Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (139445) > Сторінка 336 з 2325
Фото | Назва | Виробник | Інформація |
Доступність |
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IHW40T120FKSA1 | Infineon Technologies |
Description: IGBT 1200V 75A 270W TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 48ns/480ns Switching Energy: 6.5mJ Test Condition: 600V, 40A, 15Ohm, 15V Gate Charge: 203 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 105 A Power - Max: 270 W |
на замовлення 2940 шт: термін постачання 21-31 дні (днів) |
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IPI65R150CFDXKSA1 | Infineon Technologies | Description: MOSFET N-CH 650V 22.4A TO262-3 |
на замовлення 12959 шт: термін постачання 21-31 дні (днів) |
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CY7C024-25JXC | Infineon Technologies |
Description: IC SRAM 64KBIT PARALLEL 84PLCC Packaging: Tube Package / Case: 84-LCC (J-Lead) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Dual Port, Asynchronous Memory Format: SRAM Supplier Device Package: 84-PLCC (29.31x29.31) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 4K x 16 DigiKey Programmable: Not Verified |
на замовлення 208 шт: термін постачання 21-31 дні (днів) |
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SGP30N60XKSA1 | Infineon Technologies | Description: IGBT 600V 41A 250W TO263 |
на замовлення 8050 шт: термін постачання 21-31 дні (днів) |
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CY8C20546-24PVXI | Infineon Technologies |
Description: IC MCU 16K FLASH 2K SRAM 48SSOP Packaging: Tube Package / Case: 48-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx6 Program Memory Type: FLASH (16kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 48-SSOP Part Status: Obsolete Number of I/O: 36 DigiKey Programmable: Not Verified |
на замовлення 239 шт: термін постачання 21-31 дні (днів) |
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STK14C88-3NF35TR | Infineon Technologies |
Description: IC NVSRAM 256KBIT PAR 32SOIC Packaging: Bulk Package / Case: 32-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 32-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel Access Time: 35 ns Memory Organization: 32K x 8 |
на замовлення 1544 шт: термін постачання 21-31 дні (днів) |
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SPP03N60C3XKSA1 | Infineon Technologies |
Description: LOW POWER_LEGACY Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 135µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
на замовлення 337118 шт: термін постачання 21-31 дні (днів) |
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CY8CTMG120-56LFXI | Infineon Technologies |
Description: IC TRUETOUCH CAPSENSE 56VQFN Packaging: Tray Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.25V Controller Series: CY8CT Program Memory Type: FLASH (16kB) Applications: Touchscreen Controller Core Processor: M8C Supplier Device Package: 56-QFN (8x8) Part Status: Obsolete DigiKey Programmable: Not Verified |
на замовлення 3296 шт: термін постачання 21-31 дні (днів) |
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SPP12N50C3XKSA1 | Infineon Technologies |
Description: LOW POWER_LEGACY Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 500µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
на замовлення 10429 шт: термін постачання 21-31 дні (днів) |
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ICE2PCS03XKLA1 | Infineon Technologies |
Description: IC PFC CTRLR CCM 100KHZ 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C Voltage - Supply: 11V ~ 25V Frequency - Switching: 100kHz Mode: Continuous Conduction (CCM) Supplier Device Package: PG-DIP-8 Current - Startup: 450 µA |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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IPP60R520C6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 8.1A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 230µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V |
на замовлення 28550 шт: термін постачання 21-31 дні (днів) |
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CY62256NLL-55ZRXE | Infineon Technologies |
Description: IC SRAM 256KBIT PAR 28TSOP I Packaging: Tube Package / Case: 28-TSSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-TSOP I Part Status: Obsolete Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
на замовлення 8390 шт: термін постачання 21-31 дні (днів) |
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IRAM630-1062F2 | Infineon Technologies |
Description: MOD IPM PWR HYBRID Packaging: Tube |
на замовлення 44560 шт: термін постачання 21-31 дні (днів) |
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IPU50R950CEAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 4.3A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V |
на замовлення 119025 шт: термін постачання 21-31 дні (днів) |
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IPI80N07S405AKSA1 | Infineon Technologies |
Description: MOSFET N-CH TO262-3 Packaging: Tube Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Part Status: Obsolete |
на замовлення 11000 шт: термін постачання 21-31 дні (днів) |
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SPI21N10 | Infineon Technologies |
Description: MOSFET N-CH 100V 21A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4V @ 44µA Supplier Device Package: PG-TO262-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 25 V |
на замовлення 1193 шт: термін постачання 21-31 дні (днів) |
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SPI15N65C3XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 15A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 675µA Supplier Device Package: PG-TO262-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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SPP03N60S5XKSA1 | Infineon Technologies |
Description: LOW POWER_LEGACY Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 135µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V |
на замовлення 52060 шт: термін постачання 21-31 дні (днів) |
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SPB03N60C3ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 3.2A TO263-3 Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 135µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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TLE4276SVAKSA1 | Infineon Technologies |
Description: IC REG LIN POS ADJ 400MA TO220-5 Packaging: Tube Package / Case: TO-220-5 Output Type: Adjustable Mounting Type: Through Hole Current - Output: 400mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: P-TO220-5-43 Voltage - Output (Max): 20V Voltage - Output (Min/Fixed): 2.5V Control Features: Inhibit Part Status: Obsolete PSRR: 54dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 25 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IPS075N03LGAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 50A TO251-3 Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO251-3-11 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V |
на замовлення 21184 шт: термін постачання 21-31 дні (днів) |
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IPP90N06S404AKSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
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CY7C4831-10AC | Infineon Technologies |
Description: IC SYNC FIFO 2KX9X2 64LQFP Packaging: Bag Package / Case: 64-LQFP Mounting Type: Surface Mount Function: Synchronous Memory Size: 36K (2K x 9 x 2) Operating Temperature: 0°C ~ 70°C Data Rate: 100MHz Access Time: 8ns Current - Supply (Max): 60mA Supplier Device Package: 64-TQFP (14x14) Bus Directional: Bi-Directional Expansion Type: Depth, Width Programmable Flags Support: Yes Retransmit Capability: No FWFT Support: No Part Status: Obsolete Voltage - Supply: 4.5 V ~ 5.5 V DigiKey Programmable: Not Verified |
на замовлення 269 шт: термін постачання 21-31 дні (днів) |
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FS150R07N3E4B11BOSA1 | Infineon Technologies |
Description: IGBT MOD 650V 150A 430W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 430 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V |
на замовлення 111 шт: термін постачання 21-31 дні (днів) |
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IRFZ48VSPBF | Infineon Technologies | Description: MOSFET N-CH 60V 72A D2PAK |
товар відсутній |
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IPB80N07S405ATMA1 | Infineon Technologies |
Description: MOSFET N-CH TO263-3 Packaging: Bulk Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Part Status: Obsolete |
на замовлення 24755 шт: термін постачання 21-31 дні (днів) |
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IPP65R600C6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 7.3A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 210µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V |
на замовлення 286350 шт: термін постачання 21-31 дні (днів) |
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SKW20N60HSFKSA1 | Infineon Technologies |
Description: IGBT 600V 36A 178W TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 130 ns Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A Supplier Device Package: PG-TO247-3-1 IGBT Type: NPT Td (on/off) @ 25°C: 18ns/207ns Switching Energy: 690µJ Test Condition: 400V, 20A, 16Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 36 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 178 W |
на замовлення 4040 шт: термін постачання 21-31 дні (днів) |
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SPB100N06S2-05 | Infineon Technologies |
Description: MOSFET N-CH 55V 100A TO263-3 Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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SKB02N60ATMA1 | Infineon Technologies |
Description: IGBT 600V 6A 30W TO263-3 Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 130 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Td (on/off) @ 25°C: 20ns/259ns Switching Energy: 64µJ Test Condition: 400V, 2A, 118Ohm, 15V Gate Charge: 14 nC Part Status: Obsolete Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 12 A Power - Max: 30 W |
на замовлення 55000 шт: термін постачання 21-31 дні (днів) |
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TZ500N14KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.4KV 1050A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 669 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 1050 A Voltage - Off State: 1.4 kV |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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SPI12N50C3XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 560V 11.6A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 500µA Supplier Device Package: PG-TO262-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 560 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
на замовлення 950 шт: термін постачання 21-31 дні (днів) |
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TLE72592GUXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER FULL 1/1 DSO-8 Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 7V ~ 27V Number of Drivers/Receivers: 1/1 Data Rate: 10.4KBd Protocol: LINbus Supplier Device Package: PG-DSO-8-16 Receiver Hysteresis: 300 mV Duplex: Full |
на замовлення 19965 шт: термін постачання 21-31 дні (днів) |
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CY24115SXC-2 | Infineon Technologies |
Description: IC CLOCK GENERATOR 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 180.63MHz Type: Clock Generator Input: Clock Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.14V ~ 3.47V Ratio - Input:Output: 1:1 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: No/No Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 12898 шт: термін постачання 21-31 дні (днів) |
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CYD02S36V-167BBC | Infineon Technologies | Description: IC SRAM 2MBIT PARALLEL 256FBGA |
на замовлення 95 шт: термін постачання 21-31 дні (днів) |
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CY7C0241-55AXI | Infineon Technologies |
Description: IC SRAM 72KBIT PARALLEL 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 72Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Dual Port, Asynchronous Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 4K x 18 DigiKey Programmable: Not Verified |
на замовлення 423 шт: термін постачання 21-31 дні (днів) |
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SDP06S60 | Infineon Technologies | Description: DIODE SCHOTTKY 600V 6A TO220AB |
на замовлення 418 шт: термін постачання 21-31 дні (днів) |
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CY2DM1502ZXC | Infineon Technologies | Description: IC CLK BUFFER 1:2 1.5GHZ 8TSSOP |
на замовлення 158 шт: термін постачання 21-31 дні (днів) |
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CY7C25682KV18-500BZC | Infineon Technologies | Description: IC SRAM 72MBIT PARALLEL 165FBGA |
на замовлення 243 шт: термін постачання 21-31 дні (днів) |
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CY2308ESXC-2 | Infineon Technologies |
Description: IC FANOUT BUFFER 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 133.3MHz Type: Fanout Buffer (Distribution), Zero Delay Buffer Input: LVCMOS, LVTTL Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:8 Differential - Input:Output: No/No Supplier Device Package: 16-SOIC PLL: Yes Divider/Multiplier: Yes/Yes Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 293 шт: термін постачання 21-31 дні (днів) |
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IPP100N04S2L03AKSA2 | Infineon Technologies | Description: MOSFET N-CH 40V 100A TO220-3 |
на замовлення 36500 шт: термін постачання 21-31 дні (днів) |
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CY2DP818ZXC-2 | Infineon Technologies |
Description: IC CLK BUFFER 1:8 350MHZ 38TSSOP Packaging: Tube Package / Case: 38-TFSOP (0.173", 4.40mm Width) Number of Circuits: 1 Mounting Type: Surface Mount Output: LVPECL Type: Fanout Buffer (Distribution) Input: LVDS, LVPECL, LVTTL Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:8 Differential - Input:Output: Yes/Yes Supplier Device Package: 38-TSSOP Frequency - Max: 350 MHz |
на замовлення 5328 шт: термін постачання 21-31 дні (днів) |
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IPP065N03LGXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 50A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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CY23S08SXC-2 | Infineon Technologies |
Description: IC FANOUT BUFFER 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 140MHz Type: Fanout Buffer (Distribution), Zero Delay Buffer Input: LVCMOS, LVTTL Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:8 Differential - Input:Output: No/No Supplier Device Package: 16-SOIC PLL: Yes with Bypass Divider/Multiplier: Yes/No Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 4731 шт: термін постачання 21-31 дні (днів) |
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PMA7105XUMA1 | Infineon Technologies |
Description: RF TX IC ASK 315/434MHZ 38TFSOP Packaging: Bulk Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Frequency: 315MHz, 434MHz, 868MHz, 915MHz Memory Size: 6KB Flash, 12KB ROM, 256 Byte RAM Modulation or Protocol: ASK, FSK Data Interface: PCB, Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.9V ~ 3.6V Power - Output: 10dBm Applications: Remote Control, Remote Metering Data Rate (Max): 20kbps Current - Transmitting: 17.1mA Antenna Connector: PCB, Surface Mount Supplier Device Package: PG-TSSOP-38 DigiKey Programmable: Not Verified |
на замовлення 1106 шт: термін постачання 21-31 дні (днів) |
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TLE4209AHKLA1 | Infineon Technologies |
Description: IC MOTOR DRIVER 8V-18V 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 800mA Interface: Parallel Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 8V ~ 18V Applications: General Purpose Technology: Bipolar Voltage - Load: 8V ~ 18V Supplier Device Package: PG-DIP-8 Motor Type - AC, DC: Servo DC Part Status: Obsolete |
на замовлення 122000 шт: термін постачання 21-31 дні (днів) |
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CY7C1168V18-375BZXC | Infineon Technologies |
Description: IC SRAM 18MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II Clock Frequency: 375 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Obsolete Memory Interface: Parallel Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
на замовлення 355 шт: термін постачання 21-31 дні (днів) |
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TLE4278GXUMA1 | Infineon Technologies |
Description: IC REG LINEAR 5V 200MA DSO14-30 Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-14-30 Voltage - Output (Min/Fixed): 5V Control Features: Reset, Watchdog Part Status: Discontinued at Digi-Key Voltage Dropout (Max): 0.5V @ 150mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 12 mA |
на замовлення 26918 шт: термін постачання 21-31 дні (днів) |
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BSC155N06NDATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active |
на замовлення 7129 шт: термін постачання 21-31 дні (днів) |
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EVAL3K3WTPPFCSICTOBO1 | Infineon Technologies |
Description: EVAL_3K3W_TP_PFC_SIC Packaging: Box Function: Power Factor Correction Type: Power Management Utilized IC / Part: 2EDF7275F, IMZA65R048M1, IPW60R017C7, XMC1404 Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Part Status: Active Contents: Board(s) Secondary Attributes: Graphical User Interface (GUI) |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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EVALAUDIOMA12040TOBO1 | Infineon Technologies | Description: EVAL_AUDIO_MA12040 |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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EVAL_TLE9180D-31QK | Infineon Technologies |
Description: EVALUATION BOARD FOR TLE9180D-31 Packaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: TLE9180D-31QK Supplied Contents: Board(s) |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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KIT6W18VP7950VTOBO1 | Infineon Technologies |
Description: IN POWER SUPPLIES THAT ARE USED Packaging: Box Voltage - Output: 18V Voltage - Input: 90V ~ 440V Current - Output: 500mA Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: ICE5QSAG, IPU95R3K7P7 Supplied Contents: Board(s) Main Purpose: DC/DC Converter Outputs and Type: 1, Isolated Part Status: Active Power - Output: 6 W |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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KITXMC2GOXTRXMC1400TOBO1 | Infineon Technologies |
Description: XMC2GO XTREME XMC1400 Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M0 Utilized IC / Part: XMC1404 Platform: XMC1400 XTREME Connectivity Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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FS50R12W2T7B11BOMA1 | Infineon Technologies |
Description: IGBT MOD 1200V 50A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A (Typ) NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 7.9 µA Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V |
товар відсутній |
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FS75R12W2T7B11BOMA1 | Infineon Technologies |
Description: IGBT MOD 1200V 75A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A (Typ) NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 13 µA Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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1EDN7550UXTSA1 | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 6XFDFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSNP-6-13 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Current - Peak Output (Source, Sink): 4A, 8A Part Status: Active DigiKey Programmable: Not Verified |
товар відсутній |
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KITACTBRD60R065S7TOBO1 | Infineon Technologies |
Description: ACTIVE BRIDGE BOARD 60R065S7 Packaging: Box Type: Power Management Supplied Contents: Board(s) Part Status: Active |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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EVAL2K4WACTBRDS7TOBO1 | Infineon Technologies |
Description: EVAL_2K4W_ACT_BRD_S7 Packaging: Box Type: Power Management Supplied Contents: Board(s) Part Status: Active |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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IR38060MBC01TRP | Infineon Technologies |
Description: IC REG BUCK ADJ 6A 35QFN Packaging: Cut Tape (CT) Package / Case: 35-PowerVQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 6A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 400kHz ~ 1.5MHz Voltage - Input (Max): 21V Topology: Buck Supplier Device Package: 35-PQFN (5x6) Synchronous Rectifier: Yes Voltage - Output (Max): 18.38V Voltage - Input (Min): 1.2V Voltage - Output (Min/Fixed): 0.5V Part Status: Active |
товар відсутній |
IHW40T120FKSA1 |
Виробник: Infineon Technologies
Description: IGBT 1200V 75A 270W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/480ns
Switching Energy: 6.5mJ
Test Condition: 600V, 40A, 15Ohm, 15V
Gate Charge: 203 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 270 W
Description: IGBT 1200V 75A 270W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/480ns
Switching Energy: 6.5mJ
Test Condition: 600V, 40A, 15Ohm, 15V
Gate Charge: 203 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 270 W
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
55+ | 382.3 грн |
IPI65R150CFDXKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO262-3
Description: MOSFET N-CH 650V 22.4A TO262-3
на замовлення 12959 шт:
термін постачання 21-31 дні (днів)CY7C024-25JXC |
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 84-PLCC (29.31x29.31)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 64KBIT PARALLEL 84PLCC
Packaging: Tube
Package / Case: 84-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 84-PLCC (29.31x29.31)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
на замовлення 208 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
39+ | 563.4 грн |
SGP30N60XKSA1 |
Виробник: Infineon Technologies
Description: IGBT 600V 41A 250W TO263
Description: IGBT 600V 41A 250W TO263
на замовлення 8050 шт:
термін постачання 21-31 дні (днів)CY8C20546-24PVXI |
Виробник: Infineon Technologies
Description: IC MCU 16K FLASH 2K SRAM 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-SSOP
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 16K FLASH 2K SRAM 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-SSOP
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 239 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
107+ | 204.73 грн |
STK14C88-3NF35TR |
Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
Packaging: Bulk
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 32K x 8
Description: IC NVSRAM 256KBIT PAR 32SOIC
Packaging: Bulk
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 32K x 8
на замовлення 1544 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
31+ | 708.19 грн |
SPP03N60C3XKSA1 |
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 337118 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
799+ | 26.56 грн |
CY8CTMG120-56LFXI |
Виробник: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CT
Program Memory Type: FLASH (16kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC TRUETOUCH CAPSENSE 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CT
Program Memory Type: FLASH (16kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Part Status: Obsolete
DigiKey Programmable: Not Verified
на замовлення 3296 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
54+ | 403.43 грн |
SPP12N50C3XKSA1 |
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 10429 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
268+ | 78.28 грн |
ICE2PCS03XKLA1 |
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 100KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DIP-8
Current - Startup: 450 µA
Description: IC PFC CTRLR CCM 100KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DIP-8
Current - Startup: 450 µA
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
233+ | 90.16 грн |
IPP60R520C6XKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 8.1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Description: MOSFET N-CH 600V 8.1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
на замовлення 28550 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
433+ | 48.23 грн |
CY62256NLL-55ZRXE |
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tube
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tube
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 8390 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
100+ | 234.22 грн |
IRAM630-1062F2 |
на замовлення 44560 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
27+ | 814.64 грн |
IPU50R950CEAKMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
на замовлення 119025 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1731+ | 11.88 грн |
IPI80N07S405AKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH TO262-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Part Status: Obsolete
Description: MOSFET N-CH TO262-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Part Status: Obsolete
на замовлення 11000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
229+ | 91.56 грн |
SPI21N10 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 21A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 44µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 25 V
Description: MOSFET N-CH 100V 21A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 44µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 25 V
на замовлення 1193 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
490+ | 44.4 грн |
SPI15N65C3XKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 650V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
168+ | 125.11 грн |
SPP03N60S5XKSA1 |
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
на замовлення 52060 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
495+ | 43.67 грн |
SPB03N60C3ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: MOSFET N-CH 650V 3.2A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
630+ | 33.55 грн |
TLE4276SVAKSA1 |
Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 400MA TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-5-43
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 400MA TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-5-43
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
306+ | 68.49 грн |
IPS075N03LGAKMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Description: MOSFET N-CH 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
на замовлення 21184 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1484+ | 14.32 грн |
IPP90N06S404AKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Description: MOSFET N-CH 60V 90A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
484+ | 43.33 грн |
CY7C4831-10AC |
Виробник: Infineon Technologies
Description: IC SYNC FIFO 2KX9X2 64LQFP
Packaging: Bag
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 36K (2K x 9 x 2)
Operating Temperature: 0°C ~ 70°C
Data Rate: 100MHz
Access Time: 8ns
Current - Supply (Max): 60mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Bi-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
Description: IC SYNC FIFO 2KX9X2 64LQFP
Packaging: Bag
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 36K (2K x 9 x 2)
Operating Temperature: 0°C ~ 70°C
Data Rate: 100MHz
Access Time: 8ns
Current - Supply (Max): 60mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Bi-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
на замовлення 269 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 902.01 грн |
FS150R07N3E4B11BOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 650V 150A 430W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Description: IGBT MOD 650V 150A 430W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
на замовлення 111 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 11333 грн |
IPB80N07S405ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH TO263-3
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Part Status: Obsolete
Description: MOSFET N-CH TO263-3
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Part Status: Obsolete
на замовлення 24755 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
229+ | 91.56 грн |
IPP65R600C6XKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Description: MOSFET N-CH 650V 7.3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 286350 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
462+ | 47.16 грн |
SKW20N60HSFKSA1 |
Виробник: Infineon Technologies
Description: IGBT 600V 36A 178W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 178 W
Description: IGBT 600V 36A 178W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 178 W
на замовлення 4040 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
121+ | 174.03 грн |
SPB100N06S2-05 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
185+ | 113.22 грн |
SKB02N60ATMA1 |
Виробник: Infineon Technologies
Description: IGBT 600V 6A 30W TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
Description: IGBT 600V 6A 30W TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
на замовлення 55000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
424+ | 49.62 грн |
TZ500N14KOFHPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.4 kV
Description: SCR MODULE 1.4KV 1050A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 669 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.4 kV
на замовлення 8 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 10749.02 грн |
SPI12N50C3XKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 560V 11.6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 560V 11.6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
268+ | 78.28 грн |
TLE72592GUXUMA1 |
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 7V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 10.4KBd
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 300 mV
Duplex: Full
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 7V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 10.4KBd
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 300 mV
Duplex: Full
на замовлення 19965 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
562+ | 37.6 грн |
CY24115SXC-2 |
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 180.63MHz
Type: Clock Generator
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 180.63MHz
Type: Clock Generator
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.14V ~ 3.47V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 12898 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
146+ | 160.29 грн |
CYD02S36V-167BBC |
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 256FBGA
Description: IC SRAM 2MBIT PARALLEL 256FBGA
на замовлення 95 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 11801.82 грн |
CY7C0241-55AXI |
Виробник: Infineon Technologies
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 72KBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 18
DigiKey Programmable: Not Verified
на замовлення 423 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 1230.6 грн |
SDP06S60 |
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 600V 6A TO220AB
Description: DIODE SCHOTTKY 600V 6A TO220AB
на замовлення 418 шт:
термін постачання 21-31 дні (днів)CY2DM1502ZXC |
Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:2 1.5GHZ 8TSSOP
Description: IC CLK BUFFER 1:2 1.5GHZ 8TSSOP
на замовлення 158 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
65+ | 343.15 грн |
CY7C25682KV18-500BZC |
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Description: IC SRAM 72MBIT PARALLEL 165FBGA
на замовлення 243 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 23213.41 грн |
CY2308ESXC-2 |
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 293 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
145+ | 161.07 грн |
IPP100N04S2L03AKSA2 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO220-3
Description: MOSFET N-CH 40V 100A TO220-3
на замовлення 36500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
176+ | 125.38 грн |
CY2DP818ZXC-2 |
Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:8 350MHZ 38TSSOP
Packaging: Tube
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: LVDS, LVPECL, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:8
Differential - Input:Output: Yes/Yes
Supplier Device Package: 38-TSSOP
Frequency - Max: 350 MHz
Description: IC CLK BUFFER 1:8 350MHZ 38TSSOP
Packaging: Tube
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: LVDS, LVPECL, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:8
Differential - Input:Output: Yes/Yes
Supplier Device Package: 38-TSSOP
Frequency - Max: 350 MHz
на замовлення 5328 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
124+ | 169.84 грн |
IPP065N03LGXKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
742+ | 27.96 грн |
CY23S08SXC-2 |
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 140MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 140MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 4731 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
113+ | 206.98 грн |
PMA7105XUMA1 |
Виробник: Infineon Technologies
Description: RF TX IC ASK 315/434MHZ 38TFSOP
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Memory Size: 6KB Flash, 12KB ROM, 256 Byte RAM
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 10dBm
Applications: Remote Control, Remote Metering
Data Rate (Max): 20kbps
Current - Transmitting: 17.1mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-38
DigiKey Programmable: Not Verified
Description: RF TX IC ASK 315/434MHZ 38TFSOP
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Memory Size: 6KB Flash, 12KB ROM, 256 Byte RAM
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 10dBm
Applications: Remote Control, Remote Metering
Data Rate (Max): 20kbps
Current - Transmitting: 17.1mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-38
DigiKey Programmable: Not Verified
на замовлення 1106 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
263+ | 81.91 грн |
TLE4209AHKLA1 |
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 8V-18V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DIP-8
Motor Type - AC, DC: Servo DC
Part Status: Obsolete
Description: IC MOTOR DRIVER 8V-18V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DIP-8
Motor Type - AC, DC: Servo DC
Part Status: Obsolete
на замовлення 122000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
302+ | 69.89 грн |
CY7C1168V18-375BZXC |
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 375 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 375 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
на замовлення 355 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 4136.38 грн |
TLE4278GXUMA1 |
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 200MA DSO14-30
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-30
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Discontinued at Digi-Key
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 12 mA
Description: IC REG LINEAR 5V 200MA DSO14-30
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-30
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Discontinued at Digi-Key
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 12 mA
на замовлення 26918 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
194+ | 120.61 грн |
BSC155N06NDATMA1 |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
на замовлення 7129 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 157.96 грн |
10+ | 97.63 грн |
100+ | 66.43 грн |
500+ | 49.79 грн |
1000+ | 45.74 грн |
2000+ | 42.34 грн |
EVAL3K3WTPPFCSICTOBO1 |
Виробник: Infineon Technologies
Description: EVAL_3K3W_TP_PFC_SIC
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: 2EDF7275F, IMZA65R048M1, IPW60R017C7, XMC1404
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Contents: Board(s)
Secondary Attributes: Graphical User Interface (GUI)
Description: EVAL_3K3W_TP_PFC_SIC
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: 2EDF7275F, IMZA65R048M1, IPW60R017C7, XMC1404
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Contents: Board(s)
Secondary Attributes: Graphical User Interface (GUI)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 38194.27 грн |
EVALAUDIOMA12040TOBO1 |
Виробник: Infineon Technologies
Description: EVAL_AUDIO_MA12040
Description: EVAL_AUDIO_MA12040
на замовлення 3 шт:
термін постачання 21-31 дні (днів)EVAL_TLE9180D-31QK |
Виробник: Infineon Technologies
Description: EVALUATION BOARD FOR TLE9180D-31
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: TLE9180D-31QK
Supplied Contents: Board(s)
Description: EVALUATION BOARD FOR TLE9180D-31
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: TLE9180D-31QK
Supplied Contents: Board(s)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 54227.53 грн |
KIT6W18VP7950VTOBO1 |
Виробник: Infineon Technologies
Description: IN POWER SUPPLIES THAT ARE USED
Packaging: Box
Voltage - Output: 18V
Voltage - Input: 90V ~ 440V
Current - Output: 500mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5QSAG, IPU95R3K7P7
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1, Isolated
Part Status: Active
Power - Output: 6 W
Description: IN POWER SUPPLIES THAT ARE USED
Packaging: Box
Voltage - Output: 18V
Voltage - Input: 90V ~ 440V
Current - Output: 500mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5QSAG, IPU95R3K7P7
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1, Isolated
Part Status: Active
Power - Output: 6 W
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3315.59 грн |
KITXMC2GOXTRXMC1400TOBO1 |
Виробник: Infineon Technologies
Description: XMC2GO XTREME XMC1400
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: XMC1404
Platform: XMC1400 XTREME Connectivity
Part Status: Active
Description: XMC2GO XTREME XMC1400
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: XMC1404
Platform: XMC1400 XTREME Connectivity
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3005.12 грн |
FS50R12W2T7B11BOMA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 50A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7.9 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Description: IGBT MOD 1200V 50A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7.9 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
товар відсутній
FS75R12W2T7B11BOMA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 75A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 13 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
Description: IGBT MOD 1200V 75A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 13 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4570.71 грн |
15+ | 4001.34 грн |
1EDN7550UXTSA1 |
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 6XFDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSNP-6-13
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 6XFDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSNP-6-13
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
KITACTBRD60R065S7TOBO1 |
Виробник: Infineon Technologies
Description: ACTIVE BRIDGE BOARD 60R065S7
Packaging: Box
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Description: ACTIVE BRIDGE BOARD 60R065S7
Packaging: Box
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3469.66 грн |
EVAL2K4WACTBRDS7TOBO1 |
Виробник: Infineon Technologies
Description: EVAL_2K4W_ACT_BRD_S7
Packaging: Box
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL_2K4W_ACT_BRD_S7
Packaging: Box
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 38174.81 грн |
IR38060MBC01TRP |
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 6A 35QFN
Packaging: Cut Tape (CT)
Package / Case: 35-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 35-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.38V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
Description: IC REG BUCK ADJ 6A 35QFN
Packaging: Cut Tape (CT)
Package / Case: 35-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 35-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.38V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
товар відсутній