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SLD30CA-TP SLD30CA-TP Micro Commercial Co SLD10(C)A-SLD60(C)A(R-6).pdf Description: Interface
Packaging: Bulk
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 6000W (6kW)
Power Line Protection: No
Grade: Automotive
товар відсутній
SMBJ85AQ-TP SMBJ85AQ-TP Micro Commercial Co SMBJ5.0AQ_SMBJ190CAQ(SMB).pdf Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1N4005 1N4005 Micro Commercial Co 1N4001~1N4007(DO-41).pdf Description: DIODE GEN PURP 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
1N4005 1N4005 Micro Commercial Co 1N4001~1N4007(DO-41).pdf Description: DIODE GEN PURP 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
SIL04P06YHE3-TP SIL04P06YHE3-TP Micro Commercial Co SIL04P06YHE3(SOT23-6L).pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V
Power Dissipation (Max): 1.7W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
SIL04P06YHE3-TP SIL04P06YHE3-TP Micro Commercial Co SIL04P06YHE3(SOT23-6L).pdf Description: IC
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V
Power Dissipation (Max): 1.7W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
SIL02N15A-TP SIL02N15A-TP Micro Commercial Co SIL02N15A(SOT23-6L).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 2A, 10V
Power Dissipation (Max): 1.8W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 100 V
товар відсутній
SIL02N15-TP SIL02N15-TP Micro Commercial Co SIL02N15(SOT23-6L).pdf Description: Interface
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
товар відсутній
SIL04P06Y-TP SIL04P06Y-TP Micro Commercial Co SIL04P06Y(SOT23-6L).pdf Description: MOSFET P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 15 V
товар відсутній
SIL04P06-TP SIL04P06-TP Micro Commercial Co Description: MOSFET P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.1A, 10V
Power Dissipation (Max): 2W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
товар відсутній
SMAJ4744AHE3-TP SMAJ4744AHE3-TP Micro Commercial Co SMAJ4740AHE3-SMAJ4764AHE3(SMA).pdf Description: Interface
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Qualification: AEC-Q101
товар відсутній
1N4001 1N4001 Micro Commercial Co 1N4001~1N4007(DO-41).pdf Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
1N4001 1N4001 Micro Commercial Co 1N4001~1N4007(DO-41).pdf Description: DIODE GEN PURP 50V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
1N4002 1N4002 Micro Commercial Co 1N4001~1N4007(DO-41).pdf Description: DIODE GEN PURP 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
1N4003 1N4003 Micro Commercial Co 1N4001~1N4007(DO-41).pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4003 1N4003 Micro Commercial Co 1N4001~1N4007(DO-41).pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4004 1N4004 Micro Commercial Co 1N4001~1N4007(DO-41).pdf Description: DIODE GEN PURP 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
1N4004 1N4004 Micro Commercial Co 1N4001~1N4007(DO-41).pdf Description: DIODE GEN PURP 400V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
ESD0552P6-TP Micro Commercial Co Description: ESD,5.0V,DFN1610-2
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 160A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1610-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 2400W (2.4kW)
Power Line Protection: No
товар відсутній
SMAZ24HE3-TP SMAZ24HE3-TP Micro Commercial Co SMAZ10HE3~SMAZ39HE3(SMA).pdf Description: Interface
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
Qualification: AEC-Q101
товар відсутній
MCTL270N04YHE3-TP MCTL270N04YHE3-TP Micro Commercial Co MCTL270N04YHE3(TOLL-8L).pdf Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 468W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8010 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
SLD30CA-TP SLD10(C)A-SLD60(C)A(R-6).pdf
SLD30CA-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 6000W (6kW)
Power Line Protection: No
Grade: Automotive
товар відсутній
SMBJ85AQ-TP SMBJ5.0AQ_SMBJ190CAQ(SMB).pdf
SMBJ85AQ-TP
Виробник: Micro Commercial Co
Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1N4005 1N4001~1N4007(DO-41).pdf
1N4005
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
1N4005 1N4001~1N4007(DO-41).pdf
1N4005
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
SIL04P06YHE3-TP SIL04P06YHE3(SOT23-6L).pdf
SIL04P06YHE3-TP
Виробник: Micro Commercial Co
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V
Power Dissipation (Max): 1.7W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
SIL04P06YHE3-TP SIL04P06YHE3(SOT23-6L).pdf
SIL04P06YHE3-TP
Виробник: Micro Commercial Co
Description: IC
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V
Power Dissipation (Max): 1.7W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
SIL02N15A-TP SIL02N15A(SOT23-6L).pdf
SIL02N15A-TP
Виробник: Micro Commercial Co
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 2A, 10V
Power Dissipation (Max): 1.8W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 100 V
товар відсутній
SIL02N15-TP SIL02N15(SOT23-6L).pdf
SIL02N15-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
товар відсутній
SIL04P06Y-TP SIL04P06Y(SOT23-6L).pdf
SIL04P06Y-TP
Виробник: Micro Commercial Co
Description: MOSFET P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 15 V
товар відсутній
SIL04P06-TP
SIL04P06-TP
Виробник: Micro Commercial Co
Description: MOSFET P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.1A, 10V
Power Dissipation (Max): 2W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
товар відсутній
SMAJ4744AHE3-TP SMAJ4740AHE3-SMAJ4764AHE3(SMA).pdf
SMAJ4744AHE3-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Qualification: AEC-Q101
товар відсутній
1N4001 1N4001~1N4007(DO-41).pdf
1N4001
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
1N4001 1N4001~1N4007(DO-41).pdf
1N4001
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 50V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
1N4002 1N4001~1N4007(DO-41).pdf
1N4002
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
1N4003 1N4001~1N4007(DO-41).pdf
1N4003
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4003 1N4001~1N4007(DO-41).pdf
1N4003
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4004 1N4001~1N4007(DO-41).pdf
1N4004
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
1N4004 1N4001~1N4007(DO-41).pdf
1N4004
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 400V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
ESD0552P6-TP
Виробник: Micro Commercial Co
Description: ESD,5.0V,DFN1610-2
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 160A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1610-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 2400W (2.4kW)
Power Line Protection: No
товар відсутній
SMAZ24HE3-TP SMAZ10HE3~SMAZ39HE3(SMA).pdf
SMAZ24HE3-TP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
Qualification: AEC-Q101
товар відсутній
MCTL270N04YHE3-TP MCTL270N04YHE3(TOLL-8L).pdf
MCTL270N04YHE3-TP
Виробник: Micro Commercial Co
Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 468W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8010 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
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