Продукція > YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO.,LTD > Всі товари виробника YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO.,LTD (1758) > Сторінка 29 з 30
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
YJL2304A-F2-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 30V 3.6A SOT-23-3L |
товар відсутній |
||||||||||||
YJL2304A-F2-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 30V 3.6A SOT-23-3L |
товар відсутній |
||||||||||||
YJL2305A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: P-CH MOSFET 15V 5.6A SOT-23-3L |
товар відсутній |
||||||||||||
YJL2305A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: P-CH MOSFET 15V 5.6A SOT-23-3L |
товар відсутній |
||||||||||||
YJL2305B | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 20V 5.4A SOT-23-3L Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.4A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V |
товар відсутній |
||||||||||||
YJL2305B | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 20V 5.4A SOT-23-3L Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.4A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V |
на замовлення 1137 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
YJL2305B-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: P-CH MOSFET 20V 5.4A SOT-23-3L |
товар відсутній |
||||||||||||
YJL2305B-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: P-CH MOSFET 20V 5.4A SOT-23-3L |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
YJL2312A-F2-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 20V 6.8A SOT-23-3L |
товар відсутній |
||||||||||||
YJL2312A-F2-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 20V 6.8A SOT-23-3L |
товар відсутній |
||||||||||||
YJL3134KW | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 20V 0.75A SOT-323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 260mOhm @ 500mA, 4.5V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V |
товар відсутній |
||||||||||||
YJL3134KW | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 20V 0.75A SOT-323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 260mOhm @ 500mA, 4.5V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V |
товар відсутній |
||||||||||||
YJL3134KW-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 20V 0.75A SOT-323 |
товар відсутній |
||||||||||||
YJL3134KW-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 20V 0.75A SOT-323 |
товар відсутній |
||||||||||||
YJL3400A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 5.6A SOT-23-3L Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V |
товар відсутній |
||||||||||||
YJL3400A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 5.6A SOT-23-3L Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V |
на замовлення 363 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
YJL3400A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 30V 5.6A SOT-23-3L |
товар відсутній |
||||||||||||
YJL3400A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 30V 5.6A SOT-23-3L |
на замовлення 1536 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
YJL3401A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 30V 4.4A SOT-23-3L Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V |
товар відсутній |
||||||||||||
YJL3401A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 30V 4.4A SOT-23-3L Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V |
на замовлення 1960 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
YJL3401A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: P-CH MOSFET 30V 4.4A SOT-23-3L |
товар відсутній |
||||||||||||
YJL3401A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: P-CH MOSFET 30V 4.4A SOT-23-3L |
товар відсутній |
||||||||||||
YJL3404A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 5.6A SOT-23-3L Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A,, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 15 V |
на замовлення 3199 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
YJL3404A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 5.6A SOT-23-3L Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A,, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 15 V |
товар відсутній |
||||||||||||
YJL3404A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 30V 5.6A SOT-23-3L |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
YJL3404A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 30V 5.6A SOT-23-3L |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
YJL3407A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 30V 4.1A SOT-23-3L Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 49mOhm @ 4.1A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 572 pF @ 15 V |
товар відсутній |
||||||||||||
YJL3407A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 30V 4.1A SOT-23-3L Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 49mOhm @ 4.1A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 572 pF @ 15 V |
на замовлення 1652 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
YJL3407A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: P-CH MOSFET 30V 4.1A SOT-23-3L |
товар відсутній |
||||||||||||
YJL3407A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: P-CH MOSFET 30V 4.1A SOT-23-3L |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
YJL3415A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 20V 5.6A SOT-23-3L Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.6A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V |
товар відсутній |
||||||||||||
YJL3415A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 20V 5.6A SOT-23-3L Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.6A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V |
на замовлення 75 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
YJL3415A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: P-CH MOSFET 20V 5.6A SOT-23-3L |
товар відсутній |
||||||||||||
YJL3415A-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: P-CH MOSFET 20V 5.6A SOT-23-3L |
на замовлення 2890 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
YJL3416A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 20V 7A SOT-23-3L Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V |
товар відсутній |
||||||||||||
YJL3416A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 20V 7A SOT-23-3L Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V |
на замовлення 748 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
YJL3416A-F2-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 20V 7A SOT-23-3L |
на замовлення 2831 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
YJL3416A-F2-0100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 20V 7A SOT-23-3L |
товар відсутній |
||||||||||||
YJQ1216A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 20V 16A DFN2020-6L-E Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 4.5V Power Dissipation (Max): 18W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 72.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2992 pF @ 10 V |
товар відсутній |
||||||||||||
YJQ1216A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 20V 16A DFN2020-6L-E Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 4.5V Power Dissipation (Max): 18W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 72.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2992 pF @ 10 V |
товар відсутній |
||||||||||||
YJQ1216A-F1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: P-CH MOSFET 20V 16A DFN2020-6L-E |
товар відсутній |
||||||||||||
YJQ1216A-F1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: P-CH MOSFET 20V 16A DFN2020-6L-E |
товар відсутній |
||||||||||||
YJQ30N03A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 30A DFN3333-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3.3x3.3) Part Status: Active |
товар відсутній |
||||||||||||
YJQ30N03A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 30A DFN3333-8L Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3.3x3.3) Part Status: Active |
товар відсутній |
||||||||||||
YJQ3400A-F1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 30V 7.7A DFN2020-6L- |
товар відсутній |
||||||||||||
YJQ3400A-F1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 30V 7.7A DFN2020-6L- |
товар відсутній |
||||||||||||
YJQ35N04A-F1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 40V 35A DFN3333-8L |
товар відсутній |
||||||||||||
YJQ35N04A-F1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 40V 35A DFN3333-8L |
товар відсутній |
||||||||||||
YJQ3622A-F1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 30V 30A DFN3333-8L |
товар відсутній |
||||||||||||
YJQ3622A-F1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 30V 30A DFN3333-8L |
товар відсутній |
||||||||||||
YJQ40G10A-F1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 100V 40A DFN3333-8L- |
товар відсутній |
||||||||||||
YJQ40G10A-F1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 100V 40A DFN3333-8L- |
товар відсутній |
||||||||||||
YJQ40P03A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 30V 40A DFN3333-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 20V Power Dissipation (Max): 32W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-DFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2152 pF @ 15 V |
товар відсутній |
||||||||||||
YJQ40P03A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 30V 40A DFN3333-8L Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 20V Power Dissipation (Max): 32W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-DFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2152 pF @ 15 V |
товар відсутній |
||||||||||||
YJQ40P03A-F1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: P-CH MOSFET 30V 40A DFN3333-8L |
товар відсутній |
||||||||||||
YJQ40P03A-F1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: P-CH MOSFET 30V 40A DFN3333-8L |
товар відсутній |
||||||||||||
YJQ4666B-F1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: P-CH MOSFET 16V 7A DFN2020-6L-C- |
товар відсутній |
||||||||||||
YJQ4666B-F1-1100HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: P-CH MOSFET 16V 7A DFN2020-6L-C- |
товар відсутній |
||||||||||||
YJQ50N03B | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 50A DFN3333-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3.3x3.3) Part Status: Active |
товар відсутній |
||||||||||||
YJQ50N03B | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 50A DFN3333-8L Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3.3x3.3) Part Status: Active |
товар відсутній |
YJL2304A-F2-0100HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 3.6A SOT-23-3L
Description: N-CH MOSFET 30V 3.6A SOT-23-3L
товар відсутній
YJL2304A-F2-0100HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 3.6A SOT-23-3L
Description: N-CH MOSFET 30V 3.6A SOT-23-3L
товар відсутній
YJL2305A-F2-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 15V 5.6A SOT-23-3L
Description: P-CH MOSFET 15V 5.6A SOT-23-3L
товар відсутній
YJL2305A-F2-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 15V 5.6A SOT-23-3L
Description: P-CH MOSFET 15V 5.6A SOT-23-3L
товар відсутній
YJL2305B |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 5.4A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Description: P-CH MOSFET 20V 5.4A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
товар відсутній
YJL2305B |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 5.4A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Description: P-CH MOSFET 20V 5.4A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
на замовлення 1137 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 24.12 грн |
20+ | 15.66 грн |
100+ | 7.66 грн |
500+ | 6 грн |
1000+ | 4.17 грн |
YJL2305B-F2-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 5.4A SOT-23-3L
Description: P-CH MOSFET 20V 5.4A SOT-23-3L
товар відсутній
YJL2305B-F2-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 5.4A SOT-23-3L
Description: P-CH MOSFET 20V 5.4A SOT-23-3L
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 22.57 грн |
17+ | 17.83 грн |
100+ | 9.49 грн |
500+ | 5.86 грн |
1000+ | 3.98 грн |
YJL2312A-F2-0100HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 6.8A SOT-23-3L
Description: N-CH MOSFET 20V 6.8A SOT-23-3L
товар відсутній
YJL2312A-F2-0100HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 6.8A SOT-23-3L
Description: N-CH MOSFET 20V 6.8A SOT-23-3L
товар відсутній
YJL3134KW |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 0.75A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 500mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V
Description: N-CH MOSFET 20V 0.75A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 500mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V
товар відсутній
YJL3134KW |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 0.75A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 500mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V
Description: N-CH MOSFET 20V 0.75A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 500mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V
товар відсутній
YJL3134KW-F2-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 0.75A SOT-323
Description: N-CH MOSFET 20V 0.75A SOT-323
товар відсутній
YJL3134KW-F2-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 0.75A SOT-323
Description: N-CH MOSFET 20V 0.75A SOT-323
товар відсутній
YJL3400A |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
товар відсутній
YJL3400A |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
на замовлення 363 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 20.23 грн |
19+ | 16.04 грн |
100+ | 8.52 грн |
YJL3400A-F2-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
товар відсутній
YJL3400A-F2-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
на замовлення 1536 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 22.57 грн |
17+ | 17.83 грн |
100+ | 9.49 грн |
500+ | 5.86 грн |
1000+ | 3.98 грн |
YJL3401A |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 4.4A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Description: P-CH MOSFET 30V 4.4A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
товар відсутній
YJL3401A |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 4.4A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Description: P-CH MOSFET 30V 4.4A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
на замовлення 1960 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 21.01 грн |
22+ | 13.64 грн |
100+ | 6.66 грн |
500+ | 5.21 грн |
1000+ | 3.62 грн |
YJL3401A-F2-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 4.4A SOT-23-3L
Description: P-CH MOSFET 30V 4.4A SOT-23-3L
товар відсутній
YJL3401A-F2-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 4.4A SOT-23-3L
Description: P-CH MOSFET 30V 4.4A SOT-23-3L
товар відсутній
YJL3404A |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A,, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 15 V
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A,, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 15 V
на замовлення 3199 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 21.79 грн |
21+ | 14.31 грн |
100+ | 6.99 грн |
500+ | 5.47 грн |
1000+ | 3.8 грн |
YJL3404A |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A,, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 15 V
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A,, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 15 V
товар відсутній
YJL3404A-F2-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.86 грн |
YJL3404A-F2-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
Description: N-CH MOSFET 30V 5.6A SOT-23-3L
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 21.79 грн |
18+ | 17.31 грн |
100+ | 9.21 грн |
500+ | 5.69 грн |
1000+ | 3.87 грн |
YJL3407A |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 4.1A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 572 pF @ 15 V
Description: P-CH MOSFET 30V 4.1A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 572 pF @ 15 V
товар відсутній
YJL3407A |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 4.1A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 572 pF @ 15 V
Description: P-CH MOSFET 30V 4.1A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 572 pF @ 15 V
на замовлення 1652 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 22.57 грн |
20+ | 14.99 грн |
100+ | 7.33 грн |
500+ | 5.73 грн |
1000+ | 3.98 грн |
YJL3407A-F2-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 4.1A SOT-23-3L
Description: P-CH MOSFET 30V 4.1A SOT-23-3L
товар відсутній
YJL3407A-F2-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 4.1A SOT-23-3L
Description: P-CH MOSFET 30V 4.1A SOT-23-3L
на замовлення 18 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 22.57 грн |
17+ | 17.68 грн |
YJL3415A |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 5.6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
Description: P-CH MOSFET 20V 5.6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
товар відсутній
YJL3415A |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 5.6A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
Description: P-CH MOSFET 20V 5.6A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
на замовлення 75 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 23.34 грн |
17+ | 18.58 грн |
YJL3415A-F2-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 5.6A SOT-23-3L
Description: P-CH MOSFET 20V 5.6A SOT-23-3L
товар відсутній
YJL3415A-F2-0000HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 5.6A SOT-23-3L
Description: P-CH MOSFET 20V 5.6A SOT-23-3L
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 36.57 грн |
12+ | 26.3 грн |
100+ | 14.91 грн |
500+ | 9.27 грн |
1000+ | 7.1 грн |
YJL3416A |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 7A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Description: N-CH MOSFET 20V 7A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
товар відсутній
YJL3416A |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 7A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Description: N-CH MOSFET 20V 7A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
на замовлення 748 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 23.34 грн |
17+ | 18.58 грн |
100+ | 9.87 грн |
500+ | 6.09 грн |
YJL3416A-F2-0100HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 7A SOT-23-3L
Description: N-CH MOSFET 20V 7A SOT-23-3L
на замовлення 2831 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 22.57 грн |
17+ | 17.68 грн |
100+ | 9.38 грн |
500+ | 5.79 грн |
1000+ | 3.94 грн |
YJL3416A-F2-0100HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 7A SOT-23-3L
Description: N-CH MOSFET 20V 7A SOT-23-3L
товар відсутній
YJQ1216A |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 16A DFN2020-6L-E
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 4.5V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2992 pF @ 10 V
Description: P-CH MOSFET 20V 16A DFN2020-6L-E
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 4.5V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2992 pF @ 10 V
товар відсутній
YJQ1216A |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 16A DFN2020-6L-E
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 4.5V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2992 pF @ 10 V
Description: P-CH MOSFET 20V 16A DFN2020-6L-E
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 4.5V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2992 pF @ 10 V
товар відсутній
YJQ1216A-F1-1100HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 16A DFN2020-6L-E
Description: P-CH MOSFET 20V 16A DFN2020-6L-E
товар відсутній
YJQ1216A-F1-1100HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 16A DFN2020-6L-E
Description: P-CH MOSFET 20V 16A DFN2020-6L-E
товар відсутній
YJQ30N03A |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 30A DFN3333-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (3.3x3.3)
Part Status: Active
Description: N-CH MOSFET 30V 30A DFN3333-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (3.3x3.3)
Part Status: Active
товар відсутній
YJQ30N03A |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 30A DFN3333-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (3.3x3.3)
Part Status: Active
Description: N-CH MOSFET 30V 30A DFN3333-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (3.3x3.3)
Part Status: Active
товар відсутній
YJQ3400A-F1-1100HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 7.7A DFN2020-6L-
Description: N-CH MOSFET 30V 7.7A DFN2020-6L-
товар відсутній
YJQ3400A-F1-1100HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 7.7A DFN2020-6L-
Description: N-CH MOSFET 30V 7.7A DFN2020-6L-
товар відсутній
YJQ35N04A-F1-1100HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 40V 35A DFN3333-8L
Description: N-CH MOSFET 40V 35A DFN3333-8L
товар відсутній
YJQ35N04A-F1-1100HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 40V 35A DFN3333-8L
Description: N-CH MOSFET 40V 35A DFN3333-8L
товар відсутній
YJQ3622A-F1-1100HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 30A DFN3333-8L
Description: N-CH MOSFET 30V 30A DFN3333-8L
товар відсутній
YJQ3622A-F1-1100HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 30A DFN3333-8L
Description: N-CH MOSFET 30V 30A DFN3333-8L
товар відсутній
YJQ40G10A-F1-1100HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 40A DFN3333-8L-
Description: N-CH MOSFET 100V 40A DFN3333-8L-
товар відсутній
YJQ40G10A-F1-1100HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 100V 40A DFN3333-8L-
Description: N-CH MOSFET 100V 40A DFN3333-8L-
товар відсутній
YJQ40P03A |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 40A DFN3333-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 20V
Power Dissipation (Max): 32W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2152 pF @ 15 V
Description: P-CH MOSFET 30V 40A DFN3333-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 20V
Power Dissipation (Max): 32W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2152 pF @ 15 V
товар відсутній
YJQ40P03A |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 40A DFN3333-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 20V
Power Dissipation (Max): 32W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2152 pF @ 15 V
Description: P-CH MOSFET 30V 40A DFN3333-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 20V
Power Dissipation (Max): 32W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2152 pF @ 15 V
товар відсутній
YJQ40P03A-F1-1100HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 40A DFN3333-8L
Description: P-CH MOSFET 30V 40A DFN3333-8L
товар відсутній
YJQ40P03A-F1-1100HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 30V 40A DFN3333-8L
Description: P-CH MOSFET 30V 40A DFN3333-8L
товар відсутній
YJQ4666B-F1-1100HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 16V 7A DFN2020-6L-C-
Description: P-CH MOSFET 16V 7A DFN2020-6L-C-
товар відсутній
YJQ4666B-F1-1100HF |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 16V 7A DFN2020-6L-C-
Description: P-CH MOSFET 16V 7A DFN2020-6L-C-
товар відсутній
YJQ50N03B |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 50A DFN3333-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (3.3x3.3)
Part Status: Active
Description: N-CH MOSFET 30V 50A DFN3333-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (3.3x3.3)
Part Status: Active
товар відсутній
YJQ50N03B |
Виробник: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 50A DFN3333-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (3.3x3.3)
Part Status: Active
Description: N-CH MOSFET 30V 50A DFN3333-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (3.3x3.3)
Part Status: Active
товар відсутній