AUIRF7379QTR Infineon Technologies
на замовлення 4000 шт:
термін постачання 385-394 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 163.77 грн |
| 10+ | 146.02 грн |
| 100+ | 102.28 грн |
| 500+ | 83.24 грн |
| 1000+ | 69.62 грн |
| 2000+ | 64.4 грн |
| 4000+ | 62 грн |
Відгуки про товар
Написати відгук
Технічний опис AUIRF7379QTR Infineon Technologies
Description: AUIRF7379Q - 30V-55V DUAL N AND, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A, Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V, Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Інші пропозиції AUIRF7379QTR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
AUIRF7379QTR | Виробник : INFINEON TECHNOLOGIES |
 Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5.8/-4.3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 38/70mΩ Mounting: SMD Gate charge: 16.7nC Kind of channel: enhanced кількість в упаковці: 4000 шт |
товар відсутній |
|
 |
AUIRF7379QTR | Виробник : International Rectifier |
Description: AUIRF7379Q - 30V-55V DUAL N AND Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
товар відсутній |
|
 |
AUIRF7379QTR | Виробник : Infineon Technologies |
Description: AUIRF7379Q - 30V-55V DUAL N AND Packaging: Bulk Part Status: Active |
товар відсутній |
|
|
|
AUIRF7379QTR | Виробник : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5.8/-4.3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 38/70mΩ Mounting: SMD Gate charge: 16.7nC Kind of channel: enhanced |
товар відсутній |