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DBLS207GHC1G DBLS207GHC1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_I15.pdf Description: BRIDGE RECT 1PHASE 1KV 2A DBLS
товар відсутній
DBLS208G C1G DBLS208G C1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 1.2KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
товар відсутній
DBLS208GHC1G DBLS208GHC1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 1.2KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
товар відсутній
DBLS209G C1G DBLS209G C1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 1.4KV 2A DBLS
товар відсутній
DBLS209GHC1G DBLS209GHC1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_I15.pdf Description: BRIDGE RECT 1PHASE 1.4KV 2A DBLS
товар відсутній
GBL04 D2G GBL04 D2G Taiwan Semiconductor Corporation GBL005%20SERIES_J15.pdf Description: BRIDGE RECT 1PHASE 400V 4A GBL
товар відсутній
GBL04HD2G GBL04HD2G Taiwan Semiconductor Corporation GBL005%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 400V 4A GBL
товар відсутній
GBL06HD2G GBL06HD2G Taiwan Semiconductor Corporation GBL005%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 600V 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
GBL08HD2G GBL08HD2G Taiwan Semiconductor Corporation GBL005%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 800V 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBL10 D2G GBL10 D2G Taiwan Semiconductor Corporation GBL005%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 1KV 4A GBL
на замовлення 1135 шт:
термін постачання 21-31 дні (днів)
GBL10HD2G GBL10HD2G Taiwan Semiconductor Corporation GBL005%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 1KV 4A GBL
товар відсутній
GBU1001 D2G GBU1001 D2G Taiwan Semiconductor Corporation GBU1001%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
GBU1001HD2G GBU1001HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
GBU1002 D2G GBU1002 D2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 100V 10A GBU
товар відсутній
GBU1002HD2G GBU1002HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 100V 10A GBU
товар відсутній
GBU1003 D2G GBU1003 D2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 200V 10A GBU
товар відсутній
GBU1003HD2G GBU1003HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 200V 10A GBU
товар відсутній
GBU1004 D2G GBU1004 D2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 400V 10A GBU
товар відсутній
GBU1004HD2G GBU1004HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 400V 10A GBU
товар відсутній
GBU1005 D2G GBU1005 D2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 600V 10A GBU
товар відсутній
GBU1005HD2G GBU1005HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 600V 10A GBU
товар відсутній
GBU1006HD2G GBU1006HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 800V 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
GBU1007HD2G GBU1007HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 1KV 10A GBU
товар відсутній
GBU15L05 D2G GBU15L05 D2G Taiwan Semiconductor Corporation GBU15L05%20SERIES_C2103.pdf Description: BRIDGE RECT 1PHASE 600V 15A GBU
товар відсутній
GBU15L05HD2G GBU15L05HD2G Taiwan Semiconductor Corporation GBU15L05%20SERIES_C2103.pdf Description: BRIDGE RECT 1PHASE 600V 15A GBU
товар відсутній
GBU15L06 D2G GBU15L06 D2G Taiwan Semiconductor Corporation GBU15L05%20SERIES_C2103.pdf Description: BRIDGE RECT 1PHASE 800V 15A GBU
товар відсутній
GBU15L06HD2G GBU15L06HD2G Taiwan Semiconductor Corporation GBU15L05%20SERIES_C2103.pdf Description: BRIDGE RECT 1PHASE 600V 15A GBU
товар відсутній
GBU401 D2G GBU401 D2G Taiwan Semiconductor Corporation GBU401%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
GBU401HD2G GBU401HD2G Taiwan Semiconductor Corporation GBU401%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
GBU402 D2G GBU402 D2G Taiwan Semiconductor Corporation GBU401%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 100V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
GBU402HD2G GBU402HD2G Taiwan Semiconductor Corporation GBU401%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 100V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
GBU403 D2G GBU403 D2G Taiwan Semiconductor Corporation GBU401%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 200V 4A GBU
товар відсутній
GBU403HD2G GBU403HD2G Taiwan Semiconductor Corporation GBU401%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 200V 4A GBU
товар відсутній
GBU404 D2G GBU404 D2G Taiwan Semiconductor Corporation GBU401%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 400V 4A GBU
товар відсутній
GBU404HD2G GBU404HD2G Taiwan Semiconductor Corporation GBU401%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 400V 4A GBU
товар відсутній
GBU405HD2G GBU405HD2G Taiwan Semiconductor Corporation GBU401%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 600V 4A GBU
товар відсутній
GBU406HD2G GBU406HD2G Taiwan Semiconductor Corporation GBU401%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 800V 4A GBU
товар відсутній
GBU407HD2G GBU407HD2G Taiwan Semiconductor Corporation GBU401%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 1KV 4A GBU
товар відсутній
GBU604 D2G GBU604 D2G Taiwan Semiconductor Corporation GBU601%20SERIES_L1705.pdf Description: BRIDGE RECT 1PHASE 400V 6A GBU
товар відсутній
GBU604HD2G GBU604HD2G Taiwan Semiconductor Corporation GBU601%20SERIES_N2103.pdf Description: BRIDGE RECT 1PHASE 400V 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
GBU605HD2G GBU605HD2G Taiwan Semiconductor Corporation GBU601%20SERIES_L1705.pdf Description: BRIDGE RECT 1PHASE 600V 6A GBU
товар відсутній
GBU606HD2G GBU606HD2G Taiwan Semiconductor Corporation GBU601%20SERIES_N2103.pdf Description: BRIDGE RECT 1PHASE 800V 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
товар відсутній
GBU801HD2G GBU801HD2G Taiwan Semiconductor Corporation GBU801%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
GBU805HD2G GBU805HD2G Taiwan Semiconductor Corporation GBU801%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 600V 8A GBU
товар відсутній
GBU807HD2G GBU807HD2G Taiwan Semiconductor Corporation GBU801%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 1KV 8A GBU
товар відсутній
GP1004 C0G GP1004 C0G Taiwan Semiconductor Corporation GP1001%20SERIES_F1511.pdf Description: DIODE ARRAY GP 400V 10A TO220AB
товар відсутній
GP1602HC0G GP1602HC0G Taiwan Semiconductor Corporation GP1601%20SERIES_G2104.pdf Description: DIODE ARRAY GP 100V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
HDBL106G C1G HDBL106G C1G Taiwan Semiconductor Corporation HDBL101G%20SERIES_F15.pdf Description: BRIDGE RECT 1PHASE 800V 1A DBL
товар відсутній
HDBLS101G C1G HDBLS101G C1G Taiwan Semiconductor Corporation HDBLS101G%20SERIES_G2103.pdf Description: BRIDGE RECT 1PHASE 50V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
HDBLS106G C1G HDBLS106G C1G Taiwan Semiconductor Corporation HDBLS101G%20SERIES_G2103.pdf Description: BRIDGE RECT 1PHASE 800V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
HDBLS107G C1G HDBLS107G C1G Taiwan Semiconductor Corporation HDBLS101G%20SERIES_G2103.pdf Description: BRIDGE RECT 1PHASE 1KV 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
HER1003G C0G HER1003G C0G Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 200V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
HER1004G C0G HER1004G C0G Taiwan Semiconductor Corporation HER1001G%20SERIES_H1511.pdf Description: DIODE ARRAY GP 300V 10A TO220AB
товар відсутній
HER1006G C0G HER1006G C0G Taiwan Semiconductor Corporation HER1001G%20SERIES_H1511.pdf Description: DIODE ARRAY GP 600V 10A TO220AB
товар відсутній
HER1007G C0G HER1007G C0G Taiwan Semiconductor Corporation HER1001G%20SERIES_I2104.pdf Description: DIODE ARRAY GP 800V 10A TO220AB
товар відсутній
HER1008G C0G HER1008G C0G Taiwan Semiconductor Corporation HER1001G%20SERIES_H1511.pdf Description: DIODE ARRAY GP 10A TO220AB
товар відсутній
HER1601G C0G HER1601G C0G Taiwan Semiconductor Corporation HER1601G%20SERIES_J2104.pdf Description: DIODE ARRAY GP 50V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
HER1601PT C0G HER1601PT C0G Taiwan Semiconductor Corporation HER1601PT%20SERIES_H2103.pdf Description: DIODE ARRAY GP 50V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
HER1602G C0G HER1602G C0G Taiwan Semiconductor Corporation HER1601G%20SERIES_J2104.pdf Description: DIODE ARRAY GP 100V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
HER1602PT C0G HER1602PT C0G Taiwan Semiconductor Corporation HER1601PT%20SERIES_H2103.pdf Description: DIODE ARRAY GP 100V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
DBLS207GHC1G DBLS201G%20SERIES_I15.pdf
DBLS207GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A DBLS
товар відсутній
DBLS208G C1G DBLS201G%20SERIES_J2103.pdf
DBLS208G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1.2KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
товар відсутній
DBLS208GHC1G DBLS201G%20SERIES_J2103.pdf
DBLS208GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1.2KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
товар відсутній
DBLS209G C1G DBLS201G%20SERIES_J2103.pdf
DBLS209G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1.4KV 2A DBLS
товар відсутній
DBLS209GHC1G DBLS201G%20SERIES_I15.pdf
DBLS209GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1.4KV 2A DBLS
товар відсутній
GBL04 D2G GBL005%20SERIES_J15.pdf
GBL04 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 4A GBL
товар відсутній
GBL04HD2G GBL005%20SERIES_K2103.pdf
GBL04HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 4A GBL
товар відсутній
GBL06HD2G GBL005%20SERIES_K2103.pdf
GBL06HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
GBL08HD2G GBL005%20SERIES_K2103.pdf
GBL08HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBL10 D2G GBL005%20SERIES_K2103.pdf
GBL10 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 4A GBL
на замовлення 1135 шт:
термін постачання 21-31 дні (днів)
GBL10HD2G GBL005%20SERIES_K2103.pdf
GBL10HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 4A GBL
товар відсутній
GBU1001 D2G GBU1001%20SERIES_M2103.pdf
GBU1001 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
GBU1001HD2G GBU1001%20SERIES_M2103.pdf
GBU1001HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
GBU1002 D2G GBU1001%20SERIES_K1705.pdf
GBU1002 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 10A GBU
товар відсутній
GBU1002HD2G GBU1001%20SERIES_K1705.pdf
GBU1002HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 10A GBU
товар відсутній
GBU1003 D2G GBU1001%20SERIES_K1705.pdf
GBU1003 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 10A GBU
товар відсутній
GBU1003HD2G GBU1001%20SERIES_K1705.pdf
GBU1003HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 10A GBU
товар відсутній
GBU1004 D2G GBU1001%20SERIES_K1705.pdf
GBU1004 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 10A GBU
товар відсутній
GBU1004HD2G GBU1001%20SERIES_K1705.pdf
GBU1004HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 10A GBU
товар відсутній
GBU1005 D2G GBU1001%20SERIES_K1705.pdf
GBU1005 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 10A GBU
товар відсутній
GBU1005HD2G GBU1001%20SERIES_K1705.pdf
GBU1005HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 10A GBU
товар відсутній
GBU1006HD2G GBU1001%20SERIES_M2103.pdf
GBU1006HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
GBU1007HD2G GBU1001%20SERIES_K1705.pdf
GBU1007HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 10A GBU
товар відсутній
GBU15L05 D2G GBU15L05%20SERIES_C2103.pdf
GBU15L05 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBU
товар відсутній
GBU15L05HD2G GBU15L05%20SERIES_C2103.pdf
GBU15L05HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBU
товар відсутній
GBU15L06 D2G GBU15L05%20SERIES_C2103.pdf
GBU15L06 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 15A GBU
товар відсутній
GBU15L06HD2G GBU15L05%20SERIES_C2103.pdf
GBU15L06HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBU
товар відсутній
GBU401 D2G GBU401%20SERIES_M2103.pdf
GBU401 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
GBU401HD2G GBU401%20SERIES_M2103.pdf
GBU401HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
GBU402 D2G GBU401%20SERIES_M2103.pdf
GBU402 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
GBU402HD2G GBU401%20SERIES_M2103.pdf
GBU402HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 4A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
GBU403 D2G GBU401%20SERIES_M2103.pdf
GBU403 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 4A GBU
товар відсутній
GBU403HD2G GBU401%20SERIES_K1705.pdf
GBU403HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 4A GBU
товар відсутній
GBU404 D2G GBU401%20SERIES_K1705.pdf
GBU404 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 4A GBU
товар відсутній
GBU404HD2G GBU401%20SERIES_K1705.pdf
GBU404HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 4A GBU
товар відсутній
GBU405HD2G GBU401%20SERIES_K1705.pdf
GBU405HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 4A GBU
товар відсутній
GBU406HD2G GBU401%20SERIES_K1705.pdf
GBU406HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 4A GBU
товар відсутній
GBU407HD2G GBU401%20SERIES_K1705.pdf
GBU407HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
товар відсутній
GBU604 D2G GBU601%20SERIES_L1705.pdf
GBU604 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A GBU
товар відсутній
GBU604HD2G GBU601%20SERIES_N2103.pdf
GBU604HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
GBU605HD2G GBU601%20SERIES_L1705.pdf
GBU605HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A GBU
товар відсутній
GBU606HD2G GBU601%20SERIES_N2103.pdf
GBU606HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 6A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
товар відсутній
GBU801HD2G GBU801%20SERIES_M2103.pdf
GBU801HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
GBU805HD2G GBU801%20SERIES_K1705.pdf
GBU805HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 8A GBU
товар відсутній
GBU807HD2G GBU801%20SERIES_K1705.pdf
GBU807HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 8A GBU
товар відсутній
GP1004 C0G GP1001%20SERIES_F1511.pdf
GP1004 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 400V 10A TO220AB
товар відсутній
GP1602HC0G GP1601%20SERIES_G2104.pdf
GP1602HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 100V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
HDBL106G C1G HDBL101G%20SERIES_F15.pdf
HDBL106G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBL
товар відсутній
HDBLS101G C1G HDBLS101G%20SERIES_G2103.pdf
HDBLS101G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
HDBLS106G C1G HDBLS101G%20SERIES_G2103.pdf
HDBLS106G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
HDBLS107G C1G HDBLS101G%20SERIES_G2103.pdf
HDBLS107G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
HER1003G C0G
HER1003G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
HER1004G C0G HER1001G%20SERIES_H1511.pdf
HER1004G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V 10A TO220AB
товар відсутній
HER1006G C0G HER1001G%20SERIES_H1511.pdf
HER1006G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V 10A TO220AB
товар відсутній
HER1007G C0G HER1001G%20SERIES_I2104.pdf
HER1007G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 800V 10A TO220AB
товар відсутній
HER1008G C0G HER1001G%20SERIES_H1511.pdf
HER1008G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 10A TO220AB
товар відсутній
HER1601G C0G HER1601G%20SERIES_J2104.pdf
HER1601G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 50V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
HER1601PT C0G HER1601PT%20SERIES_H2103.pdf
HER1601PT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 50V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
HER1602G C0G HER1601G%20SERIES_J2104.pdf
HER1602G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 100V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
HER1602PT C0G HER1601PT%20SERIES_H2103.pdf
HER1602PT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 100V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
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