WMK6N90D1 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 100W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 86.2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 100W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: THT
Gate charge: 86.2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис WMK6N90D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 100W, Type of transistor: N-MOSFET, Technology: WMOS™ D1, Polarisation: unipolar, Drain-source voltage: 900V, Drain current: 6A, Pulsed drain current: 24A, Power dissipation: 100W, Case: TO220-3, Gate-source voltage: ±30V, On-state resistance: 1.7Ω, Mounting: THT, Gate charge: 86.2nC, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції WMK6N90D1
Фото | Назва | Виробник | Інформація |
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WMK6N90D1 | Виробник : WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 100W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Pulsed drain current: 24A Power dissipation: 100W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: THT Gate charge: 86.2nC Kind of package: tube Kind of channel: enhanced |
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