WMJ90R360S WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 7.8A; Idm: 52A; 183W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7.8A
Pulsed drain current: 52A
Power dissipation: 183W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 7.8A; Idm: 52A; 183W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7.8A
Pulsed drain current: 52A
Power dissipation: 183W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис WMJ90R360S WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 7.8A; Idm: 52A; 183W, Type of transistor: N-MOSFET, Technology: WMOS™ S, Polarisation: unipolar, Drain-source voltage: 900V, Drain current: 7.8A, Pulsed drain current: 52A, Power dissipation: 183W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 0.34Ω, Mounting: THT, Gate charge: 32nC, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції WMJ90R360S
Фото | Назва | Виробник | Інформація |
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WMJ90R360S | Виробник : WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 7.8A; Idm: 52A; 183W Type of transistor: N-MOSFET Technology: WMOS™ S Polarisation: unipolar Drain-source voltage: 900V Drain current: 7.8A Pulsed drain current: 52A Power dissipation: 183W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.34Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced |
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