Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (23456) > Сторінка 212 з 391
| Фото | Назва | Виробник | Інформація |
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RS1GLHMHG | Taiwan Semiconductor Corporation |
 Description: DIODE GP 400V 800MA SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
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RS1GLHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GP 400V 800MA SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 400 V Grade: Automotive Qualification: AEC-Q101 |
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RS1GLHRQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 800MA SUBSMA |
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RS1GL M2G | Taiwan Semiconductor Corporation |
Description: DIODE GP 400V 800MA SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
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BZV55B43 L1G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 43V 500MW MINI MELF |
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FR156G B0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1.5A DO204AC |
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FR156G R0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1.5A DO204AC |
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FR156G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1.5A DO204AC |
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FR156GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1.5A DO204AC |
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FR156GHR0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1.5A DO204AC |
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FR156GHB0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1.5A DO204AC |
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TSH188CX RFG | Taiwan Semiconductor Corporation |
Description: MAGNETIC SWITCH SOT23 Features: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Analog Voltage Polarization: South Pole Mounting Type: Surface Mount Function: Latch Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.5V ~ 24V Technology: Hall Effect Sensing Range: ±25mT Trip, ±5mT Release Current - Output (Max): 50mA Current - Supply (Max): 5mA Supplier Device Package: SOT-23 Test Condition: 25°C Part Status: Active |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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TSH188CX RFG | Taiwan Semiconductor Corporation |
Description: MAGNETIC SWITCH SOT23 Features: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Analog Voltage Polarization: South Pole Mounting Type: Surface Mount Function: Latch Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.5V ~ 24V Technology: Hall Effect Sensing Range: ±25mT Trip, ±5mT Release Current - Output (Max): 50mA Current - Supply (Max): 5mA Supplier Device Package: SOT-23 Test Condition: 25°C Part Status: Active |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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TSH193CX RFG | Taiwan Semiconductor Corporation |
Description: MAGNETIC SWITCH SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Latch Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.5V ~ 16V Technology: Hall Effect Sensing Range: 2.5mT Trip, 2.5mT Release Current - Output (Max): 13mA Current - Supply (Max): 5mA Supplier Device Package: SOT-23 Test Condition: 25°C Part Status: Active |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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TSH193CX RFG | Taiwan Semiconductor Corporation |
Description: MAGNETIC SWITCH SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Latch Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.5V ~ 16V Technology: Hall Effect Sensing Range: 2.5mT Trip, 2.5mT Release Current - Output (Max): 13mA Current - Supply (Max): 5mA Supplier Device Package: SOT-23 Test Condition: 25°C Part Status: Active |
на замовлення 20665 шт: термін постачання 21-31 дні (днів) |
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BZX55B51 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 51V 500MW DO35 |
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1.5SMC75A V7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64.1VWM 103VC DO214AB |
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1.5SMC75A V6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64.1VWM 103VC DO214AB |
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1.5SMC75A R6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
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1.5SMC75A M6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64.1VWM 103VC DO214AB |
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1.5SMC75A R7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64.1VWM 103VC DO214AB |
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1.5SMC75A R7 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
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1.5SMC75A M6 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
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1.5SMC75AHM6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64.1VWM 103VC DO214AB |
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| 1.5SMC75AH | Taiwan Semiconductor Corporation | Description: TVS DIODE 64.1VWM 103VC DO214AB |
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1.5SMC75AHR7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64.1VWM 103VC DO214AB |
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1.5SMC75A R6 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
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SS19L | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 90 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SS19L | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 1A SUB SMA Packaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 90 V |
на замовлення 11106 шт: термін постачання 21-31 дні (днів) |
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S1JL R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA |
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S1JL R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A SUB SMA |
на замовлення 866 шт: термін постачання 21-31 дні (днів) |
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S1BL R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1A SUB SMA |
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S1BL R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 1A SUB SMA |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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BZD27C62P RVG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 62V 1W SUB SMA Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 47 V |
на замовлення 7936 шт: термін постачання 21-31 дні (днів) |
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BZD27C62P RVG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 62V 1W SUB SMA Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 47 V |
на замовлення 8506 шт: термін постачання 21-31 дні (днів) |
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PGSMAJ48A F2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 48VWM 77.4VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 5.2A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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PGSMAJ48A R2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 48VWM 77.4VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 5.2A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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PGSMAJ48AHF4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 48VWM 77.4VC DO214AC |
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PGSMAJ48A F4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 48VWM 77.4VC DO214AC |
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PGSMAJ48AHF2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 48VWM 77.4VC DO214AC |
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PGSMAJ48A F3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 48VWM 77.4VC DO214AC |
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PGSMAJ48AHF3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 48VWM 77.4VC DO214AC |
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PGSMAJ48AHR2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 48VWM 77.4VC DO214AC |
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1.5KE6.8AH | Taiwan Semiconductor Corporation |
Description: TVS 1500W 6.8V 5% UNIDIR DO-201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 150A Voltage - Reverse Standoff (Typ): 5.8V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.45V Voltage - Clamping (Max) @ Ipp: 10.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
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FR153GH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
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S10MC V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 10A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
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S10MC V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 10A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
на замовлення 446 шт: термін постачання 21-31 дні (днів) |
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HS2GFS M3G | Taiwan Semiconductor Corporation | Description: 50NS, 2A, 400V, HIGH EFFICIENT R |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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HS2GFS M3G | Taiwan Semiconductor Corporation | Description: 50NS, 2A, 400V, HIGH EFFICIENT R |
на замовлення 6330 шт: термін постачання 21-31 дні (днів) |
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HS2KAL M3G | Taiwan Semiconductor Corporation | Description: 75NS, 2A, 800V, HIGH EFFICIENT R |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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HS2KAL M3G | Taiwan Semiconductor Corporation | Description: 75NS, 2A, 800V, HIGH EFFICIENT R |
на замовлення 6650 шт: термін постачання 21-31 дні (днів) |
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HS2GAL M3G | Taiwan Semiconductor Corporation | Description: 50NS, 2A, 400V, HIGH EFFICIENT R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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HS2GAL M3G | Taiwan Semiconductor Corporation | Description: 50NS, 2A, 400V, HIGH EFFICIENT R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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HS2DFS M3G | Taiwan Semiconductor Corporation | Description: 50NS, 2A, 200V, HIGH EFFICIENT R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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HS2DFS M3G | Taiwan Semiconductor Corporation | Description: 50NS, 2A, 200V, HIGH EFFICIENT R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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HS2JAL M3G | Taiwan Semiconductor Corporation | Description: 75NS, 2A, 600V, HIGH EFFICIENT R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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HS2JAL M3G | Taiwan Semiconductor Corporation | Description: 75NS, 2A, 600V, HIGH EFFICIENT R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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HS2JFS M3G | Taiwan Semiconductor Corporation | Description: 75NS, 2A, 600V, HIGH EFFICIENT R |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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HS2JFS M3G | Taiwan Semiconductor Corporation | Description: 75NS, 2A, 600V, HIGH EFFICIENT R |
на замовлення 6957 шт: термін постачання 21-31 дні (днів) |
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HER3L05G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 54pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товар відсутній |
| RS1GLHMHG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
| RS1GLHR3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| RS1GLHRQG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 800MA SUBSMA
Description: DIODE GEN PURP 400V 800MA SUBSMA
товар відсутній
| RS1GL M2G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
| BZV55B43 L1G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 500MW MINI MELF
Description: DIODE ZENER 43V 500MW MINI MELF
товар відсутній
| FR156G B0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Description: DIODE GEN PURP 800V 1.5A DO204AC
товар відсутній
| FR156G R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Description: DIODE GEN PURP 800V 1.5A DO204AC
товар відсутній
| FR156G A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Description: DIODE GEN PURP 800V 1.5A DO204AC
товар відсутній
| FR156GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Description: DIODE GEN PURP 800V 1.5A DO204AC
товар відсутній
| FR156GHR0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Description: DIODE GEN PURP 800V 1.5A DO204AC
товар відсутній
| FR156GHB0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Description: DIODE GEN PURP 800V 1.5A DO204AC
товар відсутній
| TSH188CX RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH SOT23
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Analog Voltage
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 24V
Technology: Hall Effect
Sensing Range: ±25mT Trip, ±5mT Release
Current - Output (Max): 50mA
Current - Supply (Max): 5mA
Supplier Device Package: SOT-23
Test Condition: 25°C
Part Status: Active
Description: MAGNETIC SWITCH SOT23
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Analog Voltage
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 24V
Technology: Hall Effect
Sensing Range: ±25mT Trip, ±5mT Release
Current - Output (Max): 50mA
Current - Supply (Max): 5mA
Supplier Device Package: SOT-23
Test Condition: 25°C
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 55.82 грн |
| 6000+ | 50.39 грн |
| 9000+ | 47.87 грн |
| TSH188CX RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH SOT23
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Analog Voltage
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 24V
Technology: Hall Effect
Sensing Range: ±25mT Trip, ±5mT Release
Current - Output (Max): 50mA
Current - Supply (Max): 5mA
Supplier Device Package: SOT-23
Test Condition: 25°C
Part Status: Active
Description: MAGNETIC SWITCH SOT23
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Analog Voltage
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 24V
Technology: Hall Effect
Sensing Range: ±25mT Trip, ±5mT Release
Current - Output (Max): 50mA
Current - Supply (Max): 5mA
Supplier Device Package: SOT-23
Test Condition: 25°C
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 139.47 грн |
| 10+ | 100.76 грн |
| 25+ | 80.64 грн |
| 100+ | 69.36 грн |
| 500+ | 58.33 грн |
| 1000+ | 52.02 грн |
| TSH193CX RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 16V
Technology: Hall Effect
Sensing Range: 2.5mT Trip, 2.5mT Release
Current - Output (Max): 13mA
Current - Supply (Max): 5mA
Supplier Device Package: SOT-23
Test Condition: 25°C
Part Status: Active
Description: MAGNETIC SWITCH SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 16V
Technology: Hall Effect
Sensing Range: 2.5mT Trip, 2.5mT Release
Current - Output (Max): 13mA
Current - Supply (Max): 5mA
Supplier Device Package: SOT-23
Test Condition: 25°C
Part Status: Active
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 35.72 грн |
| 6000+ | 32.25 грн |
| 9000+ | 30.63 грн |
| 15000+ | 27.74 грн |
| TSH193CX RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 16V
Technology: Hall Effect
Sensing Range: 2.5mT Trip, 2.5mT Release
Current - Output (Max): 13mA
Current - Supply (Max): 5mA
Supplier Device Package: SOT-23
Test Condition: 25°C
Part Status: Active
Description: MAGNETIC SWITCH SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.5V ~ 16V
Technology: Hall Effect
Sensing Range: 2.5mT Trip, 2.5mT Release
Current - Output (Max): 13mA
Current - Supply (Max): 5mA
Supplier Device Package: SOT-23
Test Condition: 25°C
Part Status: Active
на замовлення 20665 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 88.96 грн |
| 10+ | 64.46 грн |
| 25+ | 51.6 грн |
| 100+ | 44.39 грн |
| 500+ | 37.32 грн |
| 1000+ | 33.29 грн |
| BZX55B51 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 500MW DO35
Description: DIODE ZENER 51V 500MW DO35
товар відсутній
| 1.5SMC75A V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
Description: TVS DIODE 64.1VWM 103VC DO214AB
товар відсутній
| 1.5SMC75A V6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
Description: TVS DIODE 64.1VWM 103VC DO214AB
товар відсутній
| 1.5SMC75A R6G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
| 1.5SMC75A M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
Description: TVS DIODE 64.1VWM 103VC DO214AB
товар відсутній
| 1.5SMC75A R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
Description: TVS DIODE 64.1VWM 103VC DO214AB
товар відсутній
| 1.5SMC75A R7 |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
| 1.5SMC75A M6 |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
| 1.5SMC75AHM6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
Description: TVS DIODE 64.1VWM 103VC DO214AB
товар відсутній
| 1.5SMC75AH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
Description: TVS DIODE 64.1VWM 103VC DO214AB
товар відсутній
| 1.5SMC75AHR7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
Description: TVS DIODE 64.1VWM 103VC DO214AB
товар відсутній
| 1.5SMC75A R6 |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
| SS19L |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
Description: DIODE SCHOTTKY 90V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 5.51 грн |
| SS19L |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
Description: DIODE SCHOTTKY 90V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
на замовлення 11106 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.65 грн |
| 15+ | 19.67 грн |
| 100+ | 9.93 грн |
| 500+ | 8.26 грн |
| 1000+ | 6.43 грн |
| 2000+ | 5.76 грн |
| 5000+ | 5.53 грн |
| S1JL R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Description: DIODE GEN PURP 600V 1A SUB SMA
товар відсутній
| S1JL R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Description: DIODE GEN PURP 600V 1A SUB SMA
на замовлення 866 шт:
термін постачання 21-31 дні (днів)| S1BL R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SUB SMA
Description: DIODE GEN PURP 100V 1A SUB SMA
товар відсутній
| S1BL R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SUB SMA
Description: DIODE GEN PURP 100V 1A SUB SMA
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| BZD27C62P RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 62V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 47 V
Description: DIODE ZENER 62V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 47 V
на замовлення 7936 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.19 грн |
| 6000+ | 6.63 грн |
| BZD27C62P RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 62V 1W SUB SMA
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 47 V
Description: DIODE ZENER 62V 1W SUB SMA
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 47 V
на замовлення 8506 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.39 грн |
| 15+ | 19.89 грн |
| 100+ | 11.94 грн |
| 500+ | 10.37 грн |
| 1000+ | 7.05 грн |
| PGSMAJ48A F2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 48VWM 77.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| PGSMAJ48A R2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 48VWM 77.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| PGSMAJ48AHF4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AC
Description: TVS DIODE 48VWM 77.4VC DO214AC
товар відсутній
| PGSMAJ48A F4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AC
Description: TVS DIODE 48VWM 77.4VC DO214AC
товар відсутній
| PGSMAJ48AHF2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AC
Description: TVS DIODE 48VWM 77.4VC DO214AC
товар відсутній
| PGSMAJ48A F3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AC
Description: TVS DIODE 48VWM 77.4VC DO214AC
товар відсутній
| PGSMAJ48AHF3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AC
Description: TVS DIODE 48VWM 77.4VC DO214AC
товар відсутній
| PGSMAJ48AHR2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AC
Description: TVS DIODE 48VWM 77.4VC DO214AC
товар відсутній
| 1.5KE6.8AH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS 1500W 6.8V 5% UNIDIR DO-201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 150A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS 1500W 6.8V 5% UNIDIR DO-201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 150A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| FR153GH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
| S10MC V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 10A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE GEN PURP 1KV 10A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товар відсутній
| S10MC V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 10A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE GEN PURP 1KV 10A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 446 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.13 грн |
| 10+ | 57.42 грн |
| 100+ | 44.65 грн |
| HS2GFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 2A, 400V, HIGH EFFICIENT R
Description: 50NS, 2A, 400V, HIGH EFFICIENT R
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)| HS2GFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 2A, 400V, HIGH EFFICIENT R
Description: 50NS, 2A, 400V, HIGH EFFICIENT R
на замовлення 6330 шт:
термін постачання 21-31 дні (днів)| HS2KAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 2A, 800V, HIGH EFFICIENT R
Description: 75NS, 2A, 800V, HIGH EFFICIENT R
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)| HS2KAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 2A, 800V, HIGH EFFICIENT R
Description: 75NS, 2A, 800V, HIGH EFFICIENT R
на замовлення 6650 шт:
термін постачання 21-31 дні (днів)| HS2GAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 2A, 400V, HIGH EFFICIENT R
Description: 50NS, 2A, 400V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)| HS2GAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 2A, 400V, HIGH EFFICIENT R
Description: 50NS, 2A, 400V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)| HS2DFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 2A, 200V, HIGH EFFICIENT R
Description: 50NS, 2A, 200V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)| HS2DFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 2A, 200V, HIGH EFFICIENT R
Description: 50NS, 2A, 200V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)| HS2JAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 2A, 600V, HIGH EFFICIENT R
Description: 75NS, 2A, 600V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)| HS2JAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 2A, 600V, HIGH EFFICIENT R
Description: 75NS, 2A, 600V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)| HS2JFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 2A, 600V, HIGH EFFICIENT R
Description: 75NS, 2A, 600V, HIGH EFFICIENT R
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)| HS2JFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 2A, 600V, HIGH EFFICIENT R
Description: 75NS, 2A, 600V, HIGH EFFICIENT R
на замовлення 6957 шт:
термін постачання 21-31 дні (днів)| HER3L05G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній