Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99839) > Сторінка 929 з 1664
Фото | Назва | Виробник | Інформація |
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RGT20TM65DGC9 | Rohm Semiconductor |
Description: IGBT TRNCH FLD 650V 10A TO220NFM Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/32ns Test Condition: 400V, 10A, 10Ohm, 15V Gate Charge: 22 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 30 A Power - Max: 25 W |
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RFN10TF6SC9 | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 10A TO220NFM Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 890 шт: термін постачання 21-31 дні (днів) |
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DA204UMTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 20V 100MA UMD3F Packaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: UMD3F Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 15 V |
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ML610Q174-482GAZWAX | Rohm Semiconductor |
Description: IC MCU 8BIT 128KB FLASH 80QFP Packaging: Bulk Package / Case: 80-BQFP Mounting Type: Surface Mount Speed: 8.4MHz Program Memory Size: 128KB (64K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: nX-U8/100 Data Converters: A/D 12x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: I²C, SSP, UART/USART Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-QFP (14x20) Part Status: Last Time Buy Number of I/O: 49 DigiKey Programmable: Not Verified |
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ML620Q151BT-NNNTBWNX | Rohm Semiconductor | Description: IC |
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ML620Q151BT-108TBWNX | Rohm Semiconductor | Description: IC |
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ML620Q151BT-106TBWNX | Rohm Semiconductor | Description: IC |
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ML620Q151BT-110TBWNX | Rohm Semiconductor | Description: IC |
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ML620Q151BT-103TBWNX | Rohm Semiconductor | Description: IC |
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ML620Q151BT-Z99TBWNX | Rohm Semiconductor | Description: IC |
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ML620Q151BT-104TBWNX | Rohm Semiconductor | Description: IC |
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ML620Q151BT-107TBWNX | Rohm Semiconductor | Description: IC |
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ML620Q151BT-105TBWNX | Rohm Semiconductor | Description: IC |
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2SA1579U3HZGT106R | Rohm Semiconductor |
Description: TRANS PNP 120V 0.05A UMT3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Frequency - Transition: 140MHz Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 200 mW |
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2SA1579U3HZGT106R | Rohm Semiconductor |
Description: TRANS PNP 120V 0.05A UMT3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Frequency - Transition: 140MHz Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 200 mW |
на замовлення 2999 шт: термін постачання 21-31 дні (днів) |
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ML610Q174-499GAZWAX | Rohm Semiconductor |
Description: IC MCU 8BIT 128KB FLASH 80QFP Packaging: Bulk Package / Case: 80-BQFP Mounting Type: Surface Mount Speed: 8.4MHz Program Memory Size: 128KB (64K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: nX-U8/100 Data Converters: A/D 12x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: I²C, SSP, UART/USART Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-QFP (14x20) Part Status: Last Time Buy Number of I/O: 49 DigiKey Programmable: Not Verified |
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R6014YNXC7G | Rohm Semiconductor |
Description: 600V 9A TO-220FM, FAST SWITCHING Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 6V @ 1.4mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V |
на замовлення 1063 шт: термін постачання 21-31 дні (днів) |
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MMBZ33VALYT116 | Rohm Semiconductor | Description: 26V, SOT-23, DUAL LINE, ANODE CO |
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BAS116HYFHT116 | Rohm Semiconductor |
Description: DIODE GEN PURP 80V 215MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
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BAS116HYFHT116 | Rohm Semiconductor |
Description: DIODE GEN PURP 80V 215MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 875 шт: термін постачання 21-31 дні (днів) |
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ML610Q174-467GAZWAX | Rohm Semiconductor |
Description: IC MCU 8BIT 128KB FLASH 80QFP Packaging: Bulk Package / Case: 80-BQFP Mounting Type: Surface Mount Speed: 8.4MHz Program Memory Size: 128KB (64K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: nX-U8/100 Data Converters: A/D 12x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: I²C, SSP, UART/USART Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-QFP (14x20) Part Status: Last Time Buy Number of I/O: 49 |
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UT6K3TCR1 | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
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UT6KB5TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 40V 5A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
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UT6KB5TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 40V 5A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
на замовлення 2334 шт: термін постачання 21-31 дні (днів) |
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UT6JC5TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 60V 2.5A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
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UT6JC5TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 60V 2.5A HUML2020L8 Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
на замовлення 1781 шт: термін постачання 21-31 дні (днів) |
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2SCR564F3TR | Rohm Semiconductor |
Description: TRANS NPN 80V 4A HUML2020L3 Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Frequency - Transition: 280MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SCR564F3TR | Rohm Semiconductor |
Description: TRANS NPN 80V 4A HUML2020L3 Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Frequency - Transition: 280MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
на замовлення 5968 шт: термін постачання 21-31 дні (днів) |
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2SCR563F3TR | Rohm Semiconductor |
Description: TRANS NPN 50V 6A HUML2020L3 Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V Frequency - Transition: 200MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
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2SCR563F3TR | Rohm Semiconductor |
Description: TRANS NPN 50V 6A HUML2020L3 Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V Frequency - Transition: 200MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 2140 шт: термін постачання 21-31 дні (днів) |
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2SAR564F3TR | Rohm Semiconductor |
Description: TRANS PNP 80V 4A HUML2020L3 Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 360mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Frequency - Transition: 220MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SAR564F3TR | Rohm Semiconductor |
Description: TRANS PNP 80V 4A HUML2020L3 Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 360mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Frequency - Transition: 220MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SCR567F3TR | Rohm Semiconductor |
Description: TRANS NPN 120V 2.5A HUML2020L3 Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 80mA, 800mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Frequency - Transition: 220MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1 W |
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2SAR563F3TR | Rohm Semiconductor |
Description: TRANS PNP 50V 6A HUML2020L3 Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V Frequency - Transition: 200MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SAR563F3TR | Rohm Semiconductor |
Description: TRANS PNP 50V 6A HUML2020L3 Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V Frequency - Transition: 200MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 5995 шт: термін постачання 21-31 дні (днів) |
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2SAR567F3TR | Rohm Semiconductor |
Description: TRANS PNP 120V 2.5A HUML2020L3 Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 80mA, 800mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Frequency - Transition: 220MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1 W |
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ML610Q172-123GAZWAX | Rohm Semiconductor | Description: IC |
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ML610Q172-121GAZWAX | Rohm Semiconductor | Description: IC |
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ML610Q172-124GAZWAX | Rohm Semiconductor | Description: IC |
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ML610Q172-120GAZWAX | Rohm Semiconductor |
Description: IC MCU 8BIT 128KB FLASH 64QFP Packaging: Bulk Package / Case: 64-QFP Mounting Type: Surface Mount Speed: 8.4MHz Program Memory Size: 128KB (64K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: nX-U8/100 Data Converters: A/D 12x10b SAR Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: I²C, SSP, UART/USART Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 64-QFP (14x14) Part Status: Last Time Buy Number of I/O: 37 DigiKey Programmable: Not Verified |
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ML610Q172-125GAZWAX | Rohm Semiconductor | Description: IC |
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ML610Q172-122GAZWAX | Rohm Semiconductor |
Description: IC MCU 8BIT 128KB FLASH 64QFP Packaging: Bulk Package / Case: 64-QFP Mounting Type: Surface Mount Speed: 8.4MHz Program Memory Size: 128KB (64K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: nX-U8/100 Data Converters: A/D 12x10b SAR Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: I²C, SSP, UART/USART Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 64-QFP (14x14) Part Status: Last Time Buy Number of I/O: 37 DigiKey Programmable: Not Verified |
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BU97950AFUV-E2 | Rohm Semiconductor |
Description: IC DRVR 280 SEGMENT 48TSSOP Packaging: Tape & Reel (TR) Package / Case: 48-VFSOP (0.240", 6.10mm Width) Display Type: LCD Mounting Type: Surface Mount Interface: 2-Wire Serial Configuration: 280 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.5V ~ 6V Supplier Device Package: 48-TSSOP-CV Part Status: Active Current - Supply: 2.5 µA |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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BU97950AFUV-E2 | Rohm Semiconductor |
Description: IC DRVR 280 SEGMENT 48TSSOP Packaging: Cut Tape (CT) Package / Case: 48-VFSOP (0.240", 6.10mm Width) Display Type: LCD Mounting Type: Surface Mount Interface: 2-Wire Serial Configuration: 280 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.5V ~ 6V Supplier Device Package: 48-TSSOP-CV Part Status: Active Current - Supply: 2.5 µA |
на замовлення 20237 шт: термін постачання 21-31 дні (днів) |
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RFUH10TF6SC9 | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 10A TO220NFM Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 967 шт: термін постачання 21-31 дні (днів) |
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DTB123ECT116 | Rohm Semiconductor |
Description: PNP -500MA/-50V DIGITAL TRANSIST Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
товар відсутній |
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DTB123ECT116 | Rohm Semiconductor |
Description: PNP -500MA/-50V DIGITAL TRANSIST Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
на замовлення 379 шт: термін постачання 21-31 дні (днів) |
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VT6T11T2R | Rohm Semiconductor |
Description: PNP+PNP GENERAL PURPOSE AMPLIFIC Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V Frequency - Transition: 350MHz Supplier Device Package: VMT6 |
товар відсутній |
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VT6T11T2R | Rohm Semiconductor |
Description: PNP+PNP GENERAL PURPOSE AMPLIFIC Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V Frequency - Transition: 350MHz Supplier Device Package: VMT6 |
на замовлення 7990 шт: термін постачання 21-31 дні (днів) |
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VT6X11T2R | Rohm Semiconductor | Description: NPN+NPN GENERAL PURPOSE AMPLIFIC |
товар відсутній |
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VT6X11T2R | Rohm Semiconductor | Description: NPN+NPN GENERAL PURPOSE AMPLIFIC |
на замовлення 7990 шт: термін постачання 21-31 дні (днів) |
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VT6T2T2R | Rohm Semiconductor | Description: PNP+PNP GENERAL PURPOSE AMPLIFIC |
товар відсутній |
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VT6T2T2R | Rohm Semiconductor | Description: PNP+PNP GENERAL PURPOSE AMPLIFIC |
на замовлення 5470 шт: термін постачання 21-31 дні (днів) |
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LMR1801HFV-LBTR | Rohm Semiconductor |
Description: LMR SERIES, LOW NOISE CMOS OPERA Packaging: Tape & Reel (TR) Package / Case: SOT-665 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 890µA Slew Rate: 2.5V/µs Gain Bandwidth Product: 6 MHz Current - Input Bias: 0.5 pA Voltage - Input Offset: 5 µV Supplier Device Package: 5-HVSOF Part Status: Active Number of Circuits: 1 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.2 V Voltage - Supply Span (Max): 5.5 V |
товар відсутній |
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LMR1801HFV-LBTR | Rohm Semiconductor |
Description: LMR SERIES, LOW NOISE CMOS OPERA Packaging: Cut Tape (CT) Package / Case: SOT-665 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 890µA Slew Rate: 2.5V/µs Gain Bandwidth Product: 6 MHz Current - Input Bias: 0.5 pA Voltage - Input Offset: 5 µV Supplier Device Package: 5-HVSOF Part Status: Active Number of Circuits: 1 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.2 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 2994 шт: термін постачання 21-31 дні (днів) |
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LMR1801G-LBTR | Rohm Semiconductor |
Description: LMR SERIES, LOW NOISE CMOS OPERA Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 890µA Slew Rate: 2.5V/µs Gain Bandwidth Product: 6 MHz Current - Input Bias: 0.5 pA Voltage - Input Offset: 5 µV Supplier Device Package: 5-SSOP Part Status: Active Number of Circuits: 1 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.2 V Voltage - Supply Span (Max): 5.5 V |
товар відсутній |
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LMR1801G-LBTR | Rohm Semiconductor |
Description: LMR SERIES, LOW NOISE CMOS OPERA Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 890µA Slew Rate: 2.5V/µs Gain Bandwidth Product: 6 MHz Current - Input Bias: 0.5 pA Voltage - Input Offset: 5 µV Supplier Device Package: 5-SSOP Part Status: Active Number of Circuits: 1 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.2 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 2478 шт: термін постачання 21-31 дні (днів) |
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RB520S-30GHTE61 | Rohm Semiconductor |
Description: DIODE SCHOTTKY SMD Packaging: Tape & Reel (TR) Part Status: Obsolete |
товар відсутній |
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RB520S-30G9JTE61 | Rohm Semiconductor |
Description: DIODE SCHOTTKY SMD Packaging: Tape & Reel (TR) Part Status: Obsolete |
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RB520S-30GTE61 | Rohm Semiconductor |
Description: DIODE SCHOTTKY SMD Packaging: Tape & Reel (TR) Part Status: Obsolete |
товар відсутній |
RGT20TM65DGC9 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FLD 650V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/32ns
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 25 W
Description: IGBT TRNCH FLD 650V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/32ns
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 25 W
товар відсутній
RFN10TF6SC9 |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 890 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 80.59 грн |
50+ | 62.23 грн |
100+ | 49.32 грн |
500+ | 39.23 грн |
DA204UMTL |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 20V 100MA UMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Description: DIODE ARRAY GP 20V 100MA UMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
товар відсутній
ML610Q174-482GAZWAX |
Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
DigiKey Programmable: Not Verified
товар відсутній
2SA1579U3HZGT106R |
Виробник: Rohm Semiconductor
Description: TRANS PNP 120V 0.05A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
Description: TRANS PNP 120V 0.05A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
товар відсутній
2SA1579U3HZGT106R |
Виробник: Rohm Semiconductor
Description: TRANS PNP 120V 0.05A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
Description: TRANS PNP 120V 0.05A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
на замовлення 2999 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.89 грн |
13+ | 23.43 грн |
100+ | 16.28 грн |
500+ | 11.92 грн |
1000+ | 9.69 грн |
ML610Q174-499GAZWAX |
Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
DigiKey Programmable: Not Verified
товар відсутній
R6014YNXC7G |
Виробник: Rohm Semiconductor
Description: 600V 9A TO-220FM, FAST SWITCHING
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
Description: 600V 9A TO-220FM, FAST SWITCHING
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
на замовлення 1063 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 84.39 грн |
50+ | 65.54 грн |
100+ | 53.92 грн |
500+ | 45.68 грн |
MMBZ33VALYT116 |
Виробник: Rohm Semiconductor
Description: 26V, SOT-23, DUAL LINE, ANODE CO
Description: 26V, SOT-23, DUAL LINE, ANODE CO
товар відсутній
BAS116HYFHT116 |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 80V 215MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 80V 215MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BAS116HYFHT116 |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 80V 215MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 80V 215MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 875 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 26.61 грн |
17+ | 18.23 грн |
100+ | 9.2 грн |
500+ | 7.65 грн |
ML610Q174-467GAZWAX |
Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
товар відсутній
UT6K3TCR1 |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
товар відсутній
UT6KB5TCR |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET 2N-CH 40V 5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
товар відсутній
UT6KB5TCR |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET 2N-CH 40V 5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
на замовлення 2334 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 60.06 грн |
10+ | 52.13 грн |
25+ | 49.43 грн |
100+ | 38.13 грн |
250+ | 35.64 грн |
500+ | 31.49 грн |
1000+ | 24.46 грн |
UT6JC5TCR |
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 60V 2.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET 2P-CH 60V 2.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
товар відсутній
UT6JC5TCR |
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 60V 2.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET 2P-CH 60V 2.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
на замовлення 1781 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 56.26 грн |
10+ | 46.71 грн |
100+ | 32.29 грн |
500+ | 25.32 грн |
1000+ | 21.55 грн |
2SCR564F3TR |
Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 4A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS NPN 80V 4A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 25.55 грн |
2SCR564F3TR |
Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 4A HUML2020L3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS NPN 80V 4A HUML2020L3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
на замовлення 5968 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 61.58 грн |
10+ | 48.69 грн |
100+ | 37.84 грн |
500+ | 30.11 грн |
1000+ | 24.52 грн |
2SCR563F3TR |
Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 6A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 6A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товар відсутній
2SCR563F3TR |
Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 6A HUML2020L3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 6A HUML2020L3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 2140 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 61.58 грн |
10+ | 48.69 грн |
100+ | 37.84 грн |
500+ | 30.11 грн |
1000+ | 24.52 грн |
2SAR564F3TR |
Виробник: Rohm Semiconductor
Description: TRANS PNP 80V 4A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 220MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS PNP 80V 4A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 220MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 25.23 грн |
2SAR564F3TR |
Виробник: Rohm Semiconductor
Description: TRANS PNP 80V 4A HUML2020L3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 220MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS PNP 80V 4A HUML2020L3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 220MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 60.82 грн |
10+ | 48.03 грн |
100+ | 37.38 грн |
500+ | 29.73 грн |
1000+ | 24.22 грн |
2SCR567F3TR |
Виробник: Rohm Semiconductor
Description: TRANS NPN 120V 2.5A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
Description: TRANS NPN 120V 2.5A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
товар відсутній
2SAR563F3TR |
Виробник: Rohm Semiconductor
Description: TRANS PNP 50V 6A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS PNP 50V 6A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 25.23 грн |
2SAR563F3TR |
Виробник: Rohm Semiconductor
Description: TRANS PNP 50V 6A HUML2020L3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS PNP 50V 6A HUML2020L3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 5995 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 60.82 грн |
10+ | 48.03 грн |
100+ | 37.38 грн |
500+ | 29.73 грн |
1000+ | 24.22 грн |
2SAR567F3TR |
Виробник: Rohm Semiconductor
Description: TRANS PNP 120V 2.5A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
Description: TRANS PNP 120V 2.5A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
товар відсутній
ML610Q172-120GAZWAX |
Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 64QFP
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 64-QFP (14x14)
Part Status: Last Time Buy
Number of I/O: 37
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 128KB FLASH 64QFP
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 64-QFP (14x14)
Part Status: Last Time Buy
Number of I/O: 37
DigiKey Programmable: Not Verified
товар відсутній
ML610Q172-122GAZWAX |
Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 64QFP
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 64-QFP (14x14)
Part Status: Last Time Buy
Number of I/O: 37
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 128KB FLASH 64QFP
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 64-QFP (14x14)
Part Status: Last Time Buy
Number of I/O: 37
DigiKey Programmable: Not Verified
товар відсутній
BU97950AFUV-E2 |
Виробник: Rohm Semiconductor
Description: IC DRVR 280 SEGMENT 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-VFSOP (0.240", 6.10mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: 2-Wire Serial
Configuration: 280 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: 48-TSSOP-CV
Part Status: Active
Current - Supply: 2.5 µA
Description: IC DRVR 280 SEGMENT 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-VFSOP (0.240", 6.10mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: 2-Wire Serial
Configuration: 280 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: 48-TSSOP-CV
Part Status: Active
Current - Supply: 2.5 µA
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)BU97950AFUV-E2 |
Виробник: Rohm Semiconductor
Description: IC DRVR 280 SEGMENT 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-VFSOP (0.240", 6.10mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: 2-Wire Serial
Configuration: 280 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: 48-TSSOP-CV
Part Status: Active
Current - Supply: 2.5 µA
Description: IC DRVR 280 SEGMENT 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-VFSOP (0.240", 6.10mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: 2-Wire Serial
Configuration: 280 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: 48-TSSOP-CV
Part Status: Active
Current - Supply: 2.5 µA
на замовлення 20237 шт:
термін постачання 21-31 дні (днів)RFUH10TF6SC9 |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 967 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 85.91 грн |
50+ | 66.3 грн |
100+ | 52.54 грн |
500+ | 41.8 грн |
DTB123ECT116 |
Виробник: Rohm Semiconductor
Description: PNP -500MA/-50V DIGITAL TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: PNP -500MA/-50V DIGITAL TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
товар відсутній
DTB123ECT116 |
Виробник: Rohm Semiconductor
Description: PNP -500MA/-50V DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: PNP -500MA/-50V DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 379 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 27.37 грн |
14+ | 21.09 грн |
100+ | 11.17 грн |
VT6T11T2R |
Виробник: Rohm Semiconductor
Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: VMT6
Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: VMT6
товар відсутній
VT6T11T2R |
Виробник: Rohm Semiconductor
Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: VMT6
Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: VMT6
на замовлення 7990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 27.37 грн |
15+ | 20.65 грн |
100+ | 12.37 грн |
500+ | 10.76 грн |
1000+ | 7.31 грн |
2000+ | 6.73 грн |
VT6X11T2R |
Виробник: Rohm Semiconductor
Description: NPN+NPN GENERAL PURPOSE AMPLIFIC
Description: NPN+NPN GENERAL PURPOSE AMPLIFIC
на замовлення 7990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 34.21 грн |
12+ | 24.97 грн |
100+ | 15.59 грн |
500+ | 10.01 грн |
1000+ | 7.7 грн |
2000+ | 6.93 грн |
VT6T2T2R |
Виробник: Rohm Semiconductor
Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
на замовлення 5470 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 36.49 грн |
12+ | 26.5 грн |
100+ | 16.5 грн |
500+ | 10.59 грн |
1000+ | 8.15 грн |
2000+ | 7.33 грн |
LMR1801HFV-LBTR |
Виробник: Rohm Semiconductor
Description: LMR SERIES, LOW NOISE CMOS OPERA
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 890µA
Slew Rate: 2.5V/µs
Gain Bandwidth Product: 6 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 5 µV
Supplier Device Package: 5-HVSOF
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
Description: LMR SERIES, LOW NOISE CMOS OPERA
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 890µA
Slew Rate: 2.5V/µs
Gain Bandwidth Product: 6 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 5 µV
Supplier Device Package: 5-HVSOF
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
товар відсутній
LMR1801HFV-LBTR |
Виробник: Rohm Semiconductor
Description: LMR SERIES, LOW NOISE CMOS OPERA
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 890µA
Slew Rate: 2.5V/µs
Gain Bandwidth Product: 6 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 5 µV
Supplier Device Package: 5-HVSOF
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
Description: LMR SERIES, LOW NOISE CMOS OPERA
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 890µA
Slew Rate: 2.5V/µs
Gain Bandwidth Product: 6 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 5 µV
Supplier Device Package: 5-HVSOF
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 2994 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 240.26 грн |
10+ | 151.33 грн |
25+ | 130.44 грн |
100+ | 100.33 грн |
250+ | 89.59 грн |
500+ | 83.03 грн |
1000+ | 76.31 грн |
LMR1801G-LBTR |
Виробник: Rohm Semiconductor
Description: LMR SERIES, LOW NOISE CMOS OPERA
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 890µA
Slew Rate: 2.5V/µs
Gain Bandwidth Product: 6 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 5 µV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
Description: LMR SERIES, LOW NOISE CMOS OPERA
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 890µA
Slew Rate: 2.5V/µs
Gain Bandwidth Product: 6 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 5 µV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
товар відсутній
LMR1801G-LBTR |
Виробник: Rohm Semiconductor
Description: LMR SERIES, LOW NOISE CMOS OPERA
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 890µA
Slew Rate: 2.5V/µs
Gain Bandwidth Product: 6 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 5 µV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
Description: LMR SERIES, LOW NOISE CMOS OPERA
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 890µA
Slew Rate: 2.5V/µs
Gain Bandwidth Product: 6 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 5 µV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 2478 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 240.26 грн |
10+ | 151.33 грн |
25+ | 130.44 грн |
100+ | 100.33 грн |
250+ | 89.59 грн |
500+ | 83.03 грн |
1000+ | 76.31 грн |
RB520S-30GHTE61 |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: DIODE SCHOTTKY SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
RB520S-30G9JTE61 |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: DIODE SCHOTTKY SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
RB520S-30GTE61 |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: DIODE SCHOTTKY SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній