![VS-4ESH01HM3/86A VS-4ESH01HM3/86A](https://www.mouser.com/images/vishay/lrg/TO_277A_3_SPL.jpg)
VS-4ESH01HM3/86A Vishay Semiconductors
на замовлення 759 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
7+ | 48.26 грн |
10+ | 41.57 грн |
100+ | 25.03 грн |
500+ | 20.93 грн |
1000+ | 18.15 грн |
3000+ | 16.82 грн |
9000+ | 16.13 грн |
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Технічний опис VS-4ESH01HM3/86A Vishay Semiconductors
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 100V; 4A; 31ns; SMPC; Ufmax: 0.79V; Ifsm: 130A, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 100V, Load current: 4A, Reverse recovery time: 31ns, Semiconductor structure: single diode, Features of semiconductor devices: ultrafast switching, Capacitance: 24pF, Case: SMPC, Max. forward voltage: 0.79V, Max. forward impulse current: 130A, Leakage current: 10µA, Kind of package: reel; tape, кількість в упаковці: 1 шт.
Інші пропозиції VS-4ESH01HM3/86A за ціною від 23.83 грн до 49.63 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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VS-4ESH01HM3/86A | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
на замовлення 1315 шт: термін постачання 21-31 дні (днів) |
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VS-4ESH01HM3/86A | Виробник : VISHAY |
![]() Description: Diode: rectifying; SMD; 100V; 4A; 31ns; SMPC; Ufmax: 0.79V; Ifsm: 130A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 4A Reverse recovery time: 31ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 24pF Case: SMPC Max. forward voltage: 0.79V Max. forward impulse current: 130A Leakage current: 10µA Kind of package: reel; tape кількість в упаковці: 1 шт |
товар відсутній |
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VS-4ESH01HM3/86A | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
товар відсутній |
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VS-4ESH01HM3/86A | Виробник : VISHAY |
![]() Description: Diode: rectifying; SMD; 100V; 4A; 31ns; SMPC; Ufmax: 0.79V; Ifsm: 130A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 4A Reverse recovery time: 31ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 24pF Case: SMPC Max. forward voltage: 0.79V Max. forward impulse current: 130A Leakage current: 10µA Kind of package: reel; tape |
товар відсутній |