YQ10RSM10SDTL1 ROHM Semiconductor
Виробник: ROHM Semiconductor
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stabl
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stabl
на замовлення 7979 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 111.62 грн |
10+ | 78.5 грн |
100+ | 48.34 грн |
500+ | 44.31 грн |
1000+ | 38.41 грн |
2000+ | 37.19 грн |
4000+ | 36.4 грн |
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Технічний опис YQ10RSM10SDTL1 ROHM Semiconductor
Description: TRENCH MOS STRUCTURE, 100V, 10A,, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-277A, Operating Temperature - Junction: 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A, Current - Reverse Leakage @ Vr: 80 µA @ 100 V.
Інші пропозиції YQ10RSM10SDTL1 за ціною від 37.91 грн до 133.06 грн
Фото | Назва | Виробник | Інформація |
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YQ10RSM10SDTL1 | Виробник : Rohm Semiconductor |
Description: TRENCH MOS STRUCTURE, 100V, 10A, Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A Current - Reverse Leakage @ Vr: 80 µA @ 100 V |
на замовлення 3945 шт: термін постачання 21-31 дні (днів) |
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YQ10RSM10SDTL1 | Виробник : Rohm Semiconductor |
Description: TRENCH MOS STRUCTURE, 100V, 10A, Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A Current - Reverse Leakage @ Vr: 80 µA @ 100 V |
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