Технічний опис VS-8EWH02FNTRL-M3 Vishay
Description: DIODE GEN PURP 200V 8A D-PAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 24 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-252AA (DPAK), Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 970 mV @ 8 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Інші пропозиції VS-8EWH02FNTRL-M3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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VS-8EWH02FNTRL-M3 | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 8A; DPAK Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DPAK кількість в упаковці: 1 шт |
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VS-8EWH02FNTRL-M3 | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 8A D-PAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 970 mV @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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VS-8EWH02FNTRL-M3 | Виробник : Vishay Semiconductors | Rectifiers Freds - D-PAK-e3 |
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VS-8EWH02FNTRL-M3 | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 8A; DPAK Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DPAK |
товар відсутній |