Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (100339) > Сторінка 101 з 1673
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MNR34J5ABJ390 | Rohm Semiconductor | Description: RES ARRAY 4 RES 39 OHM 2012 |
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MNR34J5ABJ391 | Rohm Semiconductor | Description: RES ARRAY 4 RES 390 OHM 2012 |
на замовлення 4515 шт: термін постачання 21-31 дні (днів) |
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MNR34J5ABJ392 | Rohm Semiconductor | Description: RES ARRAY 4 RES 3.9K OHM 2012 |
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MNR34J5ABJ393 | Rohm Semiconductor | Description: RES ARRAY 4 RES 39K OHM 2012 |
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MNR34J5ABJ430 | Rohm Semiconductor | Description: RES ARRAY 4 RES 43 OHM 2012 |
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MNR34J5ABJ470 | Rohm Semiconductor | Description: RES ARRAY 4 RES 47 OHM 2012 |
на замовлення 8040 шт: термін постачання 21-31 дні (днів) |
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MNR34J5ABJ471 | Rohm Semiconductor | Description: RES ARRAY 4 RES 470 OHM 2012 |
на замовлення 9982 шт: термін постачання 21-31 дні (днів) |
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MNR34J5ABJ473 | Rohm Semiconductor | Description: RES ARRAY 4 RES 47K OHM 2012 |
на замовлення 25493 шт: термін постачання 21-31 дні (днів) |
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MNR34J5ABJ510 | Rohm Semiconductor | Description: RES ARRAY 4 RES 51 OHM 2012 |
на замовлення 14961 шт: термін постачання 21-31 дні (днів) |
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MNR34J5ABJ511 | Rohm Semiconductor | Description: RES ARRAY 4 RES 510 OHM 2012 |
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MNR34J5ABJ512 | Rohm Semiconductor |
Description: RES ARRAY 4 RES 5.1K OHM 2012 Packaging: Cut Tape (CT) Resistance (Ohms): 5.1k Tolerance: ±5% Power Per Element: 125mW Circuit Type: Isolated Number of Pins: 8 Package / Case: 2012, Convex, Long Side Terminals Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.205" L x 0.122" W (5.20mm x 3.10mm) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Height - Seated (Max): 0.026" (0.65mm) Grade: Automotive Number of Resistors: 4 Qualification: AEC-Q200 |
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MNR34J5ABJ560 | Rohm Semiconductor |
Description: RES ARRAY 4 RES 56 OHM 2012 Packaging: Cut Tape (CT) Resistance (Ohms): 56 Tolerance: ±5% Power Per Element: 125mW Circuit Type: Isolated Number of Pins: 8 Package / Case: 2012, Convex, Long Side Terminals Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.205" L x 0.122" W (5.20mm x 3.10mm) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Height - Seated (Max): 0.026" (0.65mm) Part Status: Discontinued at Digi-Key Number of Resistors: 4 Grade: Automotive Qualification: AEC-Q200 |
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MNR34J5ABJ561 | Rohm Semiconductor | Description: RES ARRAY 4 RES 560 OHM 2012 |
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MNR34J5ABJ562 | Rohm Semiconductor | Description: RES ARRAY 4 RES 5.6K OHM 2012 |
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MNR34J5ABJ563 | Rohm Semiconductor | Description: RES ARRAY 4 RES 56K OHM 2012 |
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MNR34J5ABJ621 | Rohm Semiconductor | Description: RES ARRAY 4 RES 620 OHM 2012 |
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MNR34J5ABJ622 | Rohm Semiconductor | Description: RES ARRAY 4 RES 6.2K OHM 2012 |
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MNR34J5ABJ680 | Rohm Semiconductor | Description: RES ARRAY 4 RES 68 OHM 2012 |
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MNR34J5ABJ681 | Rohm Semiconductor | Description: RES ARRAY 4 RES 680 OHM 2012 |
на замовлення 4925 шт: термін постачання 21-31 дні (днів) |
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MNR34J5ABJ682 | Rohm Semiconductor | Description: RES ARRAY 4 RES 6.8K OHM 2012 |
на замовлення 7602 шт: термін постачання 21-31 дні (днів) |
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MNR34J5ABJ683 | Rohm Semiconductor | Description: RES ARRAY 4 RES 68K OHM 2012 |
на замовлення 8816 шт: термін постачання 21-31 дні (днів) |
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MNR34J5ABJ751 | Rohm Semiconductor | Description: RES ARRAY 4 RES 750 OHM 2012 |
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MNR35J5RJ101 | Rohm Semiconductor | Description: RES ARRAY 8 RES 100 OHM 2512 |
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MNR35J5RJ102 | Rohm Semiconductor |
Description: RES ARRAY 8 RES 1K OHM 2512 Packaging: Cut Tape (CT) Resistance (Ohms): 1k Tolerance: ±5% Power Per Element: 62.5mW Circuit Type: Bussed Number of Pins: 10 Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Height - Seated (Max): 0.026" (0.65mm) Number of Resistors: 8 Grade: Automotive Qualification: AEC-Q200 |
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MNR35J5RJ103 | Rohm Semiconductor | Description: RES ARRAY 8 RES 10K OHM 2512 |
на замовлення 2948 шт: термін постачання 21-31 дні (днів) |
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MNR35J5RJ104 | Rohm Semiconductor |
Description: RES ARRAY 8 RES 100K OHM 2512 Resistance (Ohms): 100k Tolerance: ±5% Packaging: Cut Tape (CT) Power Per Element: 62.5mW Circuit Type: Bussed Number of Pins: 10 Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Height - Seated (Max): 0.026" (0.65mm) Grade: Automotive Number of Resistors: 8 Qualification: AEC-Q200 |
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MNR35J5RJ221 | Rohm Semiconductor | Description: RES ARRAY 8 RES 220 OHM 2512 |
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MNR35J5RJ222 | Rohm Semiconductor | Description: RES ARRAY 8 RES 2.2K OHM 2512 |
на замовлення 9354 шт: термін постачання 21-31 дні (днів) |
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MNR35J5RJ223 | Rohm Semiconductor | Description: RES ARRAY 8 RES 22K OHM 2512 |
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MNR35J5RJ331 | Rohm Semiconductor | Description: RES ARRAY 8 RES 330 OHM 2512 |
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MNR35J5RJ332 | Rohm Semiconductor |
Description: RES ARRAY 8 RES 3.3K OHM 2512 Resistance (Ohms): 3.3k Tolerance: ±5% Packaging: Cut Tape (CT) Power Per Element: 62.5mW Circuit Type: Bussed Number of Pins: 10 Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Height - Seated (Max): 0.026" (0.65mm) Grade: Automotive Number of Resistors: 8 Qualification: AEC-Q200 |
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MNR35J5RJ431 | Rohm Semiconductor | Description: RES ARRAY 8 RES 430 OHM 2512 |
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MNR35J5RJ471 | Rohm Semiconductor |
Description: RES ARRAY 8 RES 470 OHM 2512 Resistance (Ohms): 470 Tolerance: ±5% Packaging: Cut Tape (CT) Power Per Element: 62.5mW Circuit Type: Bussed Number of Pins: 10 Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Height - Seated (Max): 0.026" (0.65mm) Grade: Automotive Number of Resistors: 8 Qualification: AEC-Q200 |
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MNR35J5RJ472 | Rohm Semiconductor |
Description: RES ARRAY 8 RES 4.7K OHM 2512 Resistance (Ohms): 4.7k Tolerance: ±5% Packaging: Cut Tape (CT) Power Per Element: 62.5mW Circuit Type: Bussed Number of Pins: 10 Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Height - Seated (Max): 0.026" (0.65mm) Grade: Automotive Number of Resistors: 8 Qualification: AEC-Q200 |
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MNR35J5RJ473 | Rohm Semiconductor |
Description: RES ARRAY 8 RES 47K OHM 2512 Resistance (Ohms): 47k Tolerance: ±5% Packaging: Cut Tape (CT) Power Per Element: 62.5mW Circuit Type: Bussed Number of Pins: 10 Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Height - Seated (Max): 0.026" (0.65mm) Grade: Automotive Part Status: Discontinued at Digi-Key Number of Resistors: 8 Qualification: AEC-Q200 |
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MNR35J5RJ511 | Rohm Semiconductor | Description: RES ARRAY 8 RES 510 OHM 2512 |
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1N4148T-72 | Rohm Semiconductor |
Description: DIODE GEN PURP 75V 150MA GSD Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: GSD Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
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1N4148T-77 | Rohm Semiconductor |
Description: DIODE GEN PURP 75V 150MA GSD Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: GSD Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
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1SR139-400T-32 | Rohm Semiconductor |
Description: DIODE GEN PURP 400V 1A MSR Packaging: Tape & Box (TB) Package / Case: DO-41 Mini, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: MSR Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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1SR139-600T-32 | Rohm Semiconductor | Description: DIODE GEN PURP 600V 1A MSR |
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1SR153-400T-32 | Rohm Semiconductor |
Description: DIODE GEN PURP 400V 1A MSR Packaging: Tape & Box (TB) Package / Case: DO-41 Mini, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: MSR Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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1SS244T-77 | Rohm Semiconductor | Description: DIODE GEN PURP 220V 200MA MSD |
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1SS356TW11 | Rohm Semiconductor |
Description: RF DIODE STANDARD 35V 200MW UMD2 Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Diode Type: Standard - Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz Resistance @ If, F: 900mOhm @ 2mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: UMD2 Part Status: Not For New Designs Current - Max: 100 mA Power Dissipation (Max): 200 mW |
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1SS390TE61 | Rohm Semiconductor |
Description: RF DIODE STANDARD 35V 150MW EMD2 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Diode Type: Standard - Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz Resistance @ If, F: 900mOhm @ 2mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: EMD2 Current - Max: 100 mA Power Dissipation (Max): 150 mW |
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2N3904T93 | Rohm Semiconductor |
Description: TRANS NPN 40V 0.2A TO92 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
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2N3906T93 | Rohm Semiconductor |
Description: TRANS PNP 40V 0.2A TO92 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
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2N4401T93 | Rohm Semiconductor |
Description: TRANS NPN 40V 0.6A TO92 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
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2N4403T93 | Rohm Semiconductor |
Description: TRANS PNP 40V 0.6A TO92 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 200MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
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2SA1036KT146P | Rohm Semiconductor |
Description: TRANS PNP 32V 0.5A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V Frequency - Transition: 200MHz Supplier Device Package: SMT3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 200 mW |
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2SA1036KT146Q | Rohm Semiconductor |
Description: TRANS PNP 32V 0.5A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 200MHz Supplier Device Package: SMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 200 mW |
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2SA1036KT146R | Rohm Semiconductor |
Description: TRANS PNP 32V 0.5A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 200MHz Supplier Device Package: SMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 200 mW |
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2SA1037AKT146S | Rohm Semiconductor |
Description: TRANS PNP 50V 0.15A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 140MHz Supplier Device Package: SMT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
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2SA1515STPQ | Rohm Semiconductor |
Description: TRANS PNP 32V 1A SPT Packaging: Tape & Reel (TR) Package / Case: SC-72 Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 150MHz Supplier Device Package: SPT Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 300 mW |
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2SA1576AT106S | Rohm Semiconductor |
Description: TRANS PNP 50V 0.15A UMT3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 140MHz Supplier Device Package: UMT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
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2SA1577T106Q | Rohm Semiconductor |
Description: TRANS PNP 32V 0.5A UMT3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 200MHz Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 200 mW |
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2SA1577T106R | Rohm Semiconductor |
Description: TRANS PNP 32V 0.5A UMT3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 200MHz Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 200 mW |
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2SA1579T106R | Rohm Semiconductor |
Description: TRANS PNP 120V 0.05A UMT3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Frequency - Transition: 140MHz Supplier Device Package: UMT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 200 mW |
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2SA1579T106S | Rohm Semiconductor |
Description: TRANS PNP 120V 0.05A UMT3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Frequency - Transition: 140MHz Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 200 mW |
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2SA1585STPQ | Rohm Semiconductor |
Description: TRANS PNP 20V 2A SPT Packaging: Tape & Box (TB) Package / Case: SC-72 Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Frequency - Transition: 240MHz Supplier Device Package: SPT Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 400 mW |
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2SA1585STPR | Rohm Semiconductor |
Description: TRANS PNP 20V 2A SPT Packaging: Tape & Box (TB) Package / Case: SC-72 Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V Frequency - Transition: 240MHz Supplier Device Package: SPT Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 400 mW |
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MNR34J5ABJ391 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 4 RES 390 OHM 2012
Description: RES ARRAY 4 RES 390 OHM 2012
на замовлення 4515 шт:
термін постачання 21-31 дні (днів)MNR34J5ABJ392 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 4 RES 3.9K OHM 2012
Description: RES ARRAY 4 RES 3.9K OHM 2012
товар відсутній
MNR34J5ABJ470 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 4 RES 47 OHM 2012
Description: RES ARRAY 4 RES 47 OHM 2012
на замовлення 8040 шт:
термін постачання 21-31 дні (днів)MNR34J5ABJ471 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 4 RES 470 OHM 2012
Description: RES ARRAY 4 RES 470 OHM 2012
на замовлення 9982 шт:
термін постачання 21-31 дні (днів)MNR34J5ABJ473 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 4 RES 47K OHM 2012
Description: RES ARRAY 4 RES 47K OHM 2012
на замовлення 25493 шт:
термін постачання 21-31 дні (днів)MNR34J5ABJ510 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 4 RES 51 OHM 2012
Description: RES ARRAY 4 RES 51 OHM 2012
на замовлення 14961 шт:
термін постачання 21-31 дні (днів)MNR34J5ABJ512 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 4 RES 5.1K OHM 2012
Packaging: Cut Tape (CT)
Resistance (Ohms): 5.1k
Tolerance: ±5%
Power Per Element: 125mW
Circuit Type: Isolated
Number of Pins: 8
Package / Case: 2012, Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.205" L x 0.122" W (5.20mm x 3.10mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Height - Seated (Max): 0.026" (0.65mm)
Grade: Automotive
Number of Resistors: 4
Qualification: AEC-Q200
Description: RES ARRAY 4 RES 5.1K OHM 2012
Packaging: Cut Tape (CT)
Resistance (Ohms): 5.1k
Tolerance: ±5%
Power Per Element: 125mW
Circuit Type: Isolated
Number of Pins: 8
Package / Case: 2012, Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.205" L x 0.122" W (5.20mm x 3.10mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Height - Seated (Max): 0.026" (0.65mm)
Grade: Automotive
Number of Resistors: 4
Qualification: AEC-Q200
товар відсутній
MNR34J5ABJ560 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 4 RES 56 OHM 2012
Packaging: Cut Tape (CT)
Resistance (Ohms): 56
Tolerance: ±5%
Power Per Element: 125mW
Circuit Type: Isolated
Number of Pins: 8
Package / Case: 2012, Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.205" L x 0.122" W (5.20mm x 3.10mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Discontinued at Digi-Key
Number of Resistors: 4
Grade: Automotive
Qualification: AEC-Q200
Description: RES ARRAY 4 RES 56 OHM 2012
Packaging: Cut Tape (CT)
Resistance (Ohms): 56
Tolerance: ±5%
Power Per Element: 125mW
Circuit Type: Isolated
Number of Pins: 8
Package / Case: 2012, Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.205" L x 0.122" W (5.20mm x 3.10mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Discontinued at Digi-Key
Number of Resistors: 4
Grade: Automotive
Qualification: AEC-Q200
товар відсутній
MNR34J5ABJ562 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 4 RES 5.6K OHM 2012
Description: RES ARRAY 4 RES 5.6K OHM 2012
товар відсутній
MNR34J5ABJ622 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 4 RES 6.2K OHM 2012
Description: RES ARRAY 4 RES 6.2K OHM 2012
товар відсутній
MNR34J5ABJ681 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 4 RES 680 OHM 2012
Description: RES ARRAY 4 RES 680 OHM 2012
на замовлення 4925 шт:
термін постачання 21-31 дні (днів)MNR34J5ABJ682 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 4 RES 6.8K OHM 2012
Description: RES ARRAY 4 RES 6.8K OHM 2012
на замовлення 7602 шт:
термін постачання 21-31 дні (днів)MNR34J5ABJ683 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 4 RES 68K OHM 2012
Description: RES ARRAY 4 RES 68K OHM 2012
на замовлення 8816 шт:
термін постачання 21-31 дні (днів)MNR35J5RJ102 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 8 RES 1K OHM 2512
Packaging: Cut Tape (CT)
Resistance (Ohms): 1k
Tolerance: ±5%
Power Per Element: 62.5mW
Circuit Type: Bussed
Number of Pins: 10
Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Height - Seated (Max): 0.026" (0.65mm)
Number of Resistors: 8
Grade: Automotive
Qualification: AEC-Q200
Description: RES ARRAY 8 RES 1K OHM 2512
Packaging: Cut Tape (CT)
Resistance (Ohms): 1k
Tolerance: ±5%
Power Per Element: 62.5mW
Circuit Type: Bussed
Number of Pins: 10
Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Height - Seated (Max): 0.026" (0.65mm)
Number of Resistors: 8
Grade: Automotive
Qualification: AEC-Q200
товар відсутній
MNR35J5RJ103 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 8 RES 10K OHM 2512
Description: RES ARRAY 8 RES 10K OHM 2512
на замовлення 2948 шт:
термін постачання 21-31 дні (днів)MNR35J5RJ104 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 8 RES 100K OHM 2512
Resistance (Ohms): 100k
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power Per Element: 62.5mW
Circuit Type: Bussed
Number of Pins: 10
Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Height - Seated (Max): 0.026" (0.65mm)
Grade: Automotive
Number of Resistors: 8
Qualification: AEC-Q200
Description: RES ARRAY 8 RES 100K OHM 2512
Resistance (Ohms): 100k
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power Per Element: 62.5mW
Circuit Type: Bussed
Number of Pins: 10
Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Height - Seated (Max): 0.026" (0.65mm)
Grade: Automotive
Number of Resistors: 8
Qualification: AEC-Q200
товар відсутній
MNR35J5RJ222 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 8 RES 2.2K OHM 2512
Description: RES ARRAY 8 RES 2.2K OHM 2512
на замовлення 9354 шт:
термін постачання 21-31 дні (днів)MNR35J5RJ332 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 8 RES 3.3K OHM 2512
Resistance (Ohms): 3.3k
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power Per Element: 62.5mW
Circuit Type: Bussed
Number of Pins: 10
Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Height - Seated (Max): 0.026" (0.65mm)
Grade: Automotive
Number of Resistors: 8
Qualification: AEC-Q200
Description: RES ARRAY 8 RES 3.3K OHM 2512
Resistance (Ohms): 3.3k
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power Per Element: 62.5mW
Circuit Type: Bussed
Number of Pins: 10
Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Height - Seated (Max): 0.026" (0.65mm)
Grade: Automotive
Number of Resistors: 8
Qualification: AEC-Q200
товар відсутній
MNR35J5RJ471 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 8 RES 470 OHM 2512
Resistance (Ohms): 470
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power Per Element: 62.5mW
Circuit Type: Bussed
Number of Pins: 10
Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Height - Seated (Max): 0.026" (0.65mm)
Grade: Automotive
Number of Resistors: 8
Qualification: AEC-Q200
Description: RES ARRAY 8 RES 470 OHM 2512
Resistance (Ohms): 470
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power Per Element: 62.5mW
Circuit Type: Bussed
Number of Pins: 10
Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Height - Seated (Max): 0.026" (0.65mm)
Grade: Automotive
Number of Resistors: 8
Qualification: AEC-Q200
товар відсутній
MNR35J5RJ472 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 8 RES 4.7K OHM 2512
Resistance (Ohms): 4.7k
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power Per Element: 62.5mW
Circuit Type: Bussed
Number of Pins: 10
Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Height - Seated (Max): 0.026" (0.65mm)
Grade: Automotive
Number of Resistors: 8
Qualification: AEC-Q200
Description: RES ARRAY 8 RES 4.7K OHM 2512
Resistance (Ohms): 4.7k
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power Per Element: 62.5mW
Circuit Type: Bussed
Number of Pins: 10
Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Height - Seated (Max): 0.026" (0.65mm)
Grade: Automotive
Number of Resistors: 8
Qualification: AEC-Q200
товар відсутній
MNR35J5RJ473 |
Виробник: Rohm Semiconductor
Description: RES ARRAY 8 RES 47K OHM 2512
Resistance (Ohms): 47k
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power Per Element: 62.5mW
Circuit Type: Bussed
Number of Pins: 10
Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Height - Seated (Max): 0.026" (0.65mm)
Grade: Automotive
Part Status: Discontinued at Digi-Key
Number of Resistors: 8
Qualification: AEC-Q200
Description: RES ARRAY 8 RES 47K OHM 2512
Resistance (Ohms): 47k
Tolerance: ±5%
Packaging: Cut Tape (CT)
Power Per Element: 62.5mW
Circuit Type: Bussed
Number of Pins: 10
Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Height - Seated (Max): 0.026" (0.65mm)
Grade: Automotive
Part Status: Discontinued at Digi-Key
Number of Resistors: 8
Qualification: AEC-Q200
товар відсутній
1N4148T-72 |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 75V 150MA GSD
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: GSD
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 75V 150MA GSD
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: GSD
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
товар відсутній
1N4148T-77 |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 75V 150MA GSD
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: GSD
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 75V 150MA GSD
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: GSD
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
товар відсутній
1SR139-400T-32 |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 1A MSR
Packaging: Tape & Box (TB)
Package / Case: DO-41 Mini, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: MSR
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A MSR
Packaging: Tape & Box (TB)
Package / Case: DO-41 Mini, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: MSR
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
1SR153-400T-32 |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 1A MSR
Packaging: Tape & Box (TB)
Package / Case: DO-41 Mini, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: MSR
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A MSR
Packaging: Tape & Box (TB)
Package / Case: DO-41 Mini, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: MSR
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
1SS356TW11 |
Виробник: Rohm Semiconductor
Description: RF DIODE STANDARD 35V 200MW UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Diode Type: Standard - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: UMD2
Part Status: Not For New Designs
Current - Max: 100 mA
Power Dissipation (Max): 200 mW
Description: RF DIODE STANDARD 35V 200MW UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Diode Type: Standard - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: UMD2
Part Status: Not For New Designs
Current - Max: 100 mA
Power Dissipation (Max): 200 mW
товар відсутній
1SS390TE61 |
Виробник: Rohm Semiconductor
Description: RF DIODE STANDARD 35V 150MW EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: EMD2
Current - Max: 100 mA
Power Dissipation (Max): 150 mW
Description: RF DIODE STANDARD 35V 150MW EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: EMD2
Current - Max: 100 mA
Power Dissipation (Max): 150 mW
товар відсутній
2N3904T93 |
Виробник: Rohm Semiconductor
Description: TRANS NPN 40V 0.2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS NPN 40V 0.2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товар відсутній
2N3906T93 |
Виробник: Rohm Semiconductor
Description: TRANS PNP 40V 0.2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товар відсутній
2N4401T93 |
Виробник: Rohm Semiconductor
Description: TRANS NPN 40V 0.6A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS NPN 40V 0.6A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товар відсутній
2N4403T93 |
Виробник: Rohm Semiconductor
Description: TRANS PNP 40V 0.6A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.6A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товар відсутній
2SA1036KT146P |
Виробник: Rohm Semiconductor
Description: TRANS PNP 32V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: SMT3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
Description: TRANS PNP 32V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: SMT3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
товар відсутній
2SA1036KT146Q |
Виробник: Rohm Semiconductor
Description: TRANS PNP 32V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
Description: TRANS PNP 32V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
товар відсутній
2SA1036KT146R |
Виробник: Rohm Semiconductor
Description: TRANS PNP 32V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
Description: TRANS PNP 32V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
товар відсутній
2SA1037AKT146S |
Виробник: Rohm Semiconductor
Description: TRANS PNP 50V 0.15A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.15A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
товар відсутній
2SA1515STPQ |
Виробник: Rohm Semiconductor
Description: TRANS PNP 32V 1A SPT
Packaging: Tape & Reel (TR)
Package / Case: SC-72 Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 150MHz
Supplier Device Package: SPT
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 300 mW
Description: TRANS PNP 32V 1A SPT
Packaging: Tape & Reel (TR)
Package / Case: SC-72 Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 150MHz
Supplier Device Package: SPT
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 300 mW
товар відсутній
2SA1576AT106S |
Виробник: Rohm Semiconductor
Description: TRANS PNP 50V 0.15A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.15A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
товар відсутній
2SA1577T106Q |
Виробник: Rohm Semiconductor
Description: TRANS PNP 32V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
Description: TRANS PNP 32V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
товар відсутній
2SA1577T106R |
Виробник: Rohm Semiconductor
Description: TRANS PNP 32V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
Description: TRANS PNP 32V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 200MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 200 mW
товар відсутній
2SA1579T106R |
Виробник: Rohm Semiconductor
Description: TRANS PNP 120V 0.05A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
Description: TRANS PNP 120V 0.05A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
товар відсутній
2SA1579T106S |
Виробник: Rohm Semiconductor
Description: TRANS PNP 120V 0.05A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
Description: TRANS PNP 120V 0.05A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
товар відсутній
2SA1585STPQ |
Виробник: Rohm Semiconductor
Description: TRANS PNP 20V 2A SPT
Packaging: Tape & Box (TB)
Package / Case: SC-72 Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 240MHz
Supplier Device Package: SPT
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Description: TRANS PNP 20V 2A SPT
Packaging: Tape & Box (TB)
Package / Case: SC-72 Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 240MHz
Supplier Device Package: SPT
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
товар відсутній
2SA1585STPR |
Виробник: Rohm Semiconductor
Description: TRANS PNP 20V 2A SPT
Packaging: Tape & Box (TB)
Package / Case: SC-72 Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Frequency - Transition: 240MHz
Supplier Device Package: SPT
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Description: TRANS PNP 20V 2A SPT
Packaging: Tape & Box (TB)
Package / Case: SC-72 Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Frequency - Transition: 240MHz
Supplier Device Package: SPT
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
товар відсутній