Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (23456) > Сторінка 93 з 391
| Фото | Назва | Виробник | Інформація |
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1N5393GHA0G | Taiwan Semiconductor Corporation |
 Description: DIODE GEN PURP 200V 1.5A DO204ACPackaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
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1N5395G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
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1N5395GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Grade: Automotive Qualification: AEC-Q101 |
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1N5397G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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1N5397GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
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1N5398G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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1N5398GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Grade: Automotive Qualification: AEC-Q101 |
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1N5399G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - DC Reverse (Vr) (Max): 1000 V |
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1N5399GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
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1N5400G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
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1N5400GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V Qualification: AEC-Q101 |
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1N5401G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
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1N5401GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: AEC-Q101 |
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1N5402G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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1N5402GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
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1N5404G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
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1N5404GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 |
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1N5406GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
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1N5407GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Qualification: AEC-Q101 |
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1N5408GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
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1N5820 A0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 475 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 20 V |
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1N5820HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 475 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 20 V Qualification: AEC-Q101 |
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1N5821 A0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
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1N5821HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V Qualification: AEC-Q101 |
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1N5822 A0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
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1N5822HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Qualification: AEC-Q101 |
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2A05GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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2A06G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 2A DO204AC |
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2A06GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 2A DO204AC |
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2A07G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 2A DO204AC |
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2A07GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 2A DO204AC |
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31DF4 A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 3A DO201AD |
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| 6A05G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 6A R-6 |
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| 6A05GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 6A R-6 |
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| 6A40G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 6A R-6 |
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| 6A40GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 6A R-6 |
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6A60G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 6A R-6 |
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6A60GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 6A R-6 |
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6A80G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 6A R-6 |
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6A80GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 6A R-6 |
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BZW06-128 A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 128V 265V DO204AC |
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BZW06-128B A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 128VWM 265VC DO204AC |
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BZW06-13B A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 12.8V 27.2V DO204AC |
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BZW06-15 A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 15.3VWM 32.5VC DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 123A (8/20µs) Voltage - Reverse Standoff (Typ): 15.3V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.1V Voltage - Clamping (Max) @ Ipp: 32.5V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
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BZW06-154 A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 154VWM 317VC DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 13A (8/20µs) Voltage - Reverse Standoff (Typ): 154V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 171V Voltage - Clamping (Max) @ Ipp: 317V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
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BZW06-154B A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 154VWM 317VC DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 13A (8/20µs) Voltage - Reverse Standoff (Typ): 154V Supplier Device Package: DO-204AC (DO-15) Bidirectional Channels: 1 Voltage - Breakdown (Min): 171V Voltage - Clamping (Max) @ Ipp: 317V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
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BZW06-15B A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 15.3VWM 32.5VC DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 123A (8/20µs) Voltage - Reverse Standoff (Typ): 15.3V Supplier Device Package: DO-204AC (DO-15) Bidirectional Channels: 1 Voltage - Breakdown (Min): 17.1V Voltage - Clamping (Max) @ Ipp: 32.5V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
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BZW06-23 A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 23.1VWM 48.3VC DO204AC |
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BZW06-23B A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 23.1VWM 48.3VC DO204AC |
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BZW06-256 A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 256V 529V DO204AC |
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BZW06-256B A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 256V 529V DO204AC |
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BZW06-26 A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 25.6V 53.5V DO204AC |
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BZW06-26B A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 25.6V 53.5V DO204AC |
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BZW06-28 A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 28.2V 59V DO204AC |
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BZW06-28B A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 28.2VWM 59VC DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 68A (8/20µs) Voltage - Reverse Standoff (Typ): 28.2V Supplier Device Package: DO-204AC (DO-15) Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 59V Power - Peak Pulse: 600W Power Line Protection: No |
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BZW06-33 A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 69.7VC DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 57A (8/20µs) Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 69.7V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
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BZW06-33B A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 69.7VC DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 57A (8/20µs) Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-204AC (DO-15) Bidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 69.7V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
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BZW06-342 A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 342VWM 706VC DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.7A (8/20µs) Voltage - Reverse Standoff (Typ): 342V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 380V Voltage - Clamping (Max) @ Ipp: 706V Power - Peak Pulse: 600W Power Line Protection: No |
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BZW06-342B A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 342VWM 706VC DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.7A (8/20µs) Voltage - Reverse Standoff (Typ): 342V Supplier Device Package: DO-204AC (DO-15) Bidirectional Channels: 1 Voltage - Breakdown (Min): 380V Voltage - Clamping (Max) @ Ipp: 706V Power - Peak Pulse: 600W Power Line Protection: No |
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BZW06-376 A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 376VWM 776VC DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.7A (8/20µs) Voltage - Reverse Standoff (Typ): 376V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 418V Voltage - Clamping (Max) @ Ipp: 776V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
товар відсутній |
| 1N5393GHA0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
| 1N5395G A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
| 1N5395GHA0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| 1N5397G A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
| 1N5397GHA0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| 1N5398G A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
| 1N5398GHA0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 800V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| 1N5399G A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max): 1000 V
Description: DIODE GEN PURP 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max): 1000 V
товар відсутній
| 1N5399GHA0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
товар відсутній
| 1N5400G A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
| 1N5400GHA0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
| 1N5401G A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
| 1N5401GHA0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
| 1N5402G A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
| 1N5402GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
| 1N5404G A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
| 1N5404GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
| 1N5406GHA0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
| 1N5407GHA0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 800V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
товар відсутній
| 1N5408GHA0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
товар відсутній
| 1N5820 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 475 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Description: DIODE SCHOTTKY 20V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 475 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
товар відсутній
| 1N5820HA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 475 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 20V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 475 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Qualification: AEC-Q101
товар відсутній
| 1N5821 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
товар відсутній
| 1N5821HA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
товар відсутній
| 1N5822 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товар відсутній
| 1N5822HA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
товар відсутній
| 2A05GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
| 2A06G A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO204AC
Description: DIODE GEN PURP 800V 2A DO204AC
товар відсутній
| 2A06GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO204AC
Description: DIODE GEN PURP 800V 2A DO204AC
товар відсутній
| 2A07G A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 2A DO204AC
Description: DIODE GEN PURP 2A DO204AC
товар відсутній
| 2A07GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 2A DO204AC
Description: DIODE GEN PURP 2A DO204AC
товар відсутній
| 31DF4 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO201AD
Description: DIODE GEN PURP 400V 3A DO201AD
товар відсутній
| 6A05G A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 6A R-6
Description: DIODE GEN PURP 50V 6A R-6
товар відсутній
| 6A05GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 6A R-6
Description: DIODE GEN PURP 50V 6A R-6
товар відсутній
| 6A40G A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 6A R-6
Description: DIODE GEN PURP 400V 6A R-6
товар відсутній
| 6A40GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 6A R-6
Description: DIODE GEN PURP 400V 6A R-6
товар відсутній
| 6A60G A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A R-6
Description: DIODE GEN PURP 600V 6A R-6
товар відсутній
| 6A60GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A R-6
Description: DIODE GEN PURP 600V 6A R-6
товар відсутній
| 6A80G A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 6A R-6
Description: DIODE GEN PURP 800V 6A R-6
товар відсутній
| 6A80GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 6A R-6
Description: DIODE GEN PURP 800V 6A R-6
товар відсутній
| BZW06-128 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 128V 265V DO204AC
Description: TVS DIODE 128V 265V DO204AC
товар відсутній
| BZW06-128B A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 128VWM 265VC DO204AC
Description: TVS DIODE 128VWM 265VC DO204AC
товар відсутній
| BZW06-13B A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8V 27.2V DO204AC
Description: TVS DIODE 12.8V 27.2V DO204AC
товар відсутній
| BZW06-15 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 32.5VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 123A (8/20µs)
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 32.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 15.3VWM 32.5VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 123A (8/20µs)
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 32.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
| BZW06-154 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 154VWM 317VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A (8/20µs)
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 317V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 154VWM 317VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A (8/20µs)
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 317V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
| BZW06-154B A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 154VWM 317VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A (8/20µs)
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 317V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 154VWM 317VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A (8/20µs)
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 317V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
| BZW06-15B A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 32.5VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 123A (8/20µs)
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 32.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 15.3VWM 32.5VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 123A (8/20µs)
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 32.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
| BZW06-23 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 23.1VWM 48.3VC DO204AC
Description: TVS DIODE 23.1VWM 48.3VC DO204AC
товар відсутній
| BZW06-23B A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 23.1VWM 48.3VC DO204AC
Description: TVS DIODE 23.1VWM 48.3VC DO204AC
товар відсутній
| BZW06-256 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 256V 529V DO204AC
Description: TVS DIODE 256V 529V DO204AC
товар відсутній
| BZW06-256B A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 256V 529V DO204AC
Description: TVS DIODE 256V 529V DO204AC
товар відсутній
| BZW06-26 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6V 53.5V DO204AC
Description: TVS DIODE 25.6V 53.5V DO204AC
товар відсутній
| BZW06-26B A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6V 53.5V DO204AC
Description: TVS DIODE 25.6V 53.5V DO204AC
товар відсутній
| BZW06-28 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2V 59V DO204AC
Description: TVS DIODE 28.2V 59V DO204AC
товар відсутній
| BZW06-28B A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 59VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 59V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 28.2VWM 59VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 59V
Power - Peak Pulse: 600W
Power Line Protection: No
товар відсутній
| BZW06-33 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 69.7VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57A (8/20µs)
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 69.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 33.3VWM 69.7VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57A (8/20µs)
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 69.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
| BZW06-33B A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 69.7VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57A (8/20µs)
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 69.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 33.3VWM 69.7VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57A (8/20µs)
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 69.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
| BZW06-342 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 342VWM 706VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A (8/20µs)
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 706V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 342VWM 706VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A (8/20µs)
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 706V
Power - Peak Pulse: 600W
Power Line Protection: No
товар відсутній
| BZW06-342B A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 342VWM 706VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A (8/20µs)
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 706V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 342VWM 706VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A (8/20µs)
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 706V
Power - Peak Pulse: 600W
Power Line Protection: No
товар відсутній
| BZW06-376 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 376VWM 776VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A (8/20µs)
Voltage - Reverse Standoff (Typ): 376V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 418V
Voltage - Clamping (Max) @ Ipp: 776V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 376VWM 776VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A (8/20µs)
Voltage - Reverse Standoff (Typ): 376V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 418V
Voltage - Clamping (Max) @ Ipp: 776V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній