IRG7CH73K10EF-R Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT 1200V ULTRA FAST DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A
Supplier Device Package: Die
Td (on/off) @ 25°C: 105ns/45ns
Test Condition: 600V, 75A, 5Ohm, 15V
Gate Charge: 420 nC
Voltage - Collector Emitter Breakdown (Max): 1200 V
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Технічний опис IRG7CH73K10EF-R Infineon Technologies
Description: IGBT 1200V ULTRA FAST DIE, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A, Supplier Device Package: Die, Td (on/off) @ 25°C: 105ns/45ns, Test Condition: 600V, 75A, 5Ohm, 15V, Gate Charge: 420 nC, Voltage - Collector Emitter Breakdown (Max): 1200 V.