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RS1JLW RS1JLW Taiwan Semiconductor Corporation RS1DLW SERIES_C2103.pdf Description: DIODE GEN PURP 600V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 20888 шт:
термін постачання 21-31 дні (днів)
12+26.39 грн
17+ 17.28 грн
100+ 8.42 грн
500+ 6.59 грн
1000+ 4.58 грн
2000+ 3.97 грн
5000+ 3.62 грн
Мінімальне замовлення: 12
DBLS208GH DBLS208GH Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 1.2KV 2A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+17.97 грн
3000+ 15.41 грн
Мінімальне замовлення: 1500
HER302G HER302G Taiwan Semiconductor Corporation HER301G SERIES_I2105.pdf Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
P6KE75AH P6KE75AH Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 64.1VWM 103VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 64.1V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMBJ48CAH SMBJ48CAH Taiwan Semiconductor Corporation SMBJH SERIES_A2102.pdf Description: TVS DIODE 48VWM 77.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.1A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
P6SMB200CAH P6SMB200CAH Taiwan Semiconductor Corporation Description: TVS DIODE 171VWM 274VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMBJ12CAH SMBJ12CAH Taiwan Semiconductor Corporation SMBJH SERIES_A2102.pdf Description: TVS DIODE 12VWM 19.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
ABS2 RGG ABS2 RGG Taiwan Semiconductor Corporation ABS2%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 200V 800MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 800 mA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
ABS2 REG ABS2 REG Taiwan Semiconductor Corporation ABS2%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 200V 800MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 800 mA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
ABS2HRGG ABS2HRGG Taiwan Semiconductor Corporation ABS2%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 200V 800MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 800 mA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
ABS2HREG ABS2HREG Taiwan Semiconductor Corporation ABS2%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 200V 800MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 800 mA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
P6SMB82CAH P6SMB82CAH Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 70.1VWM 113VC DO214AA
товар відсутній
1KSMB82A 1KSMB82A Taiwan Semiconductor Corporation Description: TVS DIODE 70.1VWM 113VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
товар відсутній
1KSMB82CA R5G 1KSMB82CA R5G Taiwan Semiconductor Corporation 1KSMB SERIES_A2102.pdf Description: TVS DIODE 70.1VWM 113VC DO214AA
товар відсутній
1KSMB82CAH 1KSMB82CAH Taiwan Semiconductor Corporation Description: TVS DIODE 70.1VWM 113VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1KSMB82AH 1KSMB82AH Taiwan Semiconductor Corporation Description: TVS DIODE 70.1VWM 113VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
P6SMB82AH P6SMB82AH Taiwan Semiconductor Corporation Description: TVS DIODE 70.1VWM 113VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1KSMB82A R5G 1KSMB82A R5G Taiwan Semiconductor Corporation 1KSMB SERIES_A2102.pdf Description: TVS DIODE 70.1VWM 113VC DO214AA
товар відсутній
TESDL5V0B12P1Q0 M7G TESDL5V0B12P1Q0 M7G Taiwan Semiconductor Corporation TESDL5V0B12P1Q0_A2203.pdf Description: DFN0603-2L, 5V, 70W, 9PF, ESD PR
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecom
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN0603-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.1V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
товар відсутній
TESDL5V0B12P1Q0 M7G TESDL5V0B12P1Q0 M7G Taiwan Semiconductor Corporation TESDL5V0B12P1Q0_A2203.pdf Description: DFN0603-2L, 5V, 70W, 9PF, ESD PR
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecom
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN0603-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.1V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
на замовлення 9942 шт:
термін постачання 21-31 дні (днів)
14+21.86 грн
21+ 14.3 грн
100+ 6.98 грн
500+ 5.46 грн
1000+ 3.8 грн
2000+ 3.29 грн
5000+ 3 грн
Мінімальне замовлення: 14
PU2BLSH PU2BLSH Taiwan Semiconductor Corporation PU2BLSH SERIES_B2109.pdf Description: DIODE GEN PURP 100V 2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+5.34 грн
Мінімальне замовлення: 10000
PU2BLSH PU2BLSH Taiwan Semiconductor Corporation PU2BLSH SERIES_B2109.pdf Description: DIODE GEN PURP 100V 2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 19725 шт:
термін постачання 21-31 дні (днів)
13+24.88 грн
16+ 18.73 грн
100+ 11.22 грн
500+ 9.75 грн
1000+ 6.63 грн
2000+ 6.1 грн
5000+ 5.75 грн
Мінімальне замовлення: 13
P6KE11AH P6KE11AH Taiwan Semiconductor Corporation P6KE%20SERIES_P2203.pdf Description: TVS DIODE 9.4VWM 15.6VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
SS14LS SS14LS Taiwan Semiconductor Corporation SS12LS SERIES_D2212.pdf Description: DIODE SCHOTTKY 40V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
на замовлення 52000 шт:
термін постачання 21-31 дні (днів)
10000+3.54 грн
30000+ 3.35 грн
50000+ 2.77 грн
Мінімальне замовлення: 10000
SS14LS SS14LS Taiwan Semiconductor Corporation SS12LS SERIES_D2212.pdf Description: DIODE SCHOTTKY 40V 1A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
на замовлення 61836 шт:
термін постачання 21-31 дні (днів)
13+24.12 грн
19+ 16.04 грн
100+ 8.1 грн
500+ 6.2 грн
1000+ 4.6 грн
2000+ 3.87 грн
5000+ 3.64 грн
Мінімальне замовлення: 13
SMBJ100AH SMBJ100AH Taiwan Semiconductor Corporation SMBJH SERIES_A2102.pdf Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.8A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
HER1607G HER1607G Taiwan Semiconductor Corporation pdf.php?pn=HER1607G Description: DIODE ARRAY GP 800V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
HER1608G HER1608G Taiwan Semiconductor Corporation HER1601G SERIES_J2104.pdf Description: DIODE ARRAY GP 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
4+75.39 грн
50+ 57.95 грн
100+ 45.92 грн
500+ 36.53 грн
1000+ 29.75 грн
Мінімальне замовлення: 4
HER1608PT HER1608PT Taiwan Semiconductor Corporation HER1601PT SERIES_H2103.pdf Description: DIODE ARRAY GP 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
3+125.9 грн
50+ 97.13 грн
100+ 79.91 грн
500+ 63.46 грн
Мінімальне замовлення: 3
TSM10N06CP ROG TSM10N06CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
товар відсутній
TSM10N06CP ROG TSM10N06CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
товар відсутній
1.5SMC82CA M6 1.5SMC82CA M6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
HER105G HER105G Taiwan Semiconductor Corporation HER101G SERIES_L2104.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+4.06 грн
Мінімальне замовлення: 5000
HER155G HER155G Taiwan Semiconductor Corporation HER151G SERIES_I2105.pdf Description: DIODE GEN PURP 400V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
3500+6.69 грн
Мінімальне замовлення: 3500
HER154G HER154G Taiwan Semiconductor Corporation HER151G SERIES_I2105.pdf Description: DIODE GEN PURP 300V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
HER156G HER156G Taiwan Semiconductor Corporation HER151G SERIES_I2105.pdf Description: DIODE GEN PURP 600V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
3500+6.69 грн
Мінімальне замовлення: 3500
ESH3C ESH3C Taiwan Semiconductor Corporation ESH3B%20SERIES_I2102.pdf Description: DIODE GEN PURP 150V 3A DO214AB
товар відсутній
ESH3C R6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 3A DO214AB
товар відсутній
ESH3C R6G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 3A DO214AB
товар відсутній
ESH3C M6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 3A DO214AB
товар відсутній
ESH3C R7 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 3A DO214AB
товар відсутній
SR1660 SR1660 Taiwan Semiconductor Corporation pdf.php?pn=SR1660 Description: DIODE ARR SCHOTT 60V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товар відсутній
SR1660PT C0G SR1660PT C0G Taiwan Semiconductor Corporation SR1620PT%20SERIES_J2103.pdf Description: DIODE ARR SCHOTT 60V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товар відсутній
SR1660PTH SR1660PTH Taiwan Semiconductor Corporation pdf.php?pn=SR1660PT Description: DIODE ARR SCHOTT 60V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
SR1660HC0G SR1660HC0G Taiwan Semiconductor Corporation SR1620%20SERIES_J2104.pdf Description: DIODE ARR SCHOTT 60V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
UF1DLW RVG UF1DLW RVG Taiwan Semiconductor Corporation UF1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+11.62 грн
6000+ 10.51 грн
Мінімальне замовлення: 3000
UF1DLW RVG UF1DLW RVG Taiwan Semiconductor Corporation UF1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 11518 шт:
термін постачання 21-31 дні (днів)
8+40.71 грн
10+ 31.87 грн
100+ 21.69 грн
500+ 15.27 грн
1000+ 11.45 грн
Мінімальне замовлення: 8
UF1DLWHRVG UF1DLWHRVG Taiwan Semiconductor Corporation UF1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A SOD123W
товар відсутній
UF1DLWHRVG UF1DLWHRVG Taiwan Semiconductor Corporation UF1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A SOD123W
товар відсутній
SFT14G SFT14G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1A 200V TS-1
товар відсутній
SFT14G SFT14G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1A 200V TS-1
товар відсутній
SFT14G A0G SFT14G A0G Taiwan Semiconductor Corporation SFT11G%20SERIES_J2104.pdf Description: DIODE GEN PURP 200V 1A TS-1
товар відсутній
SFT14GHA0G SFT14GHA0G Taiwan Semiconductor Corporation SFT11G%20SERIES_J2104.pdf Description: DIODE GEN PURP 200V 1A TS-1
товар відсутній
SFT14GHA1G SFT14GHA1G Taiwan Semiconductor Corporation SFT11G%20SERIES_J2104.pdf Description: DIODE GEN PURP 200V 1A TS-1
товар відсутній
SFT14GH SFT14GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A TS-1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+5.67 грн
Мінімальне замовлення: 5000
SFT14G A1G SFT14G A1G Taiwan Semiconductor Corporation SFT11G%20SERIES_J2104.pdf Description: DIODE GEN PURP 200V 1A TS-1
товар відсутній
SF14GH SF14GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+5.81 грн
Мінімальне замовлення: 5000
ES1LDHR3G ES1LDHR3G Taiwan Semiconductor Corporation ES1LD%20SERIES_B2102.pdf Description: DIODE GEN PURP 200V 1A DO214AC
товар відсутній
1SMB5940 1SMB5940 Taiwan Semiconductor Corporation 1SMB5926 SERIES_M2102.pdf Description: DIODE ZENER 43V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 53 Ohms
Supplier Device Package: DO-214AA (SMB)
Part Status: Active
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
товар відсутній
1SMB5940H 1SMB5940H Taiwan Semiconductor Corporation 1SMB5926H SERIES_A2102.pdf Description: DIODE ZENER 43V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 53 Ohms
Supplier Device Package: DO-214AA (SMB)
Part Status: Active
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
RS1JLW RS1DLW SERIES_C2103.pdf
RS1JLW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 20888 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+26.39 грн
17+ 17.28 грн
100+ 8.42 грн
500+ 6.59 грн
1000+ 4.58 грн
2000+ 3.97 грн
5000+ 3.62 грн
Мінімальне замовлення: 12
DBLS208GH
DBLS208GH
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1.2KV 2A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+17.97 грн
3000+ 15.41 грн
Мінімальне замовлення: 1500
HER302G HER301G SERIES_I2105.pdf
HER302G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
P6KE75AH P6KE SERIES_P2203.pdf
P6KE75AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 64.1V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMBJ48CAH SMBJH SERIES_A2102.pdf
SMBJ48CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.1A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
P6SMB200CAH
P6SMB200CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 171VWM 274VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMBJ12CAH SMBJH SERIES_A2102.pdf
SMBJ12CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 12VWM 19.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
ABS2 RGG ABS2%20SERIES_M2103.pdf
ABS2 RGG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 800MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 800 mA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
ABS2 REG ABS2%20SERIES_M2103.pdf
ABS2 REG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 800MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 800 mA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
ABS2HRGG ABS2%20SERIES_M2103.pdf
ABS2HRGG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 800MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 800 mA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
ABS2HREG ABS2%20SERIES_M2103.pdf
ABS2HREG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 800MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 800 mA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
P6SMB82CAH P6SMB%20SERIES_P2102.pdf
P6SMB82CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO214AA
товар відсутній
1KSMB82A
1KSMB82A
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
товар відсутній
1KSMB82CA R5G 1KSMB SERIES_A2102.pdf
1KSMB82CA R5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO214AA
товар відсутній
1KSMB82CAH
1KSMB82CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1KSMB82AH
1KSMB82AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
P6SMB82AH
P6SMB82AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1KSMB82A R5G 1KSMB SERIES_A2102.pdf
1KSMB82A R5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO214AA
товар відсутній
TESDL5V0B12P1Q0 M7G TESDL5V0B12P1Q0_A2203.pdf
TESDL5V0B12P1Q0 M7G
Виробник: Taiwan Semiconductor Corporation
Description: DFN0603-2L, 5V, 70W, 9PF, ESD PR
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecom
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN0603-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.1V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
товар відсутній
TESDL5V0B12P1Q0 M7G TESDL5V0B12P1Q0_A2203.pdf
TESDL5V0B12P1Q0 M7G
Виробник: Taiwan Semiconductor Corporation
Description: DFN0603-2L, 5V, 70W, 9PF, ESD PR
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecom
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN0603-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.1V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
на замовлення 9942 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+21.86 грн
21+ 14.3 грн
100+ 6.98 грн
500+ 5.46 грн
1000+ 3.8 грн
2000+ 3.29 грн
5000+ 3 грн
Мінімальне замовлення: 14
PU2BLSH PU2BLSH SERIES_B2109.pdf
PU2BLSH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+5.34 грн
Мінімальне замовлення: 10000
PU2BLSH PU2BLSH SERIES_B2109.pdf
PU2BLSH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 19725 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+24.88 грн
16+ 18.73 грн
100+ 11.22 грн
500+ 9.75 грн
1000+ 6.63 грн
2000+ 6.1 грн
5000+ 5.75 грн
Мінімальне замовлення: 13
P6KE11AH P6KE%20SERIES_P2203.pdf
P6KE11AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9.4VWM 15.6VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
SS14LS SS12LS SERIES_D2212.pdf
SS14LS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
на замовлення 52000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+3.54 грн
30000+ 3.35 грн
50000+ 2.77 грн
Мінімальне замовлення: 10000
SS14LS SS12LS SERIES_D2212.pdf
SS14LS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
на замовлення 61836 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+24.12 грн
19+ 16.04 грн
100+ 8.1 грн
500+ 6.2 грн
1000+ 4.6 грн
2000+ 3.87 грн
5000+ 3.64 грн
Мінімальне замовлення: 13
SMBJ100AH SMBJH SERIES_A2102.pdf
SMBJ100AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.8A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
HER1607G pdf.php?pn=HER1607G
HER1607G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 800V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
HER1608G HER1601G SERIES_J2104.pdf
HER1608G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+75.39 грн
50+ 57.95 грн
100+ 45.92 грн
500+ 36.53 грн
1000+ 29.75 грн
Мінімальне замовлення: 4
HER1608PT HER1601PT SERIES_H2103.pdf
HER1608PT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+125.9 грн
50+ 97.13 грн
100+ 79.91 грн
500+ 63.46 грн
Мінімальне замовлення: 3
TSM10N06CP ROG
TSM10N06CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
товар відсутній
TSM10N06CP ROG
TSM10N06CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
товар відсутній
1.5SMC82CA M6
1.5SMC82CA M6
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
HER105G HER101G SERIES_L2104.pdf
HER105G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+4.06 грн
Мінімальне замовлення: 5000
HER155G HER151G SERIES_I2105.pdf
HER155G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3500+6.69 грн
Мінімальне замовлення: 3500
HER154G HER151G SERIES_I2105.pdf
HER154G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
HER156G HER151G SERIES_I2105.pdf
HER156G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3500+6.69 грн
Мінімальне замовлення: 3500
ESH3C ESH3B%20SERIES_I2102.pdf
ESH3C
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 3A DO214AB
товар відсутній
ESH3C R6
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
товар відсутній
ESH3C R6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
товар відсутній
ESH3C M6
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
товар відсутній
ESH3C R7
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
товар відсутній
SR1660 pdf.php?pn=SR1660
SR1660
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товар відсутній
SR1660PT C0G SR1620PT%20SERIES_J2103.pdf
SR1660PT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товар відсутній
SR1660PTH pdf.php?pn=SR1660PT
SR1660PTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
SR1660HC0G SR1620%20SERIES_J2104.pdf
SR1660HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
UF1DLW RVG UF1DLW%20SERIES_C2103.pdf
UF1DLW RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+11.62 грн
6000+ 10.51 грн
Мінімальне замовлення: 3000
UF1DLW RVG UF1DLW%20SERIES_C2103.pdf
UF1DLW RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 11518 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+40.71 грн
10+ 31.87 грн
100+ 21.69 грн
500+ 15.27 грн
1000+ 11.45 грн
Мінімальне замовлення: 8
UF1DLWHRVG UF1DLW%20SERIES_C2103.pdf
UF1DLWHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
товар відсутній
UF1DLWHRVG UF1DLW%20SERIES_C2103.pdf
UF1DLWHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
товар відсутній
SFT14G
SFT14G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A 200V TS-1
товар відсутній
SFT14G
SFT14G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A 200V TS-1
товар відсутній
SFT14G A0G SFT11G%20SERIES_J2104.pdf
SFT14G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
товар відсутній
SFT14GHA0G SFT11G%20SERIES_J2104.pdf
SFT14GHA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
товар відсутній
SFT14GHA1G SFT11G%20SERIES_J2104.pdf
SFT14GHA1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
товар відсутній
SFT14GH
SFT14GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+5.67 грн
Мінімальне замовлення: 5000
SFT14G A1G SFT11G%20SERIES_J2104.pdf
SFT14G A1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
товар відсутній
SF14GH
SF14GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+5.81 грн
Мінімальне замовлення: 5000
ES1LDHR3G ES1LD%20SERIES_B2102.pdf
ES1LDHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
товар відсутній
1SMB5940 1SMB5926 SERIES_M2102.pdf
1SMB5940
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 53 Ohms
Supplier Device Package: DO-214AA (SMB)
Part Status: Active
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
товар відсутній
1SMB5940H 1SMB5926H SERIES_A2102.pdf
1SMB5940H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 53 Ohms
Supplier Device Package: DO-214AA (SMB)
Part Status: Active
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
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