WMJ80R160S WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 15A; Idm: 96A; 250W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Pulsed drain current: 96A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 15A; Idm: 96A; 250W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Pulsed drain current: 96A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис WMJ80R160S WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 15A; Idm: 96A; 250W, Type of transistor: N-MOSFET, Technology: WMOS™ S, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 15A, Pulsed drain current: 96A, Power dissipation: 250W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 0.18Ω, Mounting: THT, Gate charge: 46nC, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції WMJ80R160S
Фото | Назва | Виробник | Інформація |
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WMJ80R160S | Виробник : WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 15A; Idm: 96A; 250W Type of transistor: N-MOSFET Technology: WMOS™ S Polarisation: unipolar Drain-source voltage: 800V Drain current: 15A Pulsed drain current: 96A Power dissipation: 250W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhanced |
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