Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99817) > Сторінка 854 з 1664
Фото | Назва | Виробник | Інформація |
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ICP-N20FT104 | Rohm Semiconductor | Description: IC CIRCUIT PROTECTOR 50V 0.8A TH |
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ICP-N25ZV | Rohm Semiconductor | Description: IC CIRCUIT PROTECTOR 50V 1.0A TH |
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ICP-N25 | Rohm Semiconductor |
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ICP-N25.T104 | Rohm Semiconductor |
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ICP-N25T119 | Rohm Semiconductor |
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SIM-20STLL | Rohm Semiconductor |
Description: INFRARED EMITTER Packaging: Bulk Part Status: Obsolete |
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SIM-20STLM | Rohm Semiconductor |
Description: INFRARED EMITTER Packaging: Bulk Part Status: Obsolete |
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ICP-N20 | Rohm Semiconductor |
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SIM-20STFM | Rohm Semiconductor |
Description: INFRARED EMITTER Packaging: Bulk Part Status: Obsolete |
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RB706WM-40FHTL | Rohm Semiconductor |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RB706WM-40FHTL | Rohm Semiconductor |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RB706WM-40FHTL | Rohm Semiconductor |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN142SMT2R | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.45pF @ 1V, 1MHz Resistance @ If, F: 2Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 60V Supplier Device Package: EMD2 Current - Max: 100 mA |
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RB520ZS8A30TE61 | Rohm Semiconductor |
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RB520ZS-308OPT2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 100MA GMD2 Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: GMD2 Operating Temperature - Junction: 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA Current - Reverse Leakage @ Vr: 300 nA @ 10 V |
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RB520ZS-40T2R | Rohm Semiconductor | Description: DIODE SCHOTTKY 100MA GMD2 |
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RB520ZS-308EPT2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 100MA GMD2 Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: GMD2 Operating Temperature - Junction: 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA Current - Reverse Leakage @ Vr: 300 nA @ 10 V |
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RB520CM-40T2R | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: VMN2M Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA Current - Reverse Leakage @ Vr: 15 µA @ 40 V |
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SP8K33TB1 | Rohm Semiconductor | Description: MOSFET 2N-CH 60V 8SOP |
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SP8K32TB1 | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 4.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V FET Feature: Logic Level Gate, 4V Drive Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
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SP8K3FD5TB1 | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 8SOP |
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RSS065N06FW6TB1 | Rohm Semiconductor |
Description: MOSFET N-CH 60V 6.5A SOP8 Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 6.5A Part Status: Obsolete |
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SP8K32MB1TB1 | Rohm Semiconductor | Description: MOSFET 2N-CH 60V 8SOP |
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RN142S9HLTE61 | Rohm Semiconductor |
Description: RF DIODE PIN SMD Packaging: Tape & Reel (TR) |
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RB521S-309HLTE61 | Rohm Semiconductor |
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RB521S-303TTE61 | Rohm Semiconductor |
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RB521S-30FVTE61 | Rohm Semiconductor |
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RB521S-30TMTE61 | Rohm Semiconductor |
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RB521S-30GDTE61 | Rohm Semiconductor |
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RB521S-30FSTE61 | Rohm Semiconductor |
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RB521S-30ULTE61 | Rohm Semiconductor |
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RB521S-30U9JTE61 | Rohm Semiconductor |
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RB521S-30SPTE61 | Rohm Semiconductor |
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RB521S-30FJTE61 | Rohm Semiconductor |
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RN142SFHTE61 | Rohm Semiconductor |
Description: RF DIODE PIN SMD Packaging: Tape & Reel (TR) |
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RB521S-30GTE61 | Rohm Semiconductor |
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RB521S-30G9JTE61 | Rohm Semiconductor |
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RB521S-30LTE61 | Rohm Semiconductor |
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RN142ST2R | Rohm Semiconductor |
Description: RF DIODE PIN SMD Packaging: Tape & Reel (TR) |
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RN142SFSTE61 | Rohm Semiconductor |
Description: RF DIODE PIN SMD Packaging: Tape & Reel (TR) |
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1SS390T9TE61 | Rohm Semiconductor |
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1SS390FTE61 | Rohm Semiconductor |
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RB861Y9HKT2R | Rohm Semiconductor | Description: DIODE SCHOTTKY SMD |
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BR25H320FVT-2CE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP-B Grade: Automotive Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Memory Organization: 4K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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BR25H320FVT-2CE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP-B Grade: Automotive Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Memory Organization: 4K x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 1340 шт: термін постачання 21-31 дні (днів) |
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EMH4FHAT2R | Rohm Semiconductor |
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на замовлення 7957 шт: термін постачання 21-31 дні (днів) |
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SCT3080KRC14 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 165W Vgs(th) (Max) @ Id: 5.6V @ 5mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V |
на замовлення 270 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPF2003 | Rohm Semiconductor |
![]() Power (Watts): 0.3W Tolerance: ±1% Features: Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 200 kOhms |
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SDR03EZPF2003 | Rohm Semiconductor |
![]() Power (Watts): 0.3W Tolerance: ±1% Features: Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 200 kOhms |
на замовлення 358 шт: термін постачання 21-31 дні (днів) |
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BZX84B13VLT116 | Rohm Semiconductor |
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BZX84B13VLT116 | Rohm Semiconductor |
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на замовлення 2505 шт: термін постачання 21-31 дні (днів) |
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BZX84B13VLFHT116 | Rohm Semiconductor |
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BZX84B13VLFHT116 | Rohm Semiconductor |
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на замовлення 1945 шт: термін постачання 21-31 дні (днів) |
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SMF9V0TFTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Current - Peak Pulse (10/1000µs): 13A Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: PMDU Unidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 15.4V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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SMF9V0TFTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Current - Peak Pulse (10/1000µs): 13A Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: PMDU Unidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 15.4V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2491 шт: термін постачання 21-31 дні (днів) |
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SMF9V0TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 13A Voltage - Reverse Standoff (Typ): 9V (Max) Supplier Device Package: PMDU Unidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 15.4V Power - Peak Pulse: 200W Power Line Protection: No |
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SMF9V0TR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 13A Voltage - Reverse Standoff (Typ): 9V (Max) Supplier Device Package: PMDU Unidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 15.4V Power - Peak Pulse: 200W Power Line Protection: No |
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UMB4NFHATN | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: UMT6 Grade: Automotive Qualification: AEC-Q101 |
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UMB4NFHATN | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: UMT6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2985 шт: термін постачання 21-31 дні (днів) |
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UMB2NFHATN | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: UMT6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ICP-N20FT104 |
Виробник: Rohm Semiconductor
Description: IC CIRCUIT PROTECTOR 50V 0.8A TH
Description: IC CIRCUIT PROTECTOR 50V 0.8A TH
товар відсутній
ICP-N25.T104 |
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Виробник: Rohm Semiconductor
Description: IC CIRCUIT PROTECTOR 50V 1.0A TH
Description: IC CIRCUIT PROTECTOR 50V 1.0A TH
товар відсутній
ICP-N25T119 |
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Виробник: Rohm Semiconductor
Description: IC CIRCUIT PROTECTOR 50V 1.0A TH
Description: IC CIRCUIT PROTECTOR 50V 1.0A TH
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SIM-20STLL |
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SIM-20STLM |
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SIM-20STFM |
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RB706WM-40FHTL |
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Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)RB706WM-40FHTL |
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Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)RB706WM-40FHTL |
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Виробник: Rohm Semiconductor
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
Description: SCHOTTKY BARRIER DIODE (AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)RN142SMT2R |
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Виробник: Rohm Semiconductor
Description: RF DIODE PIN 60V 100MA SOD-523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.45pF @ 1V, 1MHz
Resistance @ If, F: 2Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 60V
Supplier Device Package: EMD2
Current - Max: 100 mA
Description: RF DIODE PIN 60V 100MA SOD-523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.45pF @ 1V, 1MHz
Resistance @ If, F: 2Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 60V
Supplier Device Package: EMD2
Current - Max: 100 mA
товар відсутній
RB520ZS8A30TE61 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA HMD8
Description: DIODE SCHOTTKY 30V 100MA HMD8
товар відсутній
RB520ZS-308OPT2R |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA GMD2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: GMD2
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA
Current - Reverse Leakage @ Vr: 300 nA @ 10 V
Description: DIODE SCHOTTKY 30V 100MA GMD2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: GMD2
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA
Current - Reverse Leakage @ Vr: 300 nA @ 10 V
товар відсутній
RB520ZS-308EPT2R |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA GMD2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: GMD2
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA
Current - Reverse Leakage @ Vr: 300 nA @ 10 V
Description: DIODE SCHOTTKY 30V 100MA GMD2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: GMD2
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA
Current - Reverse Leakage @ Vr: 300 nA @ 10 V
товар відсутній
RB520CM-40T2R |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA VMN2M
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2M
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 40 V
Description: DIODE SCHOTTKY 40V 100MA VMN2M
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2M
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 40 V
товар відсутній
SP8K32TB1 |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
товар відсутній
RSS065N06FW6TB1 |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 6.5A SOP8
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 6.5A
Part Status: Obsolete
Description: MOSFET N-CH 60V 6.5A SOP8
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 6.5A
Part Status: Obsolete
товар відсутній
RN142S9HLTE61 |
товар відсутній
RB521S-309HLTE61 |
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товар відсутній
RB521S-303TTE61 |
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товар відсутній
RB521S-30FVTE61 |
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товар відсутній
RB521S-30TMTE61 |
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товар відсутній
RB521S-30GDTE61 |
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товар відсутній
RB521S-30FSTE61 |
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товар відсутній
RB521S-30ULTE61 |
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товар відсутній
RB521S-30U9JTE61 |
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товар відсутній
RB521S-30SPTE61 |
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товар відсутній
RB521S-30FJTE61 |
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товар відсутній
RN142SFHTE61 |
товар відсутній
RB521S-30GTE61 |
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товар відсутній
RB521S-30G9JTE61 |
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товар відсутній
RB521S-30LTE61 |
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товар відсутній
RN142ST2R |
товар відсутній
RN142SFSTE61 |
товар відсутній
BR25H320FVT-2CE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT SPI 8TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 32KBIT SPI 8TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
BR25H320FVT-2CE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT SPI 8TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC EEPROM 32KBIT SPI 8TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1340 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 51.7 грн |
10+ | 44.51 грн |
25+ | 42.49 грн |
50+ | 38.48 грн |
100+ | 37.14 грн |
250+ | 35.42 грн |
500+ | 33.61 грн |
1000+ | 32.43 грн |
EMH4FHAT2R |
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Виробник: Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR (CORR
Description: NPN+NPN DIGITAL TRANSISTOR (CORR
на замовлення 7957 шт:
термін постачання 21-31 дні (днів)SCT3080KRC14 |
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Виробник: Rohm Semiconductor
Description: SICFET N-CH 1200V 31A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
Description: SICFET N-CH 1200V 31A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
на замовлення 270 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1152.62 грн |
30+ | 898.85 грн |
120+ | 845.98 грн |
SDR03EZPF2003 |
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Виробник: Rohm Semiconductor
Description: RES SMD 200 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 200 kOhms
Description: RES SMD 200 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 200 kOhms
товар відсутній
SDR03EZPF2003 |
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Виробник: Rohm Semiconductor
Description: RES SMD 200 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 200 kOhms
Description: RES SMD 200 KOHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 200 kOhms
на замовлення 358 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.16 грн |
31+ | 9.74 грн |
57+ | 5.14 грн |
100+ | 3.58 грн |
BZX84B13VLT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 13V 250MW SSD3
Description: DIODE ZENER 13V 250MW SSD3
на замовлення 2505 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 15.97 грн |
24+ | 12.59 грн |
100+ | 6.67 грн |
500+ | 4.12 грн |
1000+ | 2.8 грн |
BZX84B13VLFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 13V 250MW SSD3
Description: DIODE ZENER 13V 250MW SSD3
товар відсутній
BZX84B13VLFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 13V 250MW SSD3
Description: DIODE ZENER 13V 250MW SSD3
на замовлення 1945 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
19+ | 16.73 грн |
23+ | 13.25 грн |
100+ | 7 грн |
500+ | 4.32 грн |
1000+ | 2.94 грн |
SMF9V0TFTR |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 9VWM 15.4VC PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 9VWM 15.4VC PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMF9V0TFTR |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 9VWM 15.4VC PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 9VWM 15.4VC PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2491 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 32.69 грн |
12+ | 24.6 грн |
100+ | 14.77 грн |
500+ | 12.83 грн |
1000+ | 8.73 грн |
SMF9V0TR |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 9VWM 15.4VC PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 9V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 9VWM 15.4VC PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 9V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 200W
Power Line Protection: No
товар відсутній
SMF9V0TR |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 9VWM 15.4VC PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 9V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 9VWM 15.4VC PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 9V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 200W
Power Line Protection: No
товар відсутній
UMB4NFHATN |
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Виробник: Rohm Semiconductor
Description: PNP+PNP DIGITAL TRANSISTOR (CORR
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
Description: PNP+PNP DIGITAL TRANSISTOR (CORR
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
UMB4NFHATN |
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Виробник: Rohm Semiconductor
Description: PNP+PNP DIGITAL TRANSISTOR (CORR
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
Description: PNP+PNP DIGITAL TRANSISTOR (CORR
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2985 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 23.57 грн |
19+ | 15.81 грн |
100+ | 7.97 грн |
500+ | 6.11 грн |
1000+ | 4.53 грн |
UMB2NFHATN |
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Виробник: Rohm Semiconductor
Description: PNP+PNP DIGITAL TRANSISTOR (CORR
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
Description: PNP+PNP DIGITAL TRANSISTOR (CORR
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.08 грн |