Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (37668) > Сторінка 356 з 628
Фото | Назва | Виробник | Інформація |
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1.5SMC24CAHE3/57T | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 45.2A Voltage - Reverse Standoff (Typ): 20.5V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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1.5SMC24CAHE3/9AT | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 45.2A Voltage - Reverse Standoff (Typ): 20.5V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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1.5SMC24CA-M3/57T | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 45.2A Voltage - Reverse Standoff (Typ): 20.5V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
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1.5SMC24CA-M3/9AT | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 45.2A Voltage - Reverse Standoff (Typ): 20.5V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
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1N4148W-HG3-08 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
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1N4148W-HG3-18 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
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1N6295AHE3_A/C | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 10.9A Voltage - Reverse Standoff (Typ): 85.5V Supplier Device Package: 1.5KE Unidirectional Channels: 1 Voltage - Breakdown (Min): 95V Voltage - Clamping (Max) @ Ipp: 137V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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1N6300AHE3_A/C | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 6.8A Voltage - Reverse Standoff (Typ): 136V Supplier Device Package: 1.5KE Unidirectional Channels: 1 Voltage - Breakdown (Min): 152V Voltage - Clamping (Max) @ Ipp: 219V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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BAV20WS-HG3-08 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
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BAV20WS-HG3-18 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V Grade: Automotive Qualification: AEC-Q101 |
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BYM11-1000HE3_A/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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BYM11-1000HE3_A/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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CS1M-E3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 6pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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DF08S-E3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DFS Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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EGF1AHE3_A/H | Vishay General Semiconductor - Diodes Division |
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EGF1AHE3_A/I | Vishay General Semiconductor - Diodes Division |
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EGF1DHE3_A/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
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EGF1DHE3_A/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
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EGL34AHE3_A/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
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EGL34AHE3_A/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
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EGL34GHE3_A/H | Vishay General Semiconductor - Diodes Division |
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EGL34GHE3_A/I | Vishay General Semiconductor - Diodes Division |
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EGL41AHE3_A/H | Vishay General Semiconductor - Diodes Division |
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GL34A-E3/83 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
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LVE2560-M3/P | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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MSS1P3LHM3_A/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 250 µA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
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MSS2P2HM3_A/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A Current - Reverse Leakage @ Vr: 250 µA @ 20 V Grade: Automotive Qualification: AEC-Q101 |
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MSS2P3HM3_A/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A Current - Reverse Leakage @ Vr: 250 µA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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P4SMA24CA-E3/5A | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 12A Voltage - Reverse Standoff (Typ): 20.5V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 400W Power Line Protection: No |
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P4SMA24CA-E3/61 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 12A Voltage - Reverse Standoff (Typ): 20.5V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 400W Power Line Protection: No |
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P4SMA24CA-M3/5A | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 12A Voltage - Reverse Standoff (Typ): 20.5V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 400W Power Line Protection: No |
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P4SMA24CA-M3/61 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 12A Voltage - Reverse Standoff (Typ): 20.5V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 400W Power Line Protection: No |
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P4SMA36A-M3/5A | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 30.8V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 34.2V Voltage - Clamping (Max) @ Ipp: 49.9V Power - Peak Pulse: 400W Power Line Protection: No |
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P4SMA36A-M3/61 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 30.8V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 34.2V Voltage - Clamping (Max) @ Ipp: 49.9V Power - Peak Pulse: 400W Power Line Protection: No |
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PLZ2V0A-G3/H | Vishay General Semiconductor - Diodes Division |
![]() Tolerance: ±5.53% Packaging: Tape & Reel (TR) Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 1.99 V Impedance (Max) (Zzt): 140 Ohms Supplier Device Package: DO-219AC (microSMF) Grade: Automotive Power - Max: 960 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 120 µA @ 500 mV Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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PLZ2V2A-G3/H | Vishay General Semiconductor - Diodes Division |
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на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
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PLZ2V4A-G3/H | Vishay General Semiconductor - Diodes Division |
![]() Tolerance: ±3.92% Packaging: Tape & Reel (TR) Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.43 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-219AC (microSMF) Power - Max: 960 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 120 µA @ 1 V |
на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
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PLZ2V7A-G3/H | Vishay General Semiconductor - Diodes Division |
![]() Tolerance: ±3.97% Packaging: Tape & Reel (TR) Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.65 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-219AC (microSMF) Power - Max: 960 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 µA @ 1 V |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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PLZ3V3A-G3/H | Vishay General Semiconductor - Diodes Division |
![]() Tolerance: ±3.36% Packaging: Tape & Reel (TR) Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.27 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: DO-219AC (microSMF) Power - Max: 960 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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PLZ3V3B-G3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Tolerance: ±3.07% Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.43 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: DO-219AC (microSMF) Power - Max: 960 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
на замовлення 31500 шт: термін постачання 21-31 дні (днів) |
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PLZ3V6A-G3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Tolerance: ±3.36% Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.58 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: DO-219AC (microSMF) Power - Max: 960 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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PLZ3V9A-G3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Tolerance: ±4.59% Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.92 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-219AC (microSMF) Power - Max: 960 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
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PLZ4V3A-G3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Tolerance: ±3% Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.17 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: DO-219AC (microSMF) Power - Max: 960 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
на замовлення 40500 шт: термін постачання 21-31 дні (днів) |
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PLZ4V7A-G3/H | Vishay General Semiconductor - Diodes Division |
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на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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PLZ5V1A-G3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Tolerance: ±2.63% Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.94 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-219AC (microSMF) Part Status: Active Power - Max: 960 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V |
товар відсутній |
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PLZ5V1C-G3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Tolerance: ±2.68% Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.23 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-219AC (microSMF) Power - Max: 960 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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PLZ5V6A-G3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Tolerance: ±2.49% Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.42 V Impedance (Max) (Zzt): 13 Ohms Supplier Device Package: DO-219AC (microSMF) Part Status: Active Power - Max: 960 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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PLZ6V2A-G3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Tolerance: ±2.61% Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.94 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-219AC (microSMF) Power - Max: 960 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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PLZ6V8A-G3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Tolerance: ±2.63% Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.46 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-219AC (microSMF) Part Status: Active Power - Max: 960 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V |
на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
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PLZ7V5A-G3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Tolerance: ±2.63% Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.04 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-219AC (microSMF) Power - Max: 960 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 4 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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PLZ8V2B-G3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Tolerance: ±2.57% Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.99 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-219AC (microSMF) Power - Max: 960 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 5 V |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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PLZ9V1A-G3/H | Vishay General Semiconductor - Diodes Division |
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на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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PLZ9V1C-G3/H | Vishay General Semiconductor - Diodes Division |
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на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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RGF1KHE3_A/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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RGF1MHE3_A/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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RGF1MHE3_A/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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S8CJ-M3/I | Vishay General Semiconductor - Diodes Division |
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на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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S8CM-M3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Standard Capacitance @ Vr, F: 79pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 10500 шт: термін постачання 21-31 дні (днів) |
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SL04-E3-08 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 1.1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1.1 A Current - Reverse Leakage @ Vr: 20 µA @ 40 V |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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SM5S24ATHE3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-218AC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 93A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: DO-218AC Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 3600W (3.6kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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1.5SMC24CAHE3/57T |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 45.2A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20.5VWM 33.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 45.2A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1.5SMC24CAHE3/9AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 45.2A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20.5VWM 33.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 45.2A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1.5SMC24CA-M3/57T |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45.2A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 20.5VWM 33.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45.2A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5SMC24CA-M3/9AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45.2A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 20.5VWM 33.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45.2A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1N4148W-HG3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 75V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1N4148W-HG3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 75V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1N6295AHE3_A/C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 85.5VWM 137VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 85.5VWM 137VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1N6300AHE3_A/C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 136VWM 219VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 136VWM 219VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BAV20WS-HG3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 150V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BAV20WS-HG3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 150V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BYM11-1000HE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
BYM11-1000HE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
CS1M-E3/H |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
DF08S-E3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 1A DFS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 1A DFS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
EGF1AHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO214BA
Description: DIODE GEN PURP 50V 1A DO214BA
товар відсутній
EGF1AHE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO214BA
Description: DIODE GEN PURP 50V 1A DO214BA
товар відсутній
EGF1DHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
товар відсутній
EGF1DHE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
товар відсутній
EGL34AHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 500MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 500MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
EGL34AHE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 500MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 500MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
EGL34GHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 500MA DO213
Description: DIODE GEN PURP 400V 500MA DO213
товар відсутній
EGL34GHE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 500MA DO213
Description: DIODE GEN PURP 400V 500MA DO213
товар відсутній
EGL41AHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Description: DIODE GEN PURP 50V 1A DO213AB
товар відсутній
GL34A-E3/83 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 500MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 500MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
LVE2560-M3/P |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Packaging: Tube
Package / Case: 4-SIP, GSIB-5S
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GSIB-5S
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
MSS1P3LHM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MSS2P2HM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 2A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 20V 2A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MSS2P3HM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 250 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 2A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 250 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4500+ | 4.84 грн |
9000+ | 3.85 грн |
P4SMA24CA-E3/5A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 20.5VWM 33.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4SMA24CA-E3/61 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 20.5VWM 33.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4SMA24CA-M3/5A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 20.5VWM 33.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4SMA24CA-M3/61 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 20.5VWM 33.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4SMA36A-M3/5A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4SMA36A-M3/61 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
PLZ2V0A-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 1.99V 960MW DO219AC
Tolerance: ±5.53%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 1.99 V
Impedance (Max) (Zzt): 140 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 120 µA @ 500 mV
Qualification: AEC-Q101
Description: DIODE ZENER 1.99V 960MW DO219AC
Tolerance: ±5.53%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 1.99 V
Impedance (Max) (Zzt): 140 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 120 µA @ 500 mV
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4500+ | 3.14 грн |
9000+ | 2.72 грн |
PLZ2V2A-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.21V 960MW DO219AC
Description: DIODE ZENER 2.21V 960MW DO219AC
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)PLZ2V4A-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.43V 960MW DO219AC
Tolerance: ±3.92%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.43 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 120 µA @ 1 V
Description: DIODE ZENER 2.43V 960MW DO219AC
Tolerance: ±3.92%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.43 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 120 µA @ 1 V
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4500+ | 3.29 грн |
9000+ | 2.44 грн |
PLZ2V7A-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.65V 960MW DO219AC
Tolerance: ±3.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.65 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Description: DIODE ZENER 2.65V 960MW DO219AC
Tolerance: ±3.97%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.65 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4500+ | 3.29 грн |
PLZ3V3A-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.27V 960MW DO219AC
Tolerance: ±3.36%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.27 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE ZENER 3.27V 960MW DO219AC
Tolerance: ±3.36%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.27 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4500+ | 3.29 грн |
9000+ | 2.44 грн |
PLZ3V3B-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.43V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±3.07%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.43 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE ZENER 3.43V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±3.07%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.43 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
на замовлення 31500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4500+ | 2.31 грн |
9000+ | 1.77 грн |
PLZ3V6A-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.58V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±3.36%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.58 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 3.58V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±3.36%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.58 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4500+ | 3.29 грн |
9000+ | 2.44 грн |
PLZ3V9A-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.92V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±4.59%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.92 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 3.92V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±4.59%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.92 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4500+ | 3.29 грн |
9000+ | 2.44 грн |
PLZ4V3A-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.17V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.17 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 4.17V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.17 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
на замовлення 40500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4500+ | 2.31 грн |
9000+ | 1.77 грн |
PLZ4V7A-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.56V 960MW DO219AC
Description: DIODE ZENER 4.56V 960MW DO219AC
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4500+ | 3.96 грн |
9000+ | 3.32 грн |
13500+ | 2.82 грн |
PLZ5V1A-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.94V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±2.63%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.94 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Description: DIODE ZENER 4.94V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±2.63%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.94 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
товар відсутній
PLZ5V1C-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.23V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±2.68%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.23 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Description: DIODE ZENER 5.23V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±2.68%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.23 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4500+ | 3.28 грн |
9000+ | 2.43 грн |
PLZ5V6A-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.42V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±2.49%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.42 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
Description: DIODE ZENER 5.42V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±2.49%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.42 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4500+ | 3.28 грн |
9000+ | 2.43 грн |
31500+ | 2.39 грн |
PLZ6V2A-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.94V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±2.61%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.94 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Description: DIODE ZENER 5.94V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±2.61%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.94 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4500+ | 3.29 грн |
9000+ | 2.44 грн |
PLZ6V8A-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.46V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±2.63%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.46 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
Description: DIODE ZENER 6.46V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±2.63%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.46 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4500+ | 3.29 грн |
9000+ | 2.44 грн |
PLZ7V5A-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.04V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±2.63%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.04 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Description: DIODE ZENER 7.04V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±2.63%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.04 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4500+ | 2.31 грн |
9000+ | 1.77 грн |
PLZ8V2B-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.99V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±2.57%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.99 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Description: DIODE ZENER 7.99V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±2.57%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.99 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4500+ | 3.29 грн |
9000+ | 2.44 грн |
PLZ9V1A-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.51V 960MW DO219AC
Description: DIODE ZENER 8.51V 960MW DO219AC
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4500+ | 3.73 грн |
9000+ | 3.13 грн |
13500+ | 2.66 грн |
PLZ9V1C-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.07V 960MW DO219AC
Description: DIODE ZENER 9.07V 960MW DO219AC
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)RGF1KHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 800V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
RGF1MHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 1KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
RGF1MHE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 1KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
S8CJ-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A DO214AB
Description: DIODE GEN PURP 600V 8A DO214AB
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3500+ | 18.8 грн |
S8CM-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3500+ | 20.41 грн |
7000+ | 18.62 грн |
10500+ | 17.24 грн |
SL04-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1.1 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1.1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1.1 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.77 грн |
6000+ | 7.17 грн |
9000+ | 6.45 грн |
30000+ | 5.97 грн |
SM5S24ATHE3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 38.9VC DO218AC
Packaging: Tape & Reel (TR)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 93A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 38.9VC DO218AC
Packaging: Tape & Reel (TR)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 93A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
750+ | 86.25 грн |
1500+ | 70.47 грн |