ZXMN2F30FHQTA Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 4.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 10 V
Description: MOSFET N-CH 20V 4.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 10 V
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.69 грн |
| 12+ | 25.55 грн |
| 100+ | 17.4 грн |
| 500+ | 12.24 грн |
| 1000+ | 9.18 грн |
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Технічний опис ZXMN2F30FHQTA Diodes Incorporated
Description: MOSFET N-CH 20V 4.9A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 2.5A, 4.5V, Power Dissipation (Max): 1.4W, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 10 V.
Інші пропозиції ZXMN2F30FHQTA за ціною від 7.45 грн до 34.69 грн
| Фото | Назва | Виробник | Інформація |
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| ZXMN2F30FHQTA | Виробник : Diodes Incorporated |
 MOSFET MOSFET BVDSS: 8V-24V |
на замовлення 8145 шт: термін постачання 21-30 дні (днів) |
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ZXMN2F30FHQTA | Виробник : Diodes Inc |
Trans MOSFET N-CH 20V 4.9A Automotive 3-Pin SOT-23 T/R |
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ZXMN2F30FHQTA | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 0.96W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of transistor: N-MOSFET Power dissipation: 0.96W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: 20V Drain current: 4.1A On-state resistance: 65mΩ кількість в упаковці: 1 шт |
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ZXMN2F30FHQTA | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 20V 4.9A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 2.5A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 10 V |
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ZXMN2F30FHQTA | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 0.96W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of transistor: N-MOSFET Power dissipation: 0.96W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: 20V Drain current: 4.1A On-state resistance: 65mΩ |
товар відсутній |