WMO07N100C2 WAYON
Виробник: WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2.2A; Idm: 12A; 65W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 65W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 260ns
кількість в упаковці: 1 шт
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Технічний опис WMO07N100C2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2.2A; Idm: 12A; 65W, Type of transistor: N-MOSFET, Technology: WMOS™ C2, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 2.2A, Pulsed drain current: 12A, Power dissipation: 65W, Case: TO252, Gate-source voltage: ±30V, On-state resistance: 2Ω, Mounting: SMD, Gate charge: 3.8nC, Kind of package: reel; tape, Kind of channel: enhanced, Reverse recovery time: 260ns, кількість в упаковці: 1 шт.
Інші пропозиції WMO07N100C2
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WMO07N100C2 | Виробник : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2.2A; Idm: 12A; 65W Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 65W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Gate charge: 3.8nC Kind of package: reel; tape Kind of channel: enhanced Reverse recovery time: 260ns |
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