Технічний опис VS-HFA16TB120SHM3 Vishay
Description: DIODE GEN PURP 1.2KV 16A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 90 ns, Technology: Standard, Current - Average Rectified (Io): 16A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 3 V @ 16 A, Current - Reverse Leakage @ Vr: 20 µA @ 1200 V, Qualification: AEC-Q101.
Інші пропозиції VS-HFA16TB120SHM3
Фото | Назва | Виробник | Інформація |
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VS-HFA16TB120SHM3 | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 16A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Current - Average Rectified (Io): 16A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 16 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V Qualification: AEC-Q101 |
товар відсутній |
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VS-HFA16TB120SHM3 | Виробник : Vishay Semiconductors | Rectifiers Hexfreds - D2PAK-e3 |
товар відсутній |