VS-8DKH02HM3/H Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: DIODE ARRAY GP 200V 4A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 1480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 61.06 грн |
| 10+ | 53.07 грн |
| 100+ | 41.39 грн |
| 500+ | 32.09 грн |
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Технічний опис VS-8DKH02HM3/H Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 4A FLATPAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 4A, Supplier Device Package: FlatPAK 5x6 (Dual), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4 A, Current - Reverse Leakage @ Vr: 2 µA @ 200 V.
Інші пропозиції VS-8DKH02HM3/H
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VS-8DKH02HM3/H | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 4A FLATPAK Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: FlatPAK 5x6 (Dual) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
товар відсутній |