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TLP2767(TP,E TLP2767(TP,E Toshiba Semiconductor and Storage TLP2767_datasheet_en_20160422.pdf?did=36717&prodName=TLP2767 Description: OPTOISO 5KV TRI-STATE SO6L
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 3100 шт:
термін постачання 21-31 дні (днів)
2+185.19 грн
10+ 117.42 грн
100+ 86.11 грн
500+ 69.22 грн
Мінімальне замовлення: 2
TLP240D(TP1,F TLP240D(TP1,F Toshiba Semiconductor and Storage TLP240D_datasheet_en_20230525.pdf?did=13993&prodName=TLP240D Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 250 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CQC, cUL, UL, VDE
на замовлення 6221 шт:
термін постачання 21-31 дні (днів)
3+139.28 грн
10+ 85.95 грн
100+ 61.53 грн
500+ 48.71 грн
Мінімальне замовлення: 3
TLP241A(TP1,F TLP241A(TP1,F Toshiba Semiconductor and Storage TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CSA, cUL, UL, VDE
на замовлення 9181 шт:
термін постачання 21-31 дні (днів)
3+144.73 грн
10+ 89.77 грн
100+ 64.49 грн
500+ 51.16 грн
Мінімальне замовлення: 3
TLP3403(TP,F TLP3403(TP,F Toshiba Semiconductor and Storage Description: SSR RELAY SPST-NO 1A 0-20V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 220 mOhms
Operating Temperature: -40°C ~ 110°C
на замовлення 6403 шт:
термін постачання 21-31 дні (днів)
2+300.36 грн
10+ 196.84 грн
100+ 149.46 грн
500+ 122.72 грн
1000+ 117.33 грн
Мінімальне замовлення: 2
SSM3K7002KFU,LF SSM3K7002KFU,LF Toshiba Semiconductor and Storage SSM3K7002KFU_datasheet_en_20210528.pdf?did=35715&prodName=SSM3K7002KFU Description: MOSFET N-CH 60V 400MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
3000+2.3 грн
6000+ 2.09 грн
9000+ 1.78 грн
Мінімальне замовлення: 3000
TLP2770(D4,E TLP2770(D4,E Toshiba Semiconductor and Storage TLP2770_datasheet_en_20171115.pdf?did=53548&prodName=TLP2770 Description: OPTOISO 5KV TRI-STATE S06L
Packaging: Bulk
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 1.3ns, 1ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
2+157.18 грн
10+ 101.08 грн
125+ 77.8 грн
Мінімальне замовлення: 2
TC7WH02FU,LJ(CT TC7WH02FU,LJ(CT Toshiba Semiconductor and Storage TC7WH02FU_datasheet_en_20200205.pdf?did=20119&prodName=TC7WH02FU Description: IC GATE NOR 2CH 2-INP SM8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SM8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
товар відсутній
TC7WH02FU,LJ(CT TC7WH02FU,LJ(CT Toshiba Semiconductor and Storage TC7WH02FU_datasheet_en_20200205.pdf?did=20119&prodName=TC7WH02FU Description: IC GATE NOR 2CH 2-INP SM8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SM8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
на замовлення 2133 шт:
термін постачання 21-31 дні (днів)
10+31.9 грн
17+ 18.36 грн
25+ 15.05 грн
100+ 10.58 грн
250+ 8.85 грн
500+ 7.77 грн
1000+ 6.76 грн
Мінімальне замовлення: 10
KIA78L06BP Toshiba Semiconductor and Storage Description: IC REG LINEAR LDO 6V DIP
Packaging: Bulk
Part Status: Active
товар відсутній
TTA004B,Q TTA004B,Q Toshiba Semiconductor and Storage TTA004B_datasheet_en_20170109.pdf?did=14399&prodName=TTA004B Description: TRANS PNP 160V 1.5A TO126N
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-126N
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
на замовлення 2103 шт:
термін постачання 21-31 дні (днів)
7+49.02 грн
11+ 29 грн
100+ 18.67 грн
500+ 13.32 грн
1000+ 11.97 грн
2000+ 10.82 грн
Мінімальне замовлення: 7
TTC004B,Q TTC004B,Q Toshiba Semiconductor and Storage TTC004B_datasheet_en_20180223.pdf?did=14400&prodName=TTC004B Description: TRANS NPN 160V 1.5A TO126N
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-126N
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
на замовлення 3712 шт:
термін постачання 21-31 дні (днів)
6+56.02 грн
10+ 33.27 грн
100+ 21.54 грн
500+ 15.44 грн
1000+ 13.9 грн
2000+ 12.6 грн
Мінімальне замовлення: 6
TTD1509B,Q(S Toshiba Semiconductor and Storage TTD1509B_datasheet_en_20160930.pdf?did=35778&prodName=TTD1509B Description: TRANSISTOR NPN TO126N
Packaging: Tube
Part Status: Active
товар відсутній
2SA1020A,NSEIKIF(J 2SA1020A,NSEIKIF(J Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020A,T6CSF(J 2SA1020A,T6CSF(J Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-O(F,M) 2SA1020-O(F,M) Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-O(TE6,F,M) 2SA1020-O(TE6,F,M) Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-O,CKF(J 2SA1020-O,CKF(J Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-O,F(J 2SA1020-O,F(J Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-O,T6CSF(J 2SA1020-O,T6CSF(J Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(6MBH1,AF 2SA1020-Y(6MBH1,AF Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(F,M) 2SA1020-Y(F,M) Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(HIT,F,M) 2SA1020-Y(HIT,F,M) Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(ND1,AF) 2SA1020-Y(ND1,AF) Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(T6CANOAF 2SA1020-Y(T6CANOAF Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(T6CANOFM 2SA1020-Y(T6CANOFM Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(T6CN,A,F 2SA1020-Y(T6CN,A,F Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(T6FJT,AF 2SA1020-Y(T6FJT,AF Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(T6ND1,AF 2SA1020-Y(T6ND1,AF Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(T6ND3,AF 2SA1020-Y(T6ND3,AF Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(T6OMI,FM 2SA1020-Y(T6OMI,FM Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(T6TOJ,FM 2SA1020-Y(T6TOJ,FM Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(T6TR,A,F 2SA1020-Y(T6TR,A,F Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(T6TR1,AF 2SA1020-Y(T6TR1,AF Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y,F(J 2SA1020-Y,F(J Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y,HOF(M 2SA1020-Y,HOF(M Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y,T6F(J 2SA1020-Y,T6F(J Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y,T6KEHF(M 2SA1020-Y,T6KEHF(M Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1315-Y,HOF(M 2SA1315-Y,HOF(M Toshiba Semiconductor and Storage 2SA1315_2009-12-21.pdf Description: TRANS PNP 80V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 900 mW
товар відсутній
2SA1315-Y,T6ASNF(J 2SA1315-Y,T6ASNF(J Toshiba Semiconductor and Storage 2SA1315_2009-12-21.pdf Description: TRANS PNP 80V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 900 mW
товар відсутній
2SA1382,T6MIBF(J 2SA1382,T6MIBF(J Toshiba Semiconductor and Storage 2SA1382_2009-12-21.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 33mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 110MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1425-Y,T2F(J 2SA1425-Y,T2F(J Toshiba Semiconductor and Storage 2SA1425_2010-03-10.pdf Description: TRANS PNP 120V 0.8A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: MSTM
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
товар відсутній
2SA1428-O,T2CLAF(J 2SA1428-O,T2CLAF(J Toshiba Semiconductor and Storage 2SA1428_2009-12-21.pdf Description: TRANS PNP 50V 2A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1428-O,T2CLAF(M 2SA1428-O,T2CLAF(M Toshiba Semiconductor and Storage 2SA1428_2009-12-21.pdf Description: TRANS PNP 50V 2A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1428-O,T2WNLF(J 2SA1428-O,T2WNLF(J Toshiba Semiconductor and Storage 2SA1428_2009-12-21.pdf Description: TRANS PNP 50V 2A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1428-Y(T2TR,A,F 2SA1428-Y(T2TR,A,F Toshiba Semiconductor and Storage 2SA1428_2009-12-21.pdf Description: TRANS PNP 50V 2A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1428-Y,T2F(J 2SA1428-Y,T2F(J Toshiba Semiconductor and Storage 2SA1428_2009-12-21.pdf Description: TRANS PNP 50V 2A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1428-Y,T2F(M 2SA1428-Y,T2F(M Toshiba Semiconductor and Storage 2SA1428_2009-12-21.pdf Description: TRANS PNP 50V 2A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1429-Y(T2OMI,FM 2SA1429-Y(T2OMI,FM Toshiba Semiconductor and Storage 2SA1429.pdf Description: TRANS PNP 80V 2A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: MSTM
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товар відсутній
2SA1429-Y(T2TR,F,M 2SA1429-Y(T2TR,F,M Toshiba Semiconductor and Storage 2SA1429.pdf Description: TRANS PNP 80V 2A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товар відсутній
2SA1680(F,M) 2SA1680(F,M) Toshiba Semiconductor and Storage 2SA1680.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1680(T6DNSO,F,M 2SA1680(T6DNSO,F,M Toshiba Semiconductor and Storage 2SA1680.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1680,F(J 2SA1680,F(J Toshiba Semiconductor and Storage 2SA1680.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1680,T6ASTIF(J 2SA1680,T6ASTIF(J Toshiba Semiconductor and Storage 2SA1680.pdf Description: TRANS PNP 2A 50V TO226-3
товар відсутній
2SA1680,T6F(J 2SA1680,T6F(J Toshiba Semiconductor and Storage 2SA1680.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1680,T6SCMDF(J 2SA1680,T6SCMDF(J Toshiba Semiconductor and Storage 2SA1680.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1837(LBSAN,F,M) 2SA1837(LBSAN,F,M) Toshiba Semiconductor and Storage 2SA1837.pdf Description: TRANS PNP 230V 1A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 70MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
товар відсутній
2SA1837(PAIO,F,M) 2SA1837(PAIO,F,M) Toshiba Semiconductor and Storage 2SA1837.pdf Description: TRANS PNP 230V 1A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 70MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
товар відсутній
2SA1837,F(J 2SA1837,F(J Toshiba Semiconductor and Storage 2SA1837.pdf Description: TRANS PNP 230V 1A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 70MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
товар відсутній
2SA1837,HFEMBJF(J 2SA1837,HFEMBJF(J Toshiba Semiconductor and Storage 2SA1837.pdf Description: TRANS PNP 230V 1A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 70MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
товар відсутній
2SA1837,HFEYHF(J 2SA1837,HFEYHF(J Toshiba Semiconductor and Storage 2SA1837.pdf Description: TRANS PNP 230V 1A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 70MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
товар відсутній
TLP2767(TP,E TLP2767_datasheet_en_20160422.pdf?did=36717&prodName=TLP2767
TLP2767(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV TRI-STATE SO6L
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 3100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+185.19 грн
10+ 117.42 грн
100+ 86.11 грн
500+ 69.22 грн
Мінімальне замовлення: 2
TLP240D(TP1,F TLP240D_datasheet_en_20230525.pdf?did=13993&prodName=TLP240D
TLP240D(TP1,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 250 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CQC, cUL, UL, VDE
на замовлення 6221 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+139.28 грн
10+ 85.95 грн
100+ 61.53 грн
500+ 48.71 грн
Мінімальне замовлення: 3
TLP241A(TP1,F TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A
TLP241A(TP1,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CSA, cUL, UL, VDE
на замовлення 9181 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+144.73 грн
10+ 89.77 грн
100+ 64.49 грн
500+ 51.16 грн
Мінімальне замовлення: 3
TLP3403(TP,F
TLP3403(TP,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-20V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 220 mOhms
Operating Temperature: -40°C ~ 110°C
на замовлення 6403 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+300.36 грн
10+ 196.84 грн
100+ 149.46 грн
500+ 122.72 грн
1000+ 117.33 грн
Мінімальне замовлення: 2
SSM3K7002KFU,LF SSM3K7002KFU_datasheet_en_20210528.pdf?did=35715&prodName=SSM3K7002KFU
SSM3K7002KFU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 400MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+2.3 грн
6000+ 2.09 грн
9000+ 1.78 грн
Мінімальне замовлення: 3000
TLP2770(D4,E TLP2770_datasheet_en_20171115.pdf?did=53548&prodName=TLP2770
TLP2770(D4,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV TRI-STATE S06L
Packaging: Bulk
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 1.3ns, 1ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+157.18 грн
10+ 101.08 грн
125+ 77.8 грн
Мінімальне замовлення: 2
TC7WH02FU,LJ(CT TC7WH02FU_datasheet_en_20200205.pdf?did=20119&prodName=TC7WH02FU
TC7WH02FU,LJ(CT
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 2CH 2-INP SM8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SM8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
товар відсутній
TC7WH02FU,LJ(CT TC7WH02FU_datasheet_en_20200205.pdf?did=20119&prodName=TC7WH02FU
TC7WH02FU,LJ(CT
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 2CH 2-INP SM8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SM8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
на замовлення 2133 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.9 грн
17+ 18.36 грн
25+ 15.05 грн
100+ 10.58 грн
250+ 8.85 грн
500+ 7.77 грн
1000+ 6.76 грн
Мінімальне замовлення: 10
KIA78L06BP
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 6V DIP
Packaging: Bulk
Part Status: Active
товар відсутній
TTA004B,Q TTA004B_datasheet_en_20170109.pdf?did=14399&prodName=TTA004B
TTA004B,Q
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 160V 1.5A TO126N
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-126N
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
на замовлення 2103 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+49.02 грн
11+ 29 грн
100+ 18.67 грн
500+ 13.32 грн
1000+ 11.97 грн
2000+ 10.82 грн
Мінімальне замовлення: 7
TTC004B,Q TTC004B_datasheet_en_20180223.pdf?did=14400&prodName=TTC004B
TTC004B,Q
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 160V 1.5A TO126N
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-126N
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
на замовлення 3712 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+56.02 грн
10+ 33.27 грн
100+ 21.54 грн
500+ 15.44 грн
1000+ 13.9 грн
2000+ 12.6 грн
Мінімальне замовлення: 6
TTD1509B,Q(S TTD1509B_datasheet_en_20160930.pdf?did=35778&prodName=TTD1509B
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN TO126N
Packaging: Tube
Part Status: Active
товар відсутній
2SA1020A,NSEIKIF(J DS_264_2SA1020.pdf
2SA1020A,NSEIKIF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020A,T6CSF(J DS_264_2SA1020.pdf
2SA1020A,T6CSF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-O(F,M) DS_264_2SA1020.pdf
2SA1020-O(F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-O(TE6,F,M) DS_264_2SA1020.pdf
2SA1020-O(TE6,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-O,CKF(J DS_264_2SA1020.pdf
2SA1020-O,CKF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-O,F(J DS_264_2SA1020.pdf
2SA1020-O,F(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-O,T6CSF(J DS_264_2SA1020.pdf
2SA1020-O,T6CSF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(6MBH1,AF DS_264_2SA1020.pdf
2SA1020-Y(6MBH1,AF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(F,M) DS_264_2SA1020.pdf
2SA1020-Y(F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(HIT,F,M) DS_264_2SA1020.pdf
2SA1020-Y(HIT,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(ND1,AF) DS_264_2SA1020.pdf
2SA1020-Y(ND1,AF)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(T6CANOAF DS_264_2SA1020.pdf
2SA1020-Y(T6CANOAF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(T6CANOFM DS_264_2SA1020.pdf
2SA1020-Y(T6CANOFM
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(T6CN,A,F DS_264_2SA1020.pdf
2SA1020-Y(T6CN,A,F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(T6FJT,AF DS_264_2SA1020.pdf
2SA1020-Y(T6FJT,AF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(T6ND1,AF DS_264_2SA1020.pdf
2SA1020-Y(T6ND1,AF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(T6ND3,AF DS_264_2SA1020.pdf
2SA1020-Y(T6ND3,AF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(T6OMI,FM DS_264_2SA1020.pdf
2SA1020-Y(T6OMI,FM
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(T6TOJ,FM DS_264_2SA1020.pdf
2SA1020-Y(T6TOJ,FM
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(T6TR,A,F DS_264_2SA1020.pdf
2SA1020-Y(T6TR,A,F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y(T6TR1,AF DS_264_2SA1020.pdf
2SA1020-Y(T6TR1,AF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y,F(J DS_264_2SA1020.pdf
2SA1020-Y,F(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y,HOF(M DS_264_2SA1020.pdf
2SA1020-Y,HOF(M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y,T6F(J DS_264_2SA1020.pdf
2SA1020-Y,T6F(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1020-Y,T6KEHF(M DS_264_2SA1020.pdf
2SA1020-Y,T6KEHF(M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1315-Y,HOF(M 2SA1315_2009-12-21.pdf
2SA1315-Y,HOF(M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 80V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 900 mW
товар відсутній
2SA1315-Y,T6ASNF(J 2SA1315_2009-12-21.pdf
2SA1315-Y,T6ASNF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 80V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 900 mW
товар відсутній
2SA1382,T6MIBF(J 2SA1382_2009-12-21.pdf
2SA1382,T6MIBF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 33mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 110MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1425-Y,T2F(J 2SA1425_2010-03-10.pdf
2SA1425-Y,T2F(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.8A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: MSTM
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
товар відсутній
2SA1428-O,T2CLAF(J 2SA1428_2009-12-21.pdf
2SA1428-O,T2CLAF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1428-O,T2CLAF(M 2SA1428_2009-12-21.pdf
2SA1428-O,T2CLAF(M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1428-O,T2WNLF(J 2SA1428_2009-12-21.pdf
2SA1428-O,T2WNLF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1428-Y(T2TR,A,F 2SA1428_2009-12-21.pdf
2SA1428-Y(T2TR,A,F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1428-Y,T2F(J 2SA1428_2009-12-21.pdf
2SA1428-Y,T2F(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1428-Y,T2F(M 2SA1428_2009-12-21.pdf
2SA1428-Y,T2F(M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1429-Y(T2OMI,FM 2SA1429.pdf
2SA1429-Y(T2OMI,FM
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 80V 2A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: MSTM
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товар відсутній
2SA1429-Y(T2TR,F,M 2SA1429.pdf
2SA1429-Y(T2TR,F,M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 80V 2A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товар відсутній
2SA1680(F,M) 2SA1680.pdf
2SA1680(F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1680(T6DNSO,F,M 2SA1680.pdf
2SA1680(T6DNSO,F,M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1680,F(J 2SA1680.pdf
2SA1680,F(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1680,T6ASTIF(J 2SA1680.pdf
2SA1680,T6ASTIF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 2A 50V TO226-3
товар відсутній
2SA1680,T6F(J 2SA1680.pdf
2SA1680,T6F(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1680,T6SCMDF(J 2SA1680.pdf
2SA1680,T6SCMDF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товар відсутній
2SA1837(LBSAN,F,M) 2SA1837.pdf
2SA1837(LBSAN,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 230V 1A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 70MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
товар відсутній
2SA1837(PAIO,F,M) 2SA1837.pdf
2SA1837(PAIO,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 230V 1A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 70MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
товар відсутній
2SA1837,F(J 2SA1837.pdf
2SA1837,F(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 230V 1A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 70MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
товар відсутній
2SA1837,HFEMBJF(J 2SA1837.pdf
2SA1837,HFEMBJF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 230V 1A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 70MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
товар відсутній
2SA1837,HFEYHF(J 2SA1837.pdf
2SA1837,HFEYHF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 230V 1A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 70MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
товар відсутній
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