Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99819) > Сторінка 459 з 1664
| Фото | Назва | Виробник | Інформація |
Доступність |
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DTD743EMT2L | Rohm Semiconductor |
 Description: TRANS PREBIAS NPN 30V 0.2A VMT3Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Supplier Device Package: VMT3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
товар відсутній |
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EM6K31T2R | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 0.25A EMT6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: EMT6 Part Status: Active |
на замовлення 24793 шт: термін постачання 21-31 дні (днів) |
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EMA5T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT5 |
на замовлення 70 шт: термін постачання 21-31 дні (днів) |
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EMD30T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6 |
на замовлення 15830 шт: термін постачання 21-31 дні (днів) |
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EMG6T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT5 Packaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Flat Lead Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Supplier Device Package: EMT5 |
товар відсутній |
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EMP11T2R | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA EMD6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: EMD6 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
на замовлення 69 шт: термін постачання 21-31 дні (днів) |
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EMX26T2R | Rohm Semiconductor |
Description: TRANS 2NPN 50V 0.15A 6EMT Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 300nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V Frequency - Transition: 250MHz Supplier Device Package: EMT6 |
на замовлення 26870 шт: термін постачання 21-31 дні (днів) |
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FMA1AT148 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP SMT5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SMT5 Part Status: Active |
на замовлення 2611 шт: термін постачання 21-31 дні (днів) |
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FMA3AT148 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP SMT5 |
на замовлення 2997 шт: термін постачання 21-31 дні (днів) |
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FMA4AT148 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP SMT5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: SMT5 Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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FMG3AT148 | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.3W SMT5 |
на замовлення 2591 шт: термін постачання 21-31 дні (днів) |
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FMY4AT148 | Rohm Semiconductor |
Description: TRANS NPN/PNP DARL 50V 5SMT |
на замовлення 1885 шт: термін постачання 21-31 дні (днів) |
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FTZ5.6ET148 | Rohm Semiconductor |
Description: DIODE ZENER ARRAY 5.6V SMD5 Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Configuration: 2 Pair Common Anode Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SMD5 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V |
на замовлення 4402 шт: термін постачання 21-31 дні (днів) |
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IMH21T110 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL NPN SMT6 |
на замовлення 2935 шт: термін постачання 21-31 дні (днів) |
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IMH5AT108 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL NPN SMT6 Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SMT6 |
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IMT1AT108 | Rohm Semiconductor |
Description: TRANS 2PNP 50V 0.15A 6SMT Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 140MHz Supplier Device Package: SMT6 |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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IMT3AT108 | Rohm Semiconductor |
Description: TRANS 2PNP 50V 0.15A 6SMT Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 140MHz Supplier Device Package: SMT6 |
на замовлення 1169 шт: термін постачання 21-31 дні (днів) |
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IMX1T108 | Rohm Semiconductor |
Description: TRANS 2NPN 50V 0.15A 6SMT Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: SMT6 Part Status: Not For New Designs |
на замовлення 1190 шт: термін постачання 21-31 дні (днів) |
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MMSTA13T146 | Rohm Semiconductor |
Description: TRANS NPN 30V 0.3A SOT-346 SMT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
на замовлення 2785 шт: термін постачання 21-31 дні (днів) |
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PTZTE2510A | Rohm Semiconductor |
Description: DIODE ZENER 10V 1W PMDS Packaging: Cut Tape (CT) Tolerance: ±6% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: PMDS Part Status: Not For New Designs Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 7 V |
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PTZTE2512A | Rohm Semiconductor |
Description: DIODE ZENER 12V 1W PMDS Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: PMDS Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 9 V |
на замовлення 489 шт: термін постачання 21-31 дні (днів) |
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PTZTE2513A | Rohm Semiconductor |
Description: DIODE ZENER 13V 1W PMDS |
на замовлення 372 шт: термін постачання 21-31 дні (днів) |
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PTZTE2515A | Rohm Semiconductor |
Description: DIODE ZENER 15V 1W PMDS Packaging: Cut Tape (CT) Tolerance: ±6% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: PMDS Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 11 V |
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PTZTE2516A | Rohm Semiconductor |
Description: DIODE ZENER 16V 1W PMDS Packaging: Cut Tape (CT) Tolerance: ±6% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 12 Ohms Supplier Device Package: PMDS Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 12 V |
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PTZTE2518A | Rohm Semiconductor |
Description: DIODE ZENER 18V 1W PMDS Packaging: Cut Tape (CT) Tolerance: ±6% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 12 Ohms Supplier Device Package: PMDS Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 13 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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PTZTE2520A | Rohm Semiconductor |
Description: DIODE ZENER 20V 1W PMDS |
на замовлення 1100 шт: термін постачання 21-31 дні (днів) |
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PTZTE2522A | Rohm Semiconductor |
Description: DIODE ZENER 22V 1W PMDS |
на замовлення 1446 шт: термін постачання 21-31 дні (днів) |
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PTZTE2524A | Rohm Semiconductor |
Description: DIODE ZENER 24V 1W PMDS |
на замовлення 1469 шт: термін постачання 21-31 дні (днів) |
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PTZTE2527A | Rohm Semiconductor |
Description: DIODE ZENER 27V 1W PMDS |
на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
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PTZTE2533A | Rohm Semiconductor |
Description: DIODE ZENER 33V 1W PMDS |
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PTZTE2536A | Rohm Semiconductor |
Description: DIODE ZENER 36V 1W PMDS |
на замовлення 1275 шт: термін постачання 21-31 дні (днів) |
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PTZTE2539A | Rohm Semiconductor |
Description: DIODE ZENER 39V 1W PMDS |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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PTZTE253.6B | Rohm Semiconductor |
Description: DIODE ZENER 3.8V 1W PMDS |
на замовлення 6187 шт: термін постачання 21-31 дні (днів) |
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PTZTE2543A | Rohm Semiconductor |
Description: DIODE ZENER 43V 1W PMDS |
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PTZTE254.7B | Rohm Semiconductor |
Description: DIODE ZENER 4.9V 1W PMDS Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 4.9 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: PMDS Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 1 V |
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PTZTE255.1A | Rohm Semiconductor |
Description: DIODE ZENER 5.1V 1W PMDS |
на замовлення 1399 шт: термін постачання 21-31 дні (днів) |
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PTZTE255.6A | Rohm Semiconductor |
Description: DIODE ZENER 5.6V 1W PMDS |
на замовлення 3290 шт: термін постачання 21-31 дні (днів) |
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PTZTE256.2A | Rohm Semiconductor |
Description: DIODE ZENER 6.2V 1W PMDS |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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PTZTE256.8A | Rohm Semiconductor |
Description: DIODE ZENER 6.8V 1W PMDS |
на замовлення 388 шт: термін постачання 21-31 дні (днів) |
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PTZTE257.5A | Rohm Semiconductor |
Description: DIODE ZENER 7.5V 1W PMDS |
на замовлення 741 шт: термін постачання 21-31 дні (днів) |
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PTZTE258.2A | Rohm Semiconductor |
Description: DIODE ZENER 8.2V 1W PMDS |
на замовлення 2960 шт: термін постачання 21-31 дні (днів) |
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PTZTE259.1B | Rohm Semiconductor |
Description: DIODE ZENER 9.8V 1W PMDS |
товар відсутній |
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QSH29TR | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 1.25W TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 1.25W Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 70V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 100mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 200mA, 5V Resistor - Base (R1): 10kOhms Supplier Device Package: TSMT6 (SC-95) Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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QSZ2TR | Rohm Semiconductor |
Description: TRANS NPN/PNP 30V 1.5A 5TSMT Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Transistor Type: NPN, PNP (Emitter Coupled) Operating Temperature: 150°C (TJ) Power - Max: 1.25W Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 370mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 300MHz, 280MHz Supplier Device Package: TSMT5 |
на замовлення 2473 шт: термін постачання 21-31 дні (днів) |
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QSZ4TR | Rohm Semiconductor |
Description: TRANS NPN/PNP 30V 2A 5TSMT |
на замовлення 1670 шт: термін постачання 21-31 дні (днів) |
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RB160L-90TE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 90V 1A PMDS Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 90 V |
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RB162VA-20TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 20V 1A TUMD2 |
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RB411VA-50TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 20V 500MA TUMD2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 20pF @ 10V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: TUMD2 Operating Temperature - Junction: 125°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA Current - Reverse Leakage @ Vr: 30 µA @ 10 V |
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RB450FT106 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 100MA UMD3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 6pF @ 10V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: UMD3 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 10 V |
на замовлення 3689 шт: термін постачання 21-31 дні (днів) |
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RB496EATR | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 20V 1A TSMD5 Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 1A Supplier Device Package: TSMD5 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 10 V |
на замовлення 8155 шт: термін постачання 21-31 дні (днів) |
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RB520SM-40T2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 200MA EMD2 Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: EMD2 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V |
на замовлення 45927 шт: термін постачання 21-31 дні (днів) |
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RB551V-30TE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 20V 500MA UMD2 Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA Current - Reverse Leakage @ Vr: 100 µA @ 20 V |
на замовлення 1363 шт: термін постачання 21-31 дні (днів) |
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RF051VA2STR | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 500MA TUMD2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: TUMD2 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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RF073M2STR | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 700MA PMDU |
на замовлення 7083 шт: термін постачання 21-31 дні (днів) |
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RF103L2STE25 | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 1A PMDS Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товар відсутній |
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RN739DT146 | Rohm Semiconductor |
Description: DIODE PIN HF SW 50V 50MA SOT-346 |
на замовлення 2969 шт: термін постачання 21-31 дні (днів) |
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RPM841-H11E2A | Rohm Semiconductor |
Description: MODULE IRDA 115.2KBPS 7-SMD Packaging: Cut Tape (CT) Orientation: Side View Operating Temperature: -30°C ~ 85°C Size: 6.8mm x 2.4mm x 1.5mm Data Rate: 115.2kbs (SIR) Standards: IrDA 1.2 Link Range, Low Power: 20cm, 60cm Voltage - Supply: 2.4 V ~ 3.6 V Idle Current, Typ @ 25°C: 90 µA |
товар відсутній |
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RPM872-H14E2A | Rohm Semiconductor |
Description: MODULE IRDA 115.2KBPS 8SMD |
товар відсутній |
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RQ1E050RPTR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V |
на замовлення 1731 шт: термін постачання 21-31 дні (днів) |
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RRR015P03TL | Rohm Semiconductor |
Description: MOSFET P-CH 30V 1.5A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V Power Dissipation (Max): 540mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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| DTD743EMT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 30V 0.2A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: VMT3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Description: TRANS PREBIAS NPN 30V 0.2A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: VMT3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
товар відсутній
| EM6K31T2R |
|
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 0.25A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
Description: MOSFET 2N-CH 60V 0.25A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
на замовлення 24793 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.97 грн |
| 11+ | 28.63 грн |
| 100+ | 19.88 грн |
| 500+ | 14.57 грн |
| 1000+ | 11.84 грн |
| 2000+ | 10.58 грн |
| EMA5T2R |
|
Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT5
Description: TRANS 2PNP PREBIAS 0.15W EMT5
на замовлення 70 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.97 грн |
| 12+ | 25.11 грн |
| EMD30T2R |
|
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
на замовлення 15830 шт:
термін постачання 21-31 дні (днів)| EMG6T2R |
|
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Supplier Device Package: EMT5
Description: TRANS 2NPN PREBIAS 0.15W EMT5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Supplier Device Package: EMT5
товар відсутній
| EMP11T2R |
|
Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA EMD6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD6
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: DIODE ARRAY GP 80V 100MA EMD6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD6
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
на замовлення 69 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.69 грн |
| 13+ | 23.94 грн |
| EMX26T2R |
|
Виробник: Rohm Semiconductor
Description: TRANS 2NPN 50V 0.15A 6EMT
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 300nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: EMT6
Description: TRANS 2NPN 50V 0.15A 6EMT
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 300nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: EMT6
на замовлення 26870 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.45 грн |
| 11+ | 27.6 грн |
| 100+ | 19.17 грн |
| 500+ | 14.05 грн |
| 1000+ | 11.42 грн |
| 2000+ | 10.21 грн |
| FMA1AT148 |
|
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SMT5
Part Status: Active
Description: TRANS PREBIAS DUAL PNP SMT5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SMT5
Part Status: Active
на замовлення 2611 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.49 грн |
| 11+ | 28.33 грн |
| 100+ | 19.31 грн |
| 500+ | 13.59 грн |
| 1000+ | 10.19 грн |
| FMA3AT148 |
|
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT5
Description: TRANS PREBIAS DUAL PNP SMT5
на замовлення 2997 шт:
термін постачання 21-31 дні (днів)| FMA4AT148 |
|
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SMT5
Part Status: Active
Description: TRANS PREBIAS DUAL PNP SMT5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SMT5
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| FMG3AT148 |
|
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.3W SMT5
Description: TRANS 2NPN PREBIAS 0.3W SMT5
на замовлення 2591 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 38.78 грн |
| 10+ | 30.46 грн |
| 100+ | 20.71 грн |
| 500+ | 14.57 грн |
| 1000+ | 10.93 грн |
| FMY4AT148 |
|
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP DARL 50V 5SMT
Description: TRANS NPN/PNP DARL 50V 5SMT
на замовлення 1885 шт:
термін постачання 21-31 дні (днів)| FTZ5.6ET148 |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER ARRAY 5.6V SMD5
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Configuration: 2 Pair Common Anode
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SMD5
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Description: DIODE ZENER ARRAY 5.6V SMD5
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Configuration: 2 Pair Common Anode
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SMD5
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
на замовлення 4402 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 38.78 грн |
| 10+ | 31.92 грн |
| 100+ | 22.19 грн |
| 500+ | 16.26 грн |
| 1000+ | 13.22 грн |
| IMH21T110 |
|
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Description: TRANS PREBIAS DUAL NPN SMT6
на замовлення 2935 шт:
термін постачання 21-31 дні (днів)| IMH5AT108 |
|
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SMT6
Description: TRANS PREBIAS DUAL NPN SMT6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SMT6
товар відсутній
| IMT1AT108 |
|
Виробник: Rohm Semiconductor
Description: TRANS 2PNP 50V 0.15A 6SMT
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT6
Description: TRANS 2PNP 50V 0.15A 6SMT
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT6
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.73 грн |
| IMT3AT108 |
|
Виробник: Rohm Semiconductor
Description: TRANS 2PNP 50V 0.15A 6SMT
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT6
Description: TRANS 2PNP 50V 0.15A 6SMT
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT6
на замовлення 1169 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.37 грн |
| 16+ | 18.82 грн |
| 100+ | 9.47 грн |
| 500+ | 7.88 грн |
| 1000+ | 6.13 грн |
| IMX1T108 |
|
Виробник: Rohm Semiconductor
Description: TRANS 2NPN 50V 0.15A 6SMT
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SMT6
Part Status: Not For New Designs
Description: TRANS 2NPN 50V 0.15A 6SMT
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SMT6
Part Status: Not For New Designs
на замовлення 1190 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.93 грн |
| 13+ | 24.16 грн |
| 100+ | 14.47 грн |
| 500+ | 12.58 грн |
| 1000+ | 8.55 грн |
| MMSTA13T146 |
|
Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 0.3A SOT-346 SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS NPN 30V 0.3A SOT-346 SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 2785 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.89 грн |
| 14+ | 21.52 грн |
| 100+ | 12.89 грн |
| 500+ | 11.2 грн |
| 1000+ | 7.61 грн |
| PTZTE2510A |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER 10V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDS
Part Status: Not For New Designs
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
Description: DIODE ZENER 10V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDS
Part Status: Not For New Designs
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
товар відсутній
| PTZTE2512A |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER 12V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Description: DIODE ZENER 12V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
на замовлення 489 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.5 грн |
| 10+ | 33.17 грн |
| 100+ | 21.41 грн |
| PTZTE2513A |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER 13V 1W PMDS
Description: DIODE ZENER 13V 1W PMDS
на замовлення 372 шт:
термін постачання 21-31 дні (днів)| PTZTE2515A |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER 15V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
Description: DIODE ZENER 15V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
товар відсутній
| PTZTE2516A |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER 16V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
Description: DIODE ZENER 16V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
товар відсутній
| PTZTE2518A |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER 18V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Description: DIODE ZENER 18V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.49 грн |
| 10+ | 30.16 грн |
| 100+ | 20.97 грн |
| 500+ | 15.37 грн |
| PTZTE2520A |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER 20V 1W PMDS
Description: DIODE ZENER 20V 1W PMDS
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.49 грн |
| 10+ | 30.31 грн |
| 100+ | 22.66 грн |
| 500+ | 16.71 грн |
| PTZTE2522A |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER 22V 1W PMDS
Description: DIODE ZENER 22V 1W PMDS
на замовлення 1446 шт:
термін постачання 21-31 дні (днів)| PTZTE2524A |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER 24V 1W PMDS
Description: DIODE ZENER 24V 1W PMDS
на замовлення 1469 шт:
термін постачання 21-31 дні (днів)| PTZTE2527A |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER 27V 1W PMDS
Description: DIODE ZENER 27V 1W PMDS
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)| PTZTE2536A |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER 36V 1W PMDS
Description: DIODE ZENER 36V 1W PMDS
на замовлення 1275 шт:
термін постачання 21-31 дні (днів)| PTZTE2539A |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER 39V 1W PMDS
Description: DIODE ZENER 39V 1W PMDS
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| PTZTE253.6B |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER 3.8V 1W PMDS
Description: DIODE ZENER 3.8V 1W PMDS
на замовлення 6187 шт:
термін постачання 21-31 дні (днів)| PTZTE254.7B |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER 4.9V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 4.9 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Description: DIODE ZENER 4.9V 1W PMDS
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 4.9 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
товар відсутній
| PTZTE255.1A |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.1V 1W PMDS
Description: DIODE ZENER 5.1V 1W PMDS
на замовлення 1399 шт:
термін постачання 21-31 дні (днів)| PTZTE255.6A |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.6V 1W PMDS
Description: DIODE ZENER 5.6V 1W PMDS
на замовлення 3290 шт:
термін постачання 21-31 дні (днів)| PTZTE256.2A |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.2V 1W PMDS
Description: DIODE ZENER 6.2V 1W PMDS
на замовлення 34 шт:
термін постачання 21-31 дні (днів)| PTZTE256.8A |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.8V 1W PMDS
Description: DIODE ZENER 6.8V 1W PMDS
на замовлення 388 шт:
термін постачання 21-31 дні (днів)| PTZTE257.5A |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER 7.5V 1W PMDS
Description: DIODE ZENER 7.5V 1W PMDS
на замовлення 741 шт:
термін постачання 21-31 дні (днів)| PTZTE258.2A |
|
Виробник: Rohm Semiconductor
Description: DIODE ZENER 8.2V 1W PMDS
Description: DIODE ZENER 8.2V 1W PMDS
на замовлення 2960 шт:
термін постачання 21-31 дні (днів)| QSH29TR |
|
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 1.25W TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 100mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 200mA, 5V
Resistor - Base (R1): 10kOhms
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Description: TRANS 2NPN PREBIAS 1.25W TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 100mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 200mA, 5V
Resistor - Base (R1): 10kOhms
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 60.82 грн |
| 10+ | 50.59 грн |
| 100+ | 35.01 грн |
| 500+ | 27.45 грн |
| 1000+ | 23.36 грн |
| QSZ2TR |
|
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 30V 1.5A 5TSMT
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: NPN, PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 370mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 300MHz, 280MHz
Supplier Device Package: TSMT5
Description: TRANS NPN/PNP 30V 1.5A 5TSMT
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: NPN, PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A / 370mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 300MHz, 280MHz
Supplier Device Package: TSMT5
на замовлення 2473 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.06 грн |
| 10+ | 33.82 грн |
| 100+ | 25.26 грн |
| 500+ | 18.63 грн |
| 1000+ | 14.39 грн |
| QSZ4TR |
|
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 30V 2A 5TSMT
Description: TRANS NPN/PNP 30V 2A 5TSMT
на замовлення 1670 шт:
термін постачання 21-31 дні (днів)| RB160L-90TE25 |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 90V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Description: DIODE SCHOTTKY 90V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
товар відсутній
| RB411VA-50TR |
|
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 500MA TUMD2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Description: DIODE SCHOTTKY 20V 500MA TUMD2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
товар відсутній
| RB450FT106 |
|
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA UMD3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Description: DIODE SCHOTTKY 40V 100MA UMD3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
на замовлення 3689 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.73 грн |
| 11+ | 26.72 грн |
| 100+ | 16.03 грн |
| 500+ | 13.94 грн |
| 1000+ | 9.48 грн |
| RB496EATR |
|
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 20V 1A TSMD5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1A
Supplier Device Package: TSMD5
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 10 V
Description: DIODE ARRAY SCHOTT 20V 1A TSMD5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1A
Supplier Device Package: TSMD5
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 10 V
на замовлення 8155 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.58 грн |
| 10+ | 34.85 грн |
| 100+ | 24.25 грн |
| 500+ | 17.77 грн |
| 1000+ | 14.44 грн |
| RB520SM-40T2R |
|
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Description: DIODE SCHOTTKY 40V 200MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
на замовлення 45927 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 25.85 грн |
| 18+ | 17.13 грн |
| 100+ | 8.65 грн |
| 500+ | 6.62 грн |
| 1000+ | 4.91 грн |
| 2000+ | 4.13 грн |
| RB551V-30TE-17 |
|
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 500MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Description: DIODE SCHOTTKY 20V 500MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
на замовлення 1363 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.93 грн |
| 14+ | 21.96 грн |
| 100+ | 11.08 грн |
| 500+ | 9.22 грн |
| 1000+ | 7.18 грн |
| RF051VA2STR |
|
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 500MA TUMD2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 500MA TUMD2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: TUMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| RF073M2STR |
|
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 700MA PMDU
Description: DIODE GEN PURP 200V 700MA PMDU
на замовлення 7083 шт:
термін постачання 21-31 дні (днів)| RF103L2STE25 |
|
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 1A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
| RN739DT146 |
|
Виробник: Rohm Semiconductor
Description: DIODE PIN HF SW 50V 50MA SOT-346
Description: DIODE PIN HF SW 50V 50MA SOT-346
на замовлення 2969 шт:
термін постачання 21-31 дні (днів)| RPM841-H11E2A |
Виробник: Rohm Semiconductor
Description: MODULE IRDA 115.2KBPS 7-SMD
Packaging: Cut Tape (CT)
Orientation: Side View
Operating Temperature: -30°C ~ 85°C
Size: 6.8mm x 2.4mm x 1.5mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.2
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2.4 V ~ 3.6 V
Idle Current, Typ @ 25°C: 90 µA
Description: MODULE IRDA 115.2KBPS 7-SMD
Packaging: Cut Tape (CT)
Orientation: Side View
Operating Temperature: -30°C ~ 85°C
Size: 6.8mm x 2.4mm x 1.5mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.2
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2.4 V ~ 3.6 V
Idle Current, Typ @ 25°C: 90 µA
товар відсутній
| RQ1E050RPTR |
|
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Description: MOSFET P-CH 30V 5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
на замовлення 1731 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.06 грн |
| 10+ | 51.76 грн |
| 100+ | 40.33 грн |
| 500+ | 31.27 грн |
| 1000+ | 24.68 грн |
| RRR015P03TL |
|
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 1.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Description: MOSFET P-CH 30V 1.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.21 грн |
| 11+ | 27.97 грн |
| 100+ | 19.46 грн |
| 500+ | 14.26 грн |
| 1000+ | 11.59 грн |