![WMN13N80M3 WMN13N80M3](https://ce8dc832c.cloudimg.io/v7/_cdn_/8A/7E/00/00/1/59304_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=4d8892c19926fb193700534beff4a6fcd970f821)
WMN13N80M3 WAYON
![WMx13N80M3.pdf](/images/adobe-acrobat.png)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 130W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис WMN13N80M3 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO262, Type of transistor: N-MOSFET, Technology: WMOS™ M3, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 13A, Power dissipation: 130W, Case: TO262, Gate-source voltage: ±30V, On-state resistance: 0.48Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції WMN13N80M3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
WMN13N80M3 | Виробник : WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO262 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Power dissipation: 130W Case: TO262 Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |