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SIHA2N80E-GE3 Vishay Siliconix
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Description: MOSFET N-CH 800V 2.8A TO220
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 111.76 грн |
10+ | 89.1 грн |
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Технічний опис SIHA2N80E-GE3 Vishay Siliconix
Description: MOSFET N-CH 800V 2.8A TO220, Packaging: Tape & Reel (TR), Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V, Power Dissipation (Max): 29W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V.
Інші пропозиції SIHA2N80E-GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SIHA2N80E-GE3 | Виробник : Vishay |
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товар відсутній |
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SIHA2N80E-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 29W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Drain-source voltage: 800V Drain current: 1.8A On-state resistance: 2.75Ω Type of transistor: N-MOSFET Power dissipation: 29W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 5A Gate charge: 19.6nC кількість в упаковці: 1 шт |
товар відсутній |
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SIHA2N80E-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V |
товар відсутній |
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SIHA2N80E-GE3 | Виробник : Vishay / Siliconix |
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товар відсутній |
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SIHA2N80E-GE3 | Виробник : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 29W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Drain-source voltage: 800V Drain current: 1.8A On-state resistance: 2.75Ω Type of transistor: N-MOSFET Power dissipation: 29W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 5A Gate charge: 19.6nC |
товар відсутній |