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VTVS47GSMF-M3-08 Vishay General Semiconductor - Diodes Division
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Description: TVS DIODE 46.8VWM 80VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 293pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 46.8V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 54.88V
Voltage - Clamping (Max) @ Ipp: 80V
Power - Peak Pulse: 400W
Power Line Protection: No
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Технічний опис VTVS47GSMF-M3-08 Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 46.8VWM 80VC DO219AB, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Capacitance @ Frequency: 293pF @ 1MHz, Current - Peak Pulse (10/1000µs): 4.9A, Voltage - Reverse Standoff (Typ): 46.8V, Supplier Device Package: DO-219AB (SMF), Unidirectional Channels: 1, Voltage - Breakdown (Min): 54.88V, Voltage - Clamping (Max) @ Ipp: 80V, Power - Peak Pulse: 400W, Power Line Protection: No.
Інші пропозиції VTVS47GSMF-M3-08
Фото | Назва | Виробник | Інформація |
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VTVS47GSMF-M3-08 | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Capacitance @ Frequency: 293pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.9A Voltage - Reverse Standoff (Typ): 46.8V Supplier Device Package: DO-219AB (SMF) Unidirectional Channels: 1 Voltage - Breakdown (Min): 54.88V Voltage - Clamping (Max) @ Ipp: 80V Power - Peak Pulse: 400W Power Line Protection: No |
товар відсутній |
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VTVS47GSMF-M3-08 | Виробник : Vishay Semiconductors |
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товар відсутній |
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VTVS47GSMF-M3-08 | Виробник : Vishay General Semiconductor |
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товар відсутній |