![2SA1020-Y(F,M) 2SA1020-Y(F,M)](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/6347/264%7E2-5J1A%7E%7E3.jpg)
2SA1020-Y(F,M) Toshiba Semiconductor and Storage
![DS_264_2SA1020.pdf](/images/adobe-acrobat.png)
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис 2SA1020-Y(F,M) Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V, Frequency - Transition: 100MHz, Supplier Device Package: TO-92MOD, Part Status: Obsolete, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 900 mW.
Інші пропозиції 2SA1020-Y(F,M)
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
2SA1020-Y(F,M) | Виробник : Toshiba |
![]() |
товару немає в наявності |