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VS-HFA08TB120S-M3 Vishay General Semiconductor - Diodes Division
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Description: DIODE GEN PURP 1.2KV 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 4.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 5666 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5+ | 69.94 грн |
50+ | 54 грн |
100+ | 42.78 грн |
500+ | 34.03 грн |
1000+ | 33.66 грн |
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Технічний опис VS-HFA08TB120S-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 95 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 4.3 V @ 16 A, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V.
Інші пропозиції VS-HFA08TB120S-M3 за ціною від 80.05 грн до 80.05 грн
Фото | Назва | Виробник | Інформація |
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VS-HFA08TB120S-M3 | Виробник : Vishay Semiconductors |
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на замовлення 1080 шт: термін постачання 21-30 дні (днів) |
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VS-HFA08TB120S-M3 | Виробник : Vishay |
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товар відсутній |
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VS-HFA08TB120S-M3 | Виробник : VISHAY |
![]() Description: Diode: rectifying; SMD; 1.2kV; 8A; 160ns; D2PAK,TO263AB; Ufmax: 3.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Reverse recovery time: 160ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 20pF Case: D2PAK; TO263AB Max. forward voltage: 3.1V Max. load current: 32A Max. forward impulse current: 130A Leakage current: 1mA Kind of package: tube кількість в упаковці: 1 шт |
товар відсутній |
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VS-HFA08TB120S-M3 | Виробник : VISHAY |
![]() Description: Diode: rectifying; SMD; 1.2kV; 8A; 160ns; D2PAK,TO263AB; Ufmax: 3.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Reverse recovery time: 160ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 20pF Case: D2PAK; TO263AB Max. forward voltage: 3.1V Max. load current: 32A Max. forward impulse current: 130A Leakage current: 1mA Kind of package: tube |
товар відсутній |