| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CRCW040249R9FKED | VISHAY |
 Category: SMD resistorsDescription: Resistor: thick film; SMD; 0402; 49.9Ω; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 49.9Ω Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
товар відсутній |
|||||||||||||
 |
CRCW080549R9FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 49.9Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
товар відсутній |
|||||||||||||
|
|
CRCW080549R9FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 49.9Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 11599 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
CRCW120649R9FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 49.9Ω; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 49.9Ω Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 8000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
CRCW251249R9FKEG | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 49.9Ω; 1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 49.9Ω Power: 1W Tolerance: ±1% Max. operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
товар відсутній |
|||||||||||||
 |
VS-VSKT56/12 | VISHAY |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 60A; ADD-A-Pak; Igt: 150mA Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 60A Case: ADD-A-Pak Max. forward voltage: 1.7V Threshold on-voltage: 0.91V Max. forward impulse current: 1.2kA Gate current: 150mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| SI4447DY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.5A; Idm: -30A Kind of package: reel; tape Mounting: SMD Pulsed drain current: -30A Power dissipation: 2W Gate charge: 14nC Polarisation: unipolar Technology: TrenchFET® Drain current: -4.5A Kind of channel: enhanced Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±16V Case: SO8 On-state resistance: 72mΩ |
товар відсутній |
||||||||||||||
| VBPW34FASR | VISHAY |
Category: Photodiodes Description: PIN photodiode; Gull wing; SMD; 950nm; 780÷1050nm; 130°; flat Type of photoelement: PIN photodiode Case: Gull wing Mounting: SMD Wavelength of peak sensitivity: 950nm Wavelength: 780...1050nm Viewing angle: 130° Active area: 7.5mm2 Front: flat LED lens: black Dimensions: 6.4x3.9x1.2mm LED version: reverse mount Operating temperature: -40...100°C |
товар відсутній |
||||||||||||||
| VBPW34SR | VISHAY |
Category: Photodiodes Description: PIN photodiode; Gull wing; SMD; 940nm; 430÷1100nm; 130°; flat Type of photoelement: PIN photodiode Case: Gull wing Mounting: SMD Wavelength of peak sensitivity: 940nm Wavelength: 430...1100nm Viewing angle: 130° Active area: 7.5mm2 Front: flat Dimensions: 6.4x3.9x1.2mm LED version: reverse mount Operating temperature: -40...100°C |
товар відсутній |
||||||||||||||
 |
WKO221MCPCF0KR | VISHAY |
Category: THT ceramic capacitors Description: Capacitor: ceramic; suppression capacitor,X1,Y2; 220pF; Y5T; ±20% Type of capacitor: ceramic Kind of capacitor: suppression capacitor; X1; Y2 Capacitance: 220pF Dielectric: Y5T Tolerance: ±20% Mounting: THT Terminal pitch: 7.5mm Operating voltage X class: 440V AC Operating voltage Y class: 300V AC |
товар відсутній |
|||||||||||||
 |
WKO222MCPCJ0KR | VISHAY |
Category: THT ceramic capacitors Description: Capacitor: ceramic; suppression capacitor,X1,Y2; 2.2nF; Y5U; ±20% Type of capacitor: ceramic Kind of capacitor: suppression capacitor; X1; Y2 Capacitance: 2.2nF Dielectric: Y5U Tolerance: ±20% Mounting: THT Terminal pitch: 7.5mm Operating voltage X class: 440V AC Operating voltage Y class: 300V AC |
на замовлення 2437 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
GBU4D-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товар відсутній |
|||||||||||||
|
|
GBU4D-E3/51 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: in-tray Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товар відсутній |
|||||||||||||
 |
MBB02070C1623FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 162kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 162kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
товар відсутній |
|||||||||||||
 |
VJ0402Y103KXJCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 10nF; 16V; X7R; ±10%; SMD; 0402 Type of capacitor: ceramic Capacitance: 10nF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
VJ0603Y103KXJCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 10nF; 16V; X7R; ±10%; SMD; 0603 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 10nF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
на замовлення 10900 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
CRCW12063K01FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 3.01kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 3.01kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 5600 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
RCA0603680KFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 680kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 680kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC Q200 |
товар відсутній |
|||||||||||||
 |
TSHG6410 | VISHAY |
Category: IR LEDs Description: IR transmitter; 5mm; 875nm; transparent; 65mW; 12°; THT Type of diode: IR transmitter LED diameter: 5mm Wavelength: 875nm LED lens: transparent Optical power: 65mW Viewing angle: 12° Mounting: THT |
на замовлення 3404 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
VS-16FL100S05 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1kV; 16A; cathode to stud; DO203AA,DO4; 1.5V Manufacturer series: VS-16FL(R) Max. forward impulse current: 180A Reverse recovery time: 0.5µs Semiconductor structure: cathode to stud Load current: 16A Max. forward voltage: 1.5V Kind of package: bulk Max. load current: 25A Type of diode: rectifying Max. off-state voltage: 1kV Fastening thread: 10-32UNF-2A Case: DO4; DO203AA Features of semiconductor devices: fast switching Mounting: screw type |
на замовлення 97 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| VS-240U100D | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1kV; 1.33V; 320A; cathode to stud; DO205AB; bulk Type of diode: rectifying Max. off-state voltage: 1kV Max. forward voltage: 1.33V Load current: 320A Max. load current: 500A Semiconductor structure: cathode to stud Case: DO205AB Fastening thread: 3/4"-16UNF-2A Mounting: screw type Max. forward impulse current: 4.5kA Kind of package: bulk |
товар відсутній |
||||||||||||||
| VS-240UR100D | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1kV; 1.33V; 320A; anode to stud; DO205AB; bulk Type of diode: rectifying Max. off-state voltage: 1kV Max. forward voltage: 1.33V Load current: 320A Max. load current: 500A Semiconductor structure: anode to stud Case: DO205AB Fastening thread: 3/4"-16UNF-2A Mounting: screw type Max. forward impulse current: 4.5kA Kind of package: bulk |
товар відсутній |
||||||||||||||
 |
VS-70HF100 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1kV; 70A; cathode to stud; DO203AB,DO5; 1.35V Case: DO5; DO203AB Mounting: screw type Manufacturer series: VS-7xHF(R) Fastening thread: 1/4"-28UNF-2A Max. off-state voltage: 1kV Max. load current: 110A Max. forward voltage: 1.35V Load current: 70A Semiconductor structure: cathode to stud Max. forward impulse current: 1kA Kind of package: bulk Type of diode: rectifying |
на замовлення 129 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
VS-70HFR100 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1kV; 70A; anode to stud; DO203AB,DO5; 1.35V Case: DO5; DO203AB Mounting: screw type Manufacturer series: VS-7xHF(R) Fastening thread: 1/4"-28UNF-2A Max. off-state voltage: 1kV Max. load current: 110A Max. forward voltage: 1.35V Load current: 70A Semiconductor structure: anode to stud Max. forward impulse current: 1kA Kind of package: bulk Type of diode: rectifying |
на замовлення 72 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| VS-85HFR100 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1kV; 85A; anode to stud; DO203AB,DO5; 1.2V; bulk Type of diode: rectifying Semiconductor structure: anode to stud Max. off-state voltage: 1kV Load current: 85A Case: DO5; DO203AB Max. forward voltage: 1.2V Max. forward impulse current: 1.45kA Mounting: screw type Max. load current: 133A Kind of package: bulk Manufacturer series: VS-8xHF(R) Fastening thread: 1/4"-28UNF-2A |
товар відсутній |
||||||||||||||
|
|
CRCW12061K24FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 1.24kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 1.24kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 1300 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
CRCW12061K27FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 1.27kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 1.27kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| 4N25-X009T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Mounting: SMD Insulation voltage: 5.3kV Manufacturer series: 4N25 Type of optocoupler: optocoupler Case: SMD6 Max. off-state voltage: 6V Collector-emitter voltage: 70V Turn-on time: 2µs Turn-off time: 2µs Number of channels: 1 Kind of output: transistor CTR@If: 50%@10mA Conform to the norm: UL |
товар відсутній |
||||||||||||||
| SIHP052N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 148A Power dissipation: 278W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 52mΩ Mounting: THT Gate charge: 101nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| SIHP120N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 66A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| SIHP186N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 43A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 43A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 193mΩ Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| SIHP24N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Pulsed drain current: 51A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 89nC Kind of package: tube Kind of channel: enhanced |
на замовлення 968 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||
 |
SIHP24N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 46A; 208W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 20A Pulsed drain current: 46A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.195Ω Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced |
на замовлення 477 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| SIR5102DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 110A; Idm: 300A Drain-source voltage: 100V Drain current: 110A On-state resistance: 5.6mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: reel; tape Gate charge: 51nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A Mounting: SMD Case: PowerPAK® SO8 |
товар відсутній |
||||||||||||||
| SIR510DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A Drain-source voltage: 100V Drain current: 126A On-state resistance: 4.2mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: reel; tape Gate charge: 81nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A Mounting: SMD Case: PowerPAK® SO8 |
товар відсутній |
||||||||||||||
| SIHA2N80E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 29W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Drain-source voltage: 800V Drain current: 1.8A On-state resistance: 2.75Ω Type of transistor: N-MOSFET Power dissipation: 29W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 5A Gate charge: 19.6nC |
товар відсутній |
||||||||||||||
 |
SIHD2N80AE-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.8A Pulsed drain current: 3.6A Power dissipation: 62.5W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 10.5nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| SIHD2N80E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 800V Drain current: 1.8A On-state resistance: 2.75Ω Type of transistor: N-MOSFET Power dissipation: 62.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 5A Gate charge: 19.6nC |
товар відсутній |
||||||||||||||
 |
SA18A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 20÷22.1V; 17.1A; unidirectional; DO15; Ammo Pack Kind of package: Ammo Pack Type of diode: TVS Features of semiconductor devices: glass passivated Technology: TransZorb® Peak pulse power dissipation: 0.5kW Mounting: THT Case: DO15 Max. off-state voltage: 18V Semiconductor structure: unidirectional Max. forward impulse current: 17.1A Breakdown voltage: 20...22.1V Leakage current: 1µA |
товар відсутній |
|||||||||||||
|
|
SA30A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 33.3÷36.8V; 10A; unidirectional; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 10A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.5kW Kind of package: Ammo Pack Features of semiconductor devices: glass passivated Technology: TransZorb® |
товар відсутній |
|||||||||||||
|
|
SA33A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 36.7÷40.6V; 9.4A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 9.4A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 33V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 36.7...40.6V |
товар відсутній |
|||||||||||||
|
|
SA36A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 40÷44.2V; 8.6A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 8.6A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 36V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 40...44.2V |
товар відсутній |
|||||||||||||
|
|
SA43A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 47.8÷52.8V; 7.2A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 7.2A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 43V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 47.8...52.8V |
товар відсутній |
|||||||||||||
|
|
SA45A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 50÷55.3V; 6.9A; unidirectional; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 45V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Features of semiconductor devices: glass passivated Max. forward impulse current: 6.9A Kind of package: Ammo Pack Leakage current: 1µA Technology: TransZorb® Peak pulse power dissipation: 0.5kW Breakdown voltage: 50...55.3V |
товар відсутній |
|||||||||||||
|
|
SA48A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 53.3÷58.9V; 6.5A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 6.5A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 48V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 53.3...58.9V |
товар відсутній |
|||||||||||||
|
|
SA51A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 56.7÷62.7V; 6.1A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 6.1A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 51V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 56.7...62.7V |
товар відсутній |
|||||||||||||
|
|
SA54A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 60÷66.3V; 5.7A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 5.7A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 54V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 60...66.3V |
товар відсутній |
|||||||||||||
|
|
SA58A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 64.4÷71.2V; 5.3A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 5.3A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 58V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 64.4...71.2V |
товар відсутній |
|||||||||||||
|
|
SA70A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 77.8÷86V; 4.4A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 4.4A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 70V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 77.8...86V |
товар відсутній |
|||||||||||||
|
|
SA75A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 83.3÷92.1V; 4.1A; unidirectional; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 75V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Features of semiconductor devices: glass passivated Max. forward impulse current: 4.1A Kind of package: Ammo Pack Leakage current: 1µA Technology: TransZorb® Peak pulse power dissipation: 0.5kW Breakdown voltage: 83.3...92.1V |
товар відсутній |
|||||||||||||
|
|
SA78A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 86.7÷95.8V; 4A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 4A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 78V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 86.7...95.8V |
товар відсутній |
|||||||||||||
|
|
SA85A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 94.4÷104V; 3.6A; unidirectional; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 85V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Features of semiconductor devices: glass passivated Max. forward impulse current: 3.6A Kind of package: Ammo Pack Leakage current: 1µA Technology: TransZorb® Peak pulse power dissipation: 0.5kW Breakdown voltage: 94.4...104V |
товар відсутній |
|||||||||||||
|
|
SA90A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 100÷111V; 3.4A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 3.4A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 90V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 100...111V |
товар відсутній |
|||||||||||||
|
|
SA7.0A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 7.78÷8.6V; 41.7A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 41.7A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 7V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 0.15mA Case: DO15 Type of diode: TVS Breakdown voltage: 7.78...8.6V |
товар відсутній |
|||||||||||||
|
|
SA8.0A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 8.89÷9.83V; 36.8A; unidirectional; DO15 Mounting: THT Max. forward impulse current: 36.8A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 8V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 25µA Case: DO15 Type of diode: TVS Breakdown voltage: 8.89...9.83V |
товар відсутній |
|||||||||||||
|
|
SA8.5A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 9.44÷10.4V; 34.7A; unidirectional; DO15 Mounting: THT Max. forward impulse current: 34.7A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 8.5V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 10µA Case: DO15 Type of diode: TVS Breakdown voltage: 9.44...10.4V |
товар відсутній |
|||||||||||||
|
|
SA9.0A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 10÷11.1V; 32.5A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 32.5A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 9V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 5µA Case: DO15 Type of diode: TVS Breakdown voltage: 10...11.1V |
товар відсутній |
|||||||||||||
|
|
P6KE7.5A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 600W; 7.5V; 53.1A; unidirectional; DO15; Ammo Pack; P6KE Type of diode: TVS Max. off-state voltage: 6.4V Breakdown voltage: 7.5V Max. forward impulse current: 53.1A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 0.5mA Peak pulse power dissipation: 0.6kW Kind of package: Ammo Pack Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6KE |
на замовлення 943 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
SA90CA-E3/73 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 100÷111V; 3.4A; bidirectional; DO15; 500W; Ammo Pack Mounting: THT Max. forward impulse current: 3.4A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 90V Kind of package: Ammo Pack Semiconductor structure: bidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 100...111V |
товар відсутній |
|||||||||||||
|
|
SA30CA-E3/73 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 33.3÷36.8V; 10A; bidirectional; DO15; 500W; Ammo Pack Type of diode: TVS Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 10A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.5kW Kind of package: Ammo Pack Features of semiconductor devices: glass passivated Technology: TransZorb® |
товар відсутній |
| CRCW040249R9FKED |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 49.9Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 49.9Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 49.9Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 49.9Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
товар відсутній
| CRCW080549R9FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 49.9Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 49.9Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
товар відсутній
| CRCW080549R9FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 49.9Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 49.9Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 11599 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.93 грн |
| 500+ | 0.95 грн |
| 1000+ | 0.58 грн |
| 4100+ | 0.22 грн |
| 5000+ | 0.2 грн |
| CRCW120649R9FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 49.9Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 49.9Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 49.9Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 49.9Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.39 грн |
| 500+ | 1.3 грн |
| 1000+ | 0.83 грн |
| 2300+ | 0.39 грн |
| 5000+ | 0.35 грн |
| CRCW251249R9FKEG |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 49.9Ω; 1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 49.9Ω
Power: 1W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 49.9Ω; 1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 49.9Ω
Power: 1W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
товар відсутній
| VS-VSKT56/12 |
|
Виробник: VISHAY
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; ADD-A-Pak; Igt: 150mA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: ADD-A-Pak
Max. forward voltage: 1.7V
Threshold on-voltage: 0.91V
Max. forward impulse current: 1.2kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; ADD-A-Pak; Igt: 150mA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: ADD-A-Pak
Max. forward voltage: 1.7V
Threshold on-voltage: 0.91V
Max. forward impulse current: 1.2kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1938.48 грн |
| 2+ | 1701.9 грн |
| SI4447DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.5A; Idm: -30A
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -30A
Power dissipation: 2W
Gate charge: 14nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -4.5A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±16V
Case: SO8
On-state resistance: 72mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.5A; Idm: -30A
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -30A
Power dissipation: 2W
Gate charge: 14nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -4.5A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±16V
Case: SO8
On-state resistance: 72mΩ
товар відсутній
| VBPW34FASR |
|
Виробник: VISHAY
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 950nm; 780÷1050nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 780...1050nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
LED lens: black
Dimensions: 6.4x3.9x1.2mm
LED version: reverse mount
Operating temperature: -40...100°C
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 950nm; 780÷1050nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 780...1050nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
LED lens: black
Dimensions: 6.4x3.9x1.2mm
LED version: reverse mount
Operating temperature: -40...100°C
товар відсутній
| VBPW34SR |
|
Виробник: VISHAY
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 940nm; 430÷1100nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 430...1100nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
LED version: reverse mount
Operating temperature: -40...100°C
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 940nm; 430÷1100nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 430...1100nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
LED version: reverse mount
Operating temperature: -40...100°C
товар відсутній
| WKO221MCPCF0KR |
|
Виробник: VISHAY
Category: THT ceramic capacitors
Description: Capacitor: ceramic; suppression capacitor,X1,Y2; 220pF; Y5T; ±20%
Type of capacitor: ceramic
Kind of capacitor: suppression capacitor; X1; Y2
Capacitance: 220pF
Dielectric: Y5T
Tolerance: ±20%
Mounting: THT
Terminal pitch: 7.5mm
Operating voltage X class: 440V AC
Operating voltage Y class: 300V AC
Category: THT ceramic capacitors
Description: Capacitor: ceramic; suppression capacitor,X1,Y2; 220pF; Y5T; ±20%
Type of capacitor: ceramic
Kind of capacitor: suppression capacitor; X1; Y2
Capacitance: 220pF
Dielectric: Y5T
Tolerance: ±20%
Mounting: THT
Terminal pitch: 7.5mm
Operating voltage X class: 440V AC
Operating voltage Y class: 300V AC
товар відсутній
| WKO222MCPCJ0KR |
|
Виробник: VISHAY
Category: THT ceramic capacitors
Description: Capacitor: ceramic; suppression capacitor,X1,Y2; 2.2nF; Y5U; ±20%
Type of capacitor: ceramic
Kind of capacitor: suppression capacitor; X1; Y2
Capacitance: 2.2nF
Dielectric: Y5U
Tolerance: ±20%
Mounting: THT
Terminal pitch: 7.5mm
Operating voltage X class: 440V AC
Operating voltage Y class: 300V AC
Category: THT ceramic capacitors
Description: Capacitor: ceramic; suppression capacitor,X1,Y2; 2.2nF; Y5U; ±20%
Type of capacitor: ceramic
Kind of capacitor: suppression capacitor; X1; Y2
Capacitance: 2.2nF
Dielectric: Y5U
Tolerance: ±20%
Mounting: THT
Terminal pitch: 7.5mm
Operating voltage X class: 440V AC
Operating voltage Y class: 300V AC
на замовлення 2437 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 20.97 грн |
| 25+ | 15.85 грн |
| 71+ | 12.45 грн |
| 194+ | 11.85 грн |
| GBU4D-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товар відсутній
| GBU4D-E3/51 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товар відсутній
| MBB02070C1623FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 162kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 162kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 162kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 162kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
товар відсутній
| VJ0402Y103KXJCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 16V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 16V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 0.13 грн |
| VJ0603Y103KXJCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10nF; 16V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 10nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10nF; 16V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 10nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
на замовлення 10900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 481+ | 0.85 грн |
| 705+ | 0.54 грн |
| 1107+ | 0.34 грн |
| 2825+ | 0.31 грн |
| 4000+ | 0.29 грн |
| CRCW12063K01FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3.01kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3.01kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3.01kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3.01kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 5600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.39 грн |
| 500+ | 1.3 грн |
| 1000+ | 0.83 грн |
| 2300+ | 0.38 грн |
| 5000+ | 0.35 грн |
| RCA0603680KFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 680kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 680kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 680kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 680kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
товар відсутній
| TSHG6410 |
|
Виробник: VISHAY
Category: IR LEDs
Description: IR transmitter; 5mm; 875nm; transparent; 65mW; 12°; THT
Type of diode: IR transmitter
LED diameter: 5mm
Wavelength: 875nm
LED lens: transparent
Optical power: 65mW
Viewing angle: 12°
Mounting: THT
Category: IR LEDs
Description: IR transmitter; 5mm; 875nm; transparent; 65mW; 12°; THT
Type of diode: IR transmitter
LED diameter: 5mm
Wavelength: 875nm
LED lens: transparent
Optical power: 65mW
Viewing angle: 12°
Mounting: THT
на замовлення 3404 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.02 грн |
| 13+ | 30.64 грн |
| 25+ | 20.53 грн |
| 75+ | 11.77 грн |
| 205+ | 11.09 грн |
| VS-16FL100S05 |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 16A; cathode to stud; DO203AA,DO4; 1.5V
Manufacturer series: VS-16FL(R)
Max. forward impulse current: 180A
Reverse recovery time: 0.5µs
Semiconductor structure: cathode to stud
Load current: 16A
Max. forward voltage: 1.5V
Kind of package: bulk
Max. load current: 25A
Type of diode: rectifying
Max. off-state voltage: 1kV
Fastening thread: 10-32UNF-2A
Case: DO4; DO203AA
Features of semiconductor devices: fast switching
Mounting: screw type
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 16A; cathode to stud; DO203AA,DO4; 1.5V
Manufacturer series: VS-16FL(R)
Max. forward impulse current: 180A
Reverse recovery time: 0.5µs
Semiconductor structure: cathode to stud
Load current: 16A
Max. forward voltage: 1.5V
Kind of package: bulk
Max. load current: 25A
Type of diode: rectifying
Max. off-state voltage: 1kV
Fastening thread: 10-32UNF-2A
Case: DO4; DO203AA
Features of semiconductor devices: fast switching
Mounting: screw type
на замовлення 97 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 499.86 грн |
| 3+ | 320 грн |
| 8+ | 302.64 грн |
| VS-240U100D |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.33V; 320A; cathode to stud; DO205AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.33V
Load current: 320A
Max. load current: 500A
Semiconductor structure: cathode to stud
Case: DO205AB
Fastening thread: 3/4"-16UNF-2A
Mounting: screw type
Max. forward impulse current: 4.5kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.33V; 320A; cathode to stud; DO205AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.33V
Load current: 320A
Max. load current: 500A
Semiconductor structure: cathode to stud
Case: DO205AB
Fastening thread: 3/4"-16UNF-2A
Mounting: screw type
Max. forward impulse current: 4.5kA
Kind of package: bulk
товар відсутній
| VS-240UR100D |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.33V; 320A; anode to stud; DO205AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.33V
Load current: 320A
Max. load current: 500A
Semiconductor structure: anode to stud
Case: DO205AB
Fastening thread: 3/4"-16UNF-2A
Mounting: screw type
Max. forward impulse current: 4.5kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.33V; 320A; anode to stud; DO205AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.33V
Load current: 320A
Max. load current: 500A
Semiconductor structure: anode to stud
Case: DO205AB
Fastening thread: 3/4"-16UNF-2A
Mounting: screw type
Max. forward impulse current: 4.5kA
Kind of package: bulk
товар відсутній
| VS-70HF100 |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 70A; cathode to stud; DO203AB,DO5; 1.35V
Case: DO5; DO203AB
Mounting: screw type
Manufacturer series: VS-7xHF(R)
Fastening thread: 1/4"-28UNF-2A
Max. off-state voltage: 1kV
Max. load current: 110A
Max. forward voltage: 1.35V
Load current: 70A
Semiconductor structure: cathode to stud
Max. forward impulse current: 1kA
Kind of package: bulk
Type of diode: rectifying
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 70A; cathode to stud; DO203AB,DO5; 1.35V
Case: DO5; DO203AB
Mounting: screw type
Manufacturer series: VS-7xHF(R)
Fastening thread: 1/4"-28UNF-2A
Max. off-state voltage: 1kV
Max. load current: 110A
Max. forward voltage: 1.35V
Load current: 70A
Semiconductor structure: cathode to stud
Max. forward impulse current: 1kA
Kind of package: bulk
Type of diode: rectifying
на замовлення 129 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 733.13 грн |
| 3+ | 434.72 грн |
| 6+ | 411.32 грн |
| VS-70HFR100 |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 70A; anode to stud; DO203AB,DO5; 1.35V
Case: DO5; DO203AB
Mounting: screw type
Manufacturer series: VS-7xHF(R)
Fastening thread: 1/4"-28UNF-2A
Max. off-state voltage: 1kV
Max. load current: 110A
Max. forward voltage: 1.35V
Load current: 70A
Semiconductor structure: anode to stud
Max. forward impulse current: 1kA
Kind of package: bulk
Type of diode: rectifying
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 70A; anode to stud; DO203AB,DO5; 1.35V
Case: DO5; DO203AB
Mounting: screw type
Manufacturer series: VS-7xHF(R)
Fastening thread: 1/4"-28UNF-2A
Max. off-state voltage: 1kV
Max. load current: 110A
Max. forward voltage: 1.35V
Load current: 70A
Semiconductor structure: anode to stud
Max. forward impulse current: 1kA
Kind of package: bulk
Type of diode: rectifying
на замовлення 72 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 609.58 грн |
| 3+ | 409.81 грн |
| 6+ | 387.93 грн |
| VS-85HFR100 |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 85A; anode to stud; DO203AB,DO5; 1.2V; bulk
Type of diode: rectifying
Semiconductor structure: anode to stud
Max. off-state voltage: 1kV
Load current: 85A
Case: DO5; DO203AB
Max. forward voltage: 1.2V
Max. forward impulse current: 1.45kA
Mounting: screw type
Max. load current: 133A
Kind of package: bulk
Manufacturer series: VS-8xHF(R)
Fastening thread: 1/4"-28UNF-2A
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 85A; anode to stud; DO203AB,DO5; 1.2V; bulk
Type of diode: rectifying
Semiconductor structure: anode to stud
Max. off-state voltage: 1kV
Load current: 85A
Case: DO5; DO203AB
Max. forward voltage: 1.2V
Max. forward impulse current: 1.45kA
Mounting: screw type
Max. load current: 133A
Kind of package: bulk
Manufacturer series: VS-8xHF(R)
Fastening thread: 1/4"-28UNF-2A
товар відсутній
| CRCW12061K24FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.24kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1.24kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.24kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1.24kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 1300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.39 грн |
| 500+ | 1.3 грн |
| 1000+ | 0.83 грн |
| CRCW12061K27FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.27kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1.27kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.27kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1.27kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.06 грн |
| 4N25-X009T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Mounting: SMD
Insulation voltage: 5.3kV
Manufacturer series: 4N25
Type of optocoupler: optocoupler
Case: SMD6
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
Kind of output: transistor
CTR@If: 50%@10mA
Conform to the norm: UL
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Mounting: SMD
Insulation voltage: 5.3kV
Manufacturer series: 4N25
Type of optocoupler: optocoupler
Case: SMD6
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
Kind of output: transistor
CTR@If: 50%@10mA
Conform to the norm: UL
товар відсутній
| SIHP052N60EF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 148A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 101nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 148A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 101nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHP120N60E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 66A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 66A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHP186N60EF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 43A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 43A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 193mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 43A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 43A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 193mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHP24N80AE-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 51A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 51A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 968 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 225.95 грн |
| 5+ | 185.66 грн |
| 6+ | 167.55 грн |
| 15+ | 158.49 грн |
| 100+ | 155.47 грн |
| 500+ | 151.7 грн |
| SIHP24N80AEF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 46A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Pulsed drain current: 46A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 46A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Pulsed drain current: 46A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 477 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 277.97 грн |
| 3+ | 235.47 грн |
| 6+ | 162.27 грн |
| 15+ | 153.21 грн |
| SIR5102DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 110A; Idm: 300A
Drain-source voltage: 100V
Drain current: 110A
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 51nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Case: PowerPAK® SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 110A; Idm: 300A
Drain-source voltage: 100V
Drain current: 110A
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 51nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Case: PowerPAK® SO8
товар відсутній
| SIR510DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A
Drain-source voltage: 100V
Drain current: 126A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 81nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Case: PowerPAK® SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A
Drain-source voltage: 100V
Drain current: 126A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 81nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Case: PowerPAK® SO8
товар відсутній
| SIHA2N80E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 29W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 800V
Drain current: 1.8A
On-state resistance: 2.75Ω
Type of transistor: N-MOSFET
Power dissipation: 29W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 5A
Gate charge: 19.6nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 29W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 800V
Drain current: 1.8A
On-state resistance: 2.75Ω
Type of transistor: N-MOSFET
Power dissipation: 29W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 5A
Gate charge: 19.6nC
товар відсутній
| SIHD2N80AE-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.8A
Pulsed drain current: 3.6A
Power dissipation: 62.5W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.8A
Pulsed drain current: 3.6A
Power dissipation: 62.5W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 108.91 грн |
| 5+ | 91.32 грн |
| 12+ | 76.23 грн |
| SIHD2N80E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 800V
Drain current: 1.8A
On-state resistance: 2.75Ω
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 5A
Gate charge: 19.6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 800V
Drain current: 1.8A
On-state resistance: 2.75Ω
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 5A
Gate charge: 19.6nC
товар відсутній
| SA18A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 20÷22.1V; 17.1A; unidirectional; DO15; Ammo Pack
Kind of package: Ammo Pack
Type of diode: TVS
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Mounting: THT
Case: DO15
Max. off-state voltage: 18V
Semiconductor structure: unidirectional
Max. forward impulse current: 17.1A
Breakdown voltage: 20...22.1V
Leakage current: 1µA
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 20÷22.1V; 17.1A; unidirectional; DO15; Ammo Pack
Kind of package: Ammo Pack
Type of diode: TVS
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Mounting: THT
Case: DO15
Max. off-state voltage: 18V
Semiconductor structure: unidirectional
Max. forward impulse current: 17.1A
Breakdown voltage: 20...22.1V
Leakage current: 1µA
товар відсутній
| SA30A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 33.3÷36.8V; 10A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 10A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 33.3÷36.8V; 10A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 10A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
товар відсутній
| SA33A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 36.7÷40.6V; 9.4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 9.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 33V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 36.7...40.6V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 36.7÷40.6V; 9.4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 9.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 33V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 36.7...40.6V
товар відсутній
| SA36A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 40÷44.2V; 8.6A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 8.6A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 36V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 40...44.2V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 40÷44.2V; 8.6A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 8.6A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 36V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 40...44.2V
товар відсутній
| SA43A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 47.8÷52.8V; 7.2A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 7.2A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 43V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 47.8...52.8V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 47.8÷52.8V; 7.2A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 7.2A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 43V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 47.8...52.8V
товар відсутній
| SA45A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 50÷55.3V; 6.9A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 45V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Features of semiconductor devices: glass passivated
Max. forward impulse current: 6.9A
Kind of package: Ammo Pack
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Breakdown voltage: 50...55.3V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 50÷55.3V; 6.9A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 45V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Features of semiconductor devices: glass passivated
Max. forward impulse current: 6.9A
Kind of package: Ammo Pack
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Breakdown voltage: 50...55.3V
товар відсутній
| SA48A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 53.3÷58.9V; 6.5A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 6.5A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 48V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 53.3...58.9V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 53.3÷58.9V; 6.5A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 6.5A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 48V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 53.3...58.9V
товар відсутній
| SA51A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 56.7÷62.7V; 6.1A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 6.1A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 51V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 56.7...62.7V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 56.7÷62.7V; 6.1A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 6.1A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 51V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 56.7...62.7V
товар відсутній
| SA54A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 60÷66.3V; 5.7A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 5.7A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 54V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 60...66.3V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 60÷66.3V; 5.7A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 5.7A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 54V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 60...66.3V
товар відсутній
| SA58A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 64.4÷71.2V; 5.3A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 5.3A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 58V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 64.4...71.2V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 64.4÷71.2V; 5.3A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 5.3A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 58V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 64.4...71.2V
товар відсутній
| SA70A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 77.8÷86V; 4.4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 4.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 70V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 77.8...86V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 77.8÷86V; 4.4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 4.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 70V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 77.8...86V
товар відсутній
| SA75A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 83.3÷92.1V; 4.1A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 75V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Features of semiconductor devices: glass passivated
Max. forward impulse current: 4.1A
Kind of package: Ammo Pack
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Breakdown voltage: 83.3...92.1V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 83.3÷92.1V; 4.1A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 75V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Features of semiconductor devices: glass passivated
Max. forward impulse current: 4.1A
Kind of package: Ammo Pack
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Breakdown voltage: 83.3...92.1V
товар відсутній
| SA78A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 86.7÷95.8V; 4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 78V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 86.7...95.8V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 86.7÷95.8V; 4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 78V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 86.7...95.8V
товар відсутній
| SA85A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 94.4÷104V; 3.6A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 85V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Features of semiconductor devices: glass passivated
Max. forward impulse current: 3.6A
Kind of package: Ammo Pack
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Breakdown voltage: 94.4...104V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 94.4÷104V; 3.6A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 85V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Features of semiconductor devices: glass passivated
Max. forward impulse current: 3.6A
Kind of package: Ammo Pack
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Breakdown voltage: 94.4...104V
товар відсутній
| SA90A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 100÷111V; 3.4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 3.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 90V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 100...111V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 100÷111V; 3.4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 3.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 90V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 100...111V
товар відсутній
| SA7.0A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 7.78÷8.6V; 41.7A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 41.7A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 7V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 0.15mA
Case: DO15
Type of diode: TVS
Breakdown voltage: 7.78...8.6V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 7.78÷8.6V; 41.7A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 41.7A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 7V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 0.15mA
Case: DO15
Type of diode: TVS
Breakdown voltage: 7.78...8.6V
товар відсутній
| SA8.0A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 8.89÷9.83V; 36.8A; unidirectional; DO15
Mounting: THT
Max. forward impulse current: 36.8A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 8V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 25µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 8.89...9.83V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 8.89÷9.83V; 36.8A; unidirectional; DO15
Mounting: THT
Max. forward impulse current: 36.8A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 8V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 25µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 8.89...9.83V
товар відсутній
| SA8.5A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 9.44÷10.4V; 34.7A; unidirectional; DO15
Mounting: THT
Max. forward impulse current: 34.7A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 8.5V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 10µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 9.44...10.4V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 9.44÷10.4V; 34.7A; unidirectional; DO15
Mounting: THT
Max. forward impulse current: 34.7A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 8.5V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 10µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 9.44...10.4V
товар відсутній
| SA9.0A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 10÷11.1V; 32.5A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 32.5A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 9V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 10...11.1V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 10÷11.1V; 32.5A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 32.5A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 9V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 10...11.1V
товар відсутній
| P6KE7.5A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 600W; 7.5V; 53.1A; unidirectional; DO15; Ammo Pack; P6KE
Type of diode: TVS
Max. off-state voltage: 6.4V
Breakdown voltage: 7.5V
Max. forward impulse current: 53.1A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.5mA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6KE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 600W; 7.5V; 53.1A; unidirectional; DO15; Ammo Pack; P6KE
Type of diode: TVS
Max. off-state voltage: 6.4V
Breakdown voltage: 7.5V
Max. forward impulse current: 53.1A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.5mA
Peak pulse power dissipation: 0.6kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6KE
на замовлення 943 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 25.2 грн |
| 30+ | 12.68 грн |
| 92+ | 9.66 грн |
| 252+ | 9.13 грн |
| SA90CA-E3/73 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 100÷111V; 3.4A; bidirectional; DO15; 500W; Ammo Pack
Mounting: THT
Max. forward impulse current: 3.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 90V
Kind of package: Ammo Pack
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 100...111V
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 100÷111V; 3.4A; bidirectional; DO15; 500W; Ammo Pack
Mounting: THT
Max. forward impulse current: 3.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 90V
Kind of package: Ammo Pack
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 100...111V
товар відсутній
| SA30CA-E3/73 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 33.3÷36.8V; 10A; bidirectional; DO15; 500W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 10A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 33.3÷36.8V; 10A; bidirectional; DO15; 500W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 10A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
товар відсутній