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XPH3R206NC,L1XHQ

XPH3R206NC,L1XHQ Toshiba


XPH3R206NC_datasheet_en_20201021-1948105.pdf Виробник: Toshiba
MOSFETs
на замовлення 9854 шт:

термін постачання 21-30 дні (днів)
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3+144.9 грн
10+ 102.02 грн
100+ 62.67 грн
500+ 51.38 грн
1000+ 48.47 грн
Мінімальне замовлення: 3
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Технічний опис XPH3R206NC,L1XHQ Toshiba

Description: MOSFET N-CH 60V 70A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Ta), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V, Power Dissipation (Max): 960mW (Ta), 132W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Grade: Automotive, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V, Qualification: AEC-Q101.

Інші пропозиції XPH3R206NC,L1XHQ

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XPH3R206NC,L1XHQ XPH3R206NC,L1XHQ Виробник : Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 60V 70A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
XPH3R206NC,L1XHQ XPH3R206NC,L1XHQ Виробник : Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 60V 70A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності