Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (23679) > Сторінка 119 з 395

Обрати Сторінку:    << Попередня Сторінка ]  1 39 78 114 115 116 117 118 119 120 121 122 123 124 156 195 234 273 312 351 390 395  Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
SR004HB0G SR004HB0G Taiwan Semiconductor Corporation SR002%20SERIES_G15.pdf Description: DIODE SCHOTTKY 40V 500MA DO204AL
товар відсутній
SR103 B0G SR103 B0G Taiwan Semiconductor Corporation SR102%20SERIES_F13.pdf Description: DIODE SCHOTTKY 30V 1A DO204AL
товар відсутній
SR103HB0G SR103HB0G Taiwan Semiconductor Corporation SR102%20SERIES_F13.pdf Description: DIODE SCHOTTKY 30V 1A DO204AL
товар відсутній
SR104 B0G SR104 B0G Taiwan Semiconductor Corporation SR102%20SERIES_G2104.pdf Description: DIODE SCHOTTKY 40V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товар відсутній
SR104HB0G SR104HB0G Taiwan Semiconductor Corporation SR102%20SERIES_G2104.pdf Description: DIODE SCHOTTKY 40V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SR106 B0G SR106 B0G Taiwan Semiconductor Corporation SR102%20SERIES_G2104.pdf Description: DIODE SCHOTTKY 60V 1A DO204AL
товар відсутній
SR106HB0G SR106HB0G Taiwan Semiconductor Corporation SR102%20SERIES_G2104.pdf Description: DIODE SCHOTTKY 60V 1A DO204AL
товар відсутній
SR109 B0G SR109 B0G Taiwan Semiconductor Corporation SR102%20SERIES_F13.pdf Description: DIODE SCHOTTKY 90V 1A DO204AL
товар відсутній
SR109HB0G SR109HB0G Taiwan Semiconductor Corporation SR102%20SERIES_F13.pdf Description: DIODE SCHOTTKY 90V 1A DO204AL
товар відсутній
SR1203 B0G SR1203 B0G Taiwan Semiconductor Corporation SR1202%20SERIES_F13.pdf Description: DIODE SCHOTTKY 30V 12A DO201AD
товар відсутній
SR204 B0G SR204 B0G Taiwan Semiconductor Corporation SR202%20SERIES_L2105.pdf Description: DIODE SCHOTTKY 40V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товар відсутній
SR204HB0G SR204HB0G Taiwan Semiconductor Corporation SR202%20SERIES_L2105.pdf Description: DIODE SCHOTTKY 40V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
товар відсутній
SR220 B0G SR220 B0G Taiwan Semiconductor Corporation SR202%20SERIES_K15.pdf Description: DIODE SCHOTTKY 200V 2A DO204AC
товар відсутній
SR220HB0G SR220HB0G Taiwan Semiconductor Corporation SR202%20SERIES_K15.pdf Description: DIODE SCHOTTKY 200V 2A DO204AC
товар відсутній
SR302 B0G SR302 B0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 20V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
товар відсутній
SR302HB0G SR302HB0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 20V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
товар відсутній
SR304 B0G SR304 B0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 40V 3A DO201AD
товар відсутній
SR304HB0G SR304HB0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 40V 3A DO201AD
товар відсутній
SR306 B0G SR306 B0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товар відсутній
SR306HB0G SR306HB0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SR310 B0G SR310 B0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 100V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
SR310HB0G SR310HB0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 100V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
SR320 B0G SR320 B0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 200V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
SR320HB0G SR320HB0G Taiwan Semiconductor Corporation SR302%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 200V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
SR502 B0G SR502 B0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 20V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
товар відсутній
SR503 B0G SR503 B0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 30V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
товар відсутній
SR504 B0G SR504 B0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 40V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товар відсутній
SR504HB0G SR504HB0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 40V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SR505 B0G SR505 B0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 50V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SR505HB0G SR505HB0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 50V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SR506 B0G SR506 B0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 60V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товар відсутній
SR506HB0G SR506HB0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 60V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SR510 B0G SR510 B0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
SR510HB0G SR510HB0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 100
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SR515 B0G SR515 B0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 150V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
SR515HB0G SR515HB0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 150V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SR520 B0G SR520 B0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 200V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
SR520HB0G SR520HB0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 200V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SR802 B0G SR802 B0G Taiwan Semiconductor Corporation SR802%20SERIES_I13.pdf Description: DIODE SCHOTTKY 20V 8A DO201AD
товар відсутній
SR802HB0G SR802HB0G Taiwan Semiconductor Corporation SR802%20SERIES_I13.pdf Description: DIODE SCHOTTKY 20V 8A DO201AD
товар відсутній
SR809 B0G SR809 B0G Taiwan Semiconductor Corporation SR802%20SERIES_I13.pdf Description: DIODE SCHOTTKY 90V 8A DO201AD
товар відсутній
SR809HB0G SR809HB0G Taiwan Semiconductor Corporation SR802%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 90V 8A DO201AD
товар відсутній
SR810 B0G SR810 B0G Taiwan Semiconductor Corporation SR802%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 100V 8A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
SR810HB0G SR810HB0G Taiwan Semiconductor Corporation SR802%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 100V 8A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
TS13002ACT B0G TS13002ACT B0G Taiwan Semiconductor Corporation TS13002A_VerF15.pdf Description: TRANS NPN 400V 0.3A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 200mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 600 mW
товар відсутній
TS431ACT B0G Taiwan Semiconductor Corporation TS431_VerI2104.pdf Description: IC VREF SHUNT 36V 1% TO92
Packaging: Box
Tolerance: ±1%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
товар відсутній
TS431BCT B0G Taiwan Semiconductor Corporation TS431_VerI2104.pdf Description: IC VREF SHUNT 36V 0.5% TO92
Packaging: Box
Tolerance: ±0.5%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
товар відсутній
TS432ACT B0G Taiwan Semiconductor Corporation Description: IC VREF SHUNT ADJ 1% TO92
Packaging: Box
Tolerance: ±1%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 1.24V
Current - Cathode: 65 µA
Current - Output: 12 mA
Voltage - Output (Max): 10 V
товар відсутній
TS432BCT B0G Taiwan Semiconductor Corporation Description: IC VREF SHUNT ADJ 1% TO92
Packaging: Box
Tolerance: ±0.5%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 1.24V
Current - Cathode: 65 µA
Current - Output: 12 mA
Voltage - Output (Max): 10 V
товар відсутній
TS78L03CT B0G Taiwan Semiconductor Corporation TS78L00_M2206.pdf Description: IC REG LINEAR 3.3V 100MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 2V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
товар відсутній
TS79L09CT B0G Taiwan Semiconductor Corporation Description: IC REG LINEAR 9V 100MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 9V
Control Features: Current Limit
Part Status: Obsolete
PSRR: 57dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
товар відсутній
TSB772CK B0G Taiwan Semiconductor Corporation TSB772CK_VerG1609.pdf Description: TRANS PNP 30V 3A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-126
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 10 W
товар відсутній
TSM2N7000KCT B0G TSM2N7000KCT B0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 300MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-92
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
товар відсутній
UF4001 B0G UF4001 B0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
UF4001HB0G UF4001HB0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
UF4002 B0G UF4002 B0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
UF4002HB0G UF4002HB0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
UF4003 B0G UF4003 B0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
UF4003HB0G UF4003HB0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
UF4004 B0G UF4004 B0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
SR004HB0G SR002%20SERIES_G15.pdf
SR004HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 500MA DO204AL
товар відсутній
SR103 B0G SR102%20SERIES_F13.pdf
SR103 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A DO204AL
товар відсутній
SR103HB0G SR102%20SERIES_F13.pdf
SR103HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A DO204AL
товар відсутній
SR104 B0G SR102%20SERIES_G2104.pdf
SR104 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товар відсутній
SR104HB0G SR102%20SERIES_G2104.pdf
SR104HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SR106 B0G SR102%20SERIES_G2104.pdf
SR106 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A DO204AL
товар відсутній
SR106HB0G SR102%20SERIES_G2104.pdf
SR106HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A DO204AL
товар відсутній
SR109 B0G SR102%20SERIES_F13.pdf
SR109 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A DO204AL
товар відсутній
SR109HB0G SR102%20SERIES_F13.pdf
SR109HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A DO204AL
товар відсутній
SR1203 B0G SR1202%20SERIES_F13.pdf
SR1203 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 12A DO201AD
товар відсутній
SR204 B0G SR202%20SERIES_L2105.pdf
SR204 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товар відсутній
SR204HB0G SR202%20SERIES_L2105.pdf
SR204HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
товар відсутній
SR220 B0G SR202%20SERIES_K15.pdf
SR220 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 2A DO204AC
товар відсутній
SR220HB0G SR202%20SERIES_K15.pdf
SR220HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 2A DO204AC
товар відсутній
SR302 B0G SR302%20SERIES_J2105.pdf
SR302 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
товар відсутній
SR302HB0G SR302%20SERIES_J2105.pdf
SR302HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
товар відсутній
SR304 B0G SR302%20SERIES_J2105.pdf
SR304 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A DO201AD
товар відсутній
SR304HB0G SR302%20SERIES_J2105.pdf
SR304HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A DO201AD
товар відсутній
SR306 B0G SR302%20SERIES_J2105.pdf
SR306 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товар відсутній
SR306HB0G SR302%20SERIES_J2105.pdf
SR306HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SR310 B0G SR302%20SERIES_J2105.pdf
SR310 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
SR310HB0G SR302%20SERIES_J2105.pdf
SR310HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
SR320 B0G SR302%20SERIES_J2105.pdf
SR320 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
SR320HB0G SR302%20SERIES_J2105.pdf
SR320HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
SR502 B0G SR502%20SERIES_J2105.pdf
SR502 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
товар відсутній
SR503 B0G SR502%20SERIES_J2105.pdf
SR503 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
товар відсутній
SR504 B0G SR502%20SERIES_J2105.pdf
SR504 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товар відсутній
SR504HB0G SR502%20SERIES_J2105.pdf
SR504HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SR505 B0G SR502%20SERIES_J2105.pdf
SR505 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SR505HB0G SR502%20SERIES_J2105.pdf
SR505HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SR506 B0G SR502%20SERIES_J2105.pdf
SR506 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товар відсутній
SR506HB0G SR502%20SERIES_J2105.pdf
SR506HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SR510 B0G SR502%20SERIES_J2105.pdf
SR510 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
SR510HB0G SR502%20SERIES_J2105.pdf
SR510HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 100
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SR515 B0G SR502%20SERIES_J2105.pdf
SR515 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
SR515HB0G SR502%20SERIES_J2105.pdf
SR515HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SR520 B0G SR502%20SERIES_J2105.pdf
SR520 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
SR520HB0G SR502%20SERIES_J2105.pdf
SR520HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SR802 B0G SR802%20SERIES_I13.pdf
SR802 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 8A DO201AD
товар відсутній
SR802HB0G SR802%20SERIES_I13.pdf
SR802HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 8A DO201AD
товар відсутній
SR809 B0G SR802%20SERIES_I13.pdf
SR809 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 8A DO201AD
товар відсутній
SR809HB0G SR802%20SERIES_J2105.pdf
SR809HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 8A DO201AD
товар відсутній
SR810 B0G SR802%20SERIES_J2105.pdf
SR810 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 8A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
SR810HB0G SR802%20SERIES_J2105.pdf
SR810HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 8A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
TS13002ACT B0G TS13002A_VerF15.pdf
TS13002ACT B0G
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 400V 0.3A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 200mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 600 mW
товар відсутній
TS431ACT B0G TS431_VerI2104.pdf
Виробник: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT 36V 1% TO92
Packaging: Box
Tolerance: ±1%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
товар відсутній
TS431BCT B0G TS431_VerI2104.pdf
Виробник: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT 36V 0.5% TO92
Packaging: Box
Tolerance: ±0.5%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
товар відсутній
TS432ACT B0G
Виробник: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT ADJ 1% TO92
Packaging: Box
Tolerance: ±1%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 1.24V
Current - Cathode: 65 µA
Current - Output: 12 mA
Voltage - Output (Max): 10 V
товар відсутній
TS432BCT B0G
Виробник: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT ADJ 1% TO92
Packaging: Box
Tolerance: ±0.5%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 1.24V
Current - Cathode: 65 µA
Current - Output: 12 mA
Voltage - Output (Max): 10 V
товар відсутній
TS78L03CT B0G TS78L00_M2206.pdf
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 100MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 2V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
товар відсутній
TS79L09CT B0G
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 9V 100MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 9V
Control Features: Current Limit
Part Status: Obsolete
PSRR: 57dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
товар відсутній
TSB772CK B0G TSB772CK_VerG1609.pdf
Виробник: Taiwan Semiconductor Corporation
Description: TRANS PNP 30V 3A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-126
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 10 W
товар відсутній
TSM2N7000KCT B0G
TSM2N7000KCT B0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 300MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-92
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
товар відсутній
UF4001 B0G UF4001%20SERIES_P2104.pdf
UF4001 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
UF4001HB0G UF4001%20SERIES_P2104.pdf
UF4001HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
UF4002 B0G UF4001%20SERIES_P2104.pdf
UF4002 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
UF4002HB0G UF4001%20SERIES_P2104.pdf
UF4002HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
UF4003 B0G UF4001%20SERIES_P2104.pdf
UF4003 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
UF4003HB0G UF4001%20SERIES_P2104.pdf
UF4003HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
UF4004 B0G UF4001%20SERIES_P2104.pdf
UF4004 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
Обрати Сторінку:    << Попередня Сторінка ]  1 39 78 114 115 116 117 118 119 120 121 122 123 124 156 195 234 273 312 351 390 395  Наступна Сторінка >> ]