Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (23434) > Сторінка 68 з 391
Фото | Назва | Виробник | Інформація |
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SR110 R0G | Taiwan Semiconductor Corporation |
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SR110HR0G | Taiwan Semiconductor Corporation |
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UF1MHR0G | Taiwan Semiconductor Corporation |
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UF4001 R0G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
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UF4001HR0G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V Qualification: AEC-Q101 |
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UF4002 R0G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
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UF4002HR0G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: AEC-Q101 |
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UF4003 R0G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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UF4003HR0G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
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UF4004 R0G | Taiwan Semiconductor Corporation |
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UF4004HR0G | Taiwan Semiconductor Corporation |
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UF4006 R0G | Taiwan Semiconductor Corporation |
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UF4006HR0G | Taiwan Semiconductor Corporation |
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BAV101 L1G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: Mini MELF Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
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BAV103 L1G | Taiwan Semiconductor Corporation |
Description: DIODE GP 250V 200MA MINI MELF Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: Mini MELF Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
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BZS55B24 RXG | Taiwan Semiconductor Corporation |
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BZS55B2V4 RXG | Taiwan Semiconductor Corporation |
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BZS55B30 RXG | Taiwan Semiconductor Corporation |
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BZS55B33 RXG | Taiwan Semiconductor Corporation |
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BZS55B7V5 RXG | Taiwan Semiconductor Corporation |
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BZS55C10 RXG | Taiwan Semiconductor Corporation |
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BZS55C11 RXG | Taiwan Semiconductor Corporation |
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BZS55C12 RXG | Taiwan Semiconductor Corporation |
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BZS55C13 RXG | Taiwan Semiconductor Corporation |
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BZS55C15 RXG | Taiwan Semiconductor Corporation |
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BZS55C16 RXG | Taiwan Semiconductor Corporation |
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BZS55C18 RXG | Taiwan Semiconductor Corporation |
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BZS55C20 RXG | Taiwan Semiconductor Corporation |
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BZS55C22 RXG | Taiwan Semiconductor Corporation |
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BZS55C24 RXG | Taiwan Semiconductor Corporation |
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BZS55C27 RXG | Taiwan Semiconductor Corporation |
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BZS55C2V4 RXG | Taiwan Semiconductor Corporation |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: 1206 (3216 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.4 V Impedance (Max) (Zzt): 85 Ohms Supplier Device Package: 1206 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Current - Reverse Leakage @ Vr: 50 µA @ 1 V |
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BZS55C2V7 RXG | Taiwan Semiconductor Corporation |
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BZS55C30 RXG | Taiwan Semiconductor Corporation |
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BZS55C33 RXG | Taiwan Semiconductor Corporation |
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BZS55C36 RXG | Taiwan Semiconductor Corporation |
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BZS55C3V0 RXG | Taiwan Semiconductor Corporation |
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BZS55C3V3 RXG | Taiwan Semiconductor Corporation |
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BZS55C3V6 RXG | Taiwan Semiconductor Corporation |
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BZS55C3V9 RXG | Taiwan Semiconductor Corporation |
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BZS55C4V3 RXG | Taiwan Semiconductor Corporation |
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BZS55C4V7 RXG | Taiwan Semiconductor Corporation |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: 1206 (3216 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: 1206 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 1 V |
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BZS55C5V1 RXG | Taiwan Semiconductor Corporation |
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BZS55C5V6 RXG | Taiwan Semiconductor Corporation |
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BZS55C6V2 RXG | Taiwan Semiconductor Corporation |
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BZS55C6V8 RXG | Taiwan Semiconductor Corporation |
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BZS55C7V5 RXG | Taiwan Semiconductor Corporation |
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BZS55C8V2 RXG | Taiwan Semiconductor Corporation |
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BZS55C9V1 RXG | Taiwan Semiconductor Corporation |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: 1206 (3216 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: 1206 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V |
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BZT55B16 L1G | Taiwan Semiconductor Corporation |
![]() Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: Mini MELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 12 V |
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BZT55B75 L1G | Taiwan Semiconductor Corporation |
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BZT55B7V5 L1G | Taiwan Semiconductor Corporation |
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BZT55C15 L1G | Taiwan Semiconductor Corporation |
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BZT55C2V4 L1G | Taiwan Semiconductor Corporation |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 2.4 V Impedance (Max) (Zzt): 85 Ohms Supplier Device Package: Mini MELF Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 50 µA @ 1 V |
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BZT55C33 L1G | Taiwan Semiconductor Corporation |
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BZT55C4V7 L1G | Taiwan Semiconductor Corporation |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: Mini MELF Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 1 V |
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BZT55C6V2 L1G | Taiwan Semiconductor Corporation |
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BZT55C6V8 L1G | Taiwan Semiconductor Corporation |
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BZT55C8V2 L1G | Taiwan Semiconductor Corporation |
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BZV55B12 L1G | Taiwan Semiconductor Corporation |
![]() Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: Mini MELF Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V |
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SR110 R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A DO204AL
Description: DIODE SCHOTTKY 100V 1A DO204AL
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SR110HR0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A DO204AL
Description: DIODE SCHOTTKY 100V 1A DO204AL
товар відсутній
UF1MHR0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO204AL
Description: DIODE GEN PURP 1A DO204AL
товар відсутній
UF4001 R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
UF4001HR0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
UF4002 R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
UF4002HR0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
UF4003 R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
UF4003HR0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
UF4004 R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Description: DIODE GEN PURP 400V 1A DO204AL
товар відсутній
UF4004HR0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Description: DIODE GEN PURP 400V 1A DO204AL
товар відсутній
UF4006 R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Description: DIODE GEN PURP 800V 1A DO204AL
товар відсутній
UF4006HR0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Description: DIODE GEN PURP 800V 1A DO204AL
товар відсутній
BAV101 L1G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 250V 200MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE GP 250V 200MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товар відсутній
BAV103 L1G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 250V 200MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE GP 250V 200MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товар відсутній
BZS55B24 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 500MW 1206
Description: DIODE ZENER 24V 500MW 1206
товар відсутній
BZS55B2V4 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 500MW 1206
Description: DIODE ZENER 2.4V 500MW 1206
товар відсутній
BZS55B30 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 500MW 1206
Description: DIODE ZENER 30V 500MW 1206
товар відсутній
BZS55B33 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 500MW 1206
Description: DIODE ZENER 33V 500MW 1206
товар відсутній
BZS55B7V5 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 500MW 1206
Description: DIODE ZENER 7.5V 500MW 1206
товар відсутній
BZS55C10 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW 1206
Description: DIODE ZENER 10V 500MW 1206
товар відсутній
BZS55C11 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 500MW 1206
Description: DIODE ZENER 11V 500MW 1206
товар відсутній
BZS55C12 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW 1206
Description: DIODE ZENER 12V 500MW 1206
товар відсутній
BZS55C13 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW 1206
Description: DIODE ZENER 13V 500MW 1206
товар відсутній
BZS55C15 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 500MW 1206
Description: DIODE ZENER 15V 500MW 1206
товар відсутній
BZS55C16 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 500MW 1206
Description: DIODE ZENER 16V 500MW 1206
товар відсутній
BZS55C18 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW 1206
Description: DIODE ZENER 18V 500MW 1206
товар відсутній
BZS55C20 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW 1206
Description: DIODE ZENER 20V 500MW 1206
товар відсутній
BZS55C22 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW 1206
Description: DIODE ZENER 22V 500MW 1206
товар відсутній
BZS55C24 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 500MW 1206
Description: DIODE ZENER 24V 500MW 1206
товар відсутній
BZS55C27 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 500MW 1206
Description: DIODE ZENER 27V 500MW 1206
товар відсутній
BZS55C2V4 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 500MW 1206
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: 1206
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Description: DIODE ZENER 2.4V 500MW 1206
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: 1206
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
товар відсутній
BZS55C2V7 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 500MW 1206
Description: DIODE ZENER 2.7V 500MW 1206
товар відсутній
BZS55C30 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 500MW 1206
Description: DIODE ZENER 30V 500MW 1206
товар відсутній
BZS55C33 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 500MW 1206
Description: DIODE ZENER 33V 500MW 1206
товар відсутній
BZS55C36 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 500MW 1206
Description: DIODE ZENER 36V 500MW 1206
товар відсутній
BZS55C3V0 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3V 500MW 1206
Description: DIODE ZENER 3V 500MW 1206
товар відсутній
BZS55C3V3 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW 1206
Description: DIODE ZENER 3.3V 500MW 1206
товар відсутній
BZS55C3V6 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.6V 500MW 1206
Description: DIODE ZENER 3.6V 500MW 1206
товар відсутній
BZS55C3V9 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 500MW 1206
Description: DIODE ZENER 3.9V 500MW 1206
товар відсутній
BZS55C4V3 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW 1206
Description: DIODE ZENER 4.3V 500MW 1206
товар відсутній
BZS55C4V7 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 500MW 1206
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: 1206
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Description: DIODE ZENER 4.7V 500MW 1206
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: 1206
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
товар відсутній
BZS55C5V1 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 500MW 1206
Description: DIODE ZENER 5.1V 500MW 1206
товар відсутній
BZS55C5V6 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 500MW 1206
Description: DIODE ZENER 5.6V 500MW 1206
товар відсутній
BZS55C6V2 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 500MW 1206
Description: DIODE ZENER 6.2V 500MW 1206
товар відсутній
BZS55C6V8 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 500MW 1206
Description: DIODE ZENER 6.8V 500MW 1206
товар відсутній
BZS55C7V5 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 500MW 1206
Description: DIODE ZENER 7.5V 500MW 1206
товар відсутній
BZS55C8V2 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW 1206
Description: DIODE ZENER 8.2V 500MW 1206
товар відсутній
BZS55C9V1 RXG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW 1206
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: 1206
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Description: DIODE ZENER 9.1V 500MW 1206
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: 1206
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
товар відсутній
BZT55B16 L1G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Description: DIODE ZENER 16V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
товар відсутній
BZT55B75 L1G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 500MW MINI MELF
Description: DIODE ZENER 75V 500MW MINI MELF
товар відсутній
BZT55B7V5 L1G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 500MW MINI MELF
Description: DIODE ZENER 7.5V 500MW MINI MELF
товар відсутній
BZT55C15 L1G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 500MW MINI MELF
Description: DIODE ZENER 15V 500MW MINI MELF
товар відсутній
BZT55C2V4 L1G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: Mini MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Description: DIODE ZENER 2.4V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: Mini MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
товар відсутній
BZT55C33 L1G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 500MW MINI MELF
Description: DIODE ZENER 33V 500MW MINI MELF
товар відсутній
BZT55C4V7 L1G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Mini MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Description: DIODE ZENER 4.7V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Mini MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
товар відсутній
BZT55C6V2 L1G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 500MW MINI MELF
Description: DIODE ZENER 6.2V 500MW MINI MELF
товар відсутній
BZT55C6V8 L1G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 500MW MINI MELF
Description: DIODE ZENER 6.8V 500MW MINI MELF
товар відсутній
BZT55C8V2 L1G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW MINI MELF
Description: DIODE ZENER 8.2V 500MW MINI MELF
товар відсутній
BZV55B12 L1G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: Mini MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Description: DIODE ZENER 12V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: Mini MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
товар відсутній