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BAR6403WE6327 BAR6403WE6327 Infineon Technologies INFNS15695-1.pdf?t.download=true&u=5oefqw Description: RF PIN DIODE > ANTENNA SWITCH
товар відсутній
BAR63-04WH6327 BAR63-04WH6327 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BC848CWH6327 BC848CWH6327 Infineon Technologies INFNS16507-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 30V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
товар відсутній
BAR63-05WH6327 BAR63-05WH6327 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BFR193FH6327 BFR193FH6327 Infineon Technologies Infineon-BFR193F-DS-v01_01-en.pdf?fileId=db3a30431441fb5d0114acfcde76152c Description: HIGH LINEARITY TRANSISTOR
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-TSFP-3-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BAR 64-06WH6327 Infineon Technologies INFNS29271-1.pdf?t.download=true&u=5oefqw Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BC848BE6433 BC848BE6433 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
на замовлення 78655 шт:
термін постачання 21-31 дні (днів)
8689+2.08 грн
Мінімальне замовлення: 8689
BAR65-02VH6327 Infineon Technologies INFNS15696-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SC79-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BFS17WE6327 BFS17WE6327 Infineon Technologies INFNS10687-1.pdf?t.download=true&u=5oefqw Description: RF BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Supplier Device Package: SOT-323
Part Status: Active
товар відсутній
BAR63-03WE6433 BAR63-03WE6433 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOD323-3D
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BAR6304WH6327 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BAR6405E6327 BAR6405E6327 Infineon Technologies INFN-S-A0002785839-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE, 150V V(BR)
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BC850CWE6327 BC850CWE6327 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
товар відсутній
BC850BE6327 BC850BE6327 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 35665 шт:
термін постачання 21-31 дні (днів)
6836+2.77 грн
Мінімальне замовлення: 6836
IRFIRF7314PBF Infineon Technologies Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
товар відсутній
BAR63-05E6433 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BFS-17-SE Infineon Technologies Description: LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Part Status: Active
товар відсутній
BAR6406WE6327 BAR6406WE6327 Infineon Technologies INFNS15695-1.pdf?t.download=true&u=5oefqw Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: SOT-323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
4157+4.9 грн
Мінімальне замовлення: 4157
BFR750L3RHE6327 BFR750L3RHE6327 Infineon Technologies INFNS10723-1.pdf?t.download=true&u=5oefqw Description: RF BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 360mW
Current - Collector (Ic) (Max): 90mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-TSLP-3
Part Status: Active
на замовлення 36420 шт:
термін постачання 21-31 дні (днів)
944+22.47 грн
Мінімальне замовлення: 944
BAR64-06WH6327 Infineon Technologies INFNS29271-1.pdf?t.download=true&u=5oefqw Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BC856BE6327 BC856BE6327 Infineon Technologies INFNS12319-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
товар відсутній
BAR 67-04 E6327 BAR 67-04 E6327 Infineon Technologies Description: PIN DIODE, 150V V(BR)
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
товар відсутній
BAR6302WE6327 BAR6302WE6327 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SCD80-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BG5120KE6327 Infineon Technologies INFNS13465-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Gain: 30dB
Technology: MOSFET
Noise Figure: 1.1dB
Supplier Device Package: SOT-363
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
на замовлення 879000 шт:
термін постачання 21-31 дні (днів)
3463+6.84 грн
Мінімальне замовлення: 3463
BFR93AWE6327 BFR93AWE6327 Infineon Technologies INFNS25342-1.pdf?t.download=true&u=5oefqw Description: RF BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 15.5dB
Power - Max: 300mW
Current - Collector (Ic) (Max): 90mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: SOT-323
Part Status: Active
товар відсутній
BAR63-06WH6327 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BAR6302VE6327 BAR6302VE6327 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BC849BE6327 BC849BE6327 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
на замовлення 53990 шт:
термін постачання 21-31 дні (днів)
8689+2.08 грн
Мінімальне замовлення: 8689
BAR6405WE6433 Infineon Technologies INFNS15695-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE, 150V V(BR)
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BC849CE6327 BC849CE6327 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
товар відсутній
BC850CE6327 BC850CE6327 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товар відсутній
BAS40-06B5000 BAS40-06B5000 Infineon Technologies INFNS09504-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 137000 шт:
термін постачання 21-31 дні (днів)
10377+2.1 грн
Мінімальне замовлення: 10377
BAS 40-06 E6327 BAS 40-06 E6327 Infineon Technologies INFNS11688-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
товар відсутній
BAS 70-04 E6433 BAS 70-04 E6433 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: SCHOTTKY DIODE
на замовлення 17100 шт:
термін постачання 21-31 дні (днів)
BGF106CE6328 Infineon Technologies INFNS13818-1.pdf?t.download=true&u=5oefqw Description: SIM CARD INTERFACE FILTER
Packaging: Bulk
Voltage - Rated: 5.5V
Package / Case: 8-UFBGA, WLCSP
Size / Dimension: 0.047" L x 0.047" W (1.20mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 47Ohm, 100Ohm, C = 16.5pF (Total)
Height: 0.026" (0.65mm)
Attenuation Value: 16.9dB @ 800MHz ~ 4GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC
Center / Cutoff Frequency: 290MHz (Cutoff)
ESD Protection: Yes
Part Status: Active
Number of Channels: 3
на замовлення 562174 шт:
термін постачання 21-31 дні (днів)
2597+8.32 грн
Мінімальне замовлення: 2597
BGA614E6327 BGA614E6327 Infineon Technologies INFNS16401-1.pdf?t.download=true&u=5oefqw Description: IC RF AMP GPS 1575.42MHZ TSNP7-6
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575.42MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.5dB
Current - Supply: 4.4mA
Noise Figure: 0.7dB
P1dB: -5dBm
Test Frequency: 1575.42MHz
Supplier Device Package: PG-TSNP-7-6
Part Status: Active
товар відсутній
BAR6302WH6327 BAR6302WH6327 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BAR67-04E6327 Infineon Technologies INFNS15417-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE, 150V V(BR)
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
товар відсутній
BAS40-05WH6327 BAS40-05WH6327 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
товар відсутній
BAS125-04WE6327 BAS125-04WE6327 Infineon Technologies INFNS11561-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 25V 100MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 25 V
на замовлення 26600 шт:
термін постачання 21-31 дні (днів)
2968+7.02 грн
Мінімальне замовлення: 2968
BGA420E6433 BGA420E6433 Infineon Technologies INFNS11594-1.pdf?t.download=true&u=5oefqw Description: IC RF AMP GPS 0HZ-3GHZ SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-4
на замовлення 28466 шт:
термін постачання 21-31 дні (днів)
1154+18.25 грн
Мінімальне замовлення: 1154
BC858BWE6327 BC858BWE6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 30V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
13172+1.4 грн
Мінімальне замовлення: 13172
BAS40-06WH6327 BAS40-06WH6327 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
товар відсутній
BAR6502WE6327 BAR6502WE6327 Infineon Technologies INFNS15696-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BC857CE6327 BC857CE6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
на замовлення 816317 шт:
термін постачання 21-31 дні (днів)
10122+2.19 грн
Мінімальне замовлення: 10122
BAS40-04B5003 BAS40-04B5003 Infineon Technologies INFNS09504-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
товар відсутній
BGB719N7ESDE6327 BGB719N7ESDE6327 Infineon Technologies INFNS27313-1.pdf?t.download=true&u=5oefqw Description: IC RF AMP FM 10MHZ-1GHZ TSNP7-6
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 10MHz ~ 1GHz
RF Type: FM
Voltage - Supply: 3V
Gain: 13.5dB
Current - Supply: 2.8mA
Noise Figure: 1.2dB
P1dB: -6dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSNP-7-6
товар відсутній
ILD03N60 ILD03N60 Infineon Technologies INFNS07428-1.pdf?t.download=true&u=5oefqw Description: IGBT, 4.5A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Input Type: Standard
Reverse Recovery Time (trr): 250 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 10V, 3A
Supplier Device Package: PG-TO252-3-1
Td (on/off) @ 25°C: 15ns/100ns
Switching Energy: 12µJ (on), 20µJ (off)
Test Condition: 400V, 0.8A, 60Ohm, 10V
Gate Charge: 8.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 5.5 A
Power - Max: 27 W
товар відсутній
BAS4006WE6327 BAS4006WE6327 Infineon Technologies INFNS11688-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
10377+2.1 грн
Мінімальне замовлення: 10377
BC858AE6327 BC858AE6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
товар відсутній
BC856BWE6327 BC856BWE6327 Infineon Technologies INFNS12319-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
товар відсутній
IRFS75347PPBF Infineon Technologies IRSD-S-A0000176417-1.pdf?t.download=true&u=5oefqw Description: HEXFET POWER MOSFET
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
товар відсутній
BAS40-05B5000 BAS40-05B5000 Infineon Technologies INFNS09504-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
10377+2.1 грн
Мінімальне замовлення: 10377
BAS40-06WE6327 BAS40-06WE6327 Infineon Technologies INFNS11688-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323-3-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 117000 шт:
термін постачання 21-31 дні (днів)
10377+2.1 грн
Мінімальне замовлення: 10377
BAS70-04WE6327 BAS70-04WE6327 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 70V 70MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT323-3-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
1154+18.19 грн
Мінімальне замовлення: 1154
BAS40-04B5000 BAS40-04B5000 Infineon Technologies INFNS09504-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
товар відсутній
KP226N3622 Infineon Technologies Description: AUTOMOTIVE PRESSURE SENSOR
Packaging: Bulk
Part Status: Active
на замовлення 45982 шт:
термін постачання 21-31 дні (днів)
83+277.51 грн
Мінімальне замовлення: 83
BC858CE6327 BC858CE6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
на замовлення 43144 шт:
термін постачання 21-31 дні (днів)
8460+3.04 грн
Мінімальне замовлення: 8460
BAT15-098LRH Infineon Technologies INFNS14601-1.pdf?t.download=true&u=5oefqw Description: MIXER DIODE, LOW BARRIER, X BAND
Packaging: Bulk
Package / Case: 4-XFDFN
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSLP-4-7
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
на замовлення 2998 шт:
термін постачання 21-31 дні (днів)
1484+14.04 грн
Мінімальне замовлення: 1484
BC857CWH6327 BC857CWH6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
товар відсутній
BAR6403WE6327 INFNS15695-1.pdf?t.download=true&u=5oefqw
BAR6403WE6327
Виробник: Infineon Technologies
Description: RF PIN DIODE > ANTENNA SWITCH
товар відсутній
BAR63-04WH6327 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR63-04WH6327
Виробник: Infineon Technologies
Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BC848CWH6327 INFNS16507-1.pdf?t.download=true&u=5oefqw
BC848CWH6327
Виробник: Infineon Technologies
Description: TRANS NPN 30V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
товар відсутній
BAR63-05WH6327 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR63-05WH6327
Виробник: Infineon Technologies
Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BFR193FH6327 Infineon-BFR193F-DS-v01_01-en.pdf?fileId=db3a30431441fb5d0114acfcde76152c
BFR193FH6327
Виробник: Infineon Technologies
Description: HIGH LINEARITY TRANSISTOR
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-TSFP-3-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BAR 64-06WH6327 INFNS29271-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BC848BE6433 INFNS14907-1.pdf?t.download=true&u=5oefqw
BC848BE6433
Виробник: Infineon Technologies
Description: TRANS NPN 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
на замовлення 78655 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8689+2.08 грн
Мінімальне замовлення: 8689
BAR65-02VH6327 INFNS15696-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: PIN DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SC79-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BFS17WE6327 INFNS10687-1.pdf?t.download=true&u=5oefqw
BFS17WE6327
Виробник: Infineon Technologies
Description: RF BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Supplier Device Package: SOT-323
Part Status: Active
товар відсутній
BAR63-03WE6433 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR63-03WE6433
Виробник: Infineon Technologies
Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOD323-3D
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BAR6304WH6327 INFNS15694-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BAR6405E6327 INFN-S-A0002785839-1.pdf?t.download=true&u=5oefqw
BAR6405E6327
Виробник: Infineon Technologies
Description: PIN DIODE, 150V V(BR)
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BC850CWE6327 INFNS14907-1.pdf?t.download=true&u=5oefqw
BC850CWE6327
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
товар відсутній
BC850BE6327 INFNS14907-1.pdf?t.download=true&u=5oefqw
BC850BE6327
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 35665 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6836+2.77 грн
Мінімальне замовлення: 6836
IRFIRF7314PBF
Виробник: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
товар відсутній
BAR63-05E6433 INFNS15694-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BFS-17-SE
Виробник: Infineon Technologies
Description: LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Part Status: Active
товар відсутній
BAR6406WE6327 INFNS15695-1.pdf?t.download=true&u=5oefqw
BAR6406WE6327
Виробник: Infineon Technologies
Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: SOT-323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4157+4.9 грн
Мінімальне замовлення: 4157
BFR750L3RHE6327 INFNS10723-1.pdf?t.download=true&u=5oefqw
BFR750L3RHE6327
Виробник: Infineon Technologies
Description: RF BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 360mW
Current - Collector (Ic) (Max): 90mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-TSLP-3
Part Status: Active
на замовлення 36420 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
944+22.47 грн
Мінімальне замовлення: 944
BAR64-06WH6327 INFNS29271-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BC856BE6327 INFNS12319-1.pdf?t.download=true&u=5oefqw
BC856BE6327
Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
товар відсутній
BAR 67-04 E6327
BAR 67-04 E6327
Виробник: Infineon Technologies
Description: PIN DIODE, 150V V(BR)
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
товар відсутній
BAR6302WE6327 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6302WE6327
Виробник: Infineon Technologies
Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SCD80-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BG5120KE6327 INFNS13465-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Gain: 30dB
Technology: MOSFET
Noise Figure: 1.1dB
Supplier Device Package: SOT-363
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
на замовлення 879000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3463+6.84 грн
Мінімальне замовлення: 3463
BFR93AWE6327 INFNS25342-1.pdf?t.download=true&u=5oefqw
BFR93AWE6327
Виробник: Infineon Technologies
Description: RF BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 15.5dB
Power - Max: 300mW
Current - Collector (Ic) (Max): 90mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: SOT-323
Part Status: Active
товар відсутній
BAR63-06WH6327 INFNS15694-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BAR6302VE6327 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6302VE6327
Виробник: Infineon Technologies
Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BC849BE6327 INFNS14907-1.pdf?t.download=true&u=5oefqw
BC849BE6327
Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
на замовлення 53990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8689+2.08 грн
Мінімальне замовлення: 8689
BAR6405WE6433 INFNS15695-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: PIN DIODE, 150V V(BR)
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BC849CE6327 INFNS14907-1.pdf?t.download=true&u=5oefqw
BC849CE6327
Виробник: Infineon Technologies
Description: TRANS NPN 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
товар відсутній
BC850CE6327 INFNS14907-1.pdf?t.download=true&u=5oefqw
BC850CE6327
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товар відсутній
BAS40-06B5000 INFNS09504-1.pdf?t.download=true&u=5oefqw
BAS40-06B5000
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 137000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10377+2.1 грн
Мінімальне замовлення: 10377
BAS 40-06 E6327 INFNS11688-1.pdf?t.download=true&u=5oefqw
BAS 40-06 E6327
Виробник: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
товар відсутній
BAS 70-04 E6433 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS 70-04 E6433
Виробник: Infineon Technologies
Description: SCHOTTKY DIODE
на замовлення 17100 шт:
термін постачання 21-31 дні (днів)
BGF106CE6328 INFNS13818-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: SIM CARD INTERFACE FILTER
Packaging: Bulk
Voltage - Rated: 5.5V
Package / Case: 8-UFBGA, WLCSP
Size / Dimension: 0.047" L x 0.047" W (1.20mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 47Ohm, 100Ohm, C = 16.5pF (Total)
Height: 0.026" (0.65mm)
Attenuation Value: 16.9dB @ 800MHz ~ 4GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC
Center / Cutoff Frequency: 290MHz (Cutoff)
ESD Protection: Yes
Part Status: Active
Number of Channels: 3
на замовлення 562174 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2597+8.32 грн
Мінімальне замовлення: 2597
BGA614E6327 INFNS16401-1.pdf?t.download=true&u=5oefqw
BGA614E6327
Виробник: Infineon Technologies
Description: IC RF AMP GPS 1575.42MHZ TSNP7-6
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575.42MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.5dB
Current - Supply: 4.4mA
Noise Figure: 0.7dB
P1dB: -5dBm
Test Frequency: 1575.42MHz
Supplier Device Package: PG-TSNP-7-6
Part Status: Active
товар відсутній
BAR6302WH6327 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6302WH6327
Виробник: Infineon Technologies
Description: PIN DIODE, 50V V(BR)
Packaging: Bulk
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BAR67-04E6327 INFNS15417-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: PIN DIODE, 150V V(BR)
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
товар відсутній
BAS40-05WH6327 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS40-05WH6327
Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
товар відсутній
BAS125-04WE6327 INFNS11561-1.pdf?t.download=true&u=5oefqw
BAS125-04WE6327
Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 25V 100MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 25 V
на замовлення 26600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2968+7.02 грн
Мінімальне замовлення: 2968
BGA420E6433 INFNS11594-1.pdf?t.download=true&u=5oefqw
BGA420E6433
Виробник: Infineon Technologies
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-4
на замовлення 28466 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1154+18.25 грн
Мінімальне замовлення: 1154
BC858BWE6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC858BWE6327
Виробник: Infineon Technologies
Description: TRANS PNP 30V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13172+1.4 грн
Мінімальне замовлення: 13172
BAS40-06WH6327 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS40-06WH6327
Виробник: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
товар відсутній
BAR6502WE6327 INFNS15696-1.pdf?t.download=true&u=5oefqw
BAR6502WE6327
Виробник: Infineon Technologies
Description: PIN DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BC857CE6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC857CE6327
Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
на замовлення 816317 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10122+2.19 грн
Мінімальне замовлення: 10122
BAS40-04B5003 INFNS09504-1.pdf?t.download=true&u=5oefqw
BAS40-04B5003
Виробник: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
товар відсутній
BGB719N7ESDE6327 INFNS27313-1.pdf?t.download=true&u=5oefqw
BGB719N7ESDE6327
Виробник: Infineon Technologies
Description: IC RF AMP FM 10MHZ-1GHZ TSNP7-6
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 10MHz ~ 1GHz
RF Type: FM
Voltage - Supply: 3V
Gain: 13.5dB
Current - Supply: 2.8mA
Noise Figure: 1.2dB
P1dB: -6dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSNP-7-6
товар відсутній
ILD03N60 INFNS07428-1.pdf?t.download=true&u=5oefqw
ILD03N60
Виробник: Infineon Technologies
Description: IGBT, 4.5A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Input Type: Standard
Reverse Recovery Time (trr): 250 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 10V, 3A
Supplier Device Package: PG-TO252-3-1
Td (on/off) @ 25°C: 15ns/100ns
Switching Energy: 12µJ (on), 20µJ (off)
Test Condition: 400V, 0.8A, 60Ohm, 10V
Gate Charge: 8.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 5.5 A
Power - Max: 27 W
товар відсутній
BAS4006WE6327 INFNS11688-1.pdf?t.download=true&u=5oefqw
BAS4006WE6327
Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10377+2.1 грн
Мінімальне замовлення: 10377
BC858AE6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC858AE6327
Виробник: Infineon Technologies
Description: TRANS PNP 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
товар відсутній
BC856BWE6327 INFNS12319-1.pdf?t.download=true&u=5oefqw
BC856BWE6327
Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
товар відсутній
IRFS75347PPBF IRSD-S-A0000176417-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: HEXFET POWER MOSFET
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
товар відсутній
BAS40-05B5000 INFNS09504-1.pdf?t.download=true&u=5oefqw
BAS40-05B5000
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10377+2.1 грн
Мінімальне замовлення: 10377
BAS40-06WE6327 INFNS11688-1.pdf?t.download=true&u=5oefqw
BAS40-06WE6327
Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323-3-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 117000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10377+2.1 грн
Мінімальне замовлення: 10377
BAS70-04WE6327 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS70-04WE6327
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 70V 70MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT323-3-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1154+18.19 грн
Мінімальне замовлення: 1154
BAS40-04B5000 INFNS09504-1.pdf?t.download=true&u=5oefqw
BAS40-04B5000
Виробник: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
товар відсутній
KP226N3622
Виробник: Infineon Technologies
Description: AUTOMOTIVE PRESSURE SENSOR
Packaging: Bulk
Part Status: Active
на замовлення 45982 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
83+277.51 грн
Мінімальне замовлення: 83
BC858CE6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC858CE6327
Виробник: Infineon Technologies
Description: TRANS PNP 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
на замовлення 43144 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8460+3.04 грн
Мінімальне замовлення: 8460
BAT15-098LRH INFNS14601-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: MIXER DIODE, LOW BARRIER, X BAND
Packaging: Bulk
Package / Case: 4-XFDFN
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSLP-4-7
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
на замовлення 2998 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1484+14.04 грн
Мінімальне замовлення: 1484
BC857CWH6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC857CWH6327
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
товар відсутній
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