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HER202G HER202G Taiwan Semiconductor Corporation pdf.php?pn=HER202G Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
HER201G HER201G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
1N5400GH 1N5400GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 50V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
SMCJ33A R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
SA8.0CA R0G SA8.0CA R0G Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0A A0G SA8.0A A0G Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0CAHA0G SA8.0CAHA0G Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0A B0G SA8.0A B0G Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0CA A0G SA8.0CA A0G Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0AHA0G SA8.0AHA0G Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0AHB0G SA8.0AHB0G Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0A R0G SA8.0A R0G Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0CA B0G SA8.0CA B0G Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0CAHR0G SA8.0CAHR0G Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0AHR0G SA8.0AHR0G Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0CAHB0G SA8.0CAHB0G Taiwan Semiconductor Corporation SA%20SERIES_L2105.pdf Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0AH SA8.0AH Taiwan Semiconductor Corporation Description: TVS 500W 9.4V 5% DO-15
товар відсутній
SA8.0CAH SA8.0CAH Taiwan Semiconductor Corporation Description: TVS 500W 9.4V 5% DO-15
товар відсутній
SMDJ30CAH SMDJ30CAH Taiwan Semiconductor Corporation Description: TVS DIODE 30VWM 48.4VC DO214AB
товар відсутній
MUR8L60 Taiwan Semiconductor Corporation MUR8L60_B2103.pdf Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
6+58.8 грн
10+ 48.64 грн
100+ 33.69 грн
500+ 26.42 грн
1000+ 22.48 грн
Мінімальне замовлення: 6
MUR8L60H Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
6+58.8 грн
10+ 48.64 грн
100+ 33.69 грн
500+ 26.42 грн
1000+ 22.48 грн
Мінімальне замовлення: 6
TSSE3U60HRVG TSSE3U60HRVG Taiwan Semiconductor Corporation TSSE3U45%20SERIES_I2103.pdf Description: DIODE SCHOTTKY 60V 3A SOD123HE
товар відсутній
TSSE3U60HRVG TSSE3U60HRVG Taiwan Semiconductor Corporation TSSE3U45%20SERIES_I2103.pdf Description: DIODE SCHOTTKY 60V 3A SOD123HE
на замовлення 530 шт:
термін постачання 21-31 дні (днів)
TSM3443CX6 RFG TSM3443CX6 RFG Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 20V 4.7A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
товар відсутній
TSM3443CX6 RFG TSM3443CX6 RFG Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 20V 4.7A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
на замовлення 3077 шт:
термін постачання 21-31 дні (днів)
14+22.62 грн
16+ 18.73 грн
100+ 12.99 грн
500+ 9.52 грн
1000+ 8.26 грн
Мінімальне замовлення: 14
FR203G FR203G Taiwan Semiconductor Corporation pdf.php?pn=FR203G Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
TSM130NB06LCR TSM130NB06LCR Taiwan Semiconductor Corporation Description: MOSFET N-CH 60V 10A/51A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 30 V
товар відсутній
ZM4753A L0G ZM4753A L0G Taiwan Semiconductor Corporation ZM4728A%20SERIES_D1804.pdf Description: DIODE ZENER 36V 1W MELF
товар відсутній
TLD8S14AH TLD8S14AH Taiwan Semiconductor Corporation TLD8S10AH SERIES_D2103.pdf Description: TVS DIODE 14VWM 23.2VC DO218AB
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
TLD8S14AH TLD8S14AH Taiwan Semiconductor Corporation TLD8S10AH SERIES_D2103.pdf Description: TVS DIODE 14VWM 23.2VC DO218AB
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1.5SMC130A R6G 1.5SMC130A R6G Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
1.5SMC130A R6 1.5SMC130A R6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
1.5SMC130A M6G 1.5SMC130A M6G Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
1.5SMC130A R7G 1.5SMC130A R7G Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
1.5SMC130A M6 1.5SMC130A M6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
1.5SMC130A R7 1.5SMC130A R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
KBU602G KBU602G Taiwan Semiconductor Corporation Description: DIODE BRIDGE 6A 100V KBU
товар відсутній
SS26L RHG SS26L RHG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26L MQG SS26L MQG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26L MHG SS26L MHG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26L RUG SS26L RUG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26L R3G SS26L R3G Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26LHRUG SS26LHRUG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
SS26LHMHG SS26LHMHG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26LHMQG SS26LHMQG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26LHM2G SS26LHM2G Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26L M2G SS26L M2G Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26LHRQG SS26LHRQG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26LHRHG SS26LHRHG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26L RTG SS26L RTG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26L RFG SS26L RFG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26L MTG SS26L MTG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26L RQG SS26L RQG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26LHRTG SS26LHRTG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26LHRFG SS26LHRFG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26LHR3G SS26LHR3G Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26LHMTG SS26LHMTG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
BAS40 RFG BAS40 RFG Taiwan Semiconductor Corporation BAS40%20SERIES_G1702.pdf Description: DIODE SCHOTTKY 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
товар відсутній
BAS40 RFG BAS40 RFG Taiwan Semiconductor Corporation BAS40%20SERIES_G1702.pdf Description: DIODE SCHOTTKY 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
11+27.89 грн
15+ 19.96 грн
100+ 11.29 грн
Мінімальне замовлення: 11
P4KE27CA A0G P4KE27CA A0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 23.1VWM 37.5VC DO204AL
товар відсутній
HER202G pdf.php?pn=HER202G
HER202G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
HER201G
HER201G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
1N5400GH
1N5400GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
SMCJ33A R7
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
SA8.0CA R0G SA%20SERIES_L2105.pdf
SA8.0CA R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0A A0G SA%20SERIES_L2105.pdf
SA8.0A A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0CAHA0G SA%20SERIES_L2105.pdf
SA8.0CAHA0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0A B0G SA%20SERIES_L2105.pdf
SA8.0A B0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0CA A0G SA%20SERIES_L2105.pdf
SA8.0CA A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0AHA0G SA%20SERIES_L2105.pdf
SA8.0AHA0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0AHB0G SA%20SERIES_L2105.pdf
SA8.0AHB0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0A R0G SA%20SERIES_L2105.pdf
SA8.0A R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0CA B0G SA%20SERIES_L2105.pdf
SA8.0CA B0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0CAHR0G SA%20SERIES_L2105.pdf
SA8.0CAHR0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0AHR0G SA%20SERIES_L2105.pdf
SA8.0AHR0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0CAHB0G SA%20SERIES_L2105.pdf
SA8.0CAHB0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC DO204AC
товар відсутній
SA8.0AH
SA8.0AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS 500W 9.4V 5% DO-15
товар відсутній
SA8.0CAH
SA8.0CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS 500W 9.4V 5% DO-15
товар відсутній
SMDJ30CAH
SMDJ30CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AB
товар відсутній
MUR8L60 MUR8L60_B2103.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+58.8 грн
10+ 48.64 грн
100+ 33.69 грн
500+ 26.42 грн
1000+ 22.48 грн
Мінімальне замовлення: 6
MUR8L60H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+58.8 грн
10+ 48.64 грн
100+ 33.69 грн
500+ 26.42 грн
1000+ 22.48 грн
Мінімальне замовлення: 6
TSSE3U60HRVG TSSE3U45%20SERIES_I2103.pdf
TSSE3U60HRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123HE
товар відсутній
TSSE3U60HRVG TSSE3U45%20SERIES_I2103.pdf
TSSE3U60HRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123HE
на замовлення 530 шт:
термін постачання 21-31 дні (днів)
TSM3443CX6 RFG
TSM3443CX6 RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.7A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
товар відсутній
TSM3443CX6 RFG
TSM3443CX6 RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.7A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
на замовлення 3077 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+22.62 грн
16+ 18.73 грн
100+ 12.99 грн
500+ 9.52 грн
1000+ 8.26 грн
Мінімальне замовлення: 14
FR203G pdf.php?pn=FR203G
FR203G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
TSM130NB06LCR
TSM130NB06LCR
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 10A/51A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 30 V
товар відсутній
ZM4753A L0G ZM4728A%20SERIES_D1804.pdf
ZM4753A L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 1W MELF
товар відсутній
TLD8S14AH TLD8S10AH SERIES_D2103.pdf
TLD8S14AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO218AB
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
TLD8S14AH TLD8S10AH SERIES_D2103.pdf
TLD8S14AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 23.2VC DO218AB
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1.5SMC130A R6G
1.5SMC130A R6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
1.5SMC130A R6
1.5SMC130A R6
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
1.5SMC130A M6G
1.5SMC130A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
1.5SMC130A R7G
1.5SMC130A R7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
1.5SMC130A M6
1.5SMC130A M6
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
1.5SMC130A R7
1.5SMC130A R7
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
товар відсутній
KBU602G
KBU602G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 6A 100V KBU
товар відсутній
SS26L RHG SS22L-SS215L_O2103.pdf
SS26L RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26L MQG SS22L-SS215L_O2103.pdf
SS26L MQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26L MHG SS22L-SS215L_O2103.pdf
SS26L MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26L RUG SS22L-SS215L_O2103.pdf
SS26L RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26L R3G SS22L-SS215L_O2103.pdf
SS26L R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26LHRUG SS22L-SS215L_O2103.pdf
SS26LHRUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
SS26LHMHG SS22L-SS215L_O2103.pdf
SS26LHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26LHMQG SS22L-SS215L_O2103.pdf
SS26LHMQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26LHM2G SS22L-SS215L_O2103.pdf
SS26LHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26L M2G SS22L-SS215L_O2103.pdf
SS26L M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26LHRQG SS22L-SS215L_O2103.pdf
SS26LHRQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26LHRHG SS22L-SS215L_O2103.pdf
SS26LHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26L RTG SS22L-SS215L_O2103.pdf
SS26L RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26L RFG SS22L-SS215L_O2103.pdf
SS26L RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26L MTG SS22L-SS215L_O2103.pdf
SS26L MTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26L RQG SS22L-SS215L_O2103.pdf
SS26L RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26LHRTG SS22L-SS215L_O2103.pdf
SS26LHRTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26LHRFG SS22L-SS215L_O2103.pdf
SS26LHRFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26LHR3G SS22L-SS215L_O2103.pdf
SS26LHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
SS26LHMTG SS22L-SS215L_O2103.pdf
SS26LHMTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
товар відсутній
BAS40 RFG BAS40%20SERIES_G1702.pdf
BAS40 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
товар відсутній
BAS40 RFG BAS40%20SERIES_G1702.pdf
BAS40 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+27.89 грн
15+ 19.96 грн
100+ 11.29 грн
Мінімальне замовлення: 11
P4KE27CA A0G P4KE%20SERIES_N2104.pdf
P4KE27CA A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 23.1VWM 37.5VC DO204AL
товар відсутній
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