Технічний опис VS-HFA04SD60SR-M3 Vishay
Description: DIODE GEN PURP 600V 4A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 42 ns, Technology: Standard, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-252AA (DPAK), Operating Temperature - Junction: -65°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A, Current - Reverse Leakage @ Vr: 3 µA @ 600 V, Qualification: AEC-Q101.
Інші пропозиції VS-HFA04SD60SR-M3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
VS-HFA04SD60SR-M3 | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 4A TO252 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V Qualification: AEC-Q101 |
товар відсутній |
||
VS-HFA04SD60SR-M3 | Виробник : Vishay Semiconductors | Diodes - General Purpose, Power, Switching Hexfreds - D-PAK-e3 |
товар відсутній |