Технічний опис VS-8ETH06-1PBF Vishay
Description: DIODE GEN PURP 600V 8A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-262-3, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Інші пропозиції VS-8ETH06-1PBF
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
VS-8ETH06-1PBF | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 8A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-262-3 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товар відсутній |
||
VS-8ETH06-1PBF | Виробник : Vishay Semiconductors | Rectifiers 8.0 Amp 600 Volt 18ns |
товар відсутній |