Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (23434) > Сторінка 303 з 391

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HT18GH HT18GH Taiwan Semiconductor Corporation Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+5.72 грн
Мінімальне замовлення: 5000
HT14GH HT14GH Taiwan Semiconductor Corporation Description: 50NS, 1A, 300V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+5.72 грн
Мінімальне замовлення: 5000
HT15GH HT15GH Taiwan Semiconductor Corporation Description: 50NS, 1A, 400V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+5.72 грн
Мінімальне замовлення: 5000
HT16GH HT16GH Taiwan Semiconductor Corporation Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+5.72 грн
Мінімальне замовлення: 5000
SRT115H SRT115H Taiwan Semiconductor Corporation pdf.php?pn=SRT115 Description: DIODE SCHOTTKY 150V 1A TS-1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
SFT15GH SFT15GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 300V 1A TS-1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
товар відсутній
SFT18GH SFT18GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1A TS-1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+6.74 грн
Мінімальне замовлення: 5000
ES1JH ES1JH Taiwan Semiconductor Corporation ES1AH SERIES_B2112.pdf Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9990 шт:
термін постачання 21-31 дні (днів)
12+26.39 грн
16+ 18.44 грн
100+ 9.28 грн
500+ 7.72 грн
1000+ 6.01 грн
2000+ 5.38 грн
Мінімальне замовлення: 12
1N4730G R0G 1N4730G R0G Taiwan Semiconductor Corporation Description: DIODE ZENER 3.9V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
товар відсутній
BZT55C51 L0G BZT55C51 L0G Taiwan Semiconductor Corporation Description: DIODE ZENER 51V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 38 V
товар відсутній
BZT55B51 L0G BZT55B51 L0G Taiwan Semiconductor Corporation BZT55B2V4%20SERIES_I2301.pdf Description: DIODE ZENER 51V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 38 V
товар відсутній
BZX55C4V7 A0G BZX55C4V7 A0G Taiwan Semiconductor Corporation BZX55C2V0 SERIES_E2301.pdf Description: DIODE ZENER 4.7V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
товар відсутній
TSM2538CQ RFG TSM2538CQ RFG Taiwan Semiconductor Corporation pdf.php?pn=TSM2538CQ (N) Description: MOSFET N/P-CH 20V 5.5A/10A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.89W (Ta), 5W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 10A (Tc), 4.4A (Ta), 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 534pF @ 10V, 909pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 4.5V, 70mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, 9.4nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+14.78 грн
6000+ 13.51 грн
9000+ 12.55 грн
Мінімальне замовлення: 3000
TSM2538CQ RFG TSM2538CQ RFG Taiwan Semiconductor Corporation pdf.php?pn=TSM2538CQ (N) Description: MOSFET N/P-CH 20V 5.5A/10A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.89W (Ta), 5W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 10A (Tc), 4.4A (Ta), 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 534pF @ 10V, 909pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 4.5V, 70mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, 9.4nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
на замовлення 11890 шт:
термін постачання 21-31 дні (днів)
7+43.72 грн
10+ 36.08 грн
100+ 25.09 грн
500+ 18.38 грн
1000+ 14.94 грн
Мінімальне замовлення: 7
BZV55C2V4 L0G BZV55C2V4 L0G Taiwan Semiconductor Corporation BZV55C2V4 SERIES_H2301.pdf Description: DIODE ZENER 2.4V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
товар відсутній
1N5237B A0G 1N5237B A0G Taiwan Semiconductor Corporation 1N5221B%20SERIES_G1804.pdf Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
товар відсутній
5.0SMDJ22AH 5.0SMDJ22AH Taiwan Semiconductor Corporation 5.0SMDJH SERIES_A2102.pdf Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+68.62 грн
Мінімальне замовлення: 3000
5.0SMDJ22AH 5.0SMDJ22AH Taiwan Semiconductor Corporation 5.0SMDJH SERIES_A2102.pdf Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
на замовлення 3020 шт:
термін постачання 21-31 дні (днів)
2+152.28 грн
10+ 121.74 грн
Мінімальне замовлення: 2
SMDJ22AH SMDJ22AH Taiwan Semiconductor Corporation pdf.php?pn=SMDJ22AH Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
5.0SMDJ22A 5.0SMDJ22A Taiwan Semiconductor Corporation pdf.php?pn=5.0SMDJ22A Description: 5000W, 25.7V, 5%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
SMDJ22A M6G SMDJ22A M6G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товар відсутній
SMDJ22AHM6G SMDJ22AHM6G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMDJ22A R7G SMDJ22A R7G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товар відсутній
SMDJ22AHR7G SMDJ22AHR7G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMDJ22A V7G SMDJ22A V7G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товар відсутній
SMDJ22A R6G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 3000W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товар відсутній
SMDJ22A R6 Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 3000W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товар відсутній
SMDJ22A R7 Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 3000W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товар відсутній
P4SMA16H P4SMA16H Taiwan Semiconductor Corporation P4SMAH SERIES_A2102.pdf Description: 400W, 16V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.8A
Voltage - Reverse Standoff (Typ): 12.9V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 23.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
P4SMA160H P4SMA160H Taiwan Semiconductor Corporation P4SMAH SERIES_A2102.pdf Description: 400W, 160V, 5%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 230V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
P4SMA160 P4SMA160 Taiwan Semiconductor Corporation P4SMA SERIES_S2102.pdf Description: 400W, 160V, 5%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 230V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4SMA16 P4SMA16 Taiwan Semiconductor Corporation P4SMA SERIES_S2102.pdf Description: 400W, 16V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.8A
Voltage - Reverse Standoff (Typ): 12.9V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 23.5V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
MUR160 MUR160 Taiwan Semiconductor Corporation MUR160 SERIES_L2107.pdf Description: DIODE GEN PURP 600V 1A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
1.5KE13A 1.5KE13A Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: TVS 1500W 13.1V 5% UNIDIR DO-201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
S2MA S2MA Taiwan Semiconductor Corporation S2AA SERIES_K2102.pdf Description: DIODE GEN PURP 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
7500+3.98 грн
15000+ 3.31 грн
Мінімальне замовлення: 7500
S2MA S2MA Taiwan Semiconductor Corporation S2AA SERIES_K2102.pdf Description: DIODE GEN PURP 1KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 21327 шт:
термін постачання 21-31 дні (днів)
14+22.62 грн
19+ 15.61 грн
100+ 7.87 грн
500+ 6.03 грн
1000+ 4.47 грн
2000+ 3.76 грн
Мінімальне замовлення: 14
S2MALH S2MALH Taiwan Semiconductor Corporation S2DALH%20SERIES_B2103.pdf Description: 2A, 1000V, STANDARD RECOVERY REC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товар відсутній
S2MAF-T S2MAF-T Taiwan Semiconductor Corporation S2DAF-T%20SERIES_B2103.pdf Description: 2A, 1000V, STANDARD RECOVERY REC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
TS15P04G TS15P04G Taiwan Semiconductor Corporation TS15P01G%20SERIES_N2203.pdf Description: BRIDGE RECT 1P 400V 15A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
TS15P04GH TS15P04GH Taiwan Semiconductor Corporation TS15P01G%20SERIES_N2203.pdf Description: BRIDGE RECT 1P 400V 15A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
TSM150P04LCS Taiwan Semiconductor Corporation TSM150P04LCS_C2212.pdf Description: -40, -22, SINGLE P-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Power Dissipation (Max): 2.2W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2783 pF @ 20 V
товар відсутній
LL4448 L0G LL4448 L0G Taiwan Semiconductor Corporation LL4148 SERIES_K2301.pdf Description: DIODE GP 75V 150MA MINI MELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 19955 шт:
термін постачання 21-31 дні (днів)
34+9.05 грн
48+ 6.17 грн
100+ 3.31 грн
500+ 2.44 грн
1000+ 1.69 грн
2000+ 1.4 грн
5000+ 1.31 грн
Мінімальне замовлення: 34
TSF10U60C TSF10U60C Taiwan Semiconductor Corporation TSF10U60C_F2105.pdf Description: DIODE ARRAY SCHOTT 60V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
3+144.74 грн
Мінімальне замовлення: 3
1.5KE350H 1.5KE350H Taiwan Semiconductor Corporation Description: 1500W, 350V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 284V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 315V
Voltage - Clamping (Max) @ Ipp: 504V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1.5KE350C 1.5KE350C Taiwan Semiconductor Corporation Description: 1500W, 350V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 284V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 315V
Voltage - Clamping (Max) @ Ipp: 504V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
GBU606 GBU606 Taiwan Semiconductor Corporation GBU601 SERIES_N2103.pdf Description: BRIDGE RECT 1PHASE 800V 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 177 шт:
термін постачання 21-31 дні (днів)
4+75.39 грн
20+ 59.02 грн
100+ 45.92 грн
Мінімальне замовлення: 4
BZX85C33 R0G BZX85C33 R0G Taiwan Semiconductor Corporation BZX85C3V3 SERIES_H2301.pdf Description: DIODE ZENER 33V 1.3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 24 V
товар відсутній
BZX85C33 A0G BZX85C33 A0G Taiwan Semiconductor Corporation BZX85C3V3%20SERIES_G1606.pdf Description: DIODE ZENER 33V 1.3W DO204AL
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 24 V
товар відсутній
TSM2309CX TSM2309CX Taiwan Semiconductor Corporation Description: -60V, -3.1A, SINGLE P-CHANNEL PO
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V
товар відсутній
MBRAD5200H MBRAD5200H Taiwan Semiconductor Corporation MBRAD5200H_A2303.pdf Description: 5A, 200V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
MBRAD5200H MBRAD5200H Taiwan Semiconductor Corporation MBRAD5200H_A2303.pdf Description: 5A, 200V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 4415 шт:
термін постачання 21-31 дні (днів)
7+49 грн
10+ 40.94 грн
100+ 28.32 грн
500+ 22.21 грн
1000+ 18.9 грн
2000+ 16.83 грн
Мінімальне замовлення: 7
MBRAD15150DH MBRAD15150DH Taiwan Semiconductor Corporation MBRAD15150DH_A2303.pdf Description: DIODE ARR SCHOTT 150V THINDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
MBRAD15150DH MBRAD15150DH Taiwan Semiconductor Corporation MBRAD15150DH_A2303.pdf Description: DIODE ARR SCHOTT 150V THINDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4496 шт:
термін постачання 21-31 дні (днів)
6+58.05 грн
10+ 48.93 грн
100+ 33.87 грн
500+ 26.56 грн
1000+ 22.61 грн
2000+ 20.13 грн
Мінімальне замовлення: 6
MBRAD15150H MBRAD15150H Taiwan Semiconductor Corporation MBRAD15150H_A2303.pdf Description: 15A, 150V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 291pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
4500+24.2 грн
Мінімальне замовлення: 4500
MBRAD15150H MBRAD15150H Taiwan Semiconductor Corporation MBRAD15150H_A2303.pdf Description: 15A, 150V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 291pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
5+64.08 грн
10+ 53.14 грн
100+ 36.8 грн
500+ 28.85 грн
1000+ 24.56 грн
2000+ 21.87 грн
Мінімальне замовлення: 5
BZT52C10 BZT52C10 Taiwan Semiconductor Corporation BZT52C2V4%20SERIES_G1804.pdf Description: SOD-123F, 500MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 180 nA @ 7 V
товар відсутній
BZT52C10-G BZT52C10-G Taiwan Semiconductor Corporation BZT52C2V4-G%20SERIES_C2007.pdf Description: SOD-123, 350MW, 5%, SMALL SIGNAL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
товар відсутній
BZT52C10K BZT52C10K Taiwan Semiconductor Corporation BZT52C2V7K%20SERIES_G2402.pdf Description: SOD-523F, 200MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
товар відсутній
BZT52C12K BZT52C12K Taiwan Semiconductor Corporation BZT52C2V7K%20SERIES_G2402.pdf Description: SOD-523F, 200MW, 5%, SMALL SIGNA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
товар відсутній
BZT52C12S BZT52C12S Taiwan Semiconductor Corporation BZT52C2V4S%20SERIES_J2212.pdf Description: SOD-323F, 200MW, 5%, SMALL SIGNA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
товар відсутній
HT18GH
HT18GH
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+5.72 грн
Мінімальне замовлення: 5000
HT14GH
HT14GH
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 300V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+5.72 грн
Мінімальне замовлення: 5000
HT15GH
HT15GH
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+5.72 грн
Мінімальне замовлення: 5000
HT16GH
HT16GH
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 600V, HIGH EFFICIENT R
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+5.72 грн
Мінімальне замовлення: 5000
SRT115H pdf.php?pn=SRT115
SRT115H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 1A TS-1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
SFT15GH
SFT15GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A TS-1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
товар відсутній
SFT18GH
SFT18GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A TS-1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+6.74 грн
Мінімальне замовлення: 5000
ES1JH ES1AH SERIES_B2112.pdf
ES1JH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+26.39 грн
16+ 18.44 грн
100+ 9.28 грн
500+ 7.72 грн
1000+ 6.01 грн
2000+ 5.38 грн
Мінімальне замовлення: 12
1N4730G R0G
1N4730G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
товар відсутній
BZT55C51 L0G
BZT55C51 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 38 V
товар відсутній
BZT55B51 L0G BZT55B2V4%20SERIES_I2301.pdf
BZT55B51 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 38 V
товар відсутній
BZX55C4V7 A0G BZX55C2V0 SERIES_E2301.pdf
BZX55C4V7 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
товар відсутній
TSM2538CQ RFG pdf.php?pn=TSM2538CQ (N)
TSM2538CQ RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 20V 5.5A/10A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.89W (Ta), 5W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 10A (Tc), 4.4A (Ta), 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 534pF @ 10V, 909pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 4.5V, 70mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, 9.4nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+14.78 грн
6000+ 13.51 грн
9000+ 12.55 грн
Мінімальне замовлення: 3000
TSM2538CQ RFG pdf.php?pn=TSM2538CQ (N)
TSM2538CQ RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 20V 5.5A/10A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.89W (Ta), 5W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 10A (Tc), 4.4A (Ta), 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 534pF @ 10V, 909pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 4.5V, 70mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, 9.4nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
на замовлення 11890 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+43.72 грн
10+ 36.08 грн
100+ 25.09 грн
500+ 18.38 грн
1000+ 14.94 грн
Мінімальне замовлення: 7
BZV55C2V4 L0G BZV55C2V4 SERIES_H2301.pdf
BZV55C2V4 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
товар відсутній
1N5237B A0G 1N5221B%20SERIES_G1804.pdf
1N5237B A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
товар відсутній
5.0SMDJ22AH 5.0SMDJH SERIES_A2102.pdf
5.0SMDJ22AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+68.62 грн
Мінімальне замовлення: 3000
5.0SMDJ22AH 5.0SMDJH SERIES_A2102.pdf
5.0SMDJ22AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
на замовлення 3020 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+152.28 грн
10+ 121.74 грн
Мінімальне замовлення: 2
SMDJ22AH pdf.php?pn=SMDJ22AH
SMDJ22AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
5.0SMDJ22A pdf.php?pn=5.0SMDJ22A
5.0SMDJ22A
Виробник: Taiwan Semiconductor Corporation
Description: 5000W, 25.7V, 5%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
SMDJ22A M6G SMDJ%20SERIES_I2104.pdf
SMDJ22A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товар відсутній
SMDJ22AHM6G SMDJH%20SERIES_B2104.pdf
SMDJ22AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMDJ22A R7G SMDJ%20SERIES_I2104.pdf
SMDJ22A R7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товар відсутній
SMDJ22AHR7G SMDJH%20SERIES_B2104.pdf
SMDJ22AHR7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMDJ22A V7G SMDJ%20SERIES_I2104.pdf
SMDJ22A V7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товар відсутній
SMDJ22A R6G SMDJ%20SERIES_I2104.pdf
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 3000W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товар відсутній
SMDJ22A R6 SMDJ%20SERIES_I2104.pdf
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 3000W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товар відсутній
SMDJ22A R7 SMDJ%20SERIES_I2104.pdf
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 3000W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товар відсутній
P4SMA16H P4SMAH SERIES_A2102.pdf
P4SMA16H
Виробник: Taiwan Semiconductor Corporation
Description: 400W, 16V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.8A
Voltage - Reverse Standoff (Typ): 12.9V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 23.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
P4SMA160H P4SMAH SERIES_A2102.pdf
P4SMA160H
Виробник: Taiwan Semiconductor Corporation
Description: 400W, 160V, 5%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 230V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
P4SMA160 P4SMA SERIES_S2102.pdf
P4SMA160
Виробник: Taiwan Semiconductor Corporation
Description: 400W, 160V, 5%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 230V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4SMA16 P4SMA SERIES_S2102.pdf
P4SMA16
Виробник: Taiwan Semiconductor Corporation
Description: 400W, 16V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.8A
Voltage - Reverse Standoff (Typ): 12.9V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 23.5V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
MUR160 MUR160 SERIES_L2107.pdf
MUR160
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
1.5KE13A 1.5KE SERIES_O2104.pdf
1.5KE13A
Виробник: Taiwan Semiconductor Corporation
Description: TVS 1500W 13.1V 5% UNIDIR DO-201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
S2MA S2AA SERIES_K2102.pdf
S2MA
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7500+3.98 грн
15000+ 3.31 грн
Мінімальне замовлення: 7500
S2MA S2AA SERIES_K2102.pdf
S2MA
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 21327 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+22.62 грн
19+ 15.61 грн
100+ 7.87 грн
500+ 6.03 грн
1000+ 4.47 грн
2000+ 3.76 грн
Мінімальне замовлення: 14
S2MALH S2DALH%20SERIES_B2103.pdf
S2MALH
Виробник: Taiwan Semiconductor Corporation
Description: 2A, 1000V, STANDARD RECOVERY REC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товар відсутній
S2MAF-T S2DAF-T%20SERIES_B2103.pdf
S2MAF-T
Виробник: Taiwan Semiconductor Corporation
Description: 2A, 1000V, STANDARD RECOVERY REC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
TS15P04G TS15P01G%20SERIES_N2203.pdf
TS15P04G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 15A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
TS15P04GH TS15P01G%20SERIES_N2203.pdf
TS15P04GH
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 15A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
TSM150P04LCS TSM150P04LCS_C2212.pdf
Виробник: Taiwan Semiconductor Corporation
Description: -40, -22, SINGLE P-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Power Dissipation (Max): 2.2W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2783 pF @ 20 V
товар відсутній
LL4448 L0G LL4148 SERIES_K2301.pdf
LL4448 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 75V 150MA MINI MELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 19955 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
34+9.05 грн
48+ 6.17 грн
100+ 3.31 грн
500+ 2.44 грн
1000+ 1.69 грн
2000+ 1.4 грн
5000+ 1.31 грн
Мінімальне замовлення: 34
TSF10U60C TSF10U60C_F2105.pdf
TSF10U60C
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+144.74 грн
Мінімальне замовлення: 3
1.5KE350H
1.5KE350H
Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 350V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 284V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 315V
Voltage - Clamping (Max) @ Ipp: 504V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1.5KE350C
1.5KE350C
Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 350V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 284V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 315V
Voltage - Clamping (Max) @ Ipp: 504V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
GBU606 GBU601 SERIES_N2103.pdf
GBU606
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 177 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+75.39 грн
20+ 59.02 грн
100+ 45.92 грн
Мінімальне замовлення: 4
BZX85C33 R0G BZX85C3V3 SERIES_H2301.pdf
BZX85C33 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1.3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 24 V
товар відсутній
BZX85C33 A0G BZX85C3V3%20SERIES_G1606.pdf
BZX85C33 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1.3W DO204AL
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 24 V
товар відсутній
TSM2309CX
TSM2309CX
Виробник: Taiwan Semiconductor Corporation
Description: -60V, -3.1A, SINGLE P-CHANNEL PO
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 30 V
товар відсутній
MBRAD5200H MBRAD5200H_A2303.pdf
MBRAD5200H
Виробник: Taiwan Semiconductor Corporation
Description: 5A, 200V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
MBRAD5200H MBRAD5200H_A2303.pdf
MBRAD5200H
Виробник: Taiwan Semiconductor Corporation
Description: 5A, 200V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 4415 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+49 грн
10+ 40.94 грн
100+ 28.32 грн
500+ 22.21 грн
1000+ 18.9 грн
2000+ 16.83 грн
Мінімальне замовлення: 7
MBRAD15150DH MBRAD15150DH_A2303.pdf
MBRAD15150DH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V THINDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
MBRAD15150DH MBRAD15150DH_A2303.pdf
MBRAD15150DH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V THINDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4496 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+58.05 грн
10+ 48.93 грн
100+ 33.87 грн
500+ 26.56 грн
1000+ 22.61 грн
2000+ 20.13 грн
Мінімальне замовлення: 6
MBRAD15150H MBRAD15150H_A2303.pdf
MBRAD15150H
Виробник: Taiwan Semiconductor Corporation
Description: 15A, 150V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 291pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4500+24.2 грн
Мінімальне замовлення: 4500
MBRAD15150H MBRAD15150H_A2303.pdf
MBRAD15150H
Виробник: Taiwan Semiconductor Corporation
Description: 15A, 150V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 291pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+64.08 грн
10+ 53.14 грн
100+ 36.8 грн
500+ 28.85 грн
1000+ 24.56 грн
2000+ 21.87 грн
Мінімальне замовлення: 5
BZT52C10 BZT52C2V4%20SERIES_G1804.pdf
BZT52C10
Виробник: Taiwan Semiconductor Corporation
Description: SOD-123F, 500MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 180 nA @ 7 V
товар відсутній
BZT52C10-G BZT52C2V4-G%20SERIES_C2007.pdf
BZT52C10-G
Виробник: Taiwan Semiconductor Corporation
Description: SOD-123, 350MW, 5%, SMALL SIGNAL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
товар відсутній
BZT52C10K BZT52C2V7K%20SERIES_G2402.pdf
BZT52C10K
Виробник: Taiwan Semiconductor Corporation
Description: SOD-523F, 200MW, 5%, SMALL SIGNA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
товар відсутній
BZT52C12K BZT52C2V7K%20SERIES_G2402.pdf
BZT52C12K
Виробник: Taiwan Semiconductor Corporation
Description: SOD-523F, 200MW, 5%, SMALL SIGNA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
товар відсутній
BZT52C12S BZT52C2V4S%20SERIES_J2212.pdf
BZT52C12S
Виробник: Taiwan Semiconductor Corporation
Description: SOD-323F, 200MW, 5%, SMALL SIGNA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
товар відсутній
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