WMN26N65C4 WAYON
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Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис WMN26N65C4 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A, Type of transistor: N-MOSFET, Technology: WMOS™ C4, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 10.5A, Pulsed drain current: 40A, Power dissipation: 135W, Case: TO262, Gate-source voltage: ±30V, On-state resistance: 0.19Ω, Mounting: THT, Gate charge: 22.1nC, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції WMN26N65C4
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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WMN26N65C4 | Виробник : WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO262 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 22.1nC Kind of package: tube Kind of channel: enhanced |
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