Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99378) > Сторінка 962 з 1657
Фото | Назва | Виробник | Інформація |
Доступність |
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SDR03EZPF3R60 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPF3R60 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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UCR18EVHFSR013 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 0.5W, 1/2W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: 1206 (3216 Metric) Temperature Coefficient: 0/ +350ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 13 mOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BD62221MUV-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver Current - Output: 2A Operating Temperature: -25°C ~ 85°C Output Configuration: Pre-Driver - Half Bridge (4) Voltage - Supply: 8V ~ 28V Applications: Printer Technology: DMOS Supplier Device Package: VQFN032V5050 Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1, 1/2 |
товар відсутній |
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BD62221MUV-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver Current - Output: 2A Operating Temperature: -25°C ~ 85°C Output Configuration: Pre-Driver - Half Bridge (4) Voltage - Supply: 8V ~ 28V Applications: Printer Technology: DMOS Supplier Device Package: VQFN032V5050 Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1, 1/2 |
на замовлення 4189 шт: термін постачання 21-31 дні (днів) |
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PTZTFTE2513B | Rohm Semiconductor |
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на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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PTZTFTE2513B | Rohm Semiconductor |
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на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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BD34352EKV-EVK-001 | Rohm Semiconductor |
Description: EVAL BOARD FOR BD34352 Packaging: Bulk Function: Stereo DAC Type: Audio Utilized IC / Part: BD34352 Supplied Contents: Board(s) |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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DTA123TCAT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPF9103 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPF9103 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPF5103 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 0.1W, 1/10W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 510 kOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPF5103 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 0.1W, 1/10W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 510 kOhms |
на замовлення 9970 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPF9103 | Rohm Semiconductor |
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на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPF9103 | Rohm Semiconductor |
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на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ML610Q172-112GAZWAX | Rohm Semiconductor |
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ML610Q174-475GAZWAX | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: 80-BQFP Mounting Type: Surface Mount Speed: 8.4MHz Program Memory Size: 128KB (64K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: nX-U8/100 Data Converters: A/D 12x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: I²C, SSP, UART/USART Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-QFP (14x20) Number of I/O: 49 DigiKey Programmable: Not Verified |
товар відсутній |
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UT6KC5TCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: DFN2020-8D |
товар відсутній |
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UT6KC5TCR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: DFN2020-8D |
на замовлення 1329 шт: термін постачання 21-31 дні (днів) |
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SH8KE6TB1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
товар відсутній |
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SH8KE6TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 1567 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD7502 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 0.3W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 75 kOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD7502 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 0.3W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 75 kOhms |
на замовлення 9992 шт: термін постачання 21-31 дні (днів) |
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BZX84C3V9LYFHT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5.13% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOT-23 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 3 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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BZX84C3V9LYFHT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Tolerance: ±5.13% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOT-23 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 3 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2435 шт: термін постачання 21-31 дні (днів) |
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BZX84C3V9LYT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5.13% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOT-23 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 3 µA @ 1 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZX84C3V9LYT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Tolerance: ±5.13% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOT-23 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 3 µA @ 1 V |
на замовлення 5980 шт: термін постачання 21-31 дні (днів) |
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BD10IA5MEFJ-LBH2 | Rohm Semiconductor |
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на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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BD10IA5MEFJ-LBH2 | Rohm Semiconductor |
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на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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BRCB016GWL-3UE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-UFBGA, CSPBGA Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 3.6V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 5-UCSP50L1 (1.1x1.15) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BRCB016GWL-3UE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 5-UFBGA, CSPBGA Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 3.6V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 5-UCSP50L1 (1.1x1.15) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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HP8MA2TB1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
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HP8MA2TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
на замовлення 2304 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD43R2 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD43R2 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD4303 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 0.3W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 430 kOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD4303 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 0.3W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 430 kOhms |
на замовлення 9897 шт: термін постачання 21-31 дні (днів) |
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BD9528AMUV-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -20°C ~ 100°C Voltage - Supply: 5.5V ~ 28V Frequency - Switching: 200kHz ~ 500kHz Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2) Supplier Device Package: VQFN032V5050 Voltage/Current - Output 1: Adj to 5.5V Voltage/Current - Output 2: Adj to 5.5V Voltage/Current - Output 3: 3.3V, 100mA w/LED Driver: No w/Supervisor: No w/Sequencer: No Number of Outputs: 4 |
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BD9528AMUV-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -20°C ~ 100°C Voltage - Supply: 5.5V ~ 28V Frequency - Switching: 200kHz ~ 500kHz Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2) Supplier Device Package: VQFN032V5050 Voltage/Current - Output 1: Adj to 5.5V Voltage/Current - Output 2: Adj to 5.5V Voltage/Current - Output 3: 3.3V, 100mA w/LED Driver: No w/Supervisor: No w/Sequencer: No Number of Outputs: 4 |
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SFR18EZPJ111 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR18EZPJ111 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPJ111 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPJ111 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPJ114 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 0.1W, 1/10W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 110 kOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SFR03EZPJ114 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 0.1W, 1/10W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 110 kOhms |
на замовлення 9794 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPJ111 | Rohm Semiconductor |
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на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPJ111 | Rohm Semiconductor |
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на замовлення 9973 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPJ111 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPJ111 | Rohm Semiconductor |
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на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPJ114 | Rohm Semiconductor |
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SFR01MZPJ114 | Rohm Semiconductor |
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на замовлення 9990 шт: термін постачання 21-31 дні (днів) |
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BU4246F-TR | Rohm Semiconductor |
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BU4246F-TR | Rohm Semiconductor |
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на замовлення 1965 шт: термін постачання 21-31 дні (днів) |
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R6507KNXC7G | Rohm Semiconductor |
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товар відсутній |
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R6507KNXC7G | Rohm Semiconductor |
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на замовлення 980 шт: термін постачання 21-31 дні (днів) |
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R6509KNXC7G | Rohm Semiconductor |
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на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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R8011KNXC7G | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 5.5mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R8011KNXC7G | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 5.5mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V |
на замовлення 1999 шт: термін постачання 21-31 дні (днів) |
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R6511KNXC7G | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 5V @ 320µA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V |
на замовлення 3984 шт: термін постачання 21-31 дні (днів) |
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R6524KNXC7G | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 5V @ 750µA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPF3R60 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 1.52 грн |
10000+ | 1.36 грн |
SDR03EZPF3R60 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 13.73 грн |
28+ | 10.73 грн |
100+ | 4.19 грн |
1000+ | 1.65 грн |
2500+ | 1.51 грн |
UCR18EVHFSR013 |
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Виробник: Rohm Semiconductor
Description: RES 0.013 OHM 1% 1/2W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: 0/ +350ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 13 mOhms
Description: RES 0.013 OHM 1% 1/2W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: 0/ +350ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 13 mOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 20.35 грн |
BD62221MUV-E2 |
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Виробник: Rohm Semiconductor
Description: 36V HIGH PERFORMANCE, HIGH RELIA
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 2A
Operating Temperature: -25°C ~ 85°C
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 8V ~ 28V
Applications: Printer
Technology: DMOS
Supplier Device Package: VQFN032V5050
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
Description: 36V HIGH PERFORMANCE, HIGH RELIA
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 2A
Operating Temperature: -25°C ~ 85°C
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 8V ~ 28V
Applications: Printer
Technology: DMOS
Supplier Device Package: VQFN032V5050
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
товар відсутній
BD62221MUV-E2 |
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Виробник: Rohm Semiconductor
Description: 36V HIGH PERFORMANCE, HIGH RELIA
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 2A
Operating Temperature: -25°C ~ 85°C
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 8V ~ 28V
Applications: Printer
Technology: DMOS
Supplier Device Package: VQFN032V5050
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
Description: 36V HIGH PERFORMANCE, HIGH RELIA
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 2A
Operating Temperature: -25°C ~ 85°C
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 8V ~ 28V
Applications: Printer
Technology: DMOS
Supplier Device Package: VQFN032V5050
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
на замовлення 4189 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 208.31 грн |
10+ | 180.17 грн |
25+ | 169.94 грн |
100+ | 135.89 грн |
250+ | 127.59 грн |
500+ | 111.64 грн |
1000+ | 90.99 грн |
PTZTFTE2513B |
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Виробник: Rohm Semiconductor
Description: 1W 13V, DO-214AC, HIGH POWER ZEN
Description: 1W 13V, DO-214AC, HIGH POWER ZEN
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 19.67 грн |
PTZTFTE2513B |
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Виробник: Rohm Semiconductor
Description: 1W 13V, DO-214AC, HIGH POWER ZEN
Description: 1W 13V, DO-214AC, HIGH POWER ZEN
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 51.12 грн |
10+ | 41.81 грн |
100+ | 31.21 грн |
500+ | 23.01 грн |
BD34352EKV-EVK-001 |
Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BD34352
Packaging: Bulk
Function: Stereo DAC
Type: Audio
Utilized IC / Part: BD34352
Supplied Contents: Board(s)
Description: EVAL BOARD FOR BD34352
Packaging: Bulk
Function: Stereo DAC
Type: Audio
Utilized IC / Part: BD34352
Supplied Contents: Board(s)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 37637.88 грн |
DTA123TCAT116 |
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Виробник: Rohm Semiconductor
Description: PNP, SOT-23, R1 ALONE TYPE DIGIT
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Description: PNP, SOT-23, R1 ALONE TYPE DIGIT
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 25.18 грн |
18+ | 16.97 грн |
100+ | 8.57 грн |
500+ | 6.56 грн |
1000+ | 4.87 грн |
SFR01MZPF9103 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 1.12 грн |
SFR01MZPF9103 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
27+ | 11.45 грн |
32+ | 9.48 грн |
100+ | 3.65 грн |
1000+ | 1.51 грн |
2500+ | 1.3 грн |
5000+ | 1.17 грн |
SFR03EZPF5103 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 510 kOhms
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 510 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 1.26 грн |
SFR03EZPF5103 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 510 kOhms
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 510 kOhms
на замовлення 9970 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
34+ | 9.16 грн |
67+ | 4.41 грн |
100+ | 2.94 грн |
117+ | 2.36 грн |
500+ | 1.69 грн |
1000+ | 1.49 грн |
SFR03EZPF9103 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 1.29 грн |
SFR03EZPF9103 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
29+ | 10.68 грн |
32+ | 9.26 грн |
100+ | 3.56 грн |
1000+ | 1.47 грн |
2500+ | 1.27 грн |
ML610Q174-475GAZWAX |
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Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Number of I/O: 49
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Number of I/O: 49
DigiKey Programmable: Not Verified
товар відсутній
UT6KC5TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8D
Description: MOSFET 2N-CH 60V 3.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8D
товар відсутній
UT6KC5TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8D
Description: MOSFET 2N-CH 60V 3.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8D
на замовлення 1329 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 109.88 грн |
10+ | 88.03 грн |
100+ | 70.02 грн |
500+ | 55.6 грн |
1000+ | 47.18 грн |
SH8KE6TB1 |
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Виробник: Rohm Semiconductor
Description: 100V 4.5A DUAL NCH+NCH, SOP8, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: 100V 4.5A DUAL NCH+NCH, SOP8, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
товар відсутній
SH8KE6TB1 |
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Виробник: Rohm Semiconductor
Description: 100V 4.5A DUAL NCH+NCH, SOP8, PO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: 100V 4.5A DUAL NCH+NCH, SOP8, PO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 1567 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 131.24 грн |
10+ | 113.52 грн |
100+ | 91.24 грн |
500+ | 70.35 грн |
1000+ | 58.29 грн |
SDR03EZPD7502 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 75 kOhms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 75 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 2.25 грн |
SDR03EZPD7502 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 75 kOhms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 75 kOhms
на замовлення 9992 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 13.73 грн |
41+ | 7.27 грн |
60+ | 4.95 грн |
100+ | 4.01 грн |
500+ | 2.94 грн |
1000+ | 2.6 грн |
BZX84C3V9LYFHT116 |
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Виробник: Rohm Semiconductor
Description: 250MW, 3.6V, SOT-23, AUTOMOTIVE
Packaging: Tape & Reel (TR)
Tolerance: ±5.13%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: 250MW, 3.6V, SOT-23, AUTOMOTIVE
Packaging: Tape & Reel (TR)
Tolerance: ±5.13%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BZX84C3V9LYFHT116 |
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Виробник: Rohm Semiconductor
Description: 250MW, 3.6V, SOT-23, AUTOMOTIVE
Packaging: Cut Tape (CT)
Tolerance: ±5.13%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: 250MW, 3.6V, SOT-23, AUTOMOTIVE
Packaging: Cut Tape (CT)
Tolerance: ±5.13%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2435 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.94 грн |
17+ | 17.71 грн |
100+ | 8.94 грн |
500+ | 7.43 грн |
1000+ | 5.79 грн |
BZX84C3V9LYT116 |
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Виробник: Rohm Semiconductor
Description: 250MW, 3.9V, SOT-23, ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5.13%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Description: 250MW, 3.9V, SOT-23, ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5.13%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.68 грн |
BZX84C3V9LYT116 |
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Виробник: Rohm Semiconductor
Description: 250MW, 3.9V, SOT-23, ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5.13%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Description: 250MW, 3.9V, SOT-23, ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5.13%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
на замовлення 5980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 20.6 грн |
22+ | 13.74 грн |
100+ | 6.95 грн |
500+ | 5.32 грн |
1000+ | 3.95 грн |
BD10IA5MEFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: 500MA 1V, FIXED OUTPUT, HIGH-ACC
Description: 500MA 1V, FIXED OUTPUT, HIGH-ACC
на замовлення 250 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
250+ | 100.09 грн |
BD10IA5MEFJ-LBH2 |
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Виробник: Rohm Semiconductor
Description: 500MA 1V, FIXED OUTPUT, HIGH-ACC
Description: 500MA 1V, FIXED OUTPUT, HIGH-ACC
на замовлення 250 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 148.03 грн |
10+ | 127.63 грн |
25+ | 120.47 грн |
100+ | 96.33 грн |
BRCB016GWL-3UE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 5UCSP50L1
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, CSPBGA
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 5-UCSP50L1 (1.1x1.15)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT I2C 5UCSP50L1
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, CSPBGA
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 5-UCSP50L1 (1.1x1.15)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 20.09 грн |
BRCB016GWL-3UE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 5UCSP50L1
Packaging: Cut Tape (CT)
Package / Case: 5-UFBGA, CSPBGA
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 5-UCSP50L1 (1.1x1.15)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT I2C 5UCSP50L1
Packaging: Cut Tape (CT)
Package / Case: 5-UFBGA, CSPBGA
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 5-UCSP50L1 (1.1x1.15)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 38.15 грн |
10+ | 35.49 грн |
25+ | 32.98 грн |
50+ | 30.78 грн |
100+ | 27.33 грн |
250+ | 26.99 грн |
500+ | 26.15 грн |
1000+ | 25.45 грн |
HP8MA2TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 18A/15A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Description: MOSFET N/P-CH 30V 18A/15A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
товар відсутній
HP8MA2TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 18A/15A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Description: MOSFET N/P-CH 30V 18A/15A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
на замовлення 2304 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 124.38 грн |
10+ | 99.42 грн |
100+ | 79.1 грн |
500+ | 62.81 грн |
1000+ | 53.29 грн |
SDR03EZPD43R2 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 2.28 грн |
10000+ | 2.05 грн |
SDR03EZPD43R2 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 19.84 грн |
19+ | 16.09 грн |
100+ | 6.28 грн |
1000+ | 2.47 грн |
2500+ | 2.26 грн |
SDR03EZPD4303 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 kOhms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 2.08 грн |
SDR03EZPD4303 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 kOhms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.3W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 kOhms
на замовлення 9897 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 17.55 грн |
20+ | 14.7 грн |
100+ | 5.75 грн |
1000+ | 2.26 грн |
2500+ | 2.07 грн |
BD9528AMUV-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG QD BUCK/LNR VQFN032V5050
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 100°C
Voltage - Supply: 5.5V ~ 28V
Frequency - Switching: 200kHz ~ 500kHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: VQFN032V5050
Voltage/Current - Output 1: Adj to 5.5V
Voltage/Current - Output 2: Adj to 5.5V
Voltage/Current - Output 3: 3.3V, 100mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 4
Description: IC REG QD BUCK/LNR VQFN032V5050
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 100°C
Voltage - Supply: 5.5V ~ 28V
Frequency - Switching: 200kHz ~ 500kHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: VQFN032V5050
Voltage/Current - Output 1: Adj to 5.5V
Voltage/Current - Output 2: Adj to 5.5V
Voltage/Current - Output 3: 3.3V, 100mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 4
товар відсутній
BD9528AMUV-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG QD BUCK/LNR VQFN032V5050
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 100°C
Voltage - Supply: 5.5V ~ 28V
Frequency - Switching: 200kHz ~ 500kHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: VQFN032V5050
Voltage/Current - Output 1: Adj to 5.5V
Voltage/Current - Output 2: Adj to 5.5V
Voltage/Current - Output 3: 3.3V, 100mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 4
Description: IC REG QD BUCK/LNR VQFN032V5050
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 100°C
Voltage - Supply: 5.5V ~ 28V
Frequency - Switching: 200kHz ~ 500kHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: VQFN032V5050
Voltage/Current - Output 1: Adj to 5.5V
Voltage/Current - Output 2: Adj to 5.5V
Voltage/Current - Output 3: 3.3V, 100mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 4
товар відсутній
SFR18EZPJ111 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Description: SULFUR TOLERANT CHIP RESISTORS :
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 1.64 грн |
10000+ | 1.48 грн |
SFR18EZPJ111 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS :
Description: SULFUR TOLERANT CHIP RESISTORS :
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 14.5 грн |
26+ | 11.61 грн |
100+ | 4.54 грн |
1000+ | 1.78 грн |
2500+ | 1.63 грн |
SDR03EZPJ111 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 1 грн |
10000+ | 0.87 грн |
SDR03EZPJ111 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
37+ | 8.39 грн |
40+ | 7.35 грн |
104+ | 2.84 грн |
1000+ | 1.17 грн |
2500+ | 1.01 грн |
SFR03EZPJ114 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 110 kOhms
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 110 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 1.08 грн |
SFR03EZPJ114 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 110 kOhms
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 110 kOhms
на замовлення 9794 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
34+ | 9.16 грн |
73+ | 4.04 грн |
112+ | 2.65 грн |
131+ | 2.11 грн |
500+ | 1.49 грн |
1000+ | 1.29 грн |
SDR10EZPJ111 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 2.15 грн |
SDR10EZPJ111 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 9973 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
17+ | 18.31 грн |
20+ | 15.14 грн |
100+ | 5.94 грн |
1000+ | 2.33 грн |
2500+ | 2.14 грн |
SFR01MZPJ111 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 0.9 грн |
SFR01MZPJ111 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
37+ | 8.39 грн |
40+ | 7.35 грн |
104+ | 2.84 грн |
1000+ | 1.17 грн |
2500+ | 1.01 грн |
5000+ | 0.91 грн |
SFR01MZPJ114 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
товар відсутній
SFR01MZPJ114 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Description: SULFUR TOLERANT CHIP RESISTORS
на замовлення 9990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
37+ | 8.39 грн |
40+ | 7.35 грн |
104+ | 2.84 грн |
1000+ | 1.17 грн |
2500+ | 1.01 грн |
5000+ | 0.91 грн |
BU4246F-TR |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 4SOP
Description: IC SUPERVISOR 1 CHANNEL 4SOP
на замовлення 1965 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 55.7 грн |
10+ | 47.17 грн |
25+ | 44.29 грн |
100+ | 33.92 грн |
250+ | 31.51 грн |
500+ | 26.81 грн |
1000+ | 21.1 грн |
R6507KNXC7G |
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Виробник: Rohm Semiconductor
Description: 650V 7A TO-220FM, HIGH-SPEED SWI
Description: 650V 7A TO-220FM, HIGH-SPEED SWI
товар відсутній
R6507KNXC7G |
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Виробник: Rohm Semiconductor
Description: 650V 7A TO-220FM, HIGH-SPEED SWI
Description: 650V 7A TO-220FM, HIGH-SPEED SWI
на замовлення 980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 195.34 грн |
10+ | 169.22 грн |
100+ | 136 грн |
500+ | 104.86 грн |
R6509KNXC7G |
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Виробник: Rohm Semiconductor
Description: 650V 9A TO-220FM, HIGH-SPEED SWI
Description: 650V 9A TO-220FM, HIGH-SPEED SWI
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 231.97 грн |
10+ | 200.74 грн |
100+ | 164.42 грн |
500+ | 131.36 грн |
1000+ | 110.78 грн |
2000+ | 107.91 грн |
R8011KNXC7G |
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Виробник: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 11
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
Description: HIGH-SPEED SWITCHING NCH 800V 11
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 202.91 грн |
R8011KNXC7G |
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Виробник: Rohm Semiconductor
Description: HIGH-SPEED SWITCHING NCH 800V 11
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
Description: HIGH-SPEED SWITCHING NCH 800V 11
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
на замовлення 1999 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 383.81 грн |
10+ | 332.2 грн |
100+ | 272.16 грн |
500+ | 217.43 грн |
R6511KNXC7G |
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Виробник: Rohm Semiconductor
Description: 650V 11A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Description: 650V 11A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
на замовлення 3984 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 225.86 грн |
50+ | 172.48 грн |
100+ | 147.84 грн |
500+ | 123.32 грн |
1000+ | 105.6 грн |
2000+ | 99.43 грн |
R6524KNXC7G |
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Виробник: Rohm Semiconductor
Description: 650V 24A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Description: 650V 24A TO-220FM, HIGH-SPEED SW
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 378.47 грн |
50+ | 288.83 грн |
100+ | 247.56 грн |
500+ | 206.52 грн |