Продукція > YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO.,LTD > Всі товари виробника YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO.,LTD (1760) > Сторінка 28 з 30

Обрати Сторінку:   [  << Попередня Сторінка ]  1 3 6 9 12 15 18 21 23 24 25 26 27 28 29 30  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
YJG15N15B-F1-0100HF YJG15N15B-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG15N15B_DS.pdf Description: N-CH MOSFET 150V 15A PDFN5060-8L
товар відсутній
YJG15N15B-F1-0100HF YJG15N15B-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG15N15B_DS.pdf Description: N-CH MOSFET 150V 15A PDFN5060-8L
товар відсутній
YJG30N06A YJG30N06A Yangzhou Yangjie Electronic Technology Co.,Ltd YJG30N06A.pdf Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V
товар відсутній
YJG30N06A YJG30N06A Yangzhou Yangjie Electronic Technology Co.,Ltd YJG30N06A.pdf Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V
товар відсутній
YJG30N06A-F1-0100HF YJG30N06A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG30N06A.pdf Description: N-CH MOSFET 60V 30A PDFN5060-8L-
товар відсутній
YJG30N06A-F1-0100HF YJG30N06A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG30N06A.pdf Description: N-CH MOSFET 60V 30A PDFN5060-8L-
товар відсутній
YJG50N03A YJG50N03A Yangzhou Yangjie Electronic Technology Co.,Ltd YJG50N03A.pdf Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V
товар відсутній
YJG50N03A YJG50N03A Yangzhou Yangjie Electronic Technology Co.,Ltd YJG50N03A.pdf Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V
товар відсутній
YJG50N03A-F1-0100HF YJG50N03A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG50N03A.pdf Description: N-CH MOSFET 30V 50A PDFN5060-8L-
товар відсутній
YJG50N03A-F1-0100HF YJG50N03A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG50N03A.pdf Description: N-CH MOSFET 30V 50A PDFN5060-8L-
товар відсутній
YJG53G06A-F1-0100HF YJG53G06A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG53G06A.pdf Description: N-CH MOSFET 60V 53A PDFN5060-8L-
товар відсутній
YJG53G06A-F1-0100HF YJG53G06A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG53G06A.pdf Description: N-CH MOSFET 60V 53A PDFN5060-8L-
товар відсутній
YJG60G10A-F1-0100HF YJG60G10A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG60G10A.pdf Description: N-CH MOSFET 100V 60A PDFN5060-8L
товар відсутній
YJG60G10A-F1-0100HF YJG60G10A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG60G10A.pdf Description: N-CH MOSFET 100V 60A PDFN5060-8L
товар відсутній
YJG95G06A-F1-0100HF YJG95G06A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG95G06A.pdf Description: N-CH MOSFET 60V 95A PDFN5060-8L-
товар відсутній
YJG95G06A-F1-0100HF YJG95G06A-F1-0100HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJG95G06A.pdf Description: N-CH MOSFET 60V 95A PDFN5060-8L-
товар відсутній
YJJ09N03A YJJ09N03A Yangzhou Yangjie Electronic Technology Co.,Ltd YJJ09N03A.pdf Description: N-CH MOSFET 30V 9A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V
товар відсутній
YJJ09N03A YJJ09N03A Yangzhou Yangjie Electronic Technology Co.,Ltd YJJ09N03A.pdf Description: N-CH MOSFET 30V 9A SOT-23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V
товар відсутній
YJJ09N03A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJJ09N03A.pdf Description: N-CH MOSFET 30V 9A SOT-23-6L
товар відсутній
YJJ09N03A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJJ09N03A.pdf Description: N-CH MOSFET 30V 9A SOT-23-6L
товар відсутній
YJL02N10A YJL02N10A Yangzhou Yangjie Electronic Technology Co.,Ltd YJL02N10A.pdf Description: N-CH MOSFET 100V 2A SOT-23-3L
товар відсутній
YJL02N10A YJL02N10A Yangzhou Yangjie Electronic Technology Co.,Ltd YJL02N10A.pdf Description: N-CH MOSFET 100V 2A SOT-23-3L
товар відсутній
YJL02N10A-F2-0000HF YJL02N10A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL02N10A.pdf Description: N-CH MOSFET 100V 2A SOT-23-3L
товар відсутній
YJL02N10A-F2-0000HF YJL02N10A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL02N10A.pdf Description: N-CH MOSFET 100V 2A SOT-23-3L
товар відсутній
YJL03G10A-F2-0000HF YJL03G10A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL03G10A.pdf Description: N-CH MOSFET 100V 3A SOT-23-3L
товар відсутній
YJL03G10A-F2-0000HF YJL03G10A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL03G10A.pdf Description: N-CH MOSFET 100V 3A SOT-23-3L
товар відсутній
YJL03N06A YJL03N06A Yangzhou Yangjie Electronic Technology Co.,Ltd YJL03N06A.pdf Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 30 V
на замовлення 858 шт:
термін постачання 21-31 дні (днів)
15+21.29 грн
18+ 16.55 грн
100+ 8.76 грн
500+ 5.41 грн
Мінімальне замовлення: 15
YJL03N06A YJL03N06A Yangzhou Yangjie Electronic Technology Co.,Ltd YJL03N06A.pdf Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 30 V
товар відсутній
YJL03N06A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL03N06A.pdf Description: N-CH MOSFET 60V 3A SOT-23-3L
на замовлення 720 шт:
термін постачання 21-31 дні (днів)
9+35.73 грн
12+ 25.99 грн
100+ 14.73 грн
500+ 9.15 грн
Мінімальне замовлення: 9
YJL03N06A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL03N06A.pdf Description: N-CH MOSFET 60V 3A SOT-23-3L
товар відсутній
YJL03N06B YJL03N06B Yangzhou Yangjie Electronic Technology Co.,Ltd YJL03N06B.pdf Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 451 pF @ 30 V
товар відсутній
YJL03N06B YJL03N06B Yangzhou Yangjie Electronic Technology Co.,Ltd YJL03N06B.pdf Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 451 pF @ 30 V
товар відсутній
YJL03N06B-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL03N06B.pdf Description: N-CH MOSFET 60V 3A SOT-23-3L
товар відсутній
YJL03N06B-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL03N06B.pdf Description: N-CH MOSFET 60V 3A SOT-23-3L
товар відсутній
YJL05N04A-F2-0000HF YJL05N04A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL05N04A%20Rev%203.0.pdf Description: N-CH MOSFET 40V 5A SOT-23-3L
товар відсутній
YJL05N04A-F2-0000HF YJL05N04A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL05N04A%20Rev%203.0.pdf Description: N-CH MOSFET 40V 5A SOT-23-3L
товар відсутній
YJL2101W YJL2101W Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2101W.pdf Description: P-CH MOSFET 20V 2A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
товар відсутній
YJL2101W YJL2101W Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2101W.pdf Description: P-CH MOSFET 20V 2A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
товар відсутній
YJL2101W-F2-0000HF YJL2101W-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2101W.pdf Description: P-CH MOSFET 20V 2A SOT-323
товар відсутній
YJL2101W-F2-0000HF YJL2101W-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2101W.pdf Description: P-CH MOSFET 20V 2A SOT-323
товар відсутній
YJL2102W YJL2102W Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2102W.pdf Description: N-CH MOSFET 20V 3A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
товар відсутній
YJL2102W YJL2102W Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2102W.pdf Description: N-CH MOSFET 20V 3A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
товар відсутній
YJL2102W-F2-0000HF YJL2102W-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2102W.pdf Description: N-CH MOSFET 20V 3A SOT-323
товар відсутній
YJL2102W-F2-0000HF YJL2102W-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2102W.pdf Description: N-CH MOSFET 20V 3A SOT-323
товар відсутній
YJL2301C YJL2301C Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2301C%20Rev%203.0.pdf Description: P-CH MOSFET 20V 3.4A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V
товар відсутній
YJL2301C YJL2301C Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2301C%20Rev%203.0.pdf Description: P-CH MOSFET 20V 3.4A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
15+21.29 грн
18+ 16.55 грн
100+ 8.76 грн
Мінімальне замовлення: 15
YJL2301C-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2301C%20Rev%203.0.pdf Description: P-CH MOSFET 20V 3.4A SOT-23-3L
товар відсутній
YJL2301C-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2301C%20Rev%203.0.pdf Description: P-CH MOSFET 20V 3.4A SOT-23-3L
на замовлення 1292 шт:
термін постачання 21-31 дні (днів)
14+22.05 грн
17+ 17.28 грн
100+ 9.17 грн
500+ 5.66 грн
1000+ 3.85 грн
Мінімальне замовлення: 14
YJL2301F YJL2301F Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2301F.pdf Description: P-CH MOSFET 20V 2A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
на замовлення 275 шт:
термін постачання 21-31 дні (днів)
20+15.21 грн
23+ 13.11 грн
100+ 7.15 грн
Мінімальне замовлення: 20
YJL2301F YJL2301F Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2301F.pdf Description: P-CH MOSFET 20V 2A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
товар відсутній
YJL2301F-F2-0000HF YJL2301F-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2301F.pdf Description: P-CH MOSFET 20V 2A SOT-23-3L
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.84 грн
Мінімальне замовлення: 3000
YJL2301F-F2-0000HF YJL2301F-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2301F.pdf Description: P-CH MOSFET 20V 2A SOT-23-3L
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
14+22.05 грн
17+ 17.28 грн
100+ 9.17 грн
500+ 5.66 грн
1000+ 3.85 грн
Мінімальне замовлення: 14
YJL2302A YJL2302A Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2302A.pdf Description: N-CH MOSFET 20V 4.3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 20 V
товар відсутній
YJL2302A YJL2302A Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2302A.pdf Description: N-CH MOSFET 20V 4.3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 20 V
товар відсутній
YJL2302A-F2-0000HF YJL2302A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2302A.pdf Description: N-CH MOSFET 20V 4.3A SOT-23-3L
товар відсутній
YJL2302A-F2-0000HF YJL2302A-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2302A.pdf Description: N-CH MOSFET 20V 4.3A SOT-23-3L
товар відсутній
YJL2302B YJL2302B Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2302B.pdf Description: N-CH MOSFET 20V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
товар відсутній
YJL2302B YJL2302B Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2302B.pdf Description: N-CH MOSFET 20V 3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
товар відсутній
YJL2302B-F2-0000HF YJL2302B-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2302B.pdf Description: N-CH MOSFET 20V 3A SOT-23-3L
товар відсутній
YJL2302B-F2-0000HF YJL2302B-F2-0000HF Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2302B.pdf Description: N-CH MOSFET 20V 3A SOT-23-3L
товар відсутній
YJG15N15B-F1-0100HF YJG15N15B_DS.pdf
YJG15N15B-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 150V 15A PDFN5060-8L
товар відсутній
YJG15N15B-F1-0100HF YJG15N15B_DS.pdf
YJG15N15B-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 150V 15A PDFN5060-8L
товар відсутній
YJG30N06A YJG30N06A.pdf
YJG30N06A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V
товар відсутній
YJG30N06A YJG30N06A.pdf
YJG30N06A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 30A PDFN5060-8L-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2027 pF @ 30 V
товар відсутній
YJG30N06A-F1-0100HF YJG30N06A.pdf
YJG30N06A-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 30A PDFN5060-8L-
товар відсутній
YJG30N06A-F1-0100HF YJG30N06A.pdf
YJG30N06A-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 30A PDFN5060-8L-
товар відсутній
YJG50N03A YJG50N03A.pdf
YJG50N03A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V
товар відсутній
YJG50N03A YJG50N03A.pdf
YJG50N03A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 50A PDFN5060-8L-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2504 pF @ 15 V
товар відсутній
YJG50N03A-F1-0100HF YJG50N03A.pdf
YJG50N03A-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 50A PDFN5060-8L-
товар відсутній
YJG50N03A-F1-0100HF YJG50N03A.pdf
YJG50N03A-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 50A PDFN5060-8L-
товар відсутній
YJG53G06A-F1-0100HF YJG53G06A.pdf
YJG53G06A-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 53A PDFN5060-8L-
товар відсутній
YJG53G06A-F1-0100HF YJG53G06A.pdf
YJG53G06A-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 53A PDFN5060-8L-
товар відсутній
YJG60G10A-F1-0100HF YJG60G10A.pdf
YJG60G10A-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 60A PDFN5060-8L
товар відсутній
YJG60G10A-F1-0100HF YJG60G10A.pdf
YJG60G10A-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 60A PDFN5060-8L
товар відсутній
YJG95G06A-F1-0100HF YJG95G06A.pdf
YJG95G06A-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 95A PDFN5060-8L-
товар відсутній
YJG95G06A-F1-0100HF YJG95G06A.pdf
YJG95G06A-F1-0100HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 95A PDFN5060-8L-
товар відсутній
YJJ09N03A YJJ09N03A.pdf
YJJ09N03A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 9A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V
товар відсутній
YJJ09N03A YJJ09N03A.pdf
YJJ09N03A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 9A SOT-23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V
товар відсутній
YJJ09N03A-F2-0000HF YJJ09N03A.pdf
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 9A SOT-23-6L
товар відсутній
YJJ09N03A-F2-0000HF YJJ09N03A.pdf
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 9A SOT-23-6L
товар відсутній
YJL02N10A YJL02N10A.pdf
YJL02N10A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 2A SOT-23-3L
товар відсутній
YJL02N10A YJL02N10A.pdf
YJL02N10A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 2A SOT-23-3L
товар відсутній
YJL02N10A-F2-0000HF YJL02N10A.pdf
YJL02N10A-F2-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 2A SOT-23-3L
товар відсутній
YJL02N10A-F2-0000HF YJL02N10A.pdf
YJL02N10A-F2-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 2A SOT-23-3L
товар відсутній
YJL03G10A-F2-0000HF YJL03G10A.pdf
YJL03G10A-F2-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 3A SOT-23-3L
товар відсутній
YJL03G10A-F2-0000HF YJL03G10A.pdf
YJL03G10A-F2-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 3A SOT-23-3L
товар відсутній
YJL03N06A YJL03N06A.pdf
YJL03N06A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 30 V
на замовлення 858 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
15+21.29 грн
18+ 16.55 грн
100+ 8.76 грн
500+ 5.41 грн
Мінімальне замовлення: 15
YJL03N06A YJL03N06A.pdf
YJL03N06A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 30 V
товар відсутній
YJL03N06A-F2-0000HF YJL03N06A.pdf
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
на замовлення 720 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+35.73 грн
12+ 25.99 грн
100+ 14.73 грн
500+ 9.15 грн
Мінімальне замовлення: 9
YJL03N06A-F2-0000HF YJL03N06A.pdf
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
товар відсутній
YJL03N06B YJL03N06B.pdf
YJL03N06B
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 451 pF @ 30 V
товар відсутній
YJL03N06B YJL03N06B.pdf
YJL03N06B
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 451 pF @ 30 V
товар відсутній
YJL03N06B-F2-0000HF YJL03N06B.pdf
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
товар відсутній
YJL03N06B-F2-0000HF YJL03N06B.pdf
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 60V 3A SOT-23-3L
товар відсутній
YJL05N04A-F2-0000HF YJL05N04A%20Rev%203.0.pdf
YJL05N04A-F2-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 40V 5A SOT-23-3L
товар відсутній
YJL05N04A-F2-0000HF YJL05N04A%20Rev%203.0.pdf
YJL05N04A-F2-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 40V 5A SOT-23-3L
товар відсутній
YJL2101W YJL2101W.pdf
YJL2101W
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
товар відсутній
YJL2101W YJL2101W.pdf
YJL2101W
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
товар відсутній
YJL2101W-F2-0000HF YJL2101W.pdf
YJL2101W-F2-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-323
товар відсутній
YJL2101W-F2-0000HF YJL2101W.pdf
YJL2101W-F2-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-323
товар відсутній
YJL2102W YJL2102W.pdf
YJL2102W
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
товар відсутній
YJL2102W YJL2102W.pdf
YJL2102W
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
товар відсутній
YJL2102W-F2-0000HF YJL2102W.pdf
YJL2102W-F2-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-323
товар відсутній
YJL2102W-F2-0000HF YJL2102W.pdf
YJL2102W-F2-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-323
товар відсутній
YJL2301C YJL2301C%20Rev%203.0.pdf
YJL2301C
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 3.4A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V
товар відсутній
YJL2301C YJL2301C%20Rev%203.0.pdf
YJL2301C
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 3.4A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 10 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
15+21.29 грн
18+ 16.55 грн
100+ 8.76 грн
Мінімальне замовлення: 15
YJL2301C-F2-0000HF YJL2301C%20Rev%203.0.pdf
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 3.4A SOT-23-3L
товар відсутній
YJL2301C-F2-0000HF YJL2301C%20Rev%203.0.pdf
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 3.4A SOT-23-3L
на замовлення 1292 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+22.05 грн
17+ 17.28 грн
100+ 9.17 грн
500+ 5.66 грн
1000+ 3.85 грн
Мінімальне замовлення: 14
YJL2301F YJL2301F.pdf
YJL2301F
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
на замовлення 275 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
20+15.21 грн
23+ 13.11 грн
100+ 7.15 грн
Мінімальне замовлення: 20
YJL2301F YJL2301F.pdf
YJL2301F
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
товар відсутній
YJL2301F-F2-0000HF YJL2301F.pdf
YJL2301F-F2-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-23-3L
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+3.84 грн
Мінімальне замовлення: 3000
YJL2301F-F2-0000HF YJL2301F.pdf
YJL2301F-F2-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-23-3L
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+22.05 грн
17+ 17.28 грн
100+ 9.17 грн
500+ 5.66 грн
1000+ 3.85 грн
Мінімальне замовлення: 14
YJL2302A YJL2302A.pdf
YJL2302A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 4.3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 20 V
товар відсутній
YJL2302A YJL2302A.pdf
YJL2302A
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 4.3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 20 V
товар відсутній
YJL2302A-F2-0000HF YJL2302A.pdf
YJL2302A-F2-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 4.3A SOT-23-3L
товар відсутній
YJL2302A-F2-0000HF YJL2302A.pdf
YJL2302A-F2-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 4.3A SOT-23-3L
товар відсутній
YJL2302B YJL2302B.pdf
YJL2302B
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
товар відсутній
YJL2302B YJL2302B.pdf
YJL2302B
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
товар відсутній
YJL2302B-F2-0000HF YJL2302B.pdf
YJL2302B-F2-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-23-3L
товар відсутній
YJL2302B-F2-0000HF YJL2302B.pdf
YJL2302B-F2-0000HF
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-23-3L
товар відсутній
Обрати Сторінку:   [  << Попередня Сторінка ]  1 3 6 9 12 15 18 21 23 24 25 26 27 28 29 30  [ Наступна Сторінка >> ]