Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (37311) > Сторінка 355 з 622
Фото | Назва | Виробник | Інформація |
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SS5P10HM3_A/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A Current - Reverse Leakage @ Vr: 15 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
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V10PM10HM3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A Current - Reverse Leakage @ Vr: 120 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
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V10PM10-M3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A Current - Reverse Leakage @ Vr: 120 µA @ 100 V |
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V10PM10-M3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A Current - Reverse Leakage @ Vr: 120 µA @ 100 V |
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V1PM10HM3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: MicroSMP Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 100pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: MicroSMP (DO-219AD) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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V1PM10-M3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: MicroSMP Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 100pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: MicroSMP (DO-219AD) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
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V30D60CLHM3_A/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 15 A Current - Reverse Leakage @ Vr: 4 mA @ 60 V |
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VB30100CHM3/I | Vishay General Semiconductor - Diodes Division | Description: DIODE ARRAY SCHOTTKY 100V TO263 |
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VBT3045CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 45V TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-263AB Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A Current - Reverse Leakage @ Vr: 2 mA @ 45 V |
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VBT30L60CHM3/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-263AB Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A Current - Reverse Leakage @ Vr: 4 mA @ 60 V Qualification: AEC-Q101 |
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VCAN26A2-03S-E3-08 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: CAN Capacitance @ Frequency: 10pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 26.5V (Max) Supplier Device Package: SOT-23-3 Bidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 50V Power - Peak Pulse: 150W Power Line Protection: No Part Status: Active |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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VLIN1626-02GHE3-08 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 15.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 6A (8/20µs), 4A (8/20µs) Voltage - Reverse Standoff (Typ): 16V (Max), 26.5V (Max) Supplier Device Package: SOD-323 Bidirectional Channels: 1 Voltage - Breakdown (Min): 17.1V, 28V Voltage - Clamping (Max) @ Ipp: 33V, 50V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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VLIN2626-02G-E3-18 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 13.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 26.5V (Max) Supplier Device Package: SOD-323 Bidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 50V Power - Peak Pulse: 200W Power Line Protection: No |
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VLIN2626-02GHE3-08 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 13.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 26.5V (Max) Supplier Device Package: SOD-323 Bidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 50V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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VS-130MT160C | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: MTC Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTC Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 130 A Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 300 A |
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VS-150MT060WDF-P | Vishay General Semiconductor - Diodes Division |
Description: IGBT MOD 600V 138A 12MTP PRESS Packaging: Tube Package / Case: 12-MTP Module Mounting Type: Chassis Mount Input: Standard Configuration: Dual Buck Chopper Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.48V @ 15V, 80A NTC Thermistor: No Supplier Device Package: 12-MTP Pressfit Part Status: Obsolete Current - Collector (Ic) (Max): 138 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 543 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 14 nF @ 30 V |
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VS-160MT160C | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 160A MTC Packaging: Bulk Package / Case: MTC Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTC Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 160 A Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 300 A |
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VS-20CTH03FP-N3R | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 31 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220 Full Pack Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A Current - Reverse Leakage @ Vr: 20 µA @ 300 V |
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VS-30EPU12LHN3 | Vishay General Semiconductor - Diodes Division |
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VS-30EPU12L-N3 | Vishay General Semiconductor - Diodes Division |
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VS-30ETH06-N-S1 | Vishay General Semiconductor - Diodes Division |
Description: DIODE TO220-E3 Packaging: Tube Part Status: Obsolete |
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VS-43CTQ100-1-011P | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY TO262 Packaging: Tube Part Status: Obsolete |
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VS-75EPU12LHN3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 265 ns Technology: Standard Current - Average Rectified (Io): 75A Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.55 V @ 75 A Current - Reverse Leakage @ Vr: 420 µA @ 1200 V |
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VS-8ETH06SHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
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VS-8ETH06STRLHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
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VS-8ETH06STRRHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
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VS-ETU3006FP-M3R | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube |
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VS-GT120DA65U | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: Trench Part Status: Obsolete Current - Collector (Ic) (Max): 167 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 577 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 6.6 nF @ 30 V |
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VS-MURB820-1HM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-262 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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VS-MURB820HM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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VS-MURB820TRLHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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VS-MURB820TRRHM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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VSSAF5M6-M3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 580pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A Current - Reverse Leakage @ Vr: 350 µA @ 60 V |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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VS-VSKV162/12PBF | Vishay General Semiconductor - Diodes Division |
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VS-VSKV162/16PBF | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: INT-A-PAK (3) Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TJ) Structure: Common Cathode - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 160 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 355 A Voltage - Off State: 1.6 kV |
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VT30L60CHM3/4W | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A Current - Reverse Leakage @ Vr: 4 mA @ 60 V Qualification: AEC-Q101 |
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P4KE20A-E3/54 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 14.4A Voltage - Reverse Standoff (Typ): 17.1V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 19V Voltage - Clamping (Max) @ Ipp: 27.7V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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P4KE27AHE3/54 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 10.7A Voltage - Reverse Standoff (Typ): 23.1V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 37.5V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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P6KE540A-E3/54 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 810mA Voltage - Reverse Standoff (Typ): 459V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 513V Voltage - Clamping (Max) @ Ipp: 740V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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P6KE56AHE3/54 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 7.8A Voltage - Reverse Standoff (Typ): 47.8V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.2V Voltage - Clamping (Max) @ Ipp: 77V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4110 шт: термін постачання 21-31 дні (днів) |
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EGF1D-2HE3/67A | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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RGF1KHE3/5CA | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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RGF1M-7000HE3/5CA | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Grade: Automotive Qualification: AEC-Q101 |
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SMPC48AN-M3/H | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 19.4A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: TO-277A (SMPC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
на замовлення 1262 шт: термін постачання 21-31 дні (днів) |
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BYS11-90HE3_A/H | Vishay General Semiconductor - Diodes Division |
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BYS11-90HE3_A/I | Vishay General Semiconductor - Diodes Division |
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SB250S-E3/54 | Vishay General Semiconductor - Diodes Division |
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SS1H10HE3_B/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 860 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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SS210HE3_A/I | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 30 µA @ 100 V Grade: Automotive Qualification: AEC-Q100 |
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VCAN26A2-03GHE3-08 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: CAN Capacitance @ Frequency: 10pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 26.5V (Max) Supplier Device Package: SOT-323 Bidirectional Channels: 2 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 50V Power - Peak Pulse: 150W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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VCAN26A2-03GHE3-18 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: CAN Capacitance @ Frequency: 10pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 26.5V (Max) Supplier Device Package: SOT-323 Bidirectional Channels: 2 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 50V Power - Peak Pulse: 150W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
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VS-8ETH06-1HM3 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-262 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
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VS-VSKT320-08PBF | Vishay General Semiconductor - Diodes Division |
Description: THYRISTOR MAGN-A-PAK POWER MODUL Packaging: Bulk Package / Case: MAGN-A-PAK Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 500 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A, 9420A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 320 A Voltage - Gate Trigger (Vgt) (Max): 3 V Current - On State (It (RMS)) (Max): 710 A Voltage - Off State: 800 V |
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1N4730A-TR | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 50 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 20375 шт: термін постачання 21-31 дні (днів) |
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BY228-15TR | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V |
на замовлення 17873 шт: термін постачання 21-31 дні (днів) |
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BZT03C33-TR | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Tolerance: ±6.06% Package / Case: SOD-57, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-57 Part Status: Active Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 1 µA @ 24 V |
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BZX55C6V8-TR | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 3 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 26410 шт: термін постачання 21-31 дні (днів) |
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P4KE33CA-E3/54 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8.8A Voltage - Reverse Standoff (Typ): 28.2V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
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RMPG06D-E3/54 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: MPG06, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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SF4007-TR | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Avalanche Current - Average Rectified (Io): 1A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 43624 шт: термін постачання 21-31 дні (днів) |
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SS5P10HM3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
V10PM10HM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
V10PM10-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
товар відсутній
V10PM10-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
товар відсутній
V1PM10HM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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4500+ | 6 грн |
V1PM10-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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4500+ | 5.89 грн |
9000+ | 4.69 грн |
V30D60CLHM3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 15 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Description: DIODE ARRAY SCHOTTKY 60V TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 15 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
товар відсутній
VB30100CHM3/I |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 100V TO263
Description: DIODE ARRAY SCHOTTKY 100V TO263
товар відсутній
VBT3045CHM3/I |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Description: DIODE ARRAY SCHOTTKY 45V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
товар відсутній
VBT30L60CHM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 60V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Qualification: AEC-Q101
товар відсутній
VCAN26A2-03S-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26.5VWM 50VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 26.5VWM 50VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.17 грн |
6000+ | 4.76 грн |
9000+ | 4.12 грн |
VLIN1626-02GHE3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 26.5VWM SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 15.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs), 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max), 26.5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V, 28V
Voltage - Clamping (Max) @ Ipp: 33V, 50V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 16VWM 26.5VWM SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 15.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs), 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max), 26.5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V, 28V
Voltage - Clamping (Max) @ Ipp: 33V, 50V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.99 грн |
6000+ | 6.58 грн |
9000+ | 5.83 грн |
VLIN2626-02G-E3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26.5VWM 50VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 26.5VWM 50VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 200W
Power Line Protection: No
товар відсутній
VLIN2626-02GHE3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26.5VWM 50VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 13.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 26.5VWM 50VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 13.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.99 грн |
6000+ | 6.58 грн |
9000+ | 5.83 грн |
VS-130MT160C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 130A MTC
Packaging: Bulk
Package / Case: MTC
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTC
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 130 A
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 300 A
Description: BRIDGE RECT 3P 1.6KV 130A MTC
Packaging: Bulk
Package / Case: MTC
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTC
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 130 A
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 300 A
товар відсутній
VS-150MT060WDF-P |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 138A 12MTP PRESS
Packaging: Tube
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.48V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: 12-MTP Pressfit
Part Status: Obsolete
Current - Collector (Ic) (Max): 138 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 543 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 14 nF @ 30 V
Description: IGBT MOD 600V 138A 12MTP PRESS
Packaging: Tube
Package / Case: 12-MTP Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.48V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: 12-MTP Pressfit
Part Status: Obsolete
Current - Collector (Ic) (Max): 138 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 543 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 14 nF @ 30 V
товар відсутній
VS-160MT160C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 160A MTC
Packaging: Bulk
Package / Case: MTC
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTC
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 160 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 300 A
Description: BRIDGE RECT 3P 1.6KV 160A MTC
Packaging: Bulk
Package / Case: MTC
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTC
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 160 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 300 A
товар відсутній
VS-20CTH03FP-N3R |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 300V 10A TO220FP
Packaging: Tube
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
Description: DIODE ARRAY GP 300V 10A TO220FP
Packaging: Tube
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
товар відсутній
VS-30EPU12LHN3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A TO247AD
Description: DIODE GEN PURP 1.2KV 30A TO247AD
товар відсутній
VS-30EPU12L-N3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A TO247AD
Description: DIODE GEN PURP 1.2KV 30A TO247AD
товар відсутній
VS-30ETH06-N-S1 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE TO220-E3
Packaging: Tube
Part Status: Obsolete
Description: DIODE TO220-E3
Packaging: Tube
Part Status: Obsolete
товар відсутній
VS-43CTQ100-1-011P |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY TO262
Packaging: Tube
Part Status: Obsolete
Description: DIODE ARRAY SCHOTTKY TO262
Packaging: Tube
Part Status: Obsolete
товар відсутній
VS-75EPU12LHN3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 75A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 265 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.55 V @ 75 A
Current - Reverse Leakage @ Vr: 420 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 75A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 265 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.55 V @ 75 A
Current - Reverse Leakage @ Vr: 420 µA @ 1200 V
товар відсутній
VS-8ETH06SHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 8A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
VS-8ETH06STRLHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 8A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
VS-8ETH06STRRHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 8A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
VS-ETU3006FP-M3R |
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товар відсутній
VS-GT120DA65U |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 650V 167A 577W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Part Status: Obsolete
Current - Collector (Ic) (Max): 167 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 577 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6.6 nF @ 30 V
Description: IGBT MOD 650V 167A 577W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench
Part Status: Obsolete
Current - Collector (Ic) (Max): 167 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 577 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6.6 nF @ 30 V
товар відсутній
VS-MURB820-1HM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-262
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 8A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-262
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
VS-MURB820HM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 8A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
VS-MURB820TRLHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 8A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
VS-MURB820TRRHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 8A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
VSSAF5M6-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Description: DIODE SCHOTTKY 60V 5A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3500+ | 8.25 грн |
7000+ | 7.62 грн |
VS-VSKV162/12PBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR MODULE 1200V 355A INTAPAK
Description: SCR MODULE 1200V 355A INTAPAK
товар відсутній
VS-VSKV162/16PBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR MODULE 1600V 355A INTAPAK
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 355 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1600V 355A INTAPAK
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 355 A
Voltage - Off State: 1.6 kV
товар відсутній
VT30L60CHM3/4W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 60V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Qualification: AEC-Q101
товар відсутній
P4KE20A-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7VC DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 17.1VWM 27.7VC DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
на замовлення 7 шт:
термін постачання 21-31 дні (днів)P4KE27AHE3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 10.7A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 23.1VWM 37.5VC DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 10.7A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
P6KE540A-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 459VWM 740VC DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 810mA
Voltage - Reverse Standoff (Typ): 459V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 513V
Voltage - Clamping (Max) @ Ipp: 740V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 459VWM 740VC DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 810mA
Voltage - Reverse Standoff (Typ): 459V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 513V
Voltage - Clamping (Max) @ Ipp: 740V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 61.82 грн |
10+ | 52.27 грн |
100+ | 40.04 грн |
500+ | 29.71 грн |
1000+ | 23.77 грн |
2000+ | 23.12 грн |
P6KE56AHE3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 47.8VWM 77VC DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 47.8VWM 77VC DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4110 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 44.48 грн |
10+ | 36.44 грн |
100+ | 25.33 грн |
500+ | 18.56 грн |
1000+ | 15.08 грн |
2000+ | 13.48 грн |
EGF1D-2HE3/67A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
RGF1KHE3/5CA |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RGF1M-7000HE3/5CA |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 1KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMPC48AN-M3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 48VWM 77.4VC TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.4A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: TO-277A (SMPC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 48VWM 77.4VC TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.4A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: TO-277A (SMPC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 1262 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 37.69 грн |
10+ | 31.14 грн |
100+ | 21.65 грн |
500+ | 15.87 грн |
BYS11-90HE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Description: DIODE SCHOTTKY 90V 1.5A DO214AC
товар відсутній
BYS11-90HE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Description: DIODE SCHOTTKY 90V 1.5A DO214AC
товар відсутній
SB250S-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 2A DO204AL
Description: DIODE SCHOTTKY 50V 2A DO204AL
товар відсутній
SS1H10HE3_B/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7500+ | 8.96 грн |
SS210HE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q100
Description: DIODE SCHOTTKY 100V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
VCAN26A2-03GHE3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26.5VWM 50VC SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 26.5VWM 50VC SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.42 грн |
6000+ | 4.19 грн |
VCAN26A2-03GHE3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26.5VWM 50VC SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 26.5VWM 50VC SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
VS-8ETH06-1HM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-262
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 8A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-262
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
VS-VSKT320-08PBF |
Виробник: Vishay General Semiconductor - Diodes Division
Description: THYRISTOR MAGN-A-PAK POWER MODUL
Packaging: Bulk
Package / Case: MAGN-A-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A, 9420A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 710 A
Voltage - Off State: 800 V
Description: THYRISTOR MAGN-A-PAK POWER MODUL
Packaging: Bulk
Package / Case: MAGN-A-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A, 9420A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 710 A
Voltage - Off State: 800 V
товар відсутній
1N4730A-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 1.3W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 3.9V 1.3W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 20375 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 17.34 грн |
25+ | 11.83 грн |
100+ | 5.98 грн |
500+ | 4.58 грн |
1000+ | 3.4 грн |
2000+ | 2.86 грн |
BY228-15TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1.2KV 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Description: DIODE AVALANCHE 1.2KV 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 17873 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 76.14 грн |
10+ | 59.82 грн |
100+ | 46.52 грн |
500+ | 37 грн |
1000+ | 30.14 грн |
BZT03C33-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 27VWM 46.2VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.06%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 24 V
Description: TVS DIODE 27VWM 46.2VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.06%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 24 V
товар відсутній
BZX55C6V8-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 6.8V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 26410 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
27+ | 11.31 грн |
39+ | 7.48 грн |
100+ | 3.64 грн |
500+ | 2.85 грн |
1000+ | 1.98 грн |
2000+ | 1.71 грн |
5000+ | 1.56 грн |
P4KE33CA-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7VC DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 28.2VWM 45.7VC DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товар відсутній
RMPG06D-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A MPG06
Packaging: Cut Tape (CT)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A MPG06
Packaging: Cut Tape (CT)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 49 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.89 грн |
14+ | 21.63 грн |
SF4007-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE AVALANCHE 1KV 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 43624 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 36.94 грн |
10+ | 30.93 грн |
100+ | 21.41 грн |
500+ | 16.79 грн |
1000+ | 15.72 грн |