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VSS8D2M10HM3/I Vishay General Semiconductor - Diodes Division
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Description: DIODE SCHOTTKY 100V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Qualification: AEC-Q101
на замовлення 9354 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
10+ | 30.41 грн |
13+ | 22.77 грн |
100+ | 13.67 грн |
500+ | 11.88 грн |
1000+ | 8.08 грн |
2000+ | 7.44 грн |
5000+ | 7.01 грн |
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Технічний опис VSS8D2M10HM3/I Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A SLIMSMAW, Packaging: Tape & Reel (TR), Package / Case: DO-221AC, SMA Flat Leads, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 250pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: SlimSMAW (DO-221AD), Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A, Current - Reverse Leakage @ Vr: 150 µA @ 100 V, Qualification: AEC-Q101.
Інші пропозиції VSS8D2M10HM3/I
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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VSS8D2M10HM3/I | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 250pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SlimSMAW (DO-221AD) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 100 V Qualification: AEC-Q101 |
товар відсутній |
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VSS8D2M10HM3/I | Виробник : Vishay General Semiconductor |
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товар відсутній |