Результат пошуку "yjd80g06a" : 2
Вид перегляду :
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
YJD80G06A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 56A; 42.5W Type of transistor: N-MOSFET Technology: SPLIT GATE TRENCH Polarisation: unipolar Drain-source voltage: 60V Drain current: 56A Pulsed drain current: 240A Power dissipation: 42.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced |
товару немає в наявності |
YJD80G06A |
Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 56A; 42.5W
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 56A
Pulsed drain current: 240A
Power dissipation: 42.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 56A; 42.5W
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 56A
Pulsed drain current: 240A
Power dissipation: 42.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
товару немає в наявності