VS-30ETH06STRRPBF

VS-30ETH06STRRPBF Vishay Semiconductors


vs-30eth06p-87434.pdf Виробник: Vishay Semiconductors
Rectifiers 30A 600V 18ns Hyperfast
на замовлення 745 шт:

термін постачання 21-30 дні (днів)
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Технічний опис VS-30ETH06STRRPBF Vishay Semiconductors

Description: DIODE GEN PURP 600V 30A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 31 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 30, Voltage Coupled to Current - Reverse Leakage @ Vr: 600, Grade: Automotive, Qualification: AEC-Q101.

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VS-30ETH06STRRPBF VS-30ETH06STRRPBF Виробник : Vishay 1099217792507266vs-30eth06p.pdf Rectifier Diode Switching 600V 30A 35ns Automotive 3-Pin(2+Tab) D2PAK T/R
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VS-30ETH06STRRPBF VS-30ETH06STRRPBF Виробник : Vishay General Semiconductor - Diodes Division VS-30ETH06.pdf Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 30
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Grade: Automotive
Qualification: AEC-Q101
товар відсутній