін постачання 21-31 дні (днів) |
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SI2324A-TP | Micro Commercial Co |
Description: MOSFET N-CH 100V 2A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tj) Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V Power Dissipation (Max): 1.2W Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V |
на замовлення 171443 шт: термін постачання 21-31 дні (днів) |
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SI3401A-TP | Micro Commercial Co |
Description: MOSFET P-CH 30V 4.2A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 10V Power Dissipation (Max): 400mW Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V |
на замовлення 22245 шт: термін постачання 21-31 дні (днів) |
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MCAC80N06Y-TP | Micro Commercial Co |
Description: MOSFET N-CH 60V 80A DFN5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 30 V |
на замовлення 44 шт: термін постачання 21-31 дні (днів) |
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MCU80N06-TP | Micro Commercial Co |
Description: MOSFET N-CH 60V 80A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V Power Dissipation (Max): 85W Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V |
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MCU20N06A-TP | Micro Commercial Co |
Description: MOSFET N-CH 60V 20A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tj) Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 30 V |
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MCU60N04-TP | Micro Commercial Co |
Description: MOSFET N-CH 40V 60A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V |
на замовлення 76 шт: термін постачання 21-31 дні (днів) |
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2N7002KW-TP | Micro Commercial Co |
Description: MOSFET N-CH 60V 340MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 200mW Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
на замовлення 60307 шт: термін постачання 21-31 дні (днів) |
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KBP301G-BP | Micro Commercial Co |
Description: BRIDGE RECT 100V 3A GBP Packaging: Bulk Package / Case: 4-SIP, GBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C Technology: Standard Supplier Device Package: GBP Part Status: Active Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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| KBP02M-BP | Micro Commercial Co |
Description: BRIDGE RECT 200V 1.5A KBPR Packaging: Bulk Package / Case: 4-SIP, KBPR Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C Technology: Standard Supplier Device Package: KBPR Part Status: Obsolete Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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| KBP04M-BP | Micro Commercial Co |
Description: BRIDGE RECT 400V 1.5A KBPR |
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| KBP08M-BP | Micro Commercial Co |
Description: BRIDGE RECT 800V 1.5A KBPR Packaging: Bulk Package / Case: 4-SIP, KBPR Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C Technology: Standard Supplier Device Package: KBPR Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
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| KBP3005-BP | Micro Commercial Co |
Description: BRIDGE RECT 50V 3A KBPR Packaging: Bulk Package / Case: 4-SIP, KBPR Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 125°C Technology: Standard Supplier Device Package: KBPR Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
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| KBP301-BP | Micro Commercial Co |
Description: BRIDGE RECT 100V 3A KBPR Packaging: Bulk Package / Case: 4-SIP, KBPR Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 125°C Technology: Standard Supplier Device Package: KBPR Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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| KBP302-BP | Micro Commercial Co |
Description: BRIDGE RECT 200V 3A KBPR |
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| KBP304-BP | Micro Commercial Co |
Description: BRIDGE RECT 400V 3A KBPR |
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| KBP306-BP | Micro Commercial Co |
Description: BRIDGE RECT 600V 3A KBPR Packaging: Bulk Package / Case: 4-SIP, KBPR Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 125°C Technology: Standard Supplier Device Package: KBPR Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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| KBP308-BP | Micro Commercial Co |
Description: BRIDGE RECT 800V 3A KBPR Packaging: Bulk Package / Case: 4-SIP, KBPR Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 125°C Technology: Standard Supplier Device Package: KBPR Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
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| KBP310-BP | Micro Commercial Co |
Description: BRIDGE RECT 1000V 3A KBPR Packaging: Bulk Package / Case: 4-SIP, KBPR Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 125°C Technology: Standard Supplier Device Package: KBPR Part Status: Obsolete Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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| GBJA606-BP | Micro Commercial Co |
Description: DIODE BRIDGE 6A JA Packaging: Bulk Package / Case: 4-SIP, JA Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C Technology: Standard Supplier Device Package: JA Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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| BAS40L2-TP | Micro Commercial Co |
Description: DIODE SCHOT 40V 200MA DFN1006-2L |
товар відсутній |
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| BAS70L2-TP | Micro Commercial Co |
Description: DIODE SCHOTTKY DFN1006-2L |
товар відсутній |
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BAT54L2-TP | Micro Commercial Co |
Description: DIODE SCHOT 30V 200MA DFN1006-2L Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DFN1006-2L Operating Temperature - Junction: 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BCX70J-TP | Micro Commercial Co |
Description: TRANS NPN 45V 0.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
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ESDLC5V0AE2-TP | Micro Commercial Co |
Description: TVS DIODE 5VWM 15VC 0201-A Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 15pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 0201-A Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 120W Power Line Protection: No |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| ESDLC5V0L2B-TP | Micro Commercial Co | Description: TVS DIODE 5V DFN1006-2 |
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ESDLC5V0LB-TP | Micro Commercial Co |
Description: TVS DIODE 5VWM 15VC 2DFN1006 |
товар відсутній |
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MBR20100ULPS-TP | Micro Commercial Co |
Description: DIODE SCHOTTKY 100V 20A TO277-3 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 20A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A Current - Reverse Leakage @ Vr: 80 µA @ 100 V |
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| GBJA1506-BP | Micro Commercial Co |
Description: DIODE BRIDGE 15A JA Packaging: Bulk Package / Case: 4-SIP, JA Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C Technology: Standard Supplier Device Package: JA Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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| GBJA1508-BP | Micro Commercial Co |
Description: DIODE BRIDGE 15A JA |
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| GBJA2510-BP | Micro Commercial Co |
Description: DIODE BRIDGE 25A JA Packaging: Bulk Package / Case: 4-SIP, JA Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C Technology: Standard Supplier Device Package: JA Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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GBL406-BPC01 | Micro Commercial Co |
Description: DIODE GPP SGL PHASE 4A GBL Packaging: Bulk Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C Technology: Standard Supplier Device Package: GBL Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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GBL410-BPC01 | Micro Commercial Co |
Description: DIODE GPP SGL PHASE 4A GBL Packaging: Bulk Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C Technology: Standard Supplier Device Package: GBL Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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| GBJA2008-BP | Micro Commercial Co |
Description: DIODE BRIDGE 20A JA Packaging: Tube Package / Case: 4-SIP, JA Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C Technology: Standard Supplier Device Package: JA Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
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BAS116L2B-TP | Micro Commercial Co |
Description: DIODE GP 85V 215MA DFN1006-2L Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: DFN1006-2L Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 85 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V |
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| BZT52B2V4JS-TP | Micro Commercial Co |
Description: DIODE ZENER 2.4V 200MW SOD323 Packaging: Tape & Reel (TR) Tolerance: ±2.08% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 2.4 V Impedance (Max) (Zzt): 85 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 µA @ 1 V |
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BZT52B62JS-TP | Micro Commercial Co |
Description: DIODE ZENER 62V 200MW SOD323 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 150 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 46 V |
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2N4123-AP | Micro Commercial Co |
Description: TRANS NPN 30V 0.2A TO92 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
товар відсутній |
| FS2M-TP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 1KV 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
| SMAJ4733A-TP |
|
Виробник: Micro Commercial Co
Description: DIODE ZENER 5.1V 1W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE ZENER 5.1V 1W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
товар відсутній
| MMSZ5244B-TP |
|
Виробник: Micro Commercial Co
Description: DIODE ZENER 14V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Description: DIODE ZENER 14V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.17 грн |
| MMSZ5247B-TP |
|
Виробник: Micro Commercial Co
Description: DIODE ZENER 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Supplier Device Package: SOD-123
Power - Max: 500 mW
Description: DIODE ZENER 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Supplier Device Package: SOD-123
Power - Max: 500 mW
товар відсутній
| BZT52C2V0-TP |
|
Виробник: Micro Commercial Co
Description: DIODE ZENER 500MW SOD-123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 90 µA @ 1 V
Description: DIODE ZENER 500MW SOD-123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 90 µA @ 1 V
товар відсутній
| GS1AE-TP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
| GS1JE-TP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
| GS1KE-TP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
| BC337-25-AP |
|
Виробник: Micro Commercial Co
Description: TRANS NPN 45V 0.8A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 210MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: TRANS NPN 45V 0.8A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 210MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
на замовлення 1074 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.3 грн |
| 13+ | 24.23 грн |
| 100+ | 15.49 грн |
| 500+ | 10.97 грн |
| 1000+ | 9.82 грн |
| SI2300-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET N-CH 20V 4.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1W
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 10 V
Description: MOSFET N-CH 20V 4.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1W
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.33 грн |
| 6000+ | 6.9 грн |
| SI2324A-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET N-CH 100V 2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
Description: MOSFET N-CH 100V 2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
на замовлення 171000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.07 грн |
| 6000+ | 5.71 грн |
| 9000+ | 5.06 грн |
| 30000+ | 4.69 грн |
| 75000+ | 3.98 грн |
| 150000+ | 3.83 грн |
| SI3401A-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET P-CH 30V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 10V
Power Dissipation (Max): 400mW
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V
Description: MOSFET P-CH 30V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 10V
Power Dissipation (Max): 400mW
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.4 грн |
| 6000+ | 4.98 грн |
| 9000+ | 4.3 грн |
| MCAC80N06Y-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET N-CH 60V 80A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 30 V
Description: MOSFET N-CH 60V 80A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 30 V
товар відсутній
| MCU80N06-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET N-CH 60V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 85W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Description: MOSFET N-CH 60V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 85W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
товар відсутній
| MCU04N60-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
товар відсутній
| MCU20N06A-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET N-CH 60V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tj)
Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 30 V
Description: MOSFET N-CH 60V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tj)
Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 30 V
товар відсутній
| MCU60N04-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET N-CH 40V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Description: MOSFET N-CH 40V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
товар відсутній
| 2N7002KW-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET N-CH 60V 340MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET N-CH 60V 340MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.12 грн |
| 6000+ | 2.79 грн |
| 9000+ | 2.31 грн |
| 30000+ | 2.13 грн |
| SI2300-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET N-CH 20V 4.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1W
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 10 V
Description: MOSFET N-CH 20V 4.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1W
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 10 V
на замовлення 10782 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.69 грн |
| 13+ | 22.7 грн |
| 100+ | 11.44 грн |
| 500+ | 9.52 грн |
| 1000+ | 7.41 грн |
| SI2324A-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET N-CH 100V 2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
Description: MOSFET N-CH 100V 2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
на замовлення 171443 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.37 грн |
| 16+ | 18.82 грн |
| 100+ | 9.47 грн |
| 500+ | 7.88 грн |
| 1000+ | 6.13 грн |
| SI3401A-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET P-CH 30V 4.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 10V
Power Dissipation (Max): 400mW
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V
Description: MOSFET P-CH 30V 4.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 10V
Power Dissipation (Max): 400mW
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V
на замовлення 22245 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.41 грн |
| 15+ | 20.21 грн |
| 100+ | 10.22 грн |
| 500+ | 7.82 грн |
| 1000+ | 5.81 грн |
| MCAC80N06Y-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET N-CH 60V 80A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 30 V
Description: MOSFET N-CH 60V 80A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 30 V
на замовлення 44 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.6 грн |
| 10+ | 78.19 грн |
| MCU80N06-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET N-CH 60V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 85W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Description: MOSFET N-CH 60V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 85W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
товар відсутній
| MCU20N06A-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET N-CH 60V 20A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tj)
Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 30 V
Description: MOSFET N-CH 60V 20A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tj)
Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 30 V
товар відсутній
| MCU60N04-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET N-CH 40V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Description: MOSFET N-CH 40V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
на замовлення 76 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.9 грн |
| 10+ | 40.34 грн |
| 2N7002KW-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET N-CH 60V 340MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET N-CH 60V 340MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
на замовлення 60307 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.01 грн |
| 24+ | 12.23 грн |
| 100+ | 5.99 грн |
| 500+ | 4.69 грн |
| 1000+ | 3.26 грн |
| KBP301G-BP |
|
Виробник: Micro Commercial Co
Description: BRIDGE RECT 100V 3A GBP
Packaging: Bulk
Package / Case: 4-SIP, GBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBP
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 100V 3A GBP
Packaging: Bulk
Package / Case: 4-SIP, GBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBP
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
| KBP02M-BP |
|
Виробник: Micro Commercial Co
Description: BRIDGE RECT 200V 1.5A KBPR
Packaging: Bulk
Package / Case: 4-SIP, KBPR
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: KBPR
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 200V 1.5A KBPR
Packaging: Bulk
Package / Case: 4-SIP, KBPR
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: KBPR
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
| KBP08M-BP |
|
Виробник: Micro Commercial Co
Description: BRIDGE RECT 800V 1.5A KBPR
Packaging: Bulk
Package / Case: 4-SIP, KBPR
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: KBPR
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 800V 1.5A KBPR
Packaging: Bulk
Package / Case: 4-SIP, KBPR
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: KBPR
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
| KBP3005-BP |
|
Виробник: Micro Commercial Co
Description: BRIDGE RECT 50V 3A KBPR
Packaging: Bulk
Package / Case: 4-SIP, KBPR
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C
Technology: Standard
Supplier Device Package: KBPR
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 50V 3A KBPR
Packaging: Bulk
Package / Case: 4-SIP, KBPR
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C
Technology: Standard
Supplier Device Package: KBPR
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
| KBP301-BP |
|
Виробник: Micro Commercial Co
Description: BRIDGE RECT 100V 3A KBPR
Packaging: Bulk
Package / Case: 4-SIP, KBPR
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C
Technology: Standard
Supplier Device Package: KBPR
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 100V 3A KBPR
Packaging: Bulk
Package / Case: 4-SIP, KBPR
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C
Technology: Standard
Supplier Device Package: KBPR
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
| KBP306-BP |
|
Виробник: Micro Commercial Co
Description: BRIDGE RECT 600V 3A KBPR
Packaging: Bulk
Package / Case: 4-SIP, KBPR
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C
Technology: Standard
Supplier Device Package: KBPR
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 600V 3A KBPR
Packaging: Bulk
Package / Case: 4-SIP, KBPR
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C
Technology: Standard
Supplier Device Package: KBPR
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
| KBP308-BP |
|
Виробник: Micro Commercial Co
Description: BRIDGE RECT 800V 3A KBPR
Packaging: Bulk
Package / Case: 4-SIP, KBPR
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C
Technology: Standard
Supplier Device Package: KBPR
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 800V 3A KBPR
Packaging: Bulk
Package / Case: 4-SIP, KBPR
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C
Technology: Standard
Supplier Device Package: KBPR
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
| KBP310-BP |
|
Виробник: Micro Commercial Co
Description: BRIDGE RECT 1000V 3A KBPR
Packaging: Bulk
Package / Case: 4-SIP, KBPR
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C
Technology: Standard
Supplier Device Package: KBPR
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1000V 3A KBPR
Packaging: Bulk
Package / Case: 4-SIP, KBPR
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 125°C
Technology: Standard
Supplier Device Package: KBPR
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
| GBJA606-BP |
|
Виробник: Micro Commercial Co
Description: DIODE BRIDGE 6A JA
Packaging: Bulk
Package / Case: 4-SIP, JA
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: JA
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE BRIDGE 6A JA
Packaging: Bulk
Package / Case: 4-SIP, JA
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: JA
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
| BAS40L2-TP |
|
Виробник: Micro Commercial Co
Description: DIODE SCHOT 40V 200MA DFN1006-2L
Description: DIODE SCHOT 40V 200MA DFN1006-2L
товар відсутній
| BAT54L2-TP |
|
Виробник: Micro Commercial Co
Description: DIODE SCHOT 30V 200MA DFN1006-2L
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DFN1006-2L
Operating Temperature - Junction: 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE SCHOT 30V 200MA DFN1006-2L
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DFN1006-2L
Operating Temperature - Junction: 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 2.41 грн |
| BCX70J-TP |
|
Виробник: Micro Commercial Co
Description: TRANS NPN 45V 0.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS NPN 45V 0.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
товар відсутній
| ESDLC5V0AE2-TP |
|
Виробник: Micro Commercial Co
Description: TVS DIODE 5VWM 15VC 0201-A
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 0201-A
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 120W
Power Line Protection: No
Description: TVS DIODE 5VWM 15VC 0201-A
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 0201-A
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 120W
Power Line Protection: No
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 1.98 грн |
| ESDLC5V0LB-TP |
|
Виробник: Micro Commercial Co
Description: TVS DIODE 5VWM 15VC 2DFN1006
Description: TVS DIODE 5VWM 15VC 2DFN1006
товар відсутній
| MBR20100ULPS-TP |
|
Виробник: Micro Commercial Co
Description: DIODE SCHOTTKY 100V 20A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
Description: DIODE SCHOTTKY 100V 20A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Current - Reverse Leakage @ Vr: 80 µA @ 100 V
товар відсутній
| GBJA1506-BP |
|
Виробник: Micro Commercial Co
Description: DIODE BRIDGE 15A JA
Packaging: Bulk
Package / Case: 4-SIP, JA
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: JA
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE BRIDGE 15A JA
Packaging: Bulk
Package / Case: 4-SIP, JA
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: JA
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
| GBJA2510-BP |
|
Виробник: Micro Commercial Co
Description: DIODE BRIDGE 25A JA
Packaging: Bulk
Package / Case: 4-SIP, JA
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: JA
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE BRIDGE 25A JA
Packaging: Bulk
Package / Case: 4-SIP, JA
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: JA
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
| GBL406-BPC01 |
|
Виробник: Micro Commercial Co
Description: DIODE GPP SGL PHASE 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GPP SGL PHASE 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
| GBL410-BPC01 |
|
Виробник: Micro Commercial Co
Description: DIODE GPP SGL PHASE 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GPP SGL PHASE 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
| GBJA2008-BP |
|
Виробник: Micro Commercial Co
Description: DIODE BRIDGE 20A JA
Packaging: Tube
Package / Case: 4-SIP, JA
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: JA
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE BRIDGE 20A JA
Packaging: Tube
Package / Case: 4-SIP, JA
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: JA
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
| BAS116L2B-TP |
|
Виробник: Micro Commercial Co
Description: DIODE GP 85V 215MA DFN1006-2L
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: DFN1006-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Description: DIODE GP 85V 215MA DFN1006-2L
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: DFN1006-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
товар відсутній
| BZT52B2V4JS-TP |
Виробник: Micro Commercial Co
Description: DIODE ZENER 2.4V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2.08%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Description: DIODE ZENER 2.4V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2.08%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
товар відсутній
| BZT52B62JS-TP |
|
Виробник: Micro Commercial Co
Description: DIODE ZENER 62V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Description: DIODE ZENER 62V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
товар відсутній
| 2N4123-AP |
|
Виробник: Micro Commercial Co
Description: TRANS NPN 30V 0.2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS NPN 30V 0.2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
товар відсутній