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WNSC2D2012006Q WeEn Semiconductors
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Description: WNSC2D201200/SOD59A/STANDARD MAR
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 950pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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Технічний опис WNSC2D2012006Q WeEn Semiconductors
Description: WNSC2D201200/SOD59A/STANDARD MAR, Packaging: Bulk, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 950pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Інші пропозиції WNSC2D2012006Q
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
---|---|---|---|---|---|
WNSC2D2012006Q | Виробник : WeEn Semiconductors |
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